FGH40N60SMD-F085 [ONSEMI]
IGBT，场截止，600 V，40 A，1.9 V;
| 型号： | FGH40N60SMD-F085 |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，场截止，600 V，40 A，1.9 V 局域网 栅 双极性晶体管 功率控制 |
| 文件： | 总10页 (文件大小：371K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT - Field Stop
600 V, 40 A
FGH40N60SMD-F085
Description
Using Novel Field Stop IGBT Technology, ON Semiconductor’s
new series of Field Stop IGBTs offer the optimum performance for
Automotive Chargers, Inverter, and other applications where low
conduction and switching losses are essential.
www.onsemi.com
Features
C
• Maximum Junction Temperature: T = 175°C
J
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
G
E
E
• Low Saturation Voltage: V
• High Input Impedance
= 1.9 V(Typ.) @ I = 40 A
C
CE(sat)
• Tightened Parameter Distribution
• AEC Qualified and PPAP Capable
IGBT: AEC−Q101
• This Device is Pb−Free and is RoHS Compliant
C
G
Applications
• Automotive Chargers, Converters, High Voltage Auxiliaries
• Inverters, SMPS, PFC, UPS
ABSOLUTE MAXIMUM RATINGS
TO−247−3LD
CASE 340CK
Rating
Symbol
Ratings
600
Unit
V
Collector to Emitter Voltage
Gate to Emitter Voltage
V
CES
V
GES
20
V
MARKING DIAGRAM
Collector Current
@ TC = 25°C
I
C
A
80
40
@ TC = 100°C
$Y&Z&3&K
FGH40N60
SMD
Pulsed Collector Current
I
120
A
A
CM
(Note 1)
Diode Forward Current
@ TC = 25°C
I
F
40
20
@ TC = 100°C
Pulsed Diode Maximum Forward
Current
I
120
A
FM
(Note 1)
Maximum Power Dissipation
@ TC = 25°C
P
W
D
$Y
&Z
&3
&K
= ON Semiconductor Logo
349
174
= Assembly Plant Code
= Numeric Date Code
= Lot Code
@ TC = 100°C
Operating Junction Temperature
Storage Temperature Range
T
−55 to +175
−55 to +175
300
°C
°C
°C
J
FGH40N60SMD
= Specific Device Code
T
stg
Maximum Lead Temperature
for Soldering, 1/8″ from Case
for 5 Seconds
T
L
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Repetitive rating: Pulse width limited by max. junction temperature.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
FGH40N60SMD−F085/D
February, 2020 − Rev. 4
FGH40N60SMD−F085
THERMAL CHARACTERISTICS
Parameter
Symbol
R (Note 2)
ꢀ
JC
Ratings
0.43
1.8
Unit
°C/W
°C/W
Thermal Resistance Junction−to−Case, for IGBT
Thermal Resistance Junction−to−Case, for Diode
Parameter
R
ꢀ
JC
Symbol
Typ.
45
Thermal Resistance Junction−to−Ambient (PCB Mount) (Note 2)
R
°C/W
ꢀ
JA
2. R
for TO−247: according to Mil standard 883−1012 test method. R
for TO−247 : according to JESD51−2, test method environmental
JA
ꢀ
ꢀ
JC
condition and JESD51−10, test boards for through hole perimeter leaded package thermal measurements. JESD51−3 : Low Effective
Thermal Conductivity Test Board for Leaded Surface Mount Package.
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Package Type
Quantity
FGH40N60SMD
FGH40N60SMD−F085
TO−247−3
Tube
30 Units
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted)
C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector to Emitter Breakdown Voltage
BV
V
V
= 0 V, I = 250 ꢁ A
600
−
−
−
V
CES
GE
C
Temperature Coefficient of Breakdown
Voltage
ꢂ
B
V
/ꢂ T
= 0 V, I = 250 ꢁ A
−
0.6
V/°C
CES
J
GE
C
Collector Cut−Off Current
I
V
= V
, V = 0 V
−
−
−
−
−
−
250
800
400
ꢁ
A
CES
CE
CES
GE
I
at 80% * B
, 175°C
CES
VCES
G−E Leakage Current
I
V
GE
= V
, V = 0 V
CE
nA
GES
GES
ON CHARACTERISTICs
G−E Threshold Voltage
V
I
C
I
C
I
C
= 250 ꢁ A, V = V
GE
3.5
4.5
1.9
2.1
6.0
2.5
−
V
V
V
GE(th)
CE
Collector to Emitter Saturation Voltage
V
= 40 A, V = 15 V
−
CE(sat)
GE
= 40 A, V = 15 V, T = 175°C
−
GE
C
DYNAMIC CHARACTERISTICS
Input Capacitance
C
V
CE
= 30 V, V = 0 V, f = 1 MHz
−
−
−
1880
180
50
2500
240
65
pF
pF
pF
ies
GE
Output Capacitance
C
oes
Reverse Transfer Capacitance
C
res
SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
V
= 400 V, I = 40 A,
−
−
−
−
−
−
−
−
−
−
−
−
−
−
18
24
ns
ns
d(on)
CC
G
C
R
= 6 ꢃ ꢄ V = 15 V,
