FGB40N60SM [ONSEMI]
IGBT,600V,40A,场截止;型号: | FGB40N60SM |
厂家: | ONSEMI |
描述: | IGBT,600V,40A,场截止 栅 双极性晶体管 功率控制 |
文件: | 总10页 (文件大小:642K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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2013 年 12 月
FGB40N60SM
600 V, 40 A 场截止 IGBT
特性
概述
•
•
•
•
•
•
•
•
•
最大结温:TJ =175oC
正温度系数,易于并联运行
高电流能力
飞兆半导体的新型场截止第二 代 IGBT 系列产品采用创新型场截
止 IGBT 技术,为焊机和 PFC 等低导通和开关损耗至关重要的
应用提供最佳性能。
低饱和电压:VCE(sat) = 1.9 V (典型值) @ IC = 40 A
高输入阻抗
快速开关
紧密的参数分布
符合 RoHS 标准
仅红外线回流焊
应用
•
焊机、 PFC
C
C
集电极
(FLANGE)
G
TO-263AB/D2-PAK
G
E
E
绝对最大额定值
符号
说明
额定值
单位
V
VCES
600
集电极 - 发射极之间电压
栅极-发射极间电压
瞬态栅极-发射极间电压
集电极电流
20
30
V
VGES
V
@ TC = 25oC
@ TC = 100oC
80
A
IC
40
A
集电极电流
ICM (1)
PD
120
A
集电极脉冲电流
最大功耗
@ TC = 25oC
@ TC = 100oC
349
W
W
oC
oC
oC
174
最大功耗
TJ
-55 至 +175
-55 至 +175
500
工作结温
Tstg
TL
存储温度范围
用于焊接的最大引脚温度,距离外壳 1/8",持续 5 秒
注意:
1: 重复额定值:脉宽受最大结温限制
©2011 飞兆半导体公司
1
www.fairchildsemi.com
FGB40N60SM Rev. C2
热性能
符号
RθJC(IGBT)
RθJA
参数
典型值
最大值
0.43
单位
oC/W
oC/W
-
-
结点 - 壳体的热阻
62.5
结至环境热阻
封装标识与定购信息
器件标识
器件
封装
卷尺寸
带宽
数量
FGB40N60SM
FGB40N60SM
TO-263AB(D2-PAK)
-
-
50
IGBT 电气特性TC = 25°C 除非另有说明
符号
参数
测试条件
最小值 典型值 最大值 单位
关断特性
BVCES
VGE = 0V, IC = 250μA
GE = 0V, IC = 250μA
600
-
-
-
-
V
集电极 - 发射极击穿电压
ΔBVCES
ΔTJ
击穿温度系数电压
V/oC
V
0.6
ICES
IGES
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
-
-
-
-
250
μA
集电极切断电流
±400
nA
G-E 漏电流
导通特性
VGE(th)
IC = 250μA, VCE = VGE
3.5
-
4.5
1.9
6.0
2.3
V
V
G-E 阈值电压
I
C = 40A, VGE = 15V
IC = 40A, VGE = 15V,
C = 175oC
VCE(sat)
集电极 - 发射极间饱和电压
-
2.1
-
V
T
动态特性
Cies
-
-
-
1880
180
50
-
-
-
pF
pF
pF
输入电容
VCE = 30V VGE = 0V,
f = 1MHz
,
Coes
输出电容
Cres
反向传输电容
开关特性
td(on)
tr
-
-
-
-
-
-
-
-
-
-
-
-
-
-
12
20
16
ns
ns
导通延迟时间
上升时间
28
td(off)
tf
92
120
ns
关断延迟时间
下降时间
VCC = 400V, IC = 40A,
R
G = 6Ω, VGE = 15V,
13
17
ns
感性负载,TC = 25oC
Eon
Eoff
Ets
0.87
0.26
1.13
15
1.30
mJ
mJ
mJ
ns
开通开关损耗
关断开关损耗
总开关损耗
导通延迟时间
上升时间
0.34
1.64
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
22
ns
116
16
ns
关断延迟时间
下降时间
VCC = 400V, IC = 40A,
R
G = 6Ω, VGE = 15V,
ns
感性负载, TC = 175oC
Eon
Eoff
Ets
0.97
0.60
1.57
mJ
mJ
mJ
导通开关损耗
关断开关损耗
总开关损耗
©2011 飞兆半导体公司
2
www.fairchildsemi.com
FGB40N60SM Rev. C2
IGBT 电气特性(续)
符号 参数
测试条件
最小值 典型值 最大值 单位
Qg
-
-
-
119
13
180
20
nC
nC
nC
总栅极电荷
VCE = 400V, IC = 40A,
GE = 15V
Qge
Qgc
栅极-发射极间电荷
栅极-发射极间电荷
V
58
90
©2011 飞兆半导体公司
3
www.fairchildsemi.com
FGB40N60SM Rev. C2
典型性能特征
图 1. 典型输出特性
图2. 典型输出特性
120
120
100
80
60
40
20
0
20V
15V
20V
15V
TC = 25oC
TC = 175oC
12V
12V
10V
100
80
60
40
20
10V
VGE = 8V
VGE = 8V
0
0
0
2
4
6
2
4
6
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
图 3. 典型饱和电压特性图
图 4. 饱和电压与可变电流强度下壳温的关系
3.0
120
100
80
60
40
20
0
Common Emitter
VGE = 15V
Common Emitter
VGE = 15V
