FGA50N100BNTDTU [ONSEMI]
IGBT，1000V，NPT 沟槽;
| 型号： | FGA50N100BNTDTU |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，1000V，NPT 沟槽 局域网 汽车点火 栅 双极性晶体管 |
| 文件： | 总9页 (文件大小：348K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
November 2013
FGA50N100BNTD
1000 V NPT Trench IGBT
General Description
Features
Using Fairchild's proprietary trench design and advanced
NPT technology, the 1000V NPT IGBT offers superior
conduction and switching performances, high avalanche
ruggedness and easy parallel operation. This device offers
the optimum performance for hard switching application
such as UPS, welder applications.
•
•
•
•
High Speed Switching
Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60 A
High Input Impedance
Built-in Fast Recovery Diode
Application
UPS, Welder, Induction Heating, Microwave Oven
C
G
TO-3P
G
C
E
E
Absolute Maximum Ratings
T = 25C unless otherwise noted
C
Symbol
VCES
VGES
Description
Collector-Emitter Voltage
Ratings
Unit
V
1000
Gate-Emitter Voltage
25
V
Collector Current
@ TC
@ TC = 100C
=
25C
50
A
IC
ICM (1)
IF
Collector Current
35
100
A
Pulsed Collector Current
A
Diode Continuous Forward Current
Diode Continuous Forward Current
M a x i m u m P o w e r D i s s i p a t i o n
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ TC = 25C
@ TC = 100C
@ T C
30
A
15
A
PD
=
25C
156
W
W
C
C
@ TC = 100C
63
TJ
Tstg
-55 to +150
-55 to +150
TL
300
C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(DIODE)
RJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Typ.
Max.
0.8
Unit
C/W
C/W
C/W
--
--
--
2.4
Thermal Resistance, Junction-to-Ambient
25
©2006 Fairchild Semiconductor Corporation
FGA50N100BNTD Rev. C1
1
www.fairchildsemi.com
Package Marking and Ordering Information
Packing
Part Number
Top Mark
Package Method Reel Size Tape Width Quantity
FGA50N100BNTDTU FGA50N100BNTD
TO-3P
Rail / Tube
N/A
N/A
30
Electrical Characteristics of IGBT
T
= 25C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
VGE = 0 V, IC = 1 mA
BVCES
Collector Emitter Breakdown Voltage
1000
--
--
--
--
--
V
VCE = 1000 V, VGE = 0 V
VGE = ± 25 V, VCE = 0 V
ICES
Collector Cut-Off Current
1.0
mA
nA
IGES
G-E Leakage Current
--
± 500
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 60 mA, VCE = VGE
4.0
--
5.0
1.5
2.5
7.0
1.8
2.9
V
V
V
I
I
C = 10 A, VGE = 15 V
C = 60 A, VGE = 15 V
Collector to Emitter
Saturation Voltage
VCE(sat)
--
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
--
--
--
6000
260
--
--
--
pF
pF
pF
VCE=10 V VGE = 0 V,
f = 1 MHz
,
Output Capacitance
Reverse Transfer Capacitance
200
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qge
Qgc
Turn-On Delay Time
--
--
--
--
--
--
--
140
320
630
130
275
45
--
--
ns
ns
V
R
CC = 600 V, IC = 60 A,
G = 51 , VGE=15 V,
Rise Time
Turn-Off Delay Time
Fall Time
--
ns
Resistive Load, TC = 25C
250
350
--
ns
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
nC
nC
nC
VCE = 600 V, IC = 60 A,
V
GE = 15 V , , TC = 25C
95
--
Electrical Characteristics of DIODE
T
= 25C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
--
Typ.
1.2
Max.
