FGA50S110P [ONSEMI]
IGBT，1100V，50A，短路阳极;
| 型号： | FGA50S110P |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，1100V，50A，短路阳极 局域网 栅 双极性晶体管 功率控制 |
| 文件： | 总9页 (文件大小：810K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
2016 年 3 月
FGA50S110P
1100 V、 50 A 阳极短路 IGBT
特性
概述
•
•
•
•
•
•
内置反并联二极管，用于软开关应用
大开关频率范围：10 kHz 至 50 kHz
高温稳定性能 （Tjmax = 175°C）
低饱和压降：VCE(sat) = 2.06 V，IC = 50 A
耐用锅炉检测噪声抗扰度
飞兆半导体的短路阳极沟道 IGBT 系列采用先进的场截止沟道和
短路阳极技术，为开关应用提供出色的导通和开关性能。该器件
为电磁炉和微波炉量身定制。
符合 RoHS 标准 （无铅引脚电镀）
应用
•
电磁炉、电饭煲和微波炉
•
软开关应用
C
G
TO-3PN
E
G C E
绝对最大额定值
符号
说明
额定值
1100
25
50
单位
V
VCES
VGES
集电极 - 发射极之间电压
V
栅极 - 发射极间电压
集电极电流
@ TC = 25°C
@ TC = 100°C
A
IC
30
A
集电极电流
ICM (1)
IF
120
50
A
集电极脉冲电流
二极管正向连续电流
二极管正向连续电流
最大功耗
@ TC = 25°C
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
A
30
A
300
150
W
W
°C
°C
PD
最大功耗
TJ
工作结温
-55 至 +175
-55 至 +175
300
Tstg
TL
存储温度范围
用于焊接的最大引脚温度，距离外壳 1/8"，持续 5 秒
°C
热性能
符号
RJC(IGBT)
RJA
参数
结至外壳热阻最大值
典型值
最大值
单位
°C/W
°C/W
-
-
0.5
40
结至环境热阻最大值
注意：
1: 受限于 Tjmax
1
www.fairchildsemi.com
©2013 飞兆半导体公司
FGA50S110P 修订版 1.3
封装标识与定购信息
器件标识
器件
封装
卷尺寸
带宽
数量
FGA50S110P
FGA50S110P
TO-3PN
-
-
30
IGBT 的电气特性
T
= 25°C 除非另有说明
C
符号
参数
测试条件
最小值 典型值 最大值 单位
关断特性
ICES
IGES
VCE = 1100 V， VGE = 0 V
VGE = VGES， VCE = 0 V
-
-
-
-
1
mA
nA
集电极切断电流
±500
G-E 漏电流
导通特性
VGE(th)
IC = 50 mA，VCE = VGE
4.5
-
5.6
7.5
2.6
V
V
G-E 阈值电压
IC = 50 A， VGE = 15 V
TC = 25°C
2.06
IC = 50 A ， VGE = 15 V
TC = 125°C
VCE(sat)
-
-
2.54
2.7
-
-
集电极 - 发射极间饱和电压
V
V
IC = 50 A， VGE = 15 V，
TC = 175°C
IF = 50 A， TC = 25°C
IF = 50 A， TC = 175°C
-
-
1.96
2.67
2.6
-
V
V
VFM
二极管正向电压
动态特性
Cies
-
-
-
2056
47.8
35.8
-
-
-
pF
pF
pF
输入电容
VCE = 30 V， VGE = 0 V，
f = 1 MHz
Coes
输出电容
Cres
反向传输电容
开关特性
td(on)
tr
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
24
294
280
95
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
μJ
μJ
μJ
ns
ns
ns
ns
μJ
μJ
μJ
nC
nC
nC
导通延迟时间
上升时间
td(off)
tf
关断延迟时间
下降时间
VCC = 600 V， IC = 50 A，
RG = 10 ， VGE = 15 V，
阻性负载， TC = 25°C
Eon
Eoff
Ets
2240
990
3230
24
导通开关损耗
关断开关损耗
总开关损耗
td(on)
tr
td(off)
tf
导通延迟时间
上升时间
346
308
184
2640
1820
4460
195
15.4
99.9
关断延迟时间
下降时间
VCC = 600 V， IC = 50 A，
RG = 10 ， VGE = 15 V，
阻性负载， TC = 175°C
Eon
Eoff
Ets
导通开关损耗
关断开关损耗
总开关损耗
Qg
总栅极电荷
VCE = 600 V， IC = 50 A，
VGE = 15 V
Qge
Qgc
栅极－发射极间电荷
栅极－发射极间电荷
2
www.fairchildsemi.com
©2013 飞兆半导体公司
FGA50S110P 修订版 1.3
典型性能特征
图 1. 典型输出特性
图 2. 典型输出特性
120
120
TC = 25oC
17V
15V
TC = 175oC
20V
17V
15V
12V
100
20V
100
80
60
40
20
0
12V
10V
9V
80
60
40
20
0
10V
9V
8V
8V
VGE = 7V
8.0
VGE = 7V
0.0
2.0
4.0
6.0
10.0
0.0
2.0
4.0
6.0
8.0
10.0
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
图 3. 典型饱和电压特性
图 4. 传输特性
120
120
Common Emitter
Common Emitter
VGE = 15V
TC = 25oC
TC = 175oC
VCE = 20V
TC = 25oC
TC = 175oC
100
80
60
40
20
0
100
80
60
40
20
0
0
3
6
9
12
15
0.0
1.0
2.0
3.0
4.0
5.0
Gate-Emitter Voltage,VGE [V]
Collector-Emitter Voltage, VCE [V]
图 5. 饱和电压与壳温的关系 （在可变电流强度下）
图 6. 饱和电压与 V 的关系
GE
4.5
20
Common Emitter
Common Emitter
TC = 25oC
