FFSP0665A
更新时间：2024-10-30 05:39:02
品牌：ONSEMI
描述：Silicon Carbide (SiC) Schottky Diode – EliteSiC, 6 A, 650 V, D1, TO-220-2L
概述
数据手册FFSP0665A 概述
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 6 A, 650 V, D1, TO-220-2L
FFSP0665A 数据手册
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Silicon Carbide (SiC)
Schottky Diode – EliteSiC,
6 A, 650 V, D1, TO-220-2L
1. Cathode
2. Anode
FFSP0665A
Schottky Diode
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
1
2
TO−220−2LD
CASE 340BB
Features
• Max Junction Temperature 175°C
• Avalanche Rated 36 mJ
MARKING DIAGRAM
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery/No Forward Recovery
• This Device is Pb−Free, Halogen Free/BFR Free and RoHS
AXYYKK
FFSP
0665A
Compliant
Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits
A
XYY
KK
= Assembly Plant Code
= Date Code (Year & Week)
= Lot Traceability Code
FFSP0665A = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
February, 2023 − Rev. 3
FFSP0665A/D
FFSP0665A
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Symbol
V
Parameter
Value
Unit
V
Peak Repetitive Reverse Voltage
Single Pulse Avalanche Energy (Note 1)
Continuous Rectified Forward Current @ T < 153°C
650
RRM
E
AS
36
mJ
A
I
F
6
C
Continuous Rectified Forward Current @ T < 135°C
8.8
A
C
I
Non-Repetitive Peak Forward Surge Current
430
A
T
C
T
C
= 25°C, 10 ms
= 150°C, 10 ms
F,Max
415
A
I
Non-Repetitive Forward Surge Current
Repetitive Forward Surge Current
Power Dissipation
Half−Sine Pulse, t = 8.3 ms
42
A
F,SM
p
I
Half−Sine Pulse, t = 8.3 ms
28
A
F,RM
p
P
T
= 25°C
65
11
W
W
°C
TOT
C
C
T
= 150°C
T , T
J
Operating and Storage Temperature Range
−55 to +175
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. E of 36 mJ is based on starting T = 25°C, L = 0.5 mH, I = 12 A, V = 50 V.
AS
J
AS
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
R
Thermal Resistance, Junction to Case, Max
2.3
°C/W
q
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Forward Voltage
Test Condition
I = 6 A, T = 25°C
Min
−
Typ
1.50
1.6
1.72
−
Max
1.75
2.0
2.4
200
400
600
−
Unit
V
F
V
F
C
I = 6 A, T = 125°C
−
F
C
I = 6 A, T = 175°C
−
F
C
I
R
Reverse Current
V
R
V
R
V
R
= 650 V, T = 25°C
−
mA
C
= 650 V, T = 125°C
−
−
C
= 650 V, T = 175°C
−
−
C
Q
Total Capacitive Charge
Total Capacitance
V = 400 V
−
22
nC
pF
C
C
V
R
V
R
V
R
= 1 V, f = 100 kHz
= 200 V, f = 100 kHz
= 400 V, f = 100 kHz
−
361
41
−
−
−
−
32
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Quantity
FFSP0665A
FFSP0665A
TO−220−2LD
Tube
50 Units
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2
FFSP0665A
TYPICAL CHARACTERISTICS
(T = 25°C UNLESS OTHERWISE NOTED)
J
−6
6
5
4
3
2
1
0
10
−7
10
T = 175°C
J
−8
10
T = 175°C
J
T = 75°C
J
J
T = 25°C
T = −55°C
J
T = 125°C
J
J
T = 125°C
T = 75°C
J
T = 25°C
J
T = −55°C
J
−9
10
0.0
0.5
1.0
1.5
2.0
200
300
400
500
600 650
V , Forward Voltage (V)
F
V , Reverse Voltage (V)
R
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
100
80
80
D = 0.1
D = 0.2
60
40
20
0
60
D = 0.3
D = 0.5
40
20
0
D = 0.7
D = 1
25
50
75
100
125
150
175
25
50
75
100
125
150
175
T , Case Temperature (5C)
Figure 3. Current Derating
T , Case Temperature (5C)
C
C
Figure 4. Power Derating
1000
100
10
30
25
20
15
10
5
0
0
100 200 300 400
500 600 650
0.1
1
10
100
650
V , Reverse Voltage (V)
R
V , Reverse Voltage (V)
R
Figure 5. Capacitive Charge vs. Reverse
Voltage
Figure 6. Capacitance vs. Reverse Voltage
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3
FFSP0665A
TYPICAL CHARACTERISTICS (CONTINUED)
(T = 25°C UNLESS OTHERWISE NOTED)
J
8
6
4
2
0
0
100 200 300 400 500 600 650
V , Reverse Voltage (V)
R
Figure 7. Capacitance Stored Energy
2
1
DUTY CIRCLE−DESCENDING ORDER
D=0.5
0.2
PDM
0.1
t1
0.1
t2
0.05
0.01
NOTES:
0.02
0.01
Z
(t) = r(t) × R
= 2.3°C/W
q
JC
q
JC
R
q
JC
Peak T = P
Duty Cycle, D = t / t
× Z (t) + T
q
JC
J
DM
C
SINGLE PULSE
1
2
0.001
−6
−5
−4
−3
−2
−1
10
10
10
10
10
10
1
t, Rectangular Pulse Duration (s)
Figure 8. Junction−to−Case Transient Thermal Response Curve
TEST CIRCUIT AND WAVEFORMS
L = 0.5 mH
R < 0.1 W
V
DD
= 50 V
EAVL = 1/2LI2 [V
/ (V − V )]
R(AVL) DD
R(AVL)
Q1 = IGBT (BV
> DUT V
)
CES
R(AVL)
V
AVL
L
R
+
V
CURRENT
SENSE
DD
I
L
I
L
Q1
I V
DUT
V
DD
−
t
0
t
1
t
2
t
Figure 9. Unclamped Inductive Switching Test Circuit & Waveform
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220−2LD
CASE 340BB
ISSUE O
DATE 31 AUG 2016
4.09
3.50
M
M
B A
0.36
10.67
9.65
B
A
8.89
6.86
3.43
2.54
1.40
0.51
6.86
5.84
7°
3°
13.40
12.19
16.51
14.22
16.15
15.75
9.40
8.38
5°
3°
5°
3°
6.35 MAX
1
2
0.60 MAX
C
14.73
13.60
1.65
1.25
1.91
0.61
0.33
2.54
5.08
2.92
2.03
1.02
0.38
M
0.36
C
A
B
NOTES:
5°
3°
5°
3°
A. PACKAGE REFERENCE: JEDEC TO220,ISSUE K,
VARIATION AC,DATED APRIL 2002.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSION AND TOLERANCE AS PER ASME
Y14.5−2009.
4.80
4.30
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13832G
TO−220−2LD
PAGE 1 OF 1
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