FGD3050G2 [ONSEMI]
IGBT，500V，27A，1.3V，300mJ，DPAKEcoSPARK® II，N 沟道点火;
| 型号： | FGD3050G2 |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，500V，27A，1.3V，300mJ，DPAKEcoSPARK® II，N 沟道点火 双极性晶体管 |
| 文件： | 总8页 (文件大小：489K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
ECOSPARK) II, Ignition IGBT
COLLECTOR
300 mJ, 500 V, N−Channel Ignition IGBT
GATE
FGD3050G2
Features
EMITTER
• SCIS Energy = 300 mJ at T = 25°C
J
• Logic Level Gate Drive
• AEC−Q101 Qualified and PPAP Capable
• This Device is Pb−Free, Halid Free and is RoHS Compliant
COLLECTOR
GATE
Applications
• Automotive Ignition Coil Driver Circuits
• Coil on Plug Application
EMITTER
DPAK3 (TO−252 3 LD)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
CASE 369AS
Symbol
Parameter
Value
Unit
V
BV
500
Collector to Emitter Breakdown
CER
MARKING DIAGRAM
Voltage (I = 1 mA)
C
V
mJ
mJ
A
BV
20
300
180
32
Emitter to Collector Voltage − Reverse
ECS
Battery Condition (I = 10 mA)
C
$Y&Z&3&K
FGD
3050G2
E
I
= 14.2 A, L = 3.0 mHy, R = 1 kW
GE
SCIS25
SCIS
SCIS
T
= 25°C
C
E
I
= 11.0 A, L = 3.0 mHy, R = 1 kW
SCIS150
GE
C
T
= 150°C
I
Collector Current Continuous
at V = 5.0 V, T = 25°C
C25
GE
C
A
I
27
Collector Current Continuous
at V = 5.0 V, T = 110°C
C110
$Y
&Z
&3
&K
= onsemi Logo
= Assembly Plant Code
= 3−Digit Date Code
GE
C
V
W
V
10
150
1.1
Gate to Emitter Voltage Continuous
GEM
= 2−Digits Lot Run Traceability Code
P
D
Power Dissipation Total, T = 25°C
FGD3050G2 = Specific Device Code
C
W/°C
°C
Power Dissipation Derating, T > 25°C
C
T
J
−40 to +175
−40 to +175
300
Operating Junction Temperature Range
Storage Junction Temperature Range
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
T
T
°C
°C
STG
T
L
Max. Lead Temperature for Soldering
(Leads at 1.6 mm from case for 10 s)
°C
260
4
Max. Lead Temperature for Soldering
(Package Body for 10 s)
PKG
kV
ESD
Electrostatic Discharge Voltage at 100 pF,
1500 W
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
September, 2022 − Rev. 2
FGD3050G2/D
FGD3050G2
THERMAL CHARACTERISTICS
Symbol
Characteristic
Max
Units
R
Thermal Resistance Junction to Case
0.9
°C/W
q
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
C
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
OFF CHARACTERISTICS
BV
BV
BV
Collector to Emitter Breakdown
Voltage
I
= 2 mA, V = 0 V,
GE
470
495
20
−
−
−
530
555
−
V
V
V
CER
CES
ECS
GES
CE
R
= 1 kW, T = −40 to 150°C
GE
J
Collector to Emitter Breakdown
Voltage
I
= 10 mA, V
= 0 V,
CE
GE
R
= 0 W, T = −40 to 150°C
GE
J
Emitter to Collector Breakdown
Voltage
I
= −75 mA, V
= 0 V,
CE
GE
T = 25°C
J
BV
I
Gate to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
I
=
5 mA
12
−
14
−
−
25
1
V
GES
V
R
= 250 V
T = 25°C
J
mA
mA
mA
CER
CE
= 1 kW
GE
T = 150°C
J
−
−
I
Emitter to Collector Leakage Current
V
= 15 V
T = 25°C
J
−
−
1
ECS
EC
T = 150°C
J
−
−
40
−
R
R
Series Gate Resistance
−
