FGD3N60UNDF [ONSEMI]
600 V，3 A，短路额定 IGBT;
| 型号： | FGD3N60UNDF |
| 厂家： | 
ONSEMI |
| 描述： | 600 V，3 A，短路额定 IGBT 双极性晶体管 |
| 文件： | 总12页 (文件大小：1146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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April 2013
FGD3N60UNDF
600 V, 3 A
Short Circuit Rated IGBT
Applications
•
Sewing Machine, CNC, Home Appliances, Motor Control
General Description
Features
®
Using advanced NPT IGBT technology, Fairchild ’s the NPT
IGBTs offer the optimum performance for low-power inverter-
driven applications where low-losses and short-circuit rugged-
ness features are essential.
•
•
•
•
•
Short Circuit Rated 10us
High Current Capability
High Input Impedance
Fast Switching
RoHS Compliant
Collector
C
G
JEDEC TO-252
D-Pak
E
Gate
Emitter
Absolute Maximum Ratings
Symbol
Description
Ratings
Unit
V
V
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
600
20
6
V
V
A
A
A
CES
GES
o
@ T = 25 C
C
I
C
o
Collector Current
@ T = 100 C
3
C
o
I
I
Pulsed Collector Current
9
CM (1)
@ T = 25 C
C
o
Diode Forward Current
@ T = 25 C
3
A
C
F
o
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
@ T = 25 C
60
W
W
C
P
D
o
@ T = 100 C
24
C
o
T
-55 to +150
-55 to +150
C
J
o
T
C
stg
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
o
T
300
C
L
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Typ.
Max.
2.08
5.0
Unit
o
R
R
R
(IGBT)
C/W
θJC
θJC
θJA
o
(Diode)
C/W
o
Thermal Resistance, Junction to Ambient (PCB Mount)(2)
150
C/W
Notes:
2: Mounted on 1” square PCB (FR4 or G-10 material)
©2012 Fairchild Semiconductor Corporation
FGD3N60UNDF Rev. C1
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
Device
Package
Rel Size
Tape Width
Quantity
FGD3N60UNDF
FGD3N60UNDF
TO252
330mm
16mm
2500 units
Electrical Characteristics of the IGBT
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV
Collector to Emitter Breakdown Voltage
V
= 0V, I = 250µA
600
-
-
-
-
V
CES
GE
C
∆BV
∆T
Breakdown Voltage Temperature
Coefficient
o
o
DSS
I
= 250µA, Referenced to 25 C
0.3
V/ C
D
J
I
I
Collector Cut-Off Current
G-E Leakage Current
V
V
= V
= V
, V = 0V
-
-
-
-
1
mA
uA
CES
GES
CE
GE
CES
GE
, V = 0V
±10
GES
CE
On Characteristics
V
G-E Threshold Voltage
I
I
I
= 3mA, V = V
GE
5.5
-
6.8
2.0
8.5
V
V
GE(th)
C
C
C
CE
= 3A
,
V
V
= 15V
2.52
GE
V
Collector to Emitter Saturation Voltage
CE(sat)
= 3A
,
= 15V,
GE
-
2.4
-
V
o
T
= 125 C
C
Dynamic Characteristics
C
C
C
Input Capacitance
-
-
-
165
28
pF
pF
pF
ies
V
= 30V V = 0V,
, GE
Output Capacitance
CE
oes
res
f = 1MHz
Reverse Transfer Capacitance
8.5
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Rise Time
-
-
-
-
-
-
-
-
-
-
-
-
-
-
5.5
1.8
22
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
d(on)
r
Turn-Off Delay Time
Fall Time
d(off)
f
V
R
= 400V, I = 3A,
C
CC
91
= 10Ω, V = 15V,
G
GE
o
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
52
on
off
Inductive Load, T = 25 C
C
30
82
ts
t
t
t
t
4.8
2.6
24
d(on)
r
Turn-Off Delay Time
Fall Time
d(off)
f
V
R
= 400V, I = 3A,
C
CC
122
65
= 10Ω, V = 15V,
G
