FGH75T65SHDTL4 [ONSEMI]
IGBT，650V，75A 场截止沟槽;
| 型号： | FGH75T65SHDTL4 |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，650V，75A 场截止沟槽 双极性晶体管 |
| 文件： | 总9页 (文件大小：572K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT - Field Stop, Trench
650 V, 75 A
FGH75T65SHDTL4
Description
Using novel field stop IGBT technology, ON Semiconductor’s new
rd
series of field stop 3 generation IGBTs offer the optimum
www.onsemi.com
performance for solar inverter, UPS, welder, telecom, ESS and PFC
applications where low conduction and switching losses are essential.
V
I
C
CES
Features
650 V
75 A
• Maximum Junction Temperature: T =175°C
J
C
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
E1: Kelvin Emitter
E2: Power Emitter
• Low Saturation Voltage: V
= 1.6 V (Typ.) @ I = 75 A
C
CE(sat)
• 100% of the Parts Tested for I
• High Input Impedance
• Fast Switching
LM
G
E1
E2
• Tighten Parameter Distribution
• This Device is Pb−Free and is RoHS Compliant
• Do Not Recommend for Reflow and Full PKG Dipping
Applications
• Solar Inverter, UPS, Welder, Telecom, ESS, PFC
C
E2
E1
G
TO−247−4LD
CASE 340CJ
MARKING DIAGRAM
$Y&Z&3&K
FGH75T65
SHDTL4
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
FGH75T65SHDTL4 = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
December, 2019 − Rev. 2
FGH75T65SHDTL4/D
FGH75T65SHDTL4
ABSOLUTE MAXIMUM RATINGS
Symbol
Description
FGH75T65SHDTL4
Unit
V
V
CES
GES
Collector to Emitter Voltage
Gate to Emitter Voltage
650
20
V
V
Transient Gate to Emitter Voltage
Collector Current
30
V
I
T
C
T
C
T
C
= 25°C
= 100°C
= 25°C
150
A
C
75
A
I
(Note 1)
(Note 2)
Pulsed Collector Current
300
A
LM
I
Pulsed Collector Current
300
A
CM
I
F
Diode Forward Current
T
T
= 25°C
125
A
C
Diode Forward Current
= 100°C
75
A
C
I
(Note 2)
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
300
A
FM
P
D
T
T
= 25°C
455
W
W
°C
°C
°C
C
= 100°C
227
C
T
J
Operating Junction Temperature
Storage Temperature Range
−55 to +175
−55 to +175
300
T
STG
T
L
Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. V = 400 V, V = 15 V, I = 300 A, R = 73 ꢀ, Inductive Load.
CC
GE
C
G
2. Repetitive rating: Pulse width limited by max. junction temperature.
THERMAL CHARACTERISTICS
Symbol
(IGBT)
Parameter
FGH75T65SHDTL4
Unit
R
R
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
0.33
0.65
40
_C/W
_C/W
_C/W
ꢁ
JC
(Diode)
ꢁ
JC
R
ꢁ
JA
PACKAGE MARKING AND ORDERING INFORMATION
Packing
Method
Part Number
Top Mark
Package
Reel Size
Tape Width
Quantity
FGH75T65SHDTL4
FGH75T65SHDTL4
TO−247−4LD
Tube
−
−
30
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Collector to Emitter Breakdown Voltage
V
= 0 V, I = 1 mA
650
−
−
−
V
CES
GE
C
ꢂ
B
V
/
Temperature Coefficient of Breakdown Voltage
I
C
= 1 mA, Reference to 25°C
−
0.65
V/°C
CES
J
ꢂ
T
ꢃ
A
I
Collector Cut−Off Current
G−E Leakage Current
V
V
= V
= V
, V = 0 V
−
−
−
−
250
400
CES
CE
CES
GE
I
, V = 0 V
nA
GES
GE
GES
CE
ON CHARACTERISTICS
V
G−E Threshold Voltage
I
I
I
= 75 mA, V = V
GE
4.0
−
5.5
1.6
7.5
2.1
−
V
V
V
GE(th)
C
C
C
CE
V
Collector to Emitter Saturation Voltage
= 75 A, V = 15 V
CE(sat)
GE
−
2.28
= 75 A, V = 15 V,
GE
T
= 175°C
C
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2
FGH75T65SHDTL4
