FFSH40120ADN-F085 [ONSEMI]
SiC，双裸片，1200 V，40 A;
| 型号： | FFSH40120ADN-F085 |
| 厂家： | 
ONSEMI |
| 描述： | SiC，双裸片，1200 V，40 A 局域网 测试 二极管 |
| 文件： | 总7页 (文件大小：273K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
Schottky Diode – EliteSiC,
40 A, 1200 V, D1, TO-247-3L
1. Anode 2. Cathode/
Case
3. Anode
Schottky Diode
FFSH40120ADN-F085
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
TO−247−3LD
CASE 340CH
Features
• Max Junction Temperature 175°C
• Avalanche Rated 210 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
MARKING DIAGRAM
AYWWZZ
FFSH
40120ADN
• No Reverse Recovery/No Forward Recovery
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Automotive HEV−EV Onboard Chargers
• Automotive HEV−EV DC−DC Converters
A
= Assembly Location
Y
= Year
WW
ZZ
= Work Week
= Lot Traceability
FFSH40120ADN = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
February, 2023 − Rev. 3
FFSH40120ADN−F085/D
FFSH40120ADN−F085
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Value
1200
Unit
V
V
RRM
Peak Repetitive Reverse Voltage
E
Single Pulse Avalanche Energy (Note 1)
210
mJ
A
AS
I
Continuous Rectified Forward Current @ T < 148°C
20* / 40**
25* / 50**
1190
F
C
Continuous Rectified Forward Current @ T < 135°C
C
I
Non-Repetitive Peak Forward Surge Current
A
A
T
T
= 25°C, 10 ms
= 150°C, 10 ms
F, Max
C
990
C
I
Non-Repetitive Forward Surge Current
Repetitive Forward Surge Current
Power Dissipation
Half-Sine Pulse, t = 8.3 ms
135
A
F,SM
p
I
Half-Sine Pulse, t = 8.3 ms
74
A
F,RM
p
Ptot
T
= 25°C
220
W
C
C
T
= 150°C
37
W
T , T
Operating and Storage Temperature Range
TO247 Mounting Torque, M3 Screw
−55 to +175
60
°C
Ncm
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. E of 210 mJ is based on starting T = 25°C, L = 0.5 mH, I = 29 A, V = 50 V.
AS
J
AS
*Per leg, ** Per Device
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
R
Thermal Resistance, Junction to Case, Max
0.68* / 0.34**
°C/W
q
JC
*Per leg, ** Per Device
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Forward Voltage
Test Condition
Min
−
Typ
1.45
1.7
2.0
−
Max
1.75
2.0
2.4
200
300
400
−
Unit
V
F
I = 20 A, T = 25°C
V
F
C
I = 20 A, T = 125°C
−
F
C
I = 20 A, T = 175°C
−
F
C
I
R
Reverse Current
V
R
= 1200 V, T = 25°C
−
mA
C
V
R
V
R
= 1200 V, T = 125°C
−
−
C
= 1200 V, T = 175°C
−
−
C
Q
Total Capacitive Charge
Total Capacitance
V = 800 V
−
120
1220
111
88
nC
pF
C
C
V
R
V
R
V
R
= 1 V, f = 100 kHz
= 400 V, f = 100 kHz
= 800 V, f = 100 kHz
−
−
−
−
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Part Number
Top Marking
Package
Shipping
FFSH40120ADN−F085
FFSH40120ADN
TO−247−3LD
(Pb-Free / Halogen Free)
30 Units / Tube
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2
FFSH40120ADN−F085
TYPICAL CHARACTERISTICS
(T = 25°C UNLESS OTHERWISE NOTED; PER LEG)
J
40
30
20
10
TJ = −55 oC
TJ = 25 oC
1
TJ = 75 oC
o
T
= 175
= 125
C
J
10−1
10−2
10−3
TJ = 125 oC
TJ = 175 oC
o
T
J
C
o
T
J
= 75
C
J
10
0
o
= 25 C
T
o
= −55 C
T
J
200
400
600
800
1000 1200
0
1
2
3
4
VR, REVERSE VOLTAGE (V)
V , FORWARD VOLTAGE (V)
F
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
1.0
0.8
0.6
0.4
0.2
0.0
200
180
160
140
120
100
80
D = 0.1
TJ = −55oC
TJ = 25 oC
TJ = 75 oC
D = 0.2
D = 0.3
D = 0.5
D = 0.7
D = 1
60
TJ = 125 oC
40
TJ = 175 oC
20
0
25
50
75
100
125
150
175
1000
1100
1200
1300
1400
1500
TC, CASE TEMPERATUR(oEC)
V , REVERSE VOLTAGE (V)
R
Figure 3. Reverse Characteristics
Figure 4. Current Derating
150
125
100
75
250
200
150
100
50
50
25
0
0
25
0
200
400
600
800
1000
50
75
100
125
150
175
TC, CASE TEMPERATURE o(C)
VR, REVERSE VOLTAGE (V)
Figure 5. Power Derating
Figure 6. Capacitive Charge vs. Reverse
Voltage
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3
FFSH40120ADN−F085
TYPICAL CHARACTERISTICS
(T = 25°C UNLESS OTHERWISE NOTED; PER LEG; CONTINUED)
J
5000
1000
50
40
30
20
10
0
100
50
0.1
1
10
100
1000
0
200
400
600
800
1000
VR, REVERSE VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 7. Capacitance vs. Reverse Voltage
Figure 8. Capacitance Stored Energy
2
DUTY CYCLE−DESCENDING ORDER
1
D=0.5
D=0.2
P
DM
0.1
t
D=0.1
1
t
D=0.05
D=0.02
2
NOTES:
(t) = r(t) x R
Z
R
0.01
qJC
qJC
o
D=0.01
= 0.68 C/W
qJC
Peak T = P
x Z (t) + T
J
DM
qJC C
Duty Cycle, D = t / t
1
2
SINGLE PULSE
0.001
10−6
10−5
10−4
t, RECTANGULAR PULSE DURATION (sec)
10−3
10−2
10−1
1
Figure 9. Junction-to-Case Transient Thermal Response Curve
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4
FFSH40120ADN−F085
TEST CIRCUIT AND WAVEFORMS
L = 0.5 mH
R < 0.1 W
V
DD
= 50 V
EAVL = 1/2LI2 [V
/ (V − V )]
R(AVL) DD
R(AVL)
Q1 = IGBT (BV
> DUT V
)
CES
R(AVL)
V
AVL
L
R
+
V
CURRENT
SENSE
DD
I
L
I
L
Q1
I V
DUT
V
DD
−
t
0
t
1
t
2
t
Figure 10. Unclamped Inductive Switching Test Circuit & Waveform
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CH
ISSUE A
DATE 09 OCT 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13853G
TO−247−3LD
PAGE 1 OF 1
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相关型号：
FFSH40120ADN-F155
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 40 A, 1200 V, D1, TO-247-3L
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