GE
Rise Time
t
r
28
36.4
143
18.5
1.2
Inductive Load, T = 25°C
C
Turn−Off Delay Time
Fall Time
t
110
13.2
0.92
0.3
ns
d(off)
t
f
ns
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Turn−On Delay Time
Rise Time
E
on
E
off
mJ
mJ
mJ
ns
0.39
1.59
23.8
35.1
151
81
E
ts
1.22
16.7
27
t
t
V
= 400 V, I = 40 A,
= 6 ꢃ ꢄ V = 15 V,
GE
d(on)
CC C
R
G
t
r
ns
Inductive Load, T = 175°C
C
Turn−Off Delay Time
Fall Time
116
56.5
1.47
0.73
2.20
ns
d(off)
t
f
ns
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
E
on
E
off
1.91
0.95
2.86
mJ
mJ
mJ
E
ts
www.onsemi.com
2
FGH40N60SMD−F085
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted) (continued)
C
Parameter
Total Gate Charge
Symbol
Test Conditions
= 400 V, I = 40 A, V = 15 V
Min
−
Typ
119
13
Max
180
20
Unit
nC
Q
V
CE
g
C
GE
Gate to Emitter Charge
Gate to Collector Charge
Q
ge
Q
gc
−
nC
−
58
90
nC
ELECTRICAL CHARACTERISTICS OF THE DIODE (T = 25°C unless otherwise noted)
J
Parametr
Symbol
Test Conditions
Min
−
Typ
2.3
Max
2.8
−
Unit
Diode Forward Voltage
V
FM
I = 20 A
T
C
T
C
T
C
T
C
T
C
T
C
T
C
= 25°C
V
F
= 175°C
= 175°C
= 25°C
−
1.67
48.9
36
Reverse Recovery Energy
E
rec
I = 20 A, di /dt = 200 A/ꢁ s
−
−
ꢁ
J
F
F
Diode Reverse Recovery Time
t
rr
−
47
−
ns
= 175°C
= 25°C
−
110
46.8
470
Diode Reverse Recovery Charge
Q
−
61
−
nC
rr
= 175°C
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
3
FGH40N60SMD−F085
TYPICAL CHARACTERISTICS
120
100
80
120
12 V
12 V
V
= 20 V
V
GE
= 20 V
15 V
GE
10 V
10 V
100
80
15 V
60
40
60
40
20
0
8 V
8 V
6
20
0
T
C
= 175°C
T
C
= 25°C
4
6
8
10
0
2
4
8
10
2
0
Collector−Emitter Voltage, V [V]
Collector−Emitter Voltage, V [V]
CE
CE
Figure 2. Typical Output Characteristics
Figure 1. Typical Output Characteristics
120
120
Common Emitter
100
80
V
= 20 V
100
80
60
40
20
0
CE
T
T
= 25°C
C
C
= 175°C
60
40
Common Emitter
V
= 15 V
GE
20
0
T
T
= 25°C
C
C
= 175°C
4
5
1
2
3
0
0
2
4
6
8
10
12
Collector−Emitter Voltage, V [V]
Gate−Emitter Voltage, V [V]
CE
GE
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer Characteristics
3
20
16
12
8
Common Emitter
GE
Common Emitter
C
V
= 15 V
T
= −40°C
80 A
40 A
80 A
40 A
2
1
I
= 20 A
C
4
I
C
= 20 A
125
0
16
8
12
20
4
100
150
175
25
50
75
Gate−Emitter Voltage, V [V]
GE
Collector−Emitter Case Temperature, T [°C]
C
Figure 6. Saturation Voltage vs. VGE
Figure 5. Saturation Voltage vs. Case Temperature
at Variant Current Level
www.onsemi.com
4
FGH40N60SMD−F085
TYPICAL CHARACTERISTICS
20
16
12
8
20
Common Emitter
= 25°C
Common Emitter
C
T
C
T
= 175°C
14
12
80 A
80 A
40 A
40 A
8
4
0
I
= 20 A
C
4
I
= 20 A
C
0
20
20
8
12
16
4
8
12
16
4
Gate−Emitter Voltage, V [V]
Gate−Emitter Voltage, V [V]
GE
GE
Figure 8. Saturation Voltage vs. VGE
Figure 7. Saturation Voltage vs. VGE
4000
1000
15
12
C
ies
V
CC
= 200 V
400 V
9
6
C
300 V
oes
C
res
Common Emitter
V
T
= 0 V, f = 1 MHz
3
0
GE
C
100
50
= 25°C
Common Emitter
= 25°C
T
C
30
1
10
Collector−Emitter Voltage, V [V]
120
0
100
50
Gate Charge, Q [nC]
CE
g
Figure 9. Capacitance Characteristics
Figure 10. Gate Charge Characteristics
100
300
t
r
100
10 ꢁ s
100 ꢁ s
1 ms
DC
t
d(on)
10
1
10 ms
10
Common Emitter
= 400 V, V = 15 V
V
C
CC
GE
*Notes:
I
= 40 A
1. T = 25°C
C
J
T
C
T
C
= 25°C
= 175°C
2. T ≤ 175°C
3. Single Pulse
0.1
1
50
30
40
10
20
0
1
10
100
1000
Gate Resistance, R [ꢃ]
Collector−Emitter Voltage, V [V]
G
CE
Figure 12. Turn−on Characteristics vs. Gate
Figure 11. SOA Characteristics
Resistance
www.onsemi.com
5
FGH40N60SMD−F085
TYPICAL CHARACTERISTICS
100
10000
1000
100
Common Emitter
= 400 V, V = 15 V
V
CC
GE
t
r
I
= 40 A
C
T
C
T
C
= 25°C
= 175°C
t
d(off)
t
d(on)
10
Common Emitter
t
f
V
= 15 V, R = 6 ꢃ
GE
G
T
C
T
C
= 25°C
= 175°C
1
20
10
50
0
10
20
30
40
40
60
80
Gate Resistance, R [ꢃ]
Collector Current, I [A]
G
C
Figure 14. Turn−on Characteristics vs.
