FFSM1065A [ONSEMI]
SiC 二极管，650V，10A，PQFN88;
| 型号： | FFSM1065A |
| 厂家： | 
ONSEMI |
| 描述： | SiC 二极管，650V，10A，PQFN88 局域网 功效 光电二极管 |
| 文件： | 总6页 (文件大小：377K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Silicon Carbide (SiC)
Schottky Diode – EliteSiC,
10 A, 650 V, D1, Power88
Pin1
5
4
3
2
1
PQFN 8y 8, 2P
(Power88)
CASE 483AP
FFSM1065A
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
5. Cathode 3, 4. Anode
1, 2. Floating
Schottky Diode
MARKING DIAGRAM
Features
AYWWKK
FFSM
1065A
• Max Junction Temperature 175°C
• Avalanche Rated 47 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
A
YWW
KK
= Assembly Plant Code
= Date Code (Year & Week)
= Lot Traceability Code
= Specific Device Code
• No Reverse Recovery/No Forward Recovery
FFSM1065A
• This Device is Pb−Free, Halogen Free/BFR Free and RoHS
Compliant
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
February, 2023 − Rev. 4
FFSM1065A/D
FFSM1065A
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Value
Unit
V
V
RRM
Peak Repetitive Reverse Voltage
Single Pulse Avalanche Energy
650
E
AS
(Note 1)
47
mJ
A
I
F
Continuous Rectified Forward Current @ T < 140°C
10
C
Continuous Rectified Forward Current @ T < 135°C
11
C
I
Non-Repetitive Peak Forward Surge Current
600
A
A
T
C
T
C
= 25°C, 10 ms
= 150°C, 10 ms
F, Max
580
I
Non-Repetitive Forward Surge Current
Repetitive Forward Surge Current
Power Dissipation
Half-Sine Pulse, t = 8.3 ms
56
A
F,SM
p
I
Half-Sine Pulse, t = 8.3 ms
28
71
A
F,RM
p
Ptot
T
= 25°C
W
W
°C
C
C
T
= 150°C
12
T , T
J
Operating and Storage Temperature Range
−55 to +175
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. E of 47 mJ is based on starting T = 25°C, L = 1 mH, I = 9.7 A, V = 50 V.
AS
J
AS
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
R
Thermal Resistance, Junction to Case, Max
2.1
°C/W
q
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Forward Voltage
Test Condition
I = 10 A, T = 25°C
Min
−
Typ
1.50
1.6
1.72
−
Max
1.75
2.0
2.4
200
400
600
−
Unit
V
F
V
F
C
I = 10 A, T = 125°C
−
F
C
I = 10 A, T = 175°C
−
F
C
I
R
Reverse Current
V
R
V
R
V
R
= 650 V, T = 25°C
−
mA
C
= 650 V, T = 125°C
−
−
C
= 650 V, T = 175°C
−
−
C
Q
Total Capacitive Charge
Total Capacitance
V = 400 V
−
34
nC
pF
C
C
V
R
V
R
V
R
= 1 V, f = 100 kHz
= 200 V, f = 100 kHz
= 400 V, f = 100 kHz
−
575
62
−
−
−
−
47
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PACKAGE MARKING AND ORDERING INFORMATION
†
Part Number
Top Marking
Package
Shipping
FFSM1065A
FFSM1065A
PQFN 8x8, 2P
(Power88)
(Halogen Free)
3000 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
FFSM1065A
TYPICAL CHARACTERISTICS
(T = 25°C UNLESS OTHERWISE NOTED)
J
10−5
10−6
10−7
10
8
6
o
= 175 C
T
J
4
o
C
T
J
= 125
o
= 75 C
TJ = 175 o
TJ = 125 o
C
10−8
T
TJ = 25 o
TJ = −55oC
C
J
2
C
TJ = 75 o
C
o
= 25 C
T
J
o
= −55 C
T
J
10−9
0
0.0
0.5
1.0
1.5
2.0
200
300
400
500
600 650
VR, REVERSE VOLTAGE (V)
V , FORWARD VOLTAGE (V)
F
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
100
80
60
40
20
0
80
60
40
20
0
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.7
D = 1
25
50
75
100
125
150
175
25
50
75
100
125
150
175
o
C, CASE TEMPERATURE (oC)
TC, CASE TEMPERATURE (C)
T
Figure 3. Current Derating
Figure 4. Power Derating
50
40
30
20
10
0
1000
100
10
0.1
1
10
100
650
0
100 200 300
400 500 600 650
VR, REVERSE VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 5. Capacitive Charge vs. Reverse Voltage
Figure 6. Capacitance vs. Reverse Voltage
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3
FFSM1065A
TYPICAL CHARACTERISTICS
(T = 25°C UNLESS OTHERWISE NOTED)
J
12
10
8
6
4
2
0
0
100 200 300
400 500 600 650
VR, REVERSE VOLTAGE (V)
Figure 7. Capacitance Stored Energy
2
1
DUTY CYCLE−DESCENDING ORDER
0.1
PDM
D=0.5
t1
0.01
0.2
t2
0.1
0.01
NOTES:
0.05
0.02
Z
(t) = r(t) x R
o
qJC
qJC
R
= 2.1 C/W
qJC
0.001
Peak T = P
x Z (t) + T
J
DM
qJC C
Duty Cycle, D = t / t
SINGLE PULSE
10−5
1
2
0.0005
10−6
10−4
10−3
10−2
10−1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 8. Junction-to-Case Transient Thermal Response Curve
TEST CIRCUIT AND WAVEFORMS
L = 1 mH
R < 0.1 W
V
DD
= 50 V
EAVL = 1/2LI2 [V
/ (V − V )]
R(AVL) DD
R(AVL)
Q1 = IGBT (BV
> DUT V
)
CES
R(AVL)
V
AVL
L
R
+
V
CURRENT
SENSE
DD
I
L
I
L
Q1
I V
V
DD
DUT
−
t
0
t
1
t
2
t
Figure 9. Unclamped Inductive Switching Test Circuit & Waveform
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN4 8X8, 2P
CASE 483AP
ISSUE A
DATE 06 JUL 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13664G
PQFN4 8X8, 2P
PAGE 1 OF 1
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