FGD2736G3-F085V [ONSEMI]

IGBT，EcoSPARK® 3 270mJ，360V，N 沟道点火;


型号：	FGD2736G3-F085V
厂家：	ONSEMI
描述：	IGBT，EcoSPARK® 3 270mJ，360V，N 沟道点火双极性晶体管
文件：	总8页 (文件大小：482K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FGD2736G3-F085V

EcoSPARK^ꢀ3 Ignition IGBT

270 mJ, 360 V, N−Channel Ignition IGBT

Features

• SCIS Energy = 270 mJ at T = 25°C

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• Logic Level Gate Drive

• Low Saturation Voltage

• RoHS Compliant

• AEC−Q101 Qualified and PPAP Capable

COLLECTOR

Applications

• Automotive Ignition Coil Driver Circuits

• High Current Ignition System

• Coil on Plug Applications

GATE

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

EMITTER

Symbol

Parameter

Value

Units

Collector−to−Emitter Breakdown

360

CER

Voltage (I = 1 mA)

Emitter−to−Collector Voltage − Reverse

ECS

Battery Condition (I = 10 mA)

ISCIS = 13.4 A, L = 3.0 mHy, R = 1 KW

270

170

37.5

24.3

SCIS25

= 25°C (Note 1)

DPAK (SINGLE GAUGE)

CASE 369C

ISCIS = 10.8 A, L = 3.0 mHy, R = 1 KW

SCIS150

= 150°C (Note 2)

Collector Current Continuous

at V = 5.0 V, T = 25°C

C25

MARKING DIAGRAM

Collector Current Continuous

at V = 5.0 V, T = 110°C

C110

AYWW

FGD

2736D

Gate−to−Emitter Voltage Continuous

Power Dissipation Total, T = 25°C

150

GEM

Power Dissipation Derating, T > 25°C

1.1

W/°C

°C

= Assembly Location

= Year

= Work Week

T /T

Operating Junction and Storage

Temperature Range

−40 to +175

STG

FGD2736D = Device Code

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

300

°C

Reflow soldering according to JESD020C

260

°C

PKG

ORDERING INFORMATION

ESD

HBM − Electrostatic Discharge Voltage

at 100 pF, 1500 W

See detailed ordering and shipping information on page 2

of this data sheet.

CDM − Electrostatic Discharge Voltage

at 1 W

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Self clamped inductive Switching Energy (ESCIS25) of 270 mJ is based on

the test conditions that is starting T = 25°C, L = 3 mHy, ISCIS = 13.4 A,

VCC = 100 V during inductor charging and VCC = 0 V during time in clamp.

2. Self Clamped inductive Switching Energy (ESCIS150) of 170 mJ is based on

the test conditions that is starting T = 150°C, L = 3mHy, ISCIS = 10.8 A,

VCC = 100 V during inductor charging and VCC = 0 V during time in clamp.

Publication Order Number:

April, 2020 − Rev. 1

FGD2736G3−F085V/D

FGD2736G3−F085V

THERMAL RESISTANCE RATINGS

Characteristic

Junction−to−Case – Steady State (Drain)

Symbol

Max

Units

1.1

°C/W

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

OFF CHARACTERISTICS

Collector−to−Emitter Breakdown Voltage

Emitter−to−Collector Breakdown Voltage

= 2 mA, V = 0 V,

330

350

−

390

410

−

CER

CES

ECS

GES

= 1 kW, T = −40 to 150°C

= 10 mA, V

= 0 V,

= 0, T = −40 to 150°C

= −75 mA, V

= 0 V,

T = 25°C

Gate−to−Emitter Breakdown Voltage

Collector−to−Emitter Leakage Current

2 mA

−

GES

= 175 V

T = 25°C

CER

= 1 kW

T = 150°C

−

Emitter−to−Collector Leakage Current

= 24 V

T = 25°C

−

ECS

T = 150°C

−

Series Gate Resistance

−

110

−

Gate−to−Emitter Resistance

10K

30K

ON CHARACTERISTICS

Collector−to−Emitter Saturation Voltage

= 6 A, V

= 4 V, T = 25°C

−

1.25

1.45

1.60

1.35

1.65

1.80

CE(SAT)

= 10 A, V

= 4.5 V, T = 25°C

= 4.5 V, T = 150°C

DYNAMIC CHARACTERISTICS

Gate Charge

= 10 A, V

= 1 mA

= 12 V, V = 5 V

−

1.3

0.75

−

1.6

1.1

3.0

−

2.2

1.8

−

G(ON)

