FGH50N3 [ONSEMI]
IGBT，300 V，SMPS;
| 型号： | FGH50N3 |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，300 V，SMPS 局域网 栅 瞄准线 双极性晶体管 功率控制 |
| 文件： | 总9页 (文件大小：350K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT - SMPS
300 V
FGH50N3
Description
Using ON Semiconductor’s planar technology, this IGBT is ideal
for many high voltage switching applications operating at high
frequencies where low conduction losses are essential. This device has
been optimized for medium frequency switch mode power supplies.
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Features
C
• Low Saturation Voltage: V
= 1.4 V Max
CE(sat)
• Low E
= 6.6 uJ/A
OFF
• SCWT = 8 ꢀ s @ = 125°C
• 300 V Switching SOA Capability
• Positive Temperature Coefficient above 50 A
• This is a Pb−Free Device
G
E
Applications
• SMPS
E
C
G
COLLECTOR
(FLANGE)
TO−247−3LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FGH50N3
$Y
= ON Semiconductor Logo
&Z
&3
&K
= Assembly Plant Code
= Numeric Date Code
= Lot Code
FGH50N3
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
February, 2020 − Rev. 3
FGH50N3/D
FGH50N3
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Parameter
Collector to Emitter Breakdown Voltage
Collector Current Continuous
Symbol
Ratings
Unit
V
BV
I
300
CES
C
TC = 25°C
TC = 110°C
75
A
75
A
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
I
240
A
CM
V
GES
GEM
20
V
V
30
V
Switching Safe Operating Area at T = 150°C, Figure 2
SSOA
150 A at 300 V
J
Single Pulse Avalanche Energy, I = 30 A, L = 1.78 mH, V = 50 V
E
AS
800
800
mJ
mJ
W
CE
DD
Single Pulse Reverse Avalanche Energy, I = 30 A, L = 1.78 mH, V = 50 V
E
ARV
EC
DD
Power Dissipation Total
TC = 25°C
P
D
463
Power Dissipation Derating
TC > 25°C
3.7
W/°C
°C
Operating Junction Temperature Range
Storage Temperature Range Range
Short Circuit Withstand Time (Note 2)
T
−55 to +150
−55 to +150
8
J
T
°C
STG
t
ꢀ
s
SC
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Pulse width limited by maximum junction temperature.
2. V
= 180 V, T = 125°C, V = 12 Vdc, R = 5 ꢁ
CE(PK)
J GE G
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Tape Width
Quantity
FGH50N3
FGH50N3
TO−247
N/A
30
THERMAL CHARACTERISTICS
Parameter
Symbol
Test Conditions
Min
Typ
Max
0.27
Unit
Thermal Resistance, Junction−Case
R
TO−247
−
−
°C/W
ꢂ
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF STATE CHARACTERISTICS
Collector to Emitter Breakdown Voltage
BV
BV
I
I
I
= 250 ꢀ A, V = 0 V,
300
15
−
−
−
−
−
−
−
V
V
CES
CE
GE
Emitter to Collector Breakdown Voltage
= 10 mA, V = 0 V
−
ECS
EC
GE
Collector to Emitter Leakage Current
V
= 300 V
T = 25°C
250
2.0
250
ꢀ A
mA
nA
CES
CE
GE
J
T = 125°C
J
−
Gate to Emitter Leakage Current
I
V
=
20 V
−
GES
ON STATE CHARACTERISTICs
Collector to Emitter Saturation Voltage
V
I
I
= 30 A, V = 15 V
T = 25°C
−
−
1.30
1.25
1.4
1.4
V
V
CE(SAT)
CE
GE
J
T = 125°C
J
DYNAMIC CHARACTERISTICS
Gate Charge
Q
= 30 A, V = 150 V
V
V
= 15 V
= 20 V
−
−
180
228
4.8
7.0
−
−
nC
nC
V
G(ON)
CE
CE
GE
GE
Gate to Emitter Threshold Voltage
Gate to Emitter Plateau Voltage
V
I
I
= 250 ꢀ A, V = V
GE
4.0
−
5.5
−
GE(TH)
CE
CE
V
GEP
= 30 A, V = 150 V
V
CE
CE
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2
FGH50N3
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS
Switching SOA
SSOA
T = 150°C, R = 5 ꢁ ꢃ V = 15 V,
150
−
−
A
J
G
GE
L = 25 ꢀ H, V = 300 V
CE
Current Turn−On Delay Time
Current Rise Time
t
IGBT and Diode at T = 25°C,
−
−
−
−
−
−
−
−
−
−
−
−
20
15
−
−
ns
ns
ns
ns
ꢀ J
ꢀ J
ns
ns
ns
ns
ꢀ J
ꢀ J
d(ON)I
J
I
= 30 A,
CE
t
rI
d(OFF)I
V
V
= 180 V,
= 15 V,
CE
GE
G
Current Turn−Off Delay Time
Current Fall Time
t
135
12
−
R
= 5 ꢁ ꢃ ,
L = 100 ꢀ H,
t
fI
−
Test Circuit − Figure 20
Turn−On Energy (Note 3)
Turn−Off Energy Loss (Note 4)
Current Turn−On Delay Time
Current Rise Time
E
E
130
92
−
ON2
OFF
120
−
t
IGBT and Diode at T = 125°C,
19
d(ON)I
J
I
= 30 A,
CE
t
13
−
rI
d(OFF)I
V
V
= 180 V,
= 15 V,
CE
GE
G
Current Turn−Off Delay Time
Current Fall Time
t
155
7
190
15
270
200
R
= 5 ꢁ ꢃ ,
L = 100 ꢀ H,
t
fI
Test Circuit − Figure 20
Turn−On Energy (Note 3)
Turn−Off Energy (Note 4)
E
E
225
135
ON2
OFF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. E
is the turn−on loss when a typical diode is used in the test circuit and the diode is at the same T as the IGBT. The diode type is specified
ON2
in Figure 20.
