FGH40N60SFDTU-F085 [ONSEMI]
600 V、40 A、2.3 V、TO-247高速场截止 IGBT;
| 型号： | FGH40N60SFDTU-F085 |
| 厂家： | 
ONSEMI |
| 描述： | 600 V、40 A、2.3 V、TO-247高速场截止 IGBT 双极性晶体管 |
| 文件： | 总9页 (文件大小：812K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT - Field Stop
600 V, 40 A
FGH40N60SFDTU,
FGH40N60SFDTU-F085
Description
Using Novel Field Stop IGBT Technology, ON Semiconductor’s
new series of Field Stop IGBTs offer the optimum performance for
Automotive Chargers, Inverter, and other applications where low
conduction and switching losses are essential.
www.onsemi.com
C
Features
• High Current Capability
• Low Saturation Voltage: V
• High Input Impedance
• Fast Switching
= 2.3 V @ I = 40 A
C
CE(sat)
G
E
• Qualified to Automotive Requirements of AEC−Q101
(FGH40N60SFDTU−F085)
• These Devices are Pb−Free and are RoHS Compliant
E
C
G
Applications
• Automotive Chargers, Converters, High Voltage Auxiliaries
• Inverters, PFC, UPS
COLLECTOR
(FLANGE)
TO−247−3LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FGH40N60
SFDTU
$Y&Z&3&K
FGH40N60
SFD
Automotive
Industrial
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
FGH40N60SFD,
FGH40N60SFDTU
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
FGH40N60SFDTU−F085/D
February, 2020 − Rev. 3
FGH40N60SFDTU, FGH40N60SFDTU−F085
ABSOLUTE MAXIMUM RATINGS
Description
Symbol
Ratings
Unit
V
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate−to−Emitter Voltage
Collector Current
V
CES
V
GES
600
20
V
30
80
V
TC = 25°C
TC = 100°C
TC = 25°C
TC = 25°C
TC = 100°C
I
A
C
40
A
Pulsed Collector Current
I
(Note 1)
120
A
CM
Maximum Power Dissipation
P
290
W
W
°C
°C
°C
D
116
Operating Junction Temperature
Storage Temperature Range
T
−55 to +150
−55 to +150
300
J
T
stg
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 Seconds
T
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: Pulse width limited by max. junction temperature.
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Symbol
Value
0.43
1.45
40
Unit
°C/W
°C/W
°C/W
R
R
(IGBT)
ꢀ
JC
JC
(Diode)
ꢀ
R
ꢀ
JA
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
TO−247
TO−247
Package Method
Tube
Reel Size
Tape Width
Quantity
FGH40N60SFDTU
FGH40N60SFD
−
−
−
−
30
30
FGH40N60SFDTU−F085* FGH40N60SFDTU
Tube
*Qualified to Automotive Requirements of AEC−Q101
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted)
C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector to Emitter Breakdown Voltage
BV
V
V
= 0 V, I = 250 ꢁ A
600
−
−
−
V
CES
GE
C
Temperature Coefficient of Breakdown
Voltage
ꢂ
B
V
/ꢂ T
= 0 V, I = 250 ꢁ A
−
0.6
V/°C
CES
J
GE
C
Collector Cut−Off Current
G−E Leakage Current
I
V
V
= V
= V
, V = 0 V
−
−
−
−
250
400
ꢁ
A
CES
CE
CES
GE
I
, V = 0 V
nA
GES
GE
GES
CE
ON CHARACTERISTICs
G−E Threshold Voltage
V
I
C
I
C
I
C
= 250 ꢁ A, V = V
GE
4.0
−
4.7
2.3
2.5
6.5
2.9
−
V
V
V
GE(th)
CE
Collector to Emitter Saturation Voltage
V
= 40 A, V = 15 V
GE
CE(sat)
= 40 A, V = 15 V, T = 125°C
−
GE
C
DYNAMIC CHARACTERISTICS
Input Capacitance
C
V
CE
= 30 V, V = 0 V, f = 1 MHz
−
−
−
1920
190
65
−
−
−
pF
pF
pF
ies
GE
Output Capacitance
C
oes
Reverse Transfer Capacitance
C
res
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2
FGH40N60SFDTU, FGH40N60SFDTU−F085
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted) (continued)
C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
V
= 400 V, I = 40 A,
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
21
35
−
−
−
54
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
ns
d(on)
CC
G
C
R
= 10 ꢃ ꢄ V = 15 V,
GE
Rise Time
t
r
Inductive Load, T = 25°C
C
Turn−Off Delay Time
Fall Time
t
138
18
ns
d(off)
t
f
ns
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Turn−On Delay Time
Rise Time
E
on
E
off
1.23
0.38
1.61
21
mJ
mJ
mJ
ns
E
ts
t
t
V
= 400 V, I = 40 A,
= 10 ꢃ ꢄ V = 15 V,
GE
d(on)
CC C
R
G
t
r
39
ns
Inductive Load, T = 125°C
C
Turn−Off Delay Time
Fall Time
144
48
ns
d(off)
t
f
ns
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
E
1.58
0.58
2.16
121
16
mJ
mJ
mJ
nC
nC
nC
on
off
E
E
ts
Q
V
= 400 V, I = 40 A, V = 15 V
g
CE C GE
Q
ge
gc
Q
68
ELECTRICAL CHARACTERISTICS OF THE DIODE (T = 25°C unless otherwise noted)
J
Parametr
Symbol
Test Conditions
Min
−
Typ
1.80
1.70
68
Max
2.6
−
Unit
Diode Forward Voltage
V
FM
I
= 20 A
T
C
T
C
T
C
T
C
T
C
T
C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
V
F
F
−
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
t
rr
I
= 20 A, di /dt = 200 A/ꢁ s
−
−
ns
F
−
240
160
840
−
Q
−
−
nC
rr
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
3
FGH40N60SFDTU, FGH40N60SFDTU−F085
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 2. Typical Output Characteristics
Figure 1. Typical Output Characteristics
Figure 4. Transfer Characteristics
Figure 3. Typical Saturation Voltage
Characteristics
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
Figure 6. Saturation Voltage vs. VGE
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4
FGH40N60SFDTU, FGH40N60SFDTU−F085
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Figure 7. Saturation Voltage vs. VGE
Figure 8. Saturation Voltage vs. VGE
Figure 10. Gate Charge Characteristics
Figure 9. Capacitance Characteristics
Figure 11. SOA Characteristics
Figure 12. Turn−on Characteristics vs. Gate
Resistance
www.onsemi.com
5
FGH40N60SFDTU, FGH40N60SFDTU−F085
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Figure 14. Turn−On Characteristics
Figure 13. Turn−Off Characteristics
vs. Collector Current
vs. Gate Resistance
Figure 16. Switching Loss vs. Gate
Resistance
Figure 15. Turn−Off Characteristics
vs. Collector Current
Figure 17. Switching Loss vs. Collector
Current
Figure 18. Turn−Off Switching SOA
Characteristics
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6
FGH40N60SFDTU, FGH40N60SFDTU−F085
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Figure 19. Forward Characteristics
Figure 20. Reverse Current
Figure 21. Stored Charge
Figure 22. Reverse Recovery Time
P
DM
t
1
t
2
Figure 23. Transient Thermal Impedance of IGBT
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
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and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
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