1.7
2.1
1.5
2
Unit
V
IF = 15 A
IF = 60 A
IF = 60 A diF/dt = 20 A/us
VRRM = 1000 V
VFM
Diode Forward Voltage
--
1.8
V
trr
IR
Diode Reverse Recovery Time
Instantaneous Reverse Current
1.2
us
uA
--
0.05
©2006 Fairchild Semiconductor Corporation
FGA50N100BNTD Rev. C2
2
www.fairchildsemi.com
100
80
60
40
20
0
90
80
70
60
50
40
30
20
10
0
20V
15V
10V
9V
Common Emitter
C = 25oC
Common Emitter
GE = 15V
Tc = 25oC
Tc = 125oC
8V
T
V
7V
VGE = 6V
0
1
2
3
4
5
0
1
2
3
4
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
10
Common Emitter
Common Emitter
VGE=15V
TC= - 40 O
C
8
6
4
2
0
3
2
80A
60A
30A
30A
60A
80A
IC=10A
IC=10A
1
-50
0
50
100
150
4
8
12
16
20
Case Temperature, TC [oC]
Gate-Emitter Voltage, VGE [V]
Fig 3. Saturation Voltage vs. Case
Fig 4. Saturation Voltage vs. V
GE
Temperature at Varient Current Level
10
8
10
8
Common Emitter
TC = 125oC
Common Emitter
T
C = 25oC
30A
6
6
60A
30A
60A
80A
80A
4
4
2
2
IC = 10A
IC = 10A
0
0
4
8
12
16
20
4
8
12
16
20
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. V
Fig 6. Saturation Voltage vs. V
GE
GE
©2006 Fairchild Semiconductor Corporation
3
www.fairchildsemi.com
FGA50N100BNTD Rev. C1
10000
1000
100
10000
1000
100
Cies
VCC=600V, IC=60A
VGE= +/-15V
TC=25 oC
Tdoff
Tr
Tdon
Tf
Coes
Cres
Common Emitter
VGE = 0V, f = 1MHz
TC = 25 o
C
10
0
5
10
15
20
25
30
0
50
100
150
200
Collector-Emitter Voltage, VCE [V]
Gate Resistance, RG []
Fig 7. Capacitance Characteristics
Fig 8. Switching Characteristics vs.
Gate Resistance
20
Common Emitter
1000
VCC=600V, RL=10
VCC=600V, Rg=51
VGE=+/-15V, TC=25 oC
TC=25 o
C
15
10
5
Tdoff
Tf
Tr
100
Tdon
0
0
50
100
150
200
250
300
10
20
30
40
50
60
Gate Charge, Qg [nC]
Collector Current, IC [A]
Fig 9. Switching Characteristics vs.
Collector Current
Fig 10. Gate Charge Characteristics
1
0.5
Ic MAX (Pulsed)
100
Ic MAX (Continuous)
0.2
50s
100s
0.1
0.1
10
1
1ms
0.05
0.02
DC Operation
single pulse
0.01
0.01
Single Nonrepetitive
0.1
0.01
Pulse Tc = 25oC
Curves must be derated
linearly with increase
in temperature
1E-3
1E-5
1E-4
1E-3
0.01
0.1
1
10
0.1
1
10
100
1000
Rectangular Pulse Duration [sec]
Collector - Emitter Voltage, VCE [V]
Fig 11. SOA Characteristics
Fig 12. Transient Thermal Impedance of IGBT
©2006 Fairchild Semiconductor Corporation
FGA50N100BNTD Rev. C1
4
www.fairchildsemi.com
1.2
1.0
0.8
0.6
0.4
0.2
0.0
120
100
80
60
40
20
0
IF= 60 A
TC= 25 o
100
10
1
C
TC = 100 oC
trr
TC = 25oC
Irr
0.1
0.0
0.5
1.0
1.5
2.0
2.5
0
40
80
120
di/dt [A/us]
160
200
240
Forward Voltage, VF [V]
Fig 13. Forward Characteristics
Fig 14. Reverse Recovery Characteristics
vs. di /dt
F
di/dt=-20A/us
TC=25 oC
1.2
1.0
0.8
0.6
0.4
12
10
8
1000
100
10
TC = 150 oC
trr
Irr
1
6
0.1
TC= 25 oC
0.01
1E-3
4
10
20
30
40
50
60
0
300
600
900
Forward Current, IF [A]
Reverse Voltage, VR [V]
Fig 15. Reverse Recovery Characteristics vs.
Forward Current
Fig 16. Reverse Current vs. Reverse Voltage
250
TC = 25 oC
200
150
100
50
0
0.1
1
10
100
Reverse Voltage, VR [V]
Fig 17. Junction capacitance
©2006 Fairchild Semiconductor Corporation
FGA50N100BNTD Rev. C1
5
www.fairchildsemi.com
Mechanical Dimensions
Figure 18. TO-3P 3L - 3LD, T03, PLASTIC, EIAJ SC-65
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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©2006 Fairchild Semiconductor Corporation
FGA50N100BNTD Rev. C1
6
www.fairchildsemi.com
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Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
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Datasheet contains preliminary data; supplementary data will be published at a later
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Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
©2006 Fairchild Semiconductor Corporation
FGA50N100BNTD Rev. C1
7
www.fairchildsemi.com
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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