FGH75T65SQDNL4 [ONSEMI]
IGBT，场截止 IV/4 引线;
| 型号： | FGH75T65SQDNL4 |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，场截止 IV/4 引线 双极性晶体管 |
| 文件： | 总11页 (文件大小：346K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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IGBT - Field Stop, IV/4 Lead
FGH75T65SQDNL4
75 A, 650 V
VCEsat (Typ.) = 1.6 V
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop IV Trench construction, and provides
superior performance in demanding switching applications, offering
both low on state voltage and minimal switching loss. In addition, this
new device is packaged in a TO−247−4L package that provides
C
G
significant reduction in E Losses compared to standard TO−247−3L
on
package. The IGBT is well suited for UPS and solar applications.
Incorporated into the device is a soft and fast co−packaged free
wheeling diode with a low forward voltage.
E1
E
Features
• Extremely Efficient Trench with Field Stop Technology
• T
= 175°C
Jmax
• Improved Gate Control Lowers Switching Losses
TO−247−4LD
CASE 340CJ
C
• Separate Emitter Drive Pin
E
E1
• TO−247−4L for Minimal E Losses
on
G
• Optimized for High Speed Switching
• 100% of the Parts Tested for I
LM
MARKING DIAGRAM
• These are Pb−Free Devices
Typical Applications
• Solar Inverter
FGH75T65
SQDNL4
AYWWG
• Uninterruptible Power Inverter Supplies (UPS)
• Neutral Point Clamp Topology
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
V
Value
Unit
V
Collector−emitter voltage
650
CES
Collector current
@ TC = 25°C
I
A
C
A
Y
WW
G
= Assembly Location
= Year
= Work Week
150
75
@ TC = 100°C
Diode Forward Current
@ TC = 25°C
I
A
= Pb−Free Package
F
150
75
@ TC = 100°C
ORDERING INFORMATION
Diode Pulsed Current
I
300
A
A
FM
T
Limited by T Max
PULSE
J
Device
Package
Shipping
Pulsed collector current, T
I
300
pulse
CM
FGH75T65SQDNL4
TO−247
30 Units / Rail
limited by T
I
Jmax
LM
(Pb−Free)
Gate−emitter voltage
V
$20
$30
V
V
GE
Transient gate−emitter voltage
(T = 5 ms, D < 0.10)
PULSE
Power Dissipation
P
D
W
@ TC = 25°C
375
188
@ TC = 100°C
Operating junction temperature range
Storage temperature range
T
−55 to +175
−55 to +175
260
°C
°C
°C
J
T
stg
Lead temperature for soldering, 1/8″
from case for 5 seconds
T
SLD
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
March, 2022 − Rev. 5
FGH75T65SQDNL4/D
FGH75T65SQDNL4
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.4
Unit
°C/W
°C/W
°C/W
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
R
q
JC
q
JC
q
JA
R
R
0.65
40
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
= 0 V, I = 500 mA
V
(BR)CES
650
−
−
V
V
GE
C
Collector−emitter saturation voltage
V
= 15 V, I = 75 A
V
CEsat
−
−
1.6
1.92
2.1
−
GE
C
V
GE
= 15 V, I = 75 A, T = 175°C
C
J
Gate−emitter threshold voltage
V
GE
= V , I = 75 mA
V
GE(th)
4.0
4.8
5.6
V
CE
C
Collector−emitter cut−off current, gate−
emitter short−circuited
V
= 0 V, V = 650 V
I
−
−
−
6.0
0.25
−
mA
GE
CE
CES
V
GE
= 0 V, V = 650 V, T 175°C
CE
J =
Gate leakage current, collector−emitter
short−circuited
V
= 20 V , V = 0 V
I
−
−
250
nA
pF
GE
CE
GES
DYNAMIC CHARACTERISTIC
Input capacitance
C
−
−
−
−
−
−
5100
115
12
−
−
−
−
−
−
ies
Output capacitance
C
oes
V
= 30 V, V = 0 V, f = 1 MHz
GE
CE
Reverse transfer capacitance
Gate charge total
C
res
Q
152
29
nC
ns
g
