FGB5N60UNDF [ONSEMI]
IGBT，600V，5A，短路额定;
| 型号： | FGB5N60UNDF |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，600V，5A，短路额定 电动机控制 栅 双极性晶体管 |
| 文件： | 总11页 (文件大小：462K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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September 2013
FGB5N60UNDF
600 V, 5 A
Short Circuit Rated IGBT
General Description
Using advanced NPT IGBT technology, Fairchild’s the NPT
IGBTs offer the optimum performance for low-power inverter-
driven applications where low-losses and short-circuit rugged-
ness features are essential, such as sewing machine, CNC,
motor control and home appliances.
Features
•
•
•
•
•
Short Circuit Rated 10 us
High Current Capability
High Input Impedance
Fast Switching
RoHS Compliant
Applications
•
Sewing Machine, CNC, Home Appliances, Motor Control
C
COLLECTOR
(FLANGE)
G
TO-263AB/D2-PAK
G
C
E
E
Absolute Maximum Ratings
Symbol
Description
Ratings
Unit
VCES
VGES
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
600
± 20
10
V
V
A
A
A
@ TC = 25oC
@ TC = 100oC
IC
ICM (1)
IF
Collector Current
5
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 100oC
Pulsed Collector Current
15
Diode Forward Current
5
2.5
A
A
Diode Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
73.5
W
W
oC
oC
PD
29.4
TJ
-55 to +150
-55 to +150
Tstg
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
TL
300
oC
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Typ.
Max.
1.7
Unit
oC/W
oC/W
oC/W
4.5
Thermal Resistance, Junction to Ambient (PCB Mount)(2)
40
Notes:
2: Mounted on 1” square PCB (FR4 or G-10 material)
©2011 Fairchild Semiconductor Corporation
FGB5N60UNDF Rev. C1
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
Device
Package
Rel Size
Tape Width
Quantity
FGB5N60UNDF
FGB5N60UNDF
TO-263AB(D2-PAK)
-
50
Electrical Characteristics of the IGBT
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVCES
ICES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250μA
600
-
-
-
-
1
V
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
-
-
mA
uA
IGES
±10
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 5mA, VCE = VGE
IC = 5A, VGE = 15V
IC = 5A, VGE = 15V,
5.5
-
6.8
1.9
8.5
2.4
V
V
VCE(sat)
Collector to Emitter Saturation Voltage
-
2.3
-
V
T
C = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
-
-
-
181
28
7
pF
pF
pF
V
CE = 30V VGE = 0V,
,
Output Capacitance
f = 1MHz
Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
-
-
-
-
-
-
-
-
-
-
-
-
-
-
5.4
1.9
ns
ns
Rise Time
Turn-Off Delay Time
Fall Time
25.4
101
0.08
0.07
0.15
5.2
ns
VCC = 400V, IC = 5A,
R
G = 10Ω, VGE = 15V,
202
ns
Inductive Load, TC = 25oC
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
mJ
mJ
mJ
ns
2.3
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
26.6
125
0.15
0.09
0.24
ns
VCC = 400V, IC = 5A,
G = 10Ω, VGE = 15V,
Inductive Load, TC = 125oC
R
ns
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
mJ
mJ
mJ
VCC = 350V,
G = 100Ω, VGE = 15V,
C = 150oC
Tsc
Short Circuit Withstand Time
R
T
10
-
-
μs
©2011 Fairchild Semiconductor Corporation
FGB5N60UNDF Rev. C1
2
www.fairchildsemi.com
Electrical Characteristics of the IGBT
T = 25°C unless otherwise noted
C
Qg
Total Gate Charge
-
-
-
12.1
1.7
nC
nC
nC
V
V
CE = 400V, IC = 5A,
GE = 15V
Qge
Qgc
Gate to Emitter Charge
Gate to Collector Charge
7.2
Electrical Characteristics of the Diode
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
1.7
1.6
35
Max Unit
T
T
T
C = 25oC
C = 125oC
C = 25oC
-
-
-
-
-
-
2.2
VFM
Diode Forward Voltage
IF = 5A
V
-
trr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
ns
TC = 125oC
C = 25oC
TC = 125oC
87
IF =5A, dIF/dt = 200A/μs
T
71
Qrr
nC
240
-
©2011 Fairchild Semiconductor Corporation
FGB5N60UNDF Rev. C1
3
www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
30
30
TC = 25oC
20V
TC = 125oC
17V
20V
17V
15V
15V
20
20
10
0
VGE = 12V
VGE = 12V
10
0
0.0
1.5
3.0
4.5
6.0
7.5
9.0
0.0
1.5
3.0
4.5
6.0
7.5
9.0
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer Characteristics
20
20
Common Emitter
VGE = 15V
Common Emitter
VCE = 20V
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
15
15
10
5
10
5
0
0
0
1
2
3
4
5
6
0
3
6
9
12
15
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage,VGE [V]
Figure 5. Saturation Voltage vs. Case
Figure 6. Saturation Voltage vs. V
GE
Temperature at Variant Current Level
3.5
3.0
2.5
2.0
1.5
1.0
20
Common Emitter
VGE = 15V
Common Emitter
TC = 25oC
10A
16
12
8
10A
5A
5A
IC = 2.5A
IC = 2.5A
4
0
25
50
75
100
125
4
8
12
16
20
Case Temperature, TC [oC]
Gate-Emitter Voltage, VGE [V]
©2011 Fairchild Semiconductor Corporation
FGB5N60UNDF Rev. C1
4
www.fairchildsemi.com
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 8. Capacitance Characteristics
GE
1000
20
Common Emitter
TC = 125oC
Cies
16
12
8
10A
Coes
100
5A
IC = 2.5A
8
Cres
10
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
4
1
0
1
10
30
4
12
16
20
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage, VGE [V]
Figure 9. Gate charge Characteristics
Figure 10. SOA Characteristics
15
20
10μs
400V
10
12
100μs
VCC = 100V
1ms
10 ms
200V
9
DC
1
6
*Notes:
1. TC = 25oC
2. TJ = 150oC
3
Common Emitter
TC = 25oC
0.1
3. Single Pulse
0
0.05
0
5
10
15
1
10
100
1000
Gate Charge, Qg [nC]
Collector-Emitter Voltage, VCE [V]
Figure 11. Turn-on Characteristics vs.
