FGH4L50T65MQDC50 [ONSEMI]
650V Field stop 4th generation mid speed IGBT with co-pack SiC diode;
| 型号： | FGH4L50T65MQDC50 |
| 厂家： | 
ONSEMI |
| 描述： | 650V Field stop 4th generation mid speed IGBT with co-pack SiC diode 双极性晶体管 |
| 文件： | 总9页 (文件大小：308K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
IGBT - Power, Co-PAK
N-Channel, Field Stop IV, MQ
(Medium Speed), TO247-4L
650 V, 1.45 V, 50 A
BV
V
I
C
CES
CE(sat)
650 V
1.45 V
50 A
PIN CONNECTIONS
C
FGH4L50T65MQDC50
E1: Kelvin Emitter
E2: Power Emitter
Using the novel field stop 4th generation IGBT technology and
generation 1.5 SiC Schottky Diode technology in TO−247 4−lead
package, FGH4L50T65MQDC50 offers the optimum performance
with both low conduction and switching losses for high−efficiency
operations in various applications, especially totem pole bridgeless
PFC and Inverter.
G
E1
E2
Features
• Positive Temperature Coefficient for Easy Parallel Operation
• High Current Capability
• 100% of the Parts are Tested for I (Note 2)
LM
• Smooth and Optimized Switching
• Low Saturation Voltage: V
= 1.45 V (Typ.) @ I = 50 A
C
CE(Sat)
TO−247−4LD
CASE 340CJ
• No Reverse Recovery / No Forward Recovery
• Tight Parameter Distribution
• RoHS Compliant
MARKING DIAGRAM
Applications
• Charging Station (EVSE)
• UPS, ESS
• Solar Inverter
• PFC, Converters
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Collector−to−Emitter Voltage
Gate−to−Emitter Voltage
Symbol Value
Unit
$Y&Z&3&K
G50T65
MQDC50
V
V
V
650
20
CES
GES
Transient Gate−to−Emitter Voltage
p
30
(t < 0.5 ms, D < 0.001)
Collector Current
I
A
W
A
T
= 25°C (Note 1)
100
50
C
C
T
= 100°C
= 25°C
C
Power Dissipation
P
D
T
246
123
200
200
60
C
T
C
= 100°C
$Y
= onsemi Logo
Pulsed Collector Current
Diode Forward Current
T
T
= 25°C (Note 2)
= 25°C (Note 3)
25°C (Note 1)
I
LM
C
&Z
&3
&K
= Assembly Plant Code
= 3−Digit Date Code
= 2−Digit Lot Traceability Code
I
C
CM
I
A
T
F
C =
G50T65MQDC50 = Specific Device Code
T
100°C
25°C
50
C =
Pulsed Diode Maximum
Forward Current
T
I
200
A
C =
FM
ORDERING INFORMATION
Operating Junction and Storage Temperature
Range
T ,
STG
−55 to
°C
°C
J
T
+175
Device
Package
Shipping
Maximum Lead Temp. for Soldering
Purposes (1/8″ from case for 5 s)
T
L
260
FGH4L50T65MQDC50 TO−247 30 Units / Tube
−4LD
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Value limit by bond wire
2. V = 400 V, V = 15 V, I = 200 A, Inductive Load, 100% tested
CC
GE
C
3. Repetitive rating: pulse width limited by max. junction temperature
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
FGH4L50T65MQDC50/D
October, 2022 − Rev. 1
FGH4L50T65MQDC50
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.61
0.70
40
Unit
Thermal Resistance Junction−to−Case, for IGBT
Thermal Resistance Junction−to−Case, for Diode
Thermal Resistance junction−to−Ambient
R
°C/W
q
JC
R
q
JCD
R
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−emitter Breakdown Voltage,
Gate−emitter Short−circuited
V
V
= 0 V, I = 1 mA
BV
CES
650
−
−
−
V
GE
C
Temperature Coefficient of Breakdown
Voltage
= 0 V, I = 1 mA
−
0.5
V/°C
GE
C
DBV
CES
DT
J
Collector−emitter Cut−off Current,
Gate−emitter Short−circuited
V
= 0 V, V = 650 V
I
−
−
−
−
250
400
mA
GE
CE
CES
Gate Leakage Current, Collector−emitter
Short−circuited
V
= 20 V, V = 0 V
I
nA
GE
CE
GES
ON CHARACTERISTICS
Gate−emitter Threshold Voltage