J
4. Turn−Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
OFF
ending at the point where the collector current equals zero (I = 0 A). All devices were tested per JEDEC Standard No. 24−1 Method for
CE
Measurement of Power Device Turn−Off Switching Loss. This test method produces the true total Turn−Off Energy Loss.
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3
FGH50N3
TYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise noted)
J
200
160
120
80
175
V
GE
= 15 V
T = 150°C, R = 5 ꢁ, V = 15 V, L = 25 ꢀ H
J
G
GE
150
125
100
75
Package Limited
50
40
25
0
0
50
75
100
300 350
, Collector to Emitter Voltage (V)
25
125
150
100
150 200 250
0
50
T , Case Temperature (°C)
V
C
CE
Figure 2. Minimum Switching Safe Operating
Area
Figure 1. DC Collector Current vs. Case
Temperature
30
25
20
15
10
5
800
700
600
500
400
300
200
500
T = 125°C, R = 5 ꢁ,
V
CE
= 180 V, R = 5 ꢁ, T = 125°C
J
G
G
J
400
L = 100 ꢀ H, V = 180 V, T = 75°C
CE
C
V
GE
= 15 V
300
I
sc
t
sc
200
V
GE
= 10 V
f
f
= 0.05 / (t
+ t
)
MAX1
MAX2
d(OFF)I
C
d(ON)I
= (P − P ) / (E
+ E
)
100
60
D
ON2
OFF
P
= Conduction Dissipation
(Duty Factor = 50%)
C
R
= 0.27°C/W, See Notes
ꢂ
JC
0
9
10
11
12
13
14
15
16
10
20
2
200
V
GE
, Gate to Emitter Voltage (V)
I
, Collector to Emitter Current (A)
CE
Figure 4. Short Circuit Withstand Time
Figure 3. Operating Frequency vs. Collector
to Emitter Current
60
50
40
30
20
10
0
60
Duty Cycle < 0.5%, V = 10 V
Duty Cycle < 0.5%, V = 15 V
GE
GE
Pulse Duration = 250 ꢀ s
Pulse Duration = 250 ꢀ s
50
40
30
20
10
0
T = 25°C
J
T = 25°C
J
T = 150°C
J
T = 150°C
J
T = 125°C
J
T = 125°C
J
1.75
1.25 1.5 1.75 2.0
0.25
0.5
V
0.75
1.0
1.25
1.5
0.25 0.5
0.75 1.0
V
CE
, Collector to Emitter Voltage (V)
, Collector to Emitter Voltage (V)
CE
Figure 5. Collector to Emitter On−State
Figure 6. Collector to Emitter On−State
Voltage
Voltage
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4
FGH50N3
TYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise noted) (continued)
J
400
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
R
= 5 ꢁ, L = 100 ꢀ H, V = 180 V
CE
G
R
= 5 ꢁ, L = 100 ꢀ H, V = 180 V
CE
G
350
300
250
200
150
100
50
T = 125°C, V = 10 V, V = 15 V
J
GE
GE
T = 25°C, T = 125°C, V = 10 V
J
J
GE
T = 25°C
J
T = 25°C, V = 10 V, V = 15 V
T = 125°C, V = 15 V
J
GE
GE
J
GE
0
60
10
I
20
30
40
50
0
10
I
0
20
30
40
50
60
, Collector to Emitter Current (A)
, Collector to Emitter Current (A)
CE
CE
Figure 8. Turn−Off Energy Loss vs. Collector
Figure 7. Turn−On Energy Loss vs. Collector
to Emitter Current
to Emitter Current
100
80
60
40
20
0
35
R
= 5 ꢁ, L = 100 ꢀ H, V = 180 V
CE
G
R
= 5 ꢁ, L = 100 ꢀ H, V = 180 V
CE
G
30
25
20
15
T = 25°C, T = 125°C, V = 10 V
J J GE
T = 25°C, T = 125°C, V = 10 V
J
J
GE
T = 25°C, T = 125°C, V = 15 V
J
J
GE
T = 25°C, T = 125°C, V = 15 V
J
J
GE
60
0
10
I
20
30
40
50
60
0
10
I
20
30
40
50
