FGAF40N60UFTU [ONSEMI]
IGBT，600V，PT;
| 型号： | FGAF40N60UFTU |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，600V，PT 局域网 栅 双极性晶体管 功率控制 |
| 文件： | 总9页 (文件大小：405K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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November 2013
FGAF40N60UF
600 V PT IGBT
General Description
Features
Fairchild's UF series of IGBTs provide low conduction and
switching losses. The UF series is designed for applications
such as general inverters and PFC where high speed
switching is a required feature.
•
•
•
High Speed Switching
Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 20 A
High Input Impedance
Applications
General Inverter, PFC
C
G
TO-3PF
E
G
C
E
Absolute Maximum Ratings
T = 25C unless otherwise noted
C
Symbol
VCES
VGES
Description
Collector-Emitter Voltage
Ratings
600
Unit
V
Gate-Emitter Voltage
20
V
Collector Current
@ TC
@ TC = 100C
=
25C
40
A
IC
ICM (1)
PD
Collector Current
20
A
Pulsed Collector Current
160
A
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ TC
@ TC = 100C
=
25C
100
W
W
C
C
40
TJ
Tstg
-55 to +150
-55 to +150
TL
300
C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJA
Parameter
Typ.
Max.
1.2
Unit
C/W
C/W
Thermal Resistance, Junction-to-Case
--
--
Thermal Resistance, Junction-to-Ambient
40
©2004 Fairchild Semiconductor Corporation
FGAF40N60UF Rev. C1
www.fairchildsemi.com
Electrical Characteristics of the IGBT
T = 25C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVCES
BVCES
TJ
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
VGE = 0 V, IC = 250 uA
GE = 0 V, IC = 1 mA
600
--
--
--
--
V
/
V
0.6
V/C
ICES
IGES
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
--
--
--
--
250
uA
nA
± 100
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 20 mA, VCE = VGE
3.5
--
5.1
2.3
3.1
6.5
3.0
--
V
V
V
I
C = 20 A, VGE = 15 V
Collector to Emitter
Saturation Voltage
VCE(sat)
IC = 40 A, VGE = 15 V
--
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
--
--
--
1075
170
50
--
--
--
pF
pF
pF
VCE = 30 V VGE = 0 V,
f = 1 MHz
,
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Turn-On Delay Time
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
15
30
--
--
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
nC
nC
nC
nH
Rise Time
Turn-Off Delay Time
Fall Time
65
130
100
--
VCC = 300 V, IC = 20 A,
R
G = 10 , VGE = 15 V,
35
Inductive Load, TC = 25C
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
470
130
600
30
--
1000
--
37
--
Turn-Off Delay Time
Fall Time
110
80
200
250
--
VCC = 300 V, IC = 20 A,
R
G = 10 , VGE = 15 V,
Inductive Load, TC = 125C
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
500
310
810
77
--
1200
150
30
40
--
VCE = 300 V, IC = 20 A,
Qge
Qgc
Le
20
V
GE = 15 V
25
Measured 5mm from PKG
14
©2004 Fairchild Semiconductor Corporation
FGAF40N60UF Rev. C1
www.fairchildsemi.com
160
120
80
80
70
60
50
40
30
20
10
0
Common Emitter
Tc = 25℃
Common Emitter
VGE=15V
Tc= 25℃
Tc= 125℃
20V
15V
12V
VGE = 10V
40
0
0.5
0
2
4
6
8
1
10
Collector-Emitter Voltage,VCE(V)
Collector-Emitter Voltage, VCE(V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage
Characteristics
30
4
Common Emitter
Vcc = 300V
Load Current : peak of square wave
Vge=15V
25
20
15
10
5
3
40A
20A
2
1
0
Ic=10A
Duty cycle : 50%
Tc = 100℃
Powe Dissipation = 24W
0
0
30
60
90
120
150
0.1
1
10
100
1000
Case Temperature, TC [℃]
Frequency [kHz]
Fig 3. Saturation Voltage vs.