GE
o
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
on
off
ts
Inductive Load, T = 125 C
C
44
109
V
= 350V,
CC
T
Short Circuit Withstand Time
R
T
= 100Ω, V = 15V,
= 150 C
10
us
sc
G
C
GE
o
©2012 Fairchild Semiconductor Corporation
FGD3N60UNDF Rev. C1
2
www.fairchildsemi.com
Electrical Characteristics of the IGBT
T = 25°C unless otherwise noted
C
Q
Q
Q
Total Gate Charge
-
-
-
1.6
6.6
-
-
-
nC
nC
nC
g
V
V
= 400V, I = 3A,
= 15V
CE
GE
C
Gate to Emitter Charge
Gate to Collector Charge
ge
gc
11.3
Electrical Characteristics of the Diode
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max Unit
o
T
T
T
T
= 25 C
-
-
-
-
-
-
1.7
1.6
21
31
23
49
2.2
C
C
C
C
C
C
V
Diode Forward Voltage
I = 3A
F
V
FM
o
= 125 C
-
o
= 25 C
-
t
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
ns
rr
o
= 125 C
-
I =3A, dI /dt = 200A/µs
F
F
o
T
T
= 25 C
-
Q
nC
rr
o
= 125 C
-
©2012 Fairchild Semiconductor Corporation
FGD3N60UNDF Rev. C1
3
www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
30
30
TC = 125oC
TC = 25oC
20V
17V
20V
25
25
17V
15V
15V
20
20
15
15
VGE = 12V
VGE = 12V
10
10
5
0
5
0
0
2
4
6
8
10
0
2
4
6
8
10
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer Characteristics
12
20
Common Emitter
VCE = 20V
TC = 25oC
Common Emitter
VGE = 15V
TC = 25oC
TC = 125oC
10
TC = 125oC
8
15
6
4
2
0
10
5
0
5
6
7
8
9
10
11
12
0
1
2
3
4
5
6
7
8
Gate-Emitter Voltage,VGE [V]
Collector-Emitter Voltage, VCE [V]
Figure 5. Saturation Voltage vs. Case
Figure 6. Saturation Voltage vs. VGE
Temperature at Variant Current Level
3.5
3.0
2.5
2.0
1.5
1.0
20
Common Emitter
VGE = 15V
Common Emitter
TC = 25oC
16
12
8
6A
6A
3A
3A
IC = 1.5A
IC = 1.5A
4
0
25
50
75
100
125
4
8
12
16
20
Collector-EmitterCase Temperature, TC [oC]
Gate-Emitter Voltage, VGE [V]
©2012 Fairchild Semiconductor Corporation
FGD3N60UNDF Rev. C1
4
www.fairchildsemi.com
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
Figure 8. Capacitance Characteristics
500
20
Common Emitter
VGE = 0V, f = 1MHz
Common Emitter
TC = 125oC
TC = 25oC
Cies
16
Coes
100
12
6A
Cres
3A
8
IC = 1.5A
4
10
0
4
8
12
16
20
30
1
10
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage, VGE [V]
Figure 9. Gate charge Characteristics
Figure 10. SOA Characteristics
10
15
10µs
Common Emitter
TC = 25oC
VCC = 100V
300V
100µs
12
9
1ms
200V
1
10 ms
DC
6
0.1
*Notes:
1. TC = 25oC
2. TJ = 150oC
3
3. Single Pulse
0.01
0
1
10
100
1000
0
2
4
6
8
10
12
Collector-Emitter Voltage, VCE [V]
Gate Charge, Qg [nC]
Figure 11. Turn-on Characteristics vs.
Gate Resistance
Figure 12. Turn-off Characteristics vs.
Gate Resistance
1000
20
Common Emitter
VCC = 400V, VGE = 15V
IC = 3A
TC = 25oC
10
TC = 125oC
td(on)
tf
100
tr
Common Emitter
VCC = 400V, VGE = 15V
td(off)
IC = 3A
TC = 25oC
TC = 125oC
10
1
0
10
20
30
40
50
0
10
20
30
40
50
Gate Resistance, RG
[Ω]
Gate Resistance, RG
[Ω]
©2012 Fairchild Semiconductor Corporation
FGD3N60UNDF Rev. C1
5
www.fairchildsemi.com
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Figure 14. Turn-off Characteristics vs.