, Collector to Emitter Current (A)
, Collector to Emitter Current (A)
CE
CE
Figure 10. Turn−On Rise Time vs. Collector
Figure 9. Turn−On Delay Time vs. Collector
to Emitter Current
to Emitter Current
170
160
150
140
130
120
110
100
24
20
16
12
8
R
= 5 ꢁ, L = 100 ꢀ H, V = 180 V
CE
R
= 5 ꢁ, L = 100 ꢀ H, V = 180 V
CE
G
G
T = 25°C, V = 10 V, 15 V
J
GE
T = 25°C, T = 125°C, V = 15 V
J
J
GE
4
T = 125°C, V = 10 V, 15 V
J
GE
T = 25°C, T = 125°C, V = 10 V
J
J
GE
0
40
50
60
0
10
I
20
30
10
I
20
30
40
50
60
0
, Collector to Emitter Current (A)
, Collector to Emitter Current (A)
CE
CE
Figure 12. Fall Time vs. Collector to Emitter
Current
Figure 11. Turn−Off Delay Time vs. Collector
to Emitter Current
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5
FGH50N3
TYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise noted) (continued)
J
250
200
150
100
50
16
Duty Cycle < 0.5%, V = 10 V
I
= 1 mA, R = 5 ꢁ, T = 25°C
CE
G(REF)
L
J
14
12
10
8
Pulse Duration = 250 ꢀ s
V
= 300 V
CE
T = 25°C
J
6
V
CE
= 200 V
T = 125°C
J
4
V
CE
= 100 V
2
T = −55°C
J
0
0
10
, Gate to Emitter Voltage (V)
11
8
9
5
6
7
25 50
75 100 125 150 175 200
0
V
GE
Q , Gate Charge (nC)
G
Figure 14. Gate Charge
Figure 13. Transfer Characteristics
1.2
1.0
0.8
0.6
0.4
0.2
0
40
10
R
= 5 ꢁ, L = 100 ꢀ H, V = 180 V,
CE
G
T = 125°C, L = 100 ꢀ H, V = 180 V,
J
V
CE
V
E
= 15 V
GE
TOTAL
= 15 V
GE
TOTAL
= E
+ E
OFF
ON2
E
= E + E
ON2 OFF
I
= 60 A
CE
I
= 60 A
= 30 A
= 15 A
CE
I
= 30 A
= 15 A
CE
1
I
CE
I
CE
I
CE
0.1
100
T , Case Temperature (°C)
50
75
125
150
25
1
10
R , Gate Resistance (ꢁ)
1000
100
G
C
Figure 16. Total Switching Loss vs. Gate
Resistance
Figure 15. Total Switching Loss vs. Case
Temperature
10
3.5
3.0
2.5
2.0
1.5
1.0
Frequency = 1 MHz
Duty Cycle < 0.5%
Pulse Duration = 250 ꢀ s, T = 25°C
J
C
IES
I
= 60 A
CE
1.0
C
OES
I
= 30 A
CE
I
= 15 A
CE
C
RES
0.1
0.05
50 60 70 80 90 100
0
10 20 30 40
6
7
8
9
10 11 12 13 14 15 16
V
CE
, Collector to Emitter Voltage (V)
V
GE
, Gate to Emitter Voltage (V)
Figure 18. Collector to Emitter On−State
Figure 17. Capacitance vs. Collector to Emitter
Voltage
Voltage vs. Gate to Emitter Voltage
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6
FGH50N3
TYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise noted) (continued)
J
0
10
0.50
0.20
0.10
0.05
0.02
0.01
t
1
P
D
−1
10
t
2
Duty Factor, D = t1/t2
Peak T = (P x Z
x R ) + T
ꢂ
ꢂ
J
D
JC
JC
C
Single Pulse
−2
10
10
−3
−2
−1
−5
−4
0
1
10
10
t1, Rectangular Pulse Duration (s)
10
10
10
10
Figure 19. IGBT Normalized Transient Thermal Impedance,
Junction to Case
FFH30US30S
Diode 49449
90%
10%
V
GE
L = 100 ꢀ H
E
ON2
E
OFF
V
CE
R
= 5 ꢁ
G
+
90%
10%
V
DD
= 180 V
FGH50N3
−
I
CE
t
rI
t
d(OFF)I
t
fI
t
d(ON)I
Figure 21. Switching Test Waveforms
Figure 20. Inductive Switching Test Circuit
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
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