Gate Resistance
Figure 12. Turn-off Characteristics vs.
Gate Resistance
100
1000
Common Emitter
VCC = 400V, VGE = 15V
IC = 5A
TC = 25oC
TC = 125oC
tf
100
tr
10
td(off)
td(on)
Common Emitter
VCC = 400V, VGE = 15V
10
1
IC = 5A
TC = 25oC
TC = 125oC
1
0
10
20
30
40
50
0
10
20
30
40
50
Gate Resistance, RG [Ω]
Gate Resistance, RG [Ω]
©2011 Fairchild Semiconductor Corporation
FGB5N60UNDF Rev. C1
5
www.fairchildsemi.com
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
Figure 14. Turn-off Characteristics vs.
Collector Current
10
1000
td(on)
tf
100
tr
1
td(off)
10
Common Emitter
VGE = 15V, RG =10Ω
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
0.1
TC = 25oC
TC = 125oC
1
2
4
6
8
10
2
4
6
8
10
Collector Current, IC [A]
Collector Current, IC [A]
Figure 15. Switching Loss vs.
Gate Resistance
Figure 16. Switching Loss vs
CollectorCurrent
1000
1000
Common Emitter
VCC = 400V, VGE = 15V
IC = 5A
TC = 25oC
TC = 125oC
Eon
100
Eon
Eoff
Common Emitter
VGE = 15V, RG = 10Ω
100
50
TC = 25oC
TC = 125oC
Eoff
10
2
4
6
8
10
0
10
20
30
40
50
Collector Current, IC [A]
Gate Resistance, RG [Ω]
Figure 17. Turn off Switching
SOA Characteristics
Figure 18. Forward Characteristics
20
30
10
10
TC = 125oC
TC = 75oC
TC = 25oC
Safe Operating Area
VGE = 15V, TC = 125oC
1
1
1
10
100
1000
0
1
2
3
4
5
Forward Voltage, VF [V]
Collector-Emitter Voltage, VCE [V]
©2011 Fairchild Semiconductor Corporation
FGB5N60UNDF Rev. C1
6
www.fairchildsemi.com
Typical Performance Characteristics
Figure 19. Reverse Current
Figure 20. Stored Charge
100
0.25
TC = 25oC
TC = 125oC
TC = 125oC
10
0.20
200A/μs
1
0.15
0.10
0.05
0.00
diF/dt = 100A/μs
TC = 75oC
0.1
200A/μs
0.01
TC = 25oC
diF/dt =100A/μs
0.001
0
1
2
3
4
5
0
150
300
450
600
Forwad Current, IF [A]
Reverse Voltage, VR [V]
Figure 21. Reverse Recovery Time
120
TC = 25oC
diF/dt = 100A/μs
TC = 125oC
90
200A/μs
60
diF/dt = 100A/μs
30
200A/μs
0
0
1
2
3
4
5
Forward Current, IF [A]
Figure 22. Transient Thermal Impedance of IGBT
2
1
0.5
0.2
0.1
0.05
0.02
0.1
PDM
0.01
single pulse
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
Rectangular Pulse Duration [sec]
©2011 Fairchild Semiconductor Corporation
FGB5N60UNDF Rev. C1
7
www.fairchildsemi.com
Mechanical Dimensions
Figure 23. TO-263 2L (D2PAK) - 2LD,TO263, SURFACE MOUNT
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002
Dimensions in Millimeters
©2011 Fairchild Semiconductor Corporation
FGB5N60UNDF Rev. C1
8
www.fairchildsemi.com
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®*
®
®
®
®
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Green FPS™
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QS™
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™
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®
®
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®
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®
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®
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®
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
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First Production
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Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
©2011 Fairchild Semiconductor Corporation
FGB5N60UNDF Rev. C1
9
www.fairchildsemi.com
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
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designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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