Collector−emitter Saturation Voltage
V
= V , I = 50 mA
V
GE(th)
3.0
−
4.5
6.0
1.8
−
V
V
GE
CE
C
V
= 15 V, I = 50 A, T = 25°C
V
CE(sat)
1.45
1.65
GE
C
J
V
GE
= 15 V, I = 50 A, T = 175°C
−
C
J
DYNAMIC CHARACTERISTICS
Input Capacitance
V
= 30 V, V = 0 V, f = 1 MHz
C
−
−
−
−
−
−
3340
630
10
−
−
−
−
−
−
pF
nC
CE
GE
ies
Output Capacitance
C
oes
Reverse Transfer Capacitance
Gate Charge Total
C
res
V
CE
= 400 V, I = 50 A, V = 15 V
Q
102
19
C
GE
g
Gate−to−emitter Charge
Gate−to−collector Charge
Q
Q
ge
gc
25
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Turn−on Delay Time
Rise Time
T = 25°C, V = 400 V,
t
d(on)
−
−
−
−
−
−
−
−
−
−
−
−
−
−
27
10
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
J
I
CC
= 25 A, R = 15 W,
C
GE
G
t
r
V
= 15 V, Inductive Load
Turn−off Delay Time
Fall Time
t
181
21
d(off)
t
f
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
Turn−on Delay Time
Rise Time
E
on
E
off
0.24
0.31
0.55
29
mJ
ns
E
ts
T = 25°C, V = 400 V,
t
t
J
C
GE
CC
G
d(on)
I
= 50 A, R = 15 W,
t
r
21
V
= 15 V, Inductive Load
Turn−off Delay Time
Fall Time
173
18
d(off)
t
f
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
E
0.54
0.59
1.13
mJ
on
off
E
E
ts
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2
FGH4L50T65MQDC50
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Turn−on Delay Time
Rise Time
T = 175°C, V = 400 V,
t
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
24
11
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
J
I
CC
d(on)
= 25 A, R = 15 W,
C
GE
G
t
r
V
= 15 V, Inductive Load
Turn−off Delay Time
Fall Time
197
24
d(off)
t
f
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
Turn−on Delay Time
Rise Time
E
on
E
off
0.31
0.51
0.82
26
mJ
ns
E
ts
T = 175°C, V = 400 V,
t
t
J
CC
G
d(on)
I
= 50 A, R = 15 W,
C
t
r
27
V
= 15 V, Inductive Load
GE
Turn−off Delay Time
Fall Time
186
26
d(off)
t
f
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
DIODE CHARACTERISTICS
Diode Forward Voltage
E
on
E
off
0.74
0.97
1.71
mJ
E
ts
I = 50 A, T = 25°C
V
F
−
−
−
−
1.46
1.83
210
202
1.7
−
V
F
J
I = 50 A, T = 175°C
F
J
Total Capacitance
V
V
= 400 V, f = 1 MHz, T = 25°C
C
−
pF
R
J
= 600 V, f = 1 MHz, T = 25°C
−
R
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
FGH4L50T65MQDC50
TYPICAL CHARACTERISTICS
200
175
150
125
100
75
200
20 V
10 V
20 V
10 V
T = 25°C
T = 175°C
V
GE
= 8 V
J
J
175
150
125
100
75
15 V
12 V
15 V
12 V
V
GE
= 8 V
50
50
25
0
25
0
0
1
2
3
4
5
0
1
2
3
4
5
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
200
175
150
125
100
75
200
175
150
125
100
75
T = 25°C
J
T = 175°C
J
Common Emitter
V
CE
= 20 V
50
50
V
= 15 V
25
0
25
0
GE
T = 175°C
J
T = 25°C
J
0
2
4
6
8
10
0
1
2
3
4
5
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
GE
, GATE−EMITTER VOLTAGE (V)
Figure 3. Typical Output Characteristics
Figure 4. Transfer Characteristics
2.5
2.0
10000
1000
100
C
iss
Common Emitter
V
GE
= 15 V
I
C
= 100 A
C
oss
I
I
= 50 A
= 25 A
C
1.5
1.0
C
rss
10
1
C
V
= 0 V
GE
f = 1 MHz
−100
−50
0
50
100
150
200
0.1
1
10
30
T , COLLECTOR−EMITTER JUNCTION TEMPERATURE (°C)
J
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. Saturation Voltage vs. Junction
Temperature at Variant Current Level
Figure 6. Capacitance Variation
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4
FGH4L50T65MQDC50
TYPICAL CHARACTERISTICS
15
12
9
1000
V
= 200 V