Gate to emitter charge
Gate to collector charge
Q
Q
V
CE
= 400 V, I = 75 A, V = 15 V
ge
gc
C
GE
39
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
59
58
−
−
−
−
−
−
−
−
−
−
−
−
−
−
d(on)
t
r
Turn−off delay time
t
354
69
T = 25°C
d(off)
J
V
= 400 V, I = 75 A
CC
C
Fall time
t
f
R = 20 W
g
GE
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
V
= 15 V
E
E
1.82
1.86
3.68
56
mJ
ns
on
off
E
ts
t
t
d(on)
t
r
57
Turn−off delay time
394
73
T = 175°C
d(off)
J
V
= 400 V, I = 75 A
C
CC
Fall time
t
f
R = 20 W
g
GE
Turn−on switching loss
Turn−off switching loss
Total switching loss
V
= 15 V
E
E
2.22
2.02
4.24
mJ
on
off
E
ts
DIODE CHARACTERISTIC
Forward voltage
V
= 0 V, I = 75 A
V
F
−
−
1.60
1.70
2.0
−
V
GE
F
V
GE
= 0 V, I = 75 A, T = 175°C
F
J
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
t
−
−
−
−
−
−
134
0.78
10
−
−
−
−
−
−
ns
mC
A
rr
T = 25°C
J
Q
I = 75 A, V = 200 V
rr
F
R
di /dt = 200 A/ms
F
I
rrm
t
rr
202
2.54
20.2
ns
mC
A
T = 175°C
J
Q
I = 75 A, V = 200 V
rr
F
R
di /dt = 200 A/ms
F
I
rrm
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
FGH75T65SQDNL4
TYPICAL CHARACTERISTICS
160
140
120
100
80
160
T = 25°C
T = 150°C
J
J
140
120
100
80
7 V
7 V
6.5 V
6.5 V
6 V
60
60
6 V
40
40
5.5 V
8
5.5 V
5 V
20
0
20
0
0
0
0
1
2
3
4
5
6
7
9
0
1
2
3
4
5
6
7
8
V
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
CE
Figure 1. Output Characteristics
Figure 2. Output Characteristics
160
140
120
100
80
160
140
120
100
80
T = 175°C
T = −55°C
J
J
7 V
6.5 V
7 V
6.5 V
6 V
60
60
5.5 V
5 V
6 V
40
40
5 V
5
20
0
20
0
5.5 V
1
2
3
4
6
7
8
0
1
2
3
4
5
6
7
8
V
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
CE
Figure 3. Output Characteristics
Figure 4. Output Characteristics
160
140
120
100
80
1.8
1.7
1.6
1.5
1.4
1.3
1.2
I
I
= 75 A
= 50 A
C
C
60
40
20
0
I
= 25 A
C
T = 175°C
J
1.1
1.0
T = 25°C
J
1
2
3
4
5
6
7
8
9
10
−75 −50 −25
0
25 50 75 100 125 150 175 200
V
GE
, GATE−EMITTER VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. Typical Transfer Characteristics
Figure 6. VCE(sat) vs. TJ
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3
FGH75T65SQDNL4
TYPICAL CHARACTERISTICS
100K
10K
1K
100
T = 25°C
J
90
80
70
60
50
40
30
20
C
ies
C
oes
100
10
1
C
res
T = 175°C
J
10
0
T = 25°C
J
0
0
0
10 20 30 40 50 60 70 80 90 100
0
0.5
1.0
1.5
2.0
2.5
3.0
V
, COLLECTOR−EMITTER VOLTAGE (V)
V , FORWARD VOLTAGE (V)
F
CE
Figure 7. Typical Capacitance
Figure 8. Diode Forward Characteristics
16
14
12
10
2.5
2.4
2.3
2.2
2.1
2.0
1.9
1.8
1.7
V
V
= 400 V
= 15 V
= 75 A
CE
GE
I
C
E
on
Rg = 20 W
E
off
8
6
4
V
V
= 400 V
= 15 V
CE
2
0
GE
1.6
1.5
I
C
= 75 A
20
40
60
80
100 120
140
160
0
20 40
60 80 100 120 140 160 180 200
Q , GATE CHARGE (nC)
G
T , JUNCTION TEMPERATURE (°C)
J
Figure 9. Typical Gate Charge
Figure 10. Switching Loss vs. Temperature
1000
100
3
V
V
= 400 V
= 15 V
T = 175°C
CE
t
d(off)
GE
2.5
J
E
on
Rg = 20 W
2
t
f
E
off
t
r
t
d(on)
1.5
1
0.5
0
10
1
V
V
= 400 V
= 15 V
CE
GE
I
C
= 75 A
Rg = 20 W
25
50
75
100
125
150 175
200
10
20
30
40
50
60
70
80
90
T , JUNCTION TEMPERATURE (°C)
J
I , COLLECTOR CURRENT (A)
C
Figure 11. Switching Time vs. Temperature
Figure 12. Switching Loss vs. IC
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FGH75T65SQDNL4
TYPICAL CHARACTERISTICS
5.0
1000
100
V
V
= 400 V
= 15 V
CE
t
t
d(off)
