FGAF40N60UFDTU [ONSEMI]
600V,PT IGBT;型号: | FGAF40N60UFDTU |
厂家: | ONSEMI |
描述: | 600V,PT IGBT 局域网 双极性晶体管 功率控制 |
文件: | 总10页 (文件大小:701K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
IGBT
FGAF40N60UFD
Ultrafast IGBT
General Description
Features
Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
•
•
•
•
High speed switching
Low saturation voltage : V
High input impedance
= 2.3 V @ I = 20A
CE(sat)
C
CO-PAK, IGBT with FRD : t = 50ns (typ.)
rr
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
E
G
TO-3PF
G
C
E
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
Description
Collector-Emitter Voltage
FGAF40N60UFD
Units
V
V
V
600
± 20
CES
GES
Gate-Emitter Voltage
V
Collector Current
@ T
=
25°C
40
A
C
I
C
Collector Current
@ T = 100°C
20
A
C
I
I
I
Pulsed Collector Current
160
A
CM (1)
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ T = 100°C
15
A
F
C
160
A
FM
P
@ T
=
25°C
100
W
W
°C
°C
D
C
@ T = 100°C
40
C
T
-55 to +150
-55 to +150
J
T
stg
T
300
°C
L
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Typ.
--
Max.
Units
°C/W
°C/W
°C/W
R
R
R
(IGBT)
1.2
2.6
40
θJC
θJC
θJA
(DIODE)
--
Thermal Resistance, Junction-to-Ambient
--
©2004 Fairchild Semiconductor Corporation
FGAF40N60UFD Rev. A
Electrical Characteristics of the IGBT
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
V
V
= 0V, I = 250uA
600
--
--
--
--
V
CES
GE
C
∆B
/
VCES
J
= 0V, I = 1mA
0.6
V/°C
GE
C
∆T
I
I
Collector Cut-Off Current
G-E Leakage Current
V
V
= V
= V
, V = 0V
--
--
--
--
250
uA
nA
CES
GES
CE
CES
GE
, V = 0V
± 100
GE
GES
CE
On Characteristics
V
G-E Threshold Voltage
I
I
I
= 20mA, V = V
GE
3.5
--
5.1
2.3
3.1
6.5
3.0
--
V
V
V
GE(th)
C
C
C
CE
= 20A,
= 40A,
V
V
= 15V
= 15V
Collector to Emitter
Saturation Voltage
GE
GE
V
CE(sat)
--
Dynamic Characteristics
C
C
C
Input Capacitance
--
--
--
1075
170
50
--
--
--
pF
pF
pF
ies
V
= 30V V = 0V,
, GE
CE
Output Capacitance
oes
res
f = 1MHz
Reverse Transfer Capacitance
Switching Characteristics
t
t
t
t
Turn-On Delay Time
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
15
30
--
--
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
nC
nC
nC
nH
d(on)
Rise Time
r
Turn-Off Delay Time
Fall Time
65
130
100
--
V
R
= 300 V, I = 20A,
C
d(off)
f
CC
= 10Ω, V = 15V,
35
G
GE
Inductive Load, T = 25°C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
470
130
600
30
C
on
off
--
1000
--
ts
t
t
t
t
d(on)
r
37
--
Turn-Off Delay Time
Fall Time
110
80
200
250
--
V
= 300 V, I = 20A,
C
d(off)
f
CC
R
= 10Ω, V = 15V,
G
GE
Inductive Load, T = 125°C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
500
310
810
77
C
on
off
ts
--
1200
150
30
40
--
Q
Q
Q
g
V
V
= 300 V, I = 20A,
CE
GE
C
20
ge
gc
= 15V
25
L
Measured 5mm from PKG
14
e
Electrical Characteristics of DIODE
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
--
Typ.
1.4
1.3
50
Max.
1.7
--
Units
T
T
T
T
T
T
T
T
=
25°C
= 100°C
25°C
= 100°C
25°C
= 100°C
25°C
= 100°C
C
C
C
C
C
C
C
C
V
Diode Forward Voltage
I
= 15A
F
V
FM
--
=
--
95
--
t
Diode Reverse Recovery Time
ns
A
rr
--
74
=
--
4.5
6.5
80
6.0
--
Diode Peak Reverse Recovery
Current
I = 15A,
di/dt = 200A/us
F
I
rr
--
=
--
180
--
Q
Diode Reverse Recovery Charge
nC
rr
--
220
©2004 Fairchild Semiconductor Corporation
FGAF40N60UFD Rev. A
160
120
80
40
0
80
70
60
50
40
30
20
10
0
Common Emitter
Common Emitter
VGE=15V
℃
Tc = 25
20V
℃
Tc= 25
℃
Tc= 125
15V
12V
VGE = 10V
0.5
0
2
4
6
8
1
10
Collector-Emitter Voltage,VCE(V)
Collector-Emitter Voltage, VCE(V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage
Characteristics
30
4
Common Emitter
Vcc = 300V
Load Current : peak of square wave
25
Vge=15V
3
40A
20
15
10
20A
2
1
0
Ic=10A
5
0
Duty cycle : 50%
℃
Tc = 100
Powe Dissipation = 24W
0
30
60
90
120
150
0.1
1
10
100
1000
℃
[
Case Temperature, TC
]
Frequency [kHz]
Fig 3. Saturation Voltage vs.