111
−
W
1
2
Gate to Emitter Resistance
10
30
kW
ON CHARACTERISTICS
V
V
V
Collector to Emitter Saturation
Voltage
I
I
I
= 6 A, V
= 4 V, T = 25°C
−
−
−
1.1
1.3
1.6
1.2
V
V
V
CE(SAT)
CE(SAT)
CE(SAT)
CE
CE
CE
GE
J
Collector to Emitter Saturation
Voltage
= 10 A, V
= 4.5 V, T = 150°C
1.45
1.75
GE
GE
J
Collector to Emitter Saturation
Voltage
= 15 A, V
= 4.5 V, T = 150°C
J
DYNAMIC CHARACTERISTICS
Q
Gate Charge
I
I
= 10 A, V
= 1 mA
= 12 V, V = 5 V
−
1.3
0.75
−
22
1.6
1.1
2.7
−
2.2
1.8
−
nC
V
G(ON)
CE
CE
GE
V
Gate to Emitter Threshold Voltage
T = 25°C
J
GE(TH)
CE
V
= V
CE
GE
T = 150°C
J
V
Gate to Emitter Plateau Voltage
V
= 12 V, I
= 10 A
V
GEP
CE
CE
SWITCHING CHARACTERISTICS
t
Current Turn−On Delay
Time−Resistive
V
CE
V
GE
= 14 V, R = 1 W,
−
0.9
4
ms
d(ON)R
L
= 5 V, R = 1 kW,
G
t
Current Rise Time−Resistive
−
−
1.6
5.4
7
ms
ms
rR
t
Current Turn−Off Delay
Time−Inductive
V
CE
V
GE
= 300 V, L = 2 mH,
15
d(OFF)L
= 5 V, R = 1 kW,
G
t
fL
Current Fall Time−Inductive
−
1.4
15
ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2
FGD3050G2
TYPICAL CHARACTERISTICS
100
90
40
SCIS Curves valid for V
Voltages of <470 V
SCIS Curves valid for V
Voltages of <470 V
GE CE
clamp
clamp
R
= 1 kW, V = 5 V, V = 100 V
R
= 1 kW, V = 5 V, V = 100 V
G
GE CE
G
80
70
60
50
40
30
20
10
0
30
20
T = 25°C
J
T = 25°C
J
10
0
T = 150°C
J
T = 150°C
J
0
20
40
60
80 100 120 140 160 180
8
0
2
4
6
10
12
t , TIME IN CLAMP (ms)
CLP
L, INDUCTANCE (mHy)
Figure 1. Self Clamped Inductive Switching
Current vs. Time in Clamp
Figure 2. Self Clamped Inductive Switching
Current vs. Inductance
1.40
1.35
1.30
1.20
1.15
1.10
I
= 10 A
V
= 3.7 V
I
= 6 A
CE
GE
CE
V
GE
= 4.0 V
V
V
V
= 3.7 V
= 4.0 V
= 4.5 V
GE
GE
GE
V
GE
= 4.5 V
V
= 8.0 V
GE
1.25
1.20
1.05
1.00
0.95
0.90
V
= 5.0 V
V
= 5.0 V
GE
GE
V
GE
= 8.0 V
V
GE
= 10.0 V
1.15
1.10
V
GE
= 10.0 V
−75 −50 −25
0
25 50 75 100 125 150 175
−75 −50 −25
0
25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 3. Collector to Emitter On−State Voltage
Figure 4. Collector to Emitter On−State Voltage
vs. Junction Temperature
vs. Junction Temperature
50
40
30
20
10
0
50
40
30
20
10
0
V
= 10.0 V
VGE = 10.0 V
VGE = 8.0 V
VGE = 5.0 V
VGE = 4.5 V
VGE = 4.0 V
VGE = 3.7 V
GE
VGE = 8.0 V
VGE = 5.0 V
VGE = 4.5 V
VGE = 4.0 V
VGE = 3.7 V
T = −40°C
T = 25°C
J
J
2
5
0
0
1
3
4
1
2
3
4
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On−State Voltage
Figure 6. Collector to Emitter On−State Voltage
vs. Collector Current
vs. Collector Current
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3
FGD3050G2
TYPICAL CHARACTERISTICS (continued)
50
50
40
VGE = 10.0 V
VGE = 8.0 V
VGE = 5.0 V
VGE = 4.5 V
VGE = 4.0 V
VGE = 3.7 V
DUTY CYCLE < 0.5% MAX
PULSE DURATION = 80 ms
40
30
V
CE
= 5 V
30
20
10
0
20
10
0
T = 25°C
J
T = 175°C
J
T = −40°C
J
T = 175°C
J
4
1
5
0
1
2
3
5
2
3
4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