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted) (continued)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
V
= 30 V, V = 0 V,
C
Input Capacitance
−
−
−
3710
183
43
−
−
−
pF
pF
pF
CE
GE
ies
f = 1 MHz
C
Output Capacitance
oes
C
Reverse Transfer Capacitance
res
SWITCHING CHARACTERISTICS
V
= 400 V, I = 75 A,
C
T
Turn−On Delay Time
Rise Time
CC
G
−
−
−
−
−
−
−
55
50
−
−
−
−
−
−
−
ns
ns
d(on)
R
= 15 ꢀ, V = 15 V,
GE
T
r
Inductive Load, T = 25°C
C
T
Turn−Off Delay Time
Fall Time
189
39
ns
d(off)
T
f
ns
E
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
1.06
1.56
2.62
mJ
mJ
mJ
on
off
E
E
ts
V
= 400 V, I = 75 A,
C
T
Turn−On Delay Time
Rise Time
CC
G
−
−
−
−
−
−
−
48
56
−
−
−
−
−
−
−
ns
ns
d(on)
R
= 15 ꢀ, V = 15 V,
GE
T
r
Inductive Load, T = 25°C
C
T
Turn−Off Delay Time
Fall Time
205
40
ns
d(off)
T
f
ns
E
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
2.34
1.81
4.15
mJ
mJ
mJ
on
off
E
E
ts
V
CE
V
GE
= 400 V, I = 75 A,
Q
Total Gate Charge
−
−
−
126
24.1
47.6
−
−
−
nC
nC
nC
C
g
= 15 V
Q
ge
Q
gc
Gate to Emitter Charge
Gate to Collector Charge
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ELECTRICAL CHARACTERISTICS OF THE DIODE (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
−
Typ
1.8
Max
2.1
−
Unit
I = 75 A
T
C
= 25°C
V
V
FM
Diode Forward Voltage
F
T
T
= 175°C
= 175°C
= 25°C
−
1.7
C
C
I = 75 A,
ꢃ
J
E
rec
Reverse Recovery Energy
F
−
160
76
−
dI /dt = 200 A/ꢃ s
F
T
ns
T
rr
Diode Reverse Recovery Time
−
−
C
T
= 175°C
= 25°C
−
270
206
2199
−
C
T
nC
Q
Diode Reverse Recovery Charge
−
−
C
rr
T
C
= 175°C
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
FGH75T65SHDTL4
TYPICAL PERFORMANCE CHARACTERISTICS
300
240
180
120
60
300
TC = 25oC
TC = 175oC
15V
20V
20V
15V
12V
10V
240
12V
10V
180
VGE = 8V
120
VGE = 8V
60
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Collector−Emitter Voltage, VCE [V]
Collector−Emitter Voltage, VCE [V]
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
300
4
Common Emitter
VGE = 15V
Common Emitter
VGE = 15V
TC = 25oC
240
TC = 175oC
180
3
150A
120
60
0
75A
2
IC = 40A
1
−100
0
1
2
3
4
5
6
−50
0
50
100
150
200
Collector−Emitter Case Temperature, TC [oC]
Collector−Emitter Voltage, VCE [V]
Figure 3. Typical Saturation
Voltage Characteristics
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
20
16
12
8
Common Emitter
TC = 175oC
Common Emitter
TC = 25oC
16
12
75A
75A
8
IC = 40A
150A
150A
IC = 40A
4
0
4
0
4
8
12
16
20
4
8
12
16
20
Gate−Emitter Voltage, VGE [V]
Gate−Emitter Voltage, VGE [V]
Figure 5. Saturation Voltage vs. VGE
Figure 6. Saturation Voltage vs. VGE
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4
FGH75T65SHDTL4
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
10000
1000
100
15
Common Emitter
TC = 25oC
Cies
12
300V
400V
VCC = 200V
9
Coes
6
Cres
Common Emitter
VGE = 0V, f = 1MHz
3
TC = 25oC
10
0
0
25
50
75
100
125
150
1
10
Collector−Emitter Voltage, VCE [V]
30
Gate Charge, Q [nC]
g
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
400
1000
Common Emitter
VCC = 400V, VGE = 15V
IC = 75A
TC = 25oC
TC = 175oC
tr
td(off)
100
100
Common Emitter
VCC = 400V, VGE = 15V
tf
IC = 75A
TC = 25oC
td(on)
TC = 175oC
30
10
10
10
20
30
40
50
20
30
40
50
Gate Resistance, RG
[
]
W
Gate Resistance, RG
[ ]
W
Figure 9. Turn−on Characteristics vs.
