FFSH4065ADN-F155 [ONSEMI]
SiC 二极管，650V，40A，TO-247-3，共阴极;
| 型号： | FFSH4065ADN-F155 |
| 厂家： | 
ONSEMI |
| 描述： | SiC 二极管，650V，40A，TO-247-3，共阴极 二极管 |
| 文件： | 总7页 (文件大小：319K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
Schottky Diode – EliteSiC,
40 A, 650 V, D1, TO-247-3L
1
2
FFSH4065ADN-F155
Description
3
TO−247−3LD
CASE 340CH
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size & cost.
V
I
F
RRM
650 V
40 A
Features
• Max Junction Temperature 175°C
• Avalanche Rated 95 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
MARKING DIAGRAM
• No Reverse Recovery / No Forward Recovery
• This Device is Pb−Free and is RoHS Compliant
AYWWKK
FFSH
Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits
4065ADN
A
YWW
KK
= Assembly Plant Code
= Date Code (Year & Week)
= Lot Traceability Code
= Specific Device Code
FFSH4065ADN
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
FFSH4065ADN−F155/D
February, 2023 − Rev. 2
FFSH4065ADN−F155
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise specified)
C
Symbol
Parameter
FFSH4065ADN−F155
Unit
V
V
RRM
Peak Repetitive Reverse Voltage
650
95
E
AS
Single Pulse Avalanche Energy (Note 1)
Continuous Rectified Forward Current
Continuous Rectified Forward Current
Non−Repetitive Peak Forward Surge Current
mJ
A
I
F
@TC < 140°C
20* / 40**
22* / 44**
1100
@ TC < 135°C
I
TC = 25°C, 10 μs
TC = 150°C, 10 μs
A
A
F, Max
1000
105
I
Non−Repetitive Forward Surge Current
Repetitive Forward Surge Current
Power Dissipation
A
F, SM
I
58
A
F, RM
P
tot
TC = 25°C
150
W
TC = 150°C
25
W
T , T
Operating and Storage Temperature Range
TO247 Mounting Torque, M3 Screw
−55 to +175
60
°C
Ncm
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
*Per leg.
**Per Device.
1. E of 95 mJ is based on starting T = 25°C, L = 0.5 mH, I = 19.5 A, V = 50 V.
AS
J
AS
THERMAL CHARACTERISTICS
Symbol
Parameter
Rating
Unit
R
Thermal Resistance, Junction to Case, Max.
1.0* / 0.5**
_C/W
q
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Forward Voltage
Test Conditions
IF = 20 A, TC = 25°C
Min
−
Typ
1.5
1.6
1.72
−
Max
Unit
V
F
1.75
2.0
2.4
200
400
600
−
V
IF = 20 A, TC = 125°C
IF = 20 A, TC = 175°C
VR = 650 V, TC = 25°C
VR = 650 V, TC = 125°C
VR = 650 V, TC = 175°C
V = 400 V
−
−
I
R
Reverse Current
−
mA
−
−
−
−
Q
Total Capacitance Charge
Total Capacitance
−
64
nC
pF
C
C
VR = 1 V, f = 100 kHz
VR = 200 V, f = 100 kHz
VR = 400 V, f = 100 kHz
−
1085
117
88
−
−
−
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Width
Quantity
FFSH4065ADN−F155
FFSH4065ADN
TO-247-3LD
Tube
N/A
N/A
30 Units
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2
FFSH4065ADN−F155
TYPICAL CHARACTERISTICS
(T = 25°C UNLESS OTHERWISE NOTED)
J
10−5
10−6
40
30
20
10
0
T
J = 125 o
J = 75 o
TJ = 25 o
C
T
C
T
J = 25 o
C
C
TJ = 175 o
C
10−7
10−8
10−9
TJ = 175 oC
T
J = 125 oC
TJ = 75 o
C
T
J = −55oC
1.5 2.0
V , Forward Voltage (V)
TJ = −55oC
600 650
0.0
0.5
1.0
2.5
3.0
200
300
400
500
F
V , Reverse Voltage (V)
R
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
200
160
160
120
D = 0.1
D = 0.2
120
80
80
40
D = 0.3
D = 0.5
40
0
D = 0.7
D = 1
0
25
25
50
75
100
125
150
175
50
75
100
125
150
175
T , Case Temperature (5C)
T , Case Temperature (5C)
C
C
Figure 3. Current Derating
Figure 4. Power Derating
10000
1000
100
100
80
60
40
20
0
0
10
0.1
1
10
100
650
100
200
300
400
500
600 650
V , Reverse Voltage (V)
R
V , Reverse Voltage (V)
R
Figure 5. Capacitive Charge vs. Reverse Voltage
Figure 6. Capacitance vs. Reverse Voltage
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3
FFSH4065ADN−F155
TYPICAL CHARACTERISTICS (CONTINUED)
(T = 25°C UNLESS OTHERWISE NOTED)
J
25
20
15
10
5
0
0
100
200
300
400
500
600 650
V , Reverse Voltage (V)
R
Figure 7. Capacitance Stored Energy
2
1
DUTY CYCLE−DESCENDING ORDER
P
DM
0.1
0.5
t
1
0.2
t
2
0.1
Notes:
(t) = r(t) × R
0.01
0.05
Z
q
q
JC
JC
0.02
0.01
R
q
= 1.0°C/W
JC
Peak T = P
× Z (t) + T
q
JC C
J
DM
SINGLE PULSE
Duty Cycle, D = t / t
1
2
0.001
−6
−5
−4
−3
−2
−1
10
10
10
10
10
10
1
t, Rectangular Pulse Duration (sec)
Figure 8. Junction−to−Case Transient Thermal Response Curve
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4
FFSH4065ADN−F155
TEST CIRCUIT AND WAVEFORMS
L = 0.5 mH
R < 0.1 W
V
= 50 V
DD
EAVL = 1/2LI2 [V
/(V
− V )]
R(AVL)
R(AVL)
R(AVL) DD
Q1 = IGBT (BV
> DUT V
)
CES
V
AVL
L
R
+
V
CURRENT
SENSE
DD
I
L
I
L
Q1
I V
V
DD
DUT
−
t0
t1
t2
t
Figure 9. Unclamped Inductive Switching Test Circuit & Waveform
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CH
ISSUE A
DATE 09 OCT 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13853G
TO−247−3LD
PAGE 1 OF 1
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