VGE = 15 V
4.0
15
3.5
3.0
2.5
2.0
1.5
1.0
100 A
50A
10
100A
IC = 25A
50 A
5
0
IC = 25 A
25
50
75
100
125
150
175
4
8
12
16
20
Case Temperature, TC [oC]
Gate-Emitter Voltage, VGE [V]
©2013 飞兆半导体公司
3
www.fairchildsemi.com
FGA50S110P 修订版 1.3
典型性能特征
图 7. 饱和电压与 V 的关系
图 8. 电容特性
GE
5000
20
Common Emitter
TC = 175oC
Cies
1000
100
15
50A
10
IC = 25A
100A
Coes
Cres
5
0
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
10
1
5
10
15
20
25
30
4
8
12
16
20
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage, VGE [V]
图 9. 栅极电荷特性
图 10. SOA 特性
15
150
100
Common Emitter
TC = 25oC
10s
12
VCC = 200V
600V
400V
10
100s
9
6
3
0
10ms
1ms
DC
1
*Notes:
1. TC = 25oC
2. TJ = 175oC
3. Single Pulse
0.1
0
30
60
90
120 150 180 210
1
10
100
1000
Gate Charge, Qg [nC]
Collector-Emitter Voltage, VCE [V]
图 11. 导通特性与栅极电阻的关系
图 12. 关断特性与栅极电阻的关系
1000
5000
td(on)
td(off)
1000
100
tf
tr
100
Common Emitter
Common Emitter
VCC = 600V, VGE = 15V
VCC = 600V, VGE = 15V
IC = 50A
IC = 50A
TC = 25oC
TC = 175oC
TC = 25oC
TC = 175oC
10
5
10
7
10
20
30
40
50
60
10
20
30
40
50
60
Gate Resistance, RG []
Gate Resistance, RG []
4
www.fairchildsemi.com
©2013 飞兆半导体公司
FGA50S110P 修订版 1.3
典型性能特征
图 13. 导通特性与集电极电流的关系
图 14. 关断特性与集电极电流的关系
1000
1000
td(off)
tr
100
tf
100
td(on)
10
Common Emitter
Common Emitter
VGE = 15V, RG = 10
VGE = 15V, RG = 10
TC = 25oC
TC = 25oC
TC = 175oC
TC = 175oC
1
10
10
10
20
30
40
50
20
30
40
50
Collector Current, IC [A]
Collector Current, IC [A]
图 15. 开关损耗与栅极电阻的关系
图 16. 开关损耗与集电极电流的关系
5000
10000
Eon
Eon
1000
Eoff
1000
Common Emitter
Common Emitter
VCC = 600V, VGE = 15V
Eoff
VGE = 15V, RG = 10
TC = 25oC
TC = 175oC
IC = 50A
TC = 25oC
TC = 175oC
100
10
100
10
20
30
40
50
20
30
40
50
60
Collector Current, IC [A]
Gate Resistance, RG []
图 17. 关断开关 SOA 特性
图 18. 正向特性
200
100
100
10
1
10
Safe Operating Area
VGE = 15V, TC = 175oC
TC = 25oC
TC = 175oC
1
0.1
0
1
10
100
1000
1
2
3
4
Collector-Emitter Voltage, VCE [V]
Forward Voltage, VF [V]
©2013 飞兆半导体公司
5
www.fairchildsemi.com
FGA50S110P 修订版 1.3
典型性能特征
图 19. IGBT 瞬态热阻
0.6
0.5
0.2
0.1
PDM
0.1
0.05
0.02
0.01
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
single pulse
1E-4
0.05
1E-5
1E-3
0.01
0.1
1
10
100
Rectangular Pulse Duration [sec]
6
www.fairchildsemi.com
©2013 飞兆半导体公司
FGA50S110P 修订版 1.3
5.00
4.60
13.80
13.40
1.65
1.45
3.30
3.10
16.20
15.40
5.20
4.80
R0.50
3°
16.96
16.56
20.10
19.70
18.90
18.50
7.20
6.80
3°
4°
1
3
2.00
1.60
3.70
3.30
1.85
2.60
2.20
20.30
19.70
2.20
1.80
3.20
2.80
1.20
0.80
M
0.55
0.75
0.55
5.45
5.45
NOTES: UNLESS OTHERW ISE SPECIFIED
A) THIS PACKAGE CONFORMS TO EIAJ
SC-65 PACKAGING STANDARD.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSION AND TOLERANCING PER
ASME14.5-2009.
D) DIMENSIONS ARE EXCLUSSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSSIONS.
E) DRAW ING FILE NAME: TO3PN03AREV2.
F) FAIRCHILD SEMICONDUCTOR.
R0.50
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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