Fig 4. Load Current vs. Frequency
Case Temperature at Variant Current Level
20
20
Common Emitter
Common Emitter
℃
TC = 25
℃
TC = 125
16
12
8
16
12
8
40A
40A
20A
4
4
20A
IC = 10A
Ic=10A
0
0
0
4
8
12
16
20
0
4
8
12
16
20
Gate - Emitter Voltage, VGE [V]
Gate - Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. V
Fig 6. Saturation Voltage vs. V
GE
GE
©2004 Fairchild Semiconductor Corporation
FGAF40N60UFD Rev. A
3000
2500
2000
1500
1000
500
300
100
Common Emitter
VGE = 0V, f = 1MHz
Common Emitter
±
15V
Vcc=300V,VGE
=
℃
TC = 25
Ic=20A
Cies
Ton
Tr
℃
Tc = 25
℃
Tc = 125
- - - -
Coes
Cres
10
0
200
1
10
Gate Resistance, RG(
100
30
1
10
Collector-Emitter Voltage, VCE (V)
Ω
)
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
1000
2000
Common Emitter
Common Emitter
±
Vcc=300V,VGE= 15V
±
15V
Vcc=300V,VGE
=
Ic=20A
1000
Ic=20A
℃
Tc = 25
℃
Tc = 25
℃
Tc = 125
Eon
Eoff
Toff
℃
Tc = 125
100
Tf
Tf
100
20
50
200
200
1
10
Gate Resistance, RG(
100
1
10
Gate Resistance, RG(
100
Ω
Ω
)
)
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
1000
200
100
Common Emitter
±
15V
V
= 300V, V
=
CC
GE
RG = 10Ω
℃
℃
TC
= 25
TC = 125
Toff
Toff
Tf
100
Ton
Common Emitter
±
15V
V
CC = 300V, VGE
=
R
G = 10Ω
10
Tr
℃
℃
TC
= 25
Tf
T
C = 125
20
10
15
20
25
30
35
40
10
15
20
25
30
35
40
Collector Current, Ic (A)
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
©2004 Fairchild Semiconductor Corporation
FGAF40N60UFD Rev. A
15
12
9
3000
1000
Common Emitter
Ω
RL=15
℃
)
(Tc=25
300V
200V
Eon
Eoff
Vcc=100V
100
6
Common Emitter
±
15V
VCC = 300V, VGE
=
Eoff
RG = 10Ω
3
℃
℃
TC
= 25
TC = 125
10
0
10
15
20
25
30
35
40
0
30
60
90
120
Collector Current , Ic (A)
Gate Charge, Qg (nC)
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
500
100
Ic MAX (Pulsed)
100
50µs
Ic MAX (Continuous)
100µs
10
1
1ms
10
1
DC Operation
Single Nonrepetitive
Pulse Tc = 25oC
Safe Operating Area
Curves must be derated
linearly with increase
in temperature
VGE=20V, TC=100oC
0.1
0.1
1
10
100
1000
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
Collector - Emitter Voltage, VCE [V]
Fig 16. Turn-Off SOA Characteristics
Fig 15. SOA Characteristics
1
0.5
0.2
0.1
0.1
0.05
Pdm
0.02
0.01
t1
t2
0.01
Duty factor D = t1 / t2
Peak Tj = Pdm
×Zthjc + TC
single pulse
1E-5
1E-4
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2004 Fairchild Semiconductor Corporation
FGAF40N60UFD Rev. A
100
10
1
℃
℃
TC
= 25
VR = 200V
IF = 15A
TC = 100
100
10
1
℃
℃
TC
= 25
TC = 100
200
400
di/dt [A/us]
600
800 1000
0
1
2
3
Forward Voltage Drop, V
Fig 18. Forward Characteristics
Fig 19. Reverse Recovery Current
800
120
VR = 200V
VR = 200V
IF = 15A
I
F = 15A
TC
=
25℃
℃
= 25
TC
100
80
600
400
200
0
T
= 100℃
C
℃
TC = 100
60
40
20
200
400
di/dt [A/us]
600
800 1000
200
400
di/dt [A/us]
600
800 1000
Fig 20. Stored Charge
Fig 21. Reverse Recovery Time
©2004 Fairchild Semiconductor Corporation
FGAF40N60UFD Rev. A
Package Dimensions
TO-3PF
5.50 ±0.20
3.00 ±0.20
15.50 ±0.20
ø3.60 ±0.20
(1.50)
0.85 ±0.03
2.00 ±0.20
2.00 ±0.20
2.00 ±0.20
2.00 ±0.20
3.30 ±0.20
4.00 ±0.20
+0.20
–0.10
0.75
5.45TYP
[5.45 ±0.30]
5.45TYP
[5.45 ±0.30]
+0.20
–0.10
0.90
Dimensions in Millimeters
©2004 Fairchild Semiconductor Corporation
FGAF40N60UFD Rev. A
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2004 Fairchild Semiconductor Corporation
Rev. I8
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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相关型号:
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