Figure 10. Turn−off Characteristics
Gate Resistance
vs. Gate Resistance
100
5
Eoff
td(on)
tr
Eon
Common Emitter
1
VCC = 400V, VGE = 15V
Common Emitter
IC = 75A
VGE = 15V, RG = 15
TC = 25oC
TC = 175oC
W
TC = 25oC
TC = 175oC
10
8
15
0.4
10
20
30
40
50
30
45
60
75
Gate Resistance, RG
[
]
Collector Current, I
W
C [A]
Figure 11. Switching Loss vs.
Gate Resistance
Figure 12. Turn−on Characteristics
vs. Collector Current
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5
FGH75T65SHDTL4
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
400
100
5
Eoff
td(off)
1
Eon
Common Emitter
VGE = 15V, RG = 15
TC = 25oC
tf
Common Emitter
W
VGE = 15V, RG = 15
TC = 25oC
W
TC = 175oC
TC = 175oC
10
15
0.1
15
30
45
60
75
30
45
60
75
Collector Current, IC [A]
Collector Current, IC [A]
Figure 13. Turn−off Characteristics
Figure 14. Switching Loss
vs. Collector Current
vs. Collector Current
375
300
100
Square Wave
TJ <= 175oC, D = 0.5, VCE = 400V
10ms
300
225
150
75
VGE = 15/0V, RG = 15
W
100ms
1ms
TC = 25oC
TC = 75oC
10 ms
DC
10
1
TC = 100oC
*Notes:
1.T = 255C
C
2.T = 1755C
J
3.Single Pulse
0
1k
0.1
10k
100k
1M
1
10
100
1000
Switching Frequency, f[Hz]
Collector−Emitter Voltage, VCE [V]
Figure 15. Load Current vs. Frequency
Figure 16. SOA Characteristics
300
100
20
16
12
8
TC = 25oC
oC
TC = 175
ms
ms
di/dt = 200A/
di/dt = 100A/
TJ = 175oC
TJ = 25oC
10
1
di/dt = 200A/ ms
TJ = 75oC
TC = 25oC
C = 75oC
4
ms
di/dt = 100A/
T
TC = 175oC
0
0
1
2
3
4
5
0
20
40
60
80
Forward Voltage, VF [V]
Forward Current, IF [A]
Figure 17. Forward Characteristics
Figure 18. Reverse Recovery Current
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6
FGH75T65SHDTL4
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
500
400
300
200
100
0
2500
TC = 25oC
oC −−−
TC = 25oC
TC = 175oC −−−
TC = 175
2000
1500
1000
di/dt = 100A/ ms
di/dt = 200A/ ms
di/dt = 100A/ ms
di/dt = 200A/ ms
500
0
0
20
40
60
80
0
20
40
60
80
Forward Current, I F [A]
Forward Current, IF [A]
Figure 19. Reverse Recovery Time
Figure 20. Stored Charge
PDM
t1
t2
Figure 21. Transient Thermal Impedance of IGBT
PDM
t1
t2
Figure 22. Transient Thermal Impedance of Diode
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−4LD
CASE 340CJ
ISSUE A
DATE 16 SEP 2019
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13852G
TO−247−4LD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
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onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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