TC = 25oC
TC = 175oC
80A
2.5
2.0
40A
1.5
IC = 20A
1.0
25
50
75
100
125
150
175
0
1
2
3
4
Case Temperature, TC [oC]
Collector-Emitter Voltage, VCE [V]
图 5. 饱和电压与 V 的关系
图 6. 饱和电压与 V 的关系
GE
GE
20
16
12
8
20
16
12
8
Common Emitter
TC = 25oC
Common Emitter
TC = 175oC
40A
80A
80A
4
4
40A
IC = 20A
IC = 20A
0
0
4
8
12
16
20
4
8
12
16
20
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
©2011 飞兆半导体公司
4
www.fairchildsemi.com
FGB40N60SM Rev. C2
典型性能特征
图 7. 电容特性
图 8. 栅极电荷特性
15
12
9
4000
3000
2000
1000
Common Emitter
TC = 25oC
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
400V
VCC = 200V
300V
Cies
6
Coes
Cres
3
0
0
0.1
0
40
80
120
1
10
30
Collector-Emitter Voltage, VCE [V]
Gate Charge, Qg [nC]
图 9. 导通特性与栅极电阻的关系
图 10. 关断特性与栅极电阻的关系
1000
100
10
100
10
1
tr
td(off)
td(on)
tf
Common Emitter
VCC = 400V, VGE = 15V
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
IC = 40A
TC = 25oC
TC = 175oC
TC = 25oC
TC = 175oC
1
0
10
20
30
40
50
0
10
20
30
40
50
Gate Resistance, RG [Ω]
Gate Resistance, RG [Ω]
图 11. 开关损耗与栅极电阻的关系
图 12. 导通特性与集电极电流的关系
1000
5
Common Emitter
VGE = 15V, RG = 6Ω
TC = 25oC
TC = 175oC
100
Eon
tr
1
Eoff
Common Emitter
10
td(on)
VCC = 400V, VGE = 15V
IC = 40A
TC = 25oC
TC = 175oC
1
20
0.1
30
40
50
60
70
80
0
10
20
30
40
50
Collector Current, IC [A]
Gate Resistance, RG [Ω]
©2011 飞兆半导体公司
5
www.fairchildsemi.com
FGB40N60SM Rev. C2
典型性能特征
图 13. 关断特性与集电极电流的关系
图 14. 开关损耗与集电极电流的关系
6
1000
100
10
td(off)
Eon
1
tf
Eoff
Common Emitter
Common Emitter
VGE = 15V, RG = 6Ω
VGE = 15V, RG = 6Ω
TC = 25oC
TC = 25oC
TC = 175oC
TC = 175oC
0.1
20
1
20
30
40
50
60
70
80
30
40
50
60
70
80
Collector Current, IC [A]
Collector Current, IC [A]
图 15. 负载电流与频率的关系
图 16. SOA 特性
300
100
100
90
80
70
60
50
40
30
20
10
0
Vcc = 600 V
Load Current
10μs
: peak of square wave
Duty cycle : 50%
Tc = 100oC
Power Dissipation
: 174W
100μs
1ms
10 ms
DC
10
1
Tc = 100oC
*Notes:
1. TC = 25oC
2. TJ = 175oC
0.1
0.01
3. Single Pulse
1
10
100
1000
1k
10k
100k
1M
Collector-Emitter Voltage, VCE [V]
Switching Frequency, f [Hz]
图 17. IGBT 瞬态热阻
1
0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
single pulse
PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.001
10-5
10-4
10-3
10-2
10-1
100
Rectangular Pulse Duration [sec]
©2011 飞兆半导体公司
6
www.fairchildsemi.com
FGB40N60SM Rev. C2
机械尺寸
图 18. TO-263 2L (D2PAK) - 2LD,TO263, SURFACE MOUNT
封装图纸作为一项服务,提供给考虑飞兆半导体元件的客户。具体参数可能会有变化,且不会做出相应通知。请注意图纸上的版本和
/ 或日期,并联系飞兆半导体代表核实或获得最新版本。封装规格并不超出飞兆公司全球范围内的条款与条件,尤其指保修,保修涵盖
飞兆半导体的全部产品。
随时访问飞兆半导体在线封装网页,可以获取最新的封装图纸:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002
尺寸单位为毫米
©2011 飞兆半导体公司
7
www.fairchildsemi.com
FGB40N60SM Rev. C2
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