Fig 4. Load Current vs. Frequency
Case Temperature at Variant Current Level
20
20
Common Emitter
Common Emitter
TC = 25℃
TC = 125℃
16
12
16
12
8
8
40A
40A
20A
4
4
20A
IC = 10A
Ic=10A
0
0
0
4
8
12
16
20
0
4
8
12
16
20
Gate - Emitter Voltage, VGE [V]
Gate - Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. V
Fig 6. Saturation Voltage vs. V
GE
GE
©2004 Fairchild Semiconductor Corporation
FGAF40N60UF Rev. C1
www.fairchildsemi.com
3000
2500
2000
1500
1000
500
300
100
Common Emitter
VGE = 0V, f = 1MHz
TC = 25℃
Common Emitter
Vcc=300V,VGE= ± 15V
Ic=20A
Tc = 25℃
Tc = 125℃ - - - -
Cies
Ton
Tr
Coes
Cres
10
0
200
1
10
100
30
1
10
Collector-Emitter Voltage, VCE (V)
Gate Resistance, RG( Ω )
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
1000
2000
Common Emitter
Vcc=300V,VGE=± 15V
Common Emitter
Vcc=300V,VGE= ± 15V
Ic=20A
Tc = 25℃
Tc = 125℃
Ic=20A
1000
Tc = 25℃
Tc = 125℃
Eon
Eoff
Toff
100
Tf
Tf
100
50
20
200
200
1
10
100
1
10
100
Gate Resistance, RG( Ω )
Gate Resistance, RG( Ω )
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
1000
200
100
Common Emitter
VCC = 300V, VGE = ± 15V
RG = 10
TC
= 25℃
TC = 125℃
Toff
100
Ton
Toff
Tf
Common Emitter
VCC = 300V, VGE = ± 15V
R
G = 10
10
Tr
TC 25℃
=
Tf
TC = 125℃
20
10
15
20
25
30
35
40
10
15
20
25
30
35
40
Collector Current, IC [A]
Collector Current, Ic (A)
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
©2004 Fairchild Semiconductor Corporation
FGAF40N60UF Rev. C1
www.fairchildsemi.com
15
12
9
3000
1000
Common Emitter
RL=15 Ω
(Tc=25 ℃)
300V
200V
Vcc=100V
Eon
Eoff
100
6
Common Emitter
VCC = 300V, VGE = ± 15V
Eoff
RG = 10
3
TC
= 25℃
TC = 125℃
10
0
10
15
20
25
30
35
40
0
30
60
90
120
Collector Current , Ic (A)
Gate Charge, Qg (nC)
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
500
100
Ic MAX (Pulsed)
100
50s
Ic MAX (Continuous)
100s
10
1
1ms
10
1
DC Operation
Single Nonrepetitive
Pulse Tc = 25oC
Safe Operating Area
Curves must be derated
linearly with increase
in temperature
VGE=20V, TC=100oC
0.1
0.1
1
10
100
1000
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
Collector - Emitter Voltage, VCE [V]
Fig 16. Turn-Off SOA Characteristics
Fig 15. SOA Characteristics
1
0.5
0.2
0.1
0.1
0.05
Pdm
0.02
0.01
t1
t2
0.01
Duty factor D = t1 / t2
Peak Tj = Pdm
Zthjc + T
single pulse
C
1E-5
1E-4
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2004 Fairchild Semiconductor Corporation
FGAF40N60UF Rev. C1
www.fairchildsemi.com
Mechanical Dimensions
Figure 18. TO3PF,MOLDED,3LD,FULLPACK (AG)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
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FGAF40N60UF Rev. C1
www.fairchildsemi.com
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Rev. I66
©2004 Fairchild Semiconductor Corporation
FGAF40N60UF Rev. C1
www.fairchildsemi.com
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