4.5
4.0
3.5
3.0
2.5
2.0
E
on
GE
T = 175°C
J
I
C
= 75 A
t
f
E
off
d(on)
t
r
10
1
V
V
= 400 V
= 15 V
T = 175°C
CE
GE
J
1.5
1.0
Rg = 20 W
10
20
30
40
50
60
70
80
90
0
10
20
30
40
50
60
I , COLLECTOR CURRENT (A)
C
R , GATE RESISTOR (W)
G
Figure 13. Switching Time vs. IC
Figure 14. Switching Loss vs. RG
3.5
3.0
2.5
2.0
1.5
1.0
1000
V
= 15 V
E
GE
on
off
t
d(off)
T = 175°C
J
I
C
= 75 A
Rg = 20 W
E
t
t
d(on)
100
10
t
f
r
V
V
= 400 V
= 15 V
CE
GE
T = 175°C
0.5
0
J
I
C
= 75 A
0
10
20
30
40
50
60
150 200
250 300
350
400
450
500 550
R , GATE RESISTOR (W)
G
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Time vs. RG
Figure 16. Switching Loss vs. VCE
1000
t
10 ms
d(off)
100
10
100 ms
t
f
t
100
10
1 ms
r
t
10 ms
d(on)
V
= 15 V
T = 175°C
= 75 A
Rg = 20 W
1
GE
Single Pulse
J
DC
I
C
T = 25°C
C
T = 175°C
J
0.1
150 200
250 300
350
400 450
500 550
1
10
100
1000
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Switching Time vs. VCE
Figure 18. Safe Operating Area
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FGH75T65SQDNL4
TYPICAL CHARACTERISTICS
150
130
110
90
3.0
V
R
= 400 V
V
R
= 400 V
2.5
2.0
1.5
1.0
T = 175°C, I = 75 A
J
F
T = 175°C, I = 75 A
J
F
T = 25°C, I = 75 A
J
F
T = 25°C, I = 75 A
J
F
70
50
0.5
0
100
300
500
700
900
1100 1300
100
300
500
700
900
1100 1300
di /dt, DIODE CURRENT SLOPE (A/ms)
F
di /dt, DIODE CURRENT SLOPE (A/ms)
F
Figure 19. trr vs. diF/dt
Figure 20. Qrr vs. diF/dt
50
40
30
20
2.20
2.00
1.80
1.60
1.40
1.20
1.00
V
R
= 400 V
T = 175°C, I = 75 A
J
F
I = 75 A
F
I = 50 A
F
I = 25 A
F
T = 25°C, I = 75 A
J
F
10
0
0.80
0.60
100
300
500
700
900
1100 1300
−75 −50 −25
0
25 50 75 100 125 150 175 200
T , JUNCTION TEMPERATURE (°C)
J
di /dt, DIODE CURRENT SLOPE (A/ms)
F
Figure 21. Irm vs. diF/dt
Figure 22. VF vs. TJ
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FGH75T65SQDNL4
TYPICAL CHARACTERISTICS
1
R
= 0.28
q
JC
50% Duty Cycle
0.1
20%
10%
5%
R (°C/W) C (J/W)
i
i
R
C
R
C
R
Case
Junction
1
1
2
2
n
0.0301
0.0184
0.0255
0.0536
0.1129
0.0409
0.0033
0.0172
0.0392
0.0590
0.0886
0.7735
0.01
0.001
2%
C
n
Duty Factor = t /t
1
2
Peak T = P
x Z
+ T
C
q
J
DM
JC
Single Pulse
0.0001
0.000001
0.00001
0.0001
0.001
PULSE TIME (sec)
0.01
0.1
1
Figure 23. IGBT Transient Thermal Impedance
1
R
= 0.62
q
JC
50% Duty Cycle
R (°C/W) C (J/W)
i
i
20%
10%
5%
0.007994 0.000125
0.010512 0.000951
0.011485 0.002753
0.026558 0.003765
0.047571 0.006647
0.103104 0.009699
0.061427 0.051480
0.065499 0.152673
0.134709 0.234748
0.152781 0.654533
0.1
R
C
R
R
n
Case
Junction
1
2
2%
0.01
Single Pulse
C
C
n
1
2
Duty Factor = t /t
1
2
Peak T = P
x Z
+ T
JC C
q
J
DM
0.001
0.000001
0.00001
0.0001
0.001
PULSE TIME (sec)
0.01
0.1
1
Figure 24. Diode Transient Thermal Impedance
Figure 25. Test Circuit for Switching Characteristics
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FGH75T65SQDNL4
Figure 26. Definition of Turn On Waveform
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FGH75T65SQDNL4
Figure 27. Definition of Turn Off Waveform
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9
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−4LD
CASE 340CJ
ISSUE A
DATE 16 SEP 2019
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13852G
TO−247−4LD
PAGE 1 OF 1
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