Collector Current
Collector Current
10
1000
Common Emitter
VGE = 15V, RG = 10
td(on)
Ω
TC = 25oC
TC = 125oC
tr
tf
1
100
Common Emitter
VGE = 15V, RG = 10
TC = 25oC
Ω
td(off)
TC = 125oC
0.1
10
1
2
3
4
5
6
1
2
3
4
5
6
Collector Current, IC [A]
Collector Current, IC [A]
Figure 15. Switching Loss vs.
Gate Resistance
Figure 16. Switching Loss vs
CollectorCurrent
1000
1000
Common Emitter
VGE = 15V, RG = 10
Common Emitter
VCC = 400V, VGE = 15V
Ω
TC = 25oC
IC = 3A
TC = 25oC
TC = 125oC
TC = 125oC
Eon
100
100
Eon
Eoff
Eoff
10
10
1
2
3
4
5
6
0
10
20
30
40
50
Collector Current, IC [A]
Gate Resistance, RG
[Ω]
Figure 17. Turn off Switching
Figure 18. Forward Characteristics
SOA Characteristics
12
10
20
10
TC = 75oC
TJ = 125oC
TC = 25oC
TC = 75oC
TC = 125oC
Safe Operating Area
VGE = 15V, TC = 125oC
TC = 25oC
1
1
1
10
100
1000
0
1
2
3
4
Collector-Emitter Voltage, VCE [V]
Forward Voltage, VF [V]
©2012 Fairchild Semiconductor Corporation
FGD3N60UNDF Rev. C1
6
www.fairchildsemi.com
Typical Performance Characteristics
Figure 19. Reverse Recovery Current
Figure 20. Stored Charge
4
50
TC = 25oC
45
TC = 25oC
TC = 125oC
40
TC = 125oC
3
2
1
0
di/dt = 200A/uS
35
30
didt =100A/uS
didt = 200A/uS
25
20
15
10
5
di/dt =100A/uS
0
0
1
2
3
4
5
0
1
2
3
4
5
Forward Current, IF [A]
Forward Current, IF [A]
Figure 21. Reverse Recovery Time
50
45
40
didt =100A/uS
35
30
25
20
15
10
5
didt = 200A/uS
TC = 25oC
TC = 125oC
0
0
1
2
3
4
5
Forward Current, IF [A]
Figure 22. Transient Thermal Impedance of IGBT
3
1
0.5
0.2
0.1
0.05
0.1
0.02
0.01
PDM
t1
single pulse
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.01
1E-5
1E-4
1E-3
0.01
0.1
Rectangular Pulse Duration [sec]
©2012 Fairchild Semiconductor Corporation
FGD3N60UNDF Rev. C1
7
www.fairchildsemi.com
Typical Performance Characteristics
Figure 23. Transient Thermal Impedance of FRD
5
1
0.5
0.2
0.1
0.05
PDM
0.02
0.01
t1
t2
Duty Factor, D = t1/t2
0.1
single pulse
Peak Tj = Pdm x Zthjc + TC
1E-5
1E-4
1E-3
0.01
0.1
Rectangular Pulse Duration [sec]
©2012 Fairchild Semiconductor Corporation
FGD3N60UNDF Rev. C1
8
www.fairchildsemi.com
Mechanical Dimensions
D-PAK
©2012 Fairchild Semiconductor Corporation
FGD3N60UNDF Rev. C1
9
www.fairchildsemi.com
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Datasheet contains the design specifications for product development. Specifications
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Datasheet contains preliminary data; supplementary data will be published at a later
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Not In Production
Rev. I64
©2012 Fairchild Semiconductor Corporation
FGD3N60UNDF Rev. C1
10
www.fairchildsemi.com
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SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9135LG-T1-E3
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9135_11
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9136_11
Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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