GE
, GATE TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter On−State Voltage
Figure 8. Transfer Characteristics
vs. Collector Current
2.0
1.8
40
30
20
V
= V
GE
= 1 mA
V
GE
= 5 V
CE
I
CE
1.6
1.4
1.2
10
0
1.0
0.8
50
25
75
100
125
150
175
100
125 150 175
−75 −50 −25
0
25 50 75
T , CASE TEMPERATURE (°C)
C
T , JUNCTION TEMPERATURE (°C)
J
Figure 9. DC Collector Current vs. Case
Temperature
Figure 10. Threshold Voltage vs. Junction
Temperature
10000
1000
100
10
8
V
ECS
V
ECS
V
ECS
V
ECS
V
ECS
= 15 V
I
= 6.5 A, V = 5 V, R = 1 kW
Inductive t
OFF
CE
GE
G
= 450 V
= 425 V
= 400 V
= 250 V
Resistive t
OFF
6
4
10
Resistive t
ON
1
2
0
0.1
−75 −50
−25
0
25 50 75 100 125 150 175
25
50
75
100
125
150
175
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 11. Leakage Current vs. Junction
Temperature
Figure 12. Switching Time vs. Junction
Temperature
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4
FGD3050G2
TYPICAL CHARACTERISTICS (continued)
2000
1600
1200
800
400
0
5
I
= 10 A, T = 25°C
J
f = 1 MHz
= 0 V
CE
V
GE
4
V
CE
= 6 V
V
CE
= 12 V
C
IES
3
2
C
RES
1
C
OES
0
0
5
10
15
20
25
0
5
10
15
20
25
30
Q , GATE CHARGE (nC)
G
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 13. Capacitance vs. Collector to Emitter
Voltage
Figure 14. Gate Charge
540
I
= 10 mA
CER
520
500
T = −40°C
J
T = 25°C
J
T = 175°C
J
480
460
10
1000
6000
100
R , SERIES GATE RESISTANCE (W)
G
Figure 15. Breakdown Voltage vs. Series Gate Resistance
2
1
DUTY CYCLE − DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
−1
−5
−4
−3
−2
10
10
10
10
t , RECTANGULAR PULSE DURATION (s)
10
1
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
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5
FGD3050G2
SPICE THERMAL MODEL
CTHERM1 th 6 5.7337E-05
CTHERM2 6 5 5.3736E-03
CTHERM3 5 4 1.1141E-03
CTHERM4 4 3 2.8690E-04
CTHERM5 3 2 7.4429E-04
CTHERM6 2 tl 3.7019E-03
RTHERM1 th 6 6.6403E-03
RTHERM2 6 5 5.8449E-01
RTHERM3 5 4 5.3930E-02
RTHERM4 4 3 9.2492E-03
RTHERM5 3 2 1.5794E-02
RTHERM6 2 tl 1.7974E-01
PACKAGE MARKING AND ORDERING INFORMATION
†
Device
FGD3050G2
Device Marking
FGD3050G2
Package
Shipping
DPAK3 (TO−252 3 LD)
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ECOSPARK is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States
and/or other countries.
www.onsemi.com
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK3 (TO−252 3 LD)
CASE 369AS
ISSUE A
DATE 28 SEP 2022
GENERIC
MARKING DIAGRAM*
XXXXXX
XXXXXX
AYWWZZ
XXXX = Specific Device Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ
= Assembly Lot Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON13810G
DPAK3 (TO−252 3 LD)
PAGE 1 OF 1
DESCRIPTION:
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
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ONLINE SUPPORT: www.onsemi.com/support
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