Figure 13. Turn−off Characteristics vs. Gate
Collector Current
Resistance
1000
100
Common Emitter
V
C
= 400 V, V = 15 V
CC
GE
I
= 40 A
t
d(off)
T
C
T
C
= 25°C
= 175°C
100
10
1
10
1
t
f
E
on
Common Emitter
GE
V
= 15 V, R = 6 ꢃ
G
E
off
T
C
T
C
= 25°C
= 175°C
0.1
20
40
60
80
50
0
10
20
30
40
Collector Current, I [A]
C
Gate Resistance, R [ꢃ]
G
Figure 15. Turn−off Characteristics vs.
Figure 16. Switching Loss vs. Gate
Resistance
Collector Current
10
200
100
Common Emitter
V
T
= 15 V, R = 6 ꢃ
GE
G
E
on
= 25°C
C
C
T
= 175°C
1
10
1
E
off
Safe Operating Area
V
= 15 V, T ≤ 175°C
GE
C
0.1
20
40
60
80
1
Collector Current, I [A]
Collector−Emitter Voltage, V [V]
C
CE
Figure 17. Switching Loss vs. Collector
Current
Figure 18. Turn−off Switching SOA
Characteristics
www.onsemi.com
6
FGH40N60SMD−F085
TYPICAL CHARACTERISTICS
120
110
100
90
90
80
70
60
50
40
30
20
10
0
Square Wave
T ≤ 175°C, D = 0.5, V = 400 V
J
V
CE
= 15/0 V, R = 6 ꢃ
GE
G
80
T
C
= 75°C
70
60
T
C
= 100°C
50
40
30
20
10
0
0
25
50
75 100 125 150 175
1k
10k
100k
1M
Collector−Emitter Case Temperature, T [°C]
Switching Frequency, f [Hz]
C
Figure 20. Load Current vs. Frequency
Figure 19. Current Derating
1000
100
10
100
10
1
T
= 175°C
C
T
C
= 175°C
T
= 100°C
C
1
T
C
= 25°C
0.1
T
= 25°C
C
0.01
0
1
2
3
0
200
400
600
Collector to Emitter Voltage, V
[V]
Forward Voltage, V [V]
CES
F
Figure 22. Reverse Current
Figure 21. Forward Characteristics
200
150
100
50
600
500
400
300
200
100
0
T
C
T
C
= 25°C
= 175°C
T
T
= 25°C
C
di/dt = 100 A/ꢁ s
= 175°C
C
200 A/ꢁ s
di/dt = 200 A/ꢁ s
di/dt = 100 A/ꢁ s
di/dt = 100 A/ꢁ s
200 A/ꢁ s
0
0
10 15
5
20 25 30 35 40 45
0
5
10 15 20 25 30 35 40 45
Forward Current, I [A]
Forward Current, I [A]
F
F
Figure 24. Reverse Recovery Time
Figure 23. Stored Charge
www.onsemi.com
7
FGH40N60SMD−F085
0.5
0.1
0.5
0.2
0.1
0.05
0.02
0.01
0.01
P
DM
Single Pulse
t
1
t
2
Duty Factor, D = t1/t2
Peak T = Pdm x Zꢀ jc + T
J
C
1E−3
1E−5
1E−4
1E−3
0.01
0.1
Rectangular Pulse Duration [sec]
Figure 25. Transient Thermal Impedance of IGBT
2
1
0.5
0.2
0.1
0.05
0.1
P
DM
0.02
0.01
t
1
t
2
Duty Factor, D = t1/t2
Peak T = Pdm x Zꢀ jc + T
ulse
single p
J
C
0.01
1E−5
1E−4
1E−3
0.01
0.1
1
Rectangular Pulse Duration [sec]
Figure 26. Transient Thermal Impedance of Diode
www.onsemi.com
8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
SI9130DB
5- and 3.3-V Step-Down Synchronous ConvertersWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1-E3
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135_11
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9136_11
Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
©2020 ICPDF网 联系我们和版权申明