CC
Common Emitter
= 50 A
I
C
100
10
10 ms
V
CC
= 400 V
100 ms
V
= 300 V
CC
6
*Notes:
1. T = 25°C
10 ms
1 ms
DC
1
C
3
0
2. T = 175°C
J
3. Single Pulse
0.1
0
0
0
20
40
60
80
100
1
0
0
10
100
1000
Q , GATE CHARGE (nC)
V
, COLLECTOR−EMITTER VOLTAGE (V)
G
CE
Figure 7. Gate Charge Characteristics
Figure 8. SOA Characteristics
100
1000
Common Emitter
Common Emitter
V
V
I
= 400 V
= 15 V
= 50 A
V
V
I
= 400 V
= 15 V
= 50 A
CC
GE
CC
GE
t
d(on)
C
C
t
d(off)
T = 25°C
J
100
10
T = 175°C
J
t
r
t
T = 25°C
f
J
T = 175°C
J
10
10
20
30
40
50
10
20
30
40
50
R , GATE RESISTANCE (W)
G
R , GATE RESISTANCE (W)
G
Figure 9. Turn−On Characteristics vs. Gate
Figure 10. Turn−Off Characteristics vs. Gate
Resistance
Resistance
1000
100
1000
Common Emitter
Common Emitter
V
V
= 400 V
= 15 V
= 15 W
V
V
= 400 V
= 15 V
CC
CC
GE
GE
R
R
= 15 W
t
G
G
d(off)
100
10
t
r
T = 25°C
J
T = 175°C
J
10
1
t
t
f
d(on)
T = 25°C
J
T = 175°C
J
30
60
90
120
150
30
60
90
120
150
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 11. Turn−on Characteristics vs.
Figure 12. Turn−off Characteristics vs.
Collector Current
Collector Current
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5
FGH4L50T65MQDC50
TYPICAL CHARACTERISTICS
10
10
Common Emitter
Common Emitter
E
off
V
V
= 400 V
= 15 V
= 50 A
V
V
= 400 V
= 15 V
CC
CC
GE
GE
E
off
I
C
I = 50 A
C
R
= 15 W
G
1
1
E
on
E
on
T = 25°C
T = 175°C
J
T = 25°C
T = 175°C
J
J
J
0.1
0.1
0
10
20
30
40
50
0
30
60
90
120
150
R , GATE RESISTANCE (W)
G
I , COLLECTOR CURRENT (A)
C
Figure 13. Switching Loss vs. Gate Resistance
Figure 14. Switching Loss vs. Collector
Current
200
175
150
125
100
75
10,000
1000
T = 25°C
J
T = 175°C
J
100
10
Common Emitter
= 0 V
V
GE
50
f = 1 MHz
= 25°C
25
0
T
C
0
1
2
3
4
5
0
1
10
100
650
V , FORWARD VOLTAGE (V)
F
V , REVERSE VOLTAGE (V)
R
Figure 15. Forward Diode Characteristics
Figure 16. (Diode) Output Capacitance (Coes)
vs. Reverse Voltage
50
40
30
20
10
0
0
100
200
300
400
500
600
V , REVERSE VOLTAGE (V)
R
Figure 17. Output Capacitance Stored Energy
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6
FGH4L50T65MQDC50
TYPICAL CHARACTERISTICS
1
0.5 Duty Cycle
Duty Factor, D = t /t
1
2
0.2
0.1
0.05
P
i:
DM
Peak T = P
x Z
+ T
q
J
DM
JC C
0.1
R
R
2
1
t
1
t
2
0.02
C = t / R
C = t / R
2 2 2
1
1
1
0.01
0.01
1
2
3
4
ri [K/W]: 0.0111
0.0951
0.0879
0.1143
T [s]:
1.09E−05 8.96E−05 5.78E−04 2.801E−3
Single Pulse
0.001
−6
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
10
10
RECTANGULAR PULSE DURATION (sec)
Figure 18. Transient Thermal Impedance of IGBT
1
0.5 Duty Cycle
Duty Factor, D = t /t
0.2
0.1
0.05
1
2
P
i:
DM
Peak T = P
x Z
+ T
q
J
DM
JC C
0.1
R
R
2
1
t
1
0.02
t
2
0.01
C = t / R
C = t / R
2 2 2
1
1
1
0.01
Single Pulse
1
2
3
4
ri [K/W]: 0.0408
0.1009
0.1009
0.1819
T [s]:
7.15E−06 1.62E−04 3.40E−04 2.94E−03
0.001
−6
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
10
10
RECTANGULAR PULSE DURATION (sec)
Figure 19. Transient Thermal Impedance of Diode
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−4LD
CASE 340CJ
ISSUE A
DATE 16 SEP 2019
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13852G
TO−247−4LD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
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onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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