Gate−to−Emitter Threshold Voltage

T = 25°C

GE(TH)

= V

T = 150°C

Gate−to−Emitter Plateau Voltage

= 12 V, I

= 10 A

GEP

SWITCHING CHARACTERISTICS

Current Turn−On Delay Time−Resistive

Current Rise Time−Resistive

= 14 V, R = 1 W, V = 5 V,

−

0.9

3.0

4.4

1.9

(ON)R

= 470 W, T = 25°C

(OFF)L

Current Turn−Off Delay Time−Inductive

Current Fall Time−Inductive

= 300 V, L = 1 mH, V = 5 V,

= 470 W, I = 6.5 A, T = 25°C

CE J

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

PACKAGE MARKING AND DEVICE ORDERING INFORMATION

†

Device Marking

Device

Package

Reel Diameter

Tape Width

Qty

FGD2736G3

FGD2736G3−F085V

DPAK (Pb−Free)

330 mm

16 mm

2500

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

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FGD2736G3−F085V

TYPICAL CHARACTERISTICS

Figure 1. Self Clamped Inductive Switching

Figure 2. Self Clamped Inductive Switching

Current vs. Inductance

Current vs. Time in Clamp

Figure 3. Collector−to−Emitter On−State

Figure 4. Collector−to−Emitter On−State

Voltage vs. Junction Temperature

Figure 5. Collector−to−Emitter On−State

Figure 6. Collector−to−Emitter On−State

Voltage vs. Collector Current

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FGD2736G3−F085V

TYPICAL CHARACTERISTICS

Figure 7. Collector−to−Emitter On−State Voltage vs.

Figure 8. Transfer Characteristics

Collector Current

Figure 9. Current Derating

Figure 10. Gate Charge

Figure 11. Threshold Voltage vs. Junction

Temperature

Figure 12. Leakage Current vs. Junction

Temperature

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FGD2736G3−F085V

TYPICAL CHARACTERISTICS

Figure 13. Switching Time vs. Junction Temperature

Figure 14. Capacitance vs. Collector−to−Emitter

Voltage

Figure 15. Break Down Voltage vs. Series Resistance

Figure 16. IGBT Normalized Transient Thermal Impedance,

Junction−to−Case

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FGD2736G3−F085V

TEST CIRCUITS AND WAVEFORMS

Figure 18. t_ONand t_OFFSwitching Test Circuit

Figure 17. Inductive Switching Test Circuit

Figure 19. Energy Test Circuit

Figure 20. Energy Waveforms

ECOSPARK is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.

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MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

DPAK (SINGLE GAUGE)

CASE 369C

ISSUE G

DATE 31 MAY 2023

SCALE 1:1

GENERIC

MARKING DIAGRAM*

XXXXXXG

ALYWW

AYWW

XXX

XXXXXG

Discrete

XXXXXX = Device Code

= Assembly Location

= Wafer Lot

STYLE 1:

STYLE 2:

PIN 1. GATE

2. DRAIN

STYLE 3:

STYLE 4:

STYLE 5:

= Year

= Work Week

= Pb−Free Package

PIN 1. BASE

PIN 1. ANODE

2. CATHODE

3. ANODE

PIN 1. CATHODE

2. ANODE

3. GATE

PIN 1. GATE

2. ANODE

3. CATHODE

4. ANODE

2. COLLECTOR

3. EMITTER

3. SOURCE

4. DRAIN

4. COLLECTOR

4. CATHODE

4. ANODE

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may

or may not be present. Some products may

not follow the Generic Marking.

STYLE 6:

PIN 1. MT1

2. MT2

STYLE 7:

PIN 1. GATE

STYLE 8:

PIN 1. N/C

STYLE 9:

PIN 1. ANODE

2. CATHODE

STYLE 10:

PIN 1. CATHODE

2. ANODE

2. COLLECTOR

2. CATHODE

3. GATE

4. MT2

3. EMITTER

4. COLLECTOR

3. ANODE

4. CATHODE

3. RESISTOR ADJUST

4. CATHODE

3. CATHODE

4. ANODE

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON10527D

DPAK (SINGLE GAUGE)

PAGE 1 OF 1

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TECHNICAL PUBLICATIONS:

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For additional information, please contact your local Sales Representative at

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

FGD2736G3-F085V [ONSEMI]

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