FGHL40T65MQDT [ONSEMI]
IGBT - 650 V 40 A FS4 medium switching speed IGBT with full rated copack diode;
| 型号： | FGHL40T65MQDT |
| 厂家： | 
ONSEMI |
| 描述： | IGBT - 650 V 40 A FS4 medium switching speed IGBT with full rated copack diode 双极性晶体管 |
| 文件： | 总9页 (文件大小：252K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Field Stop Trench IGBT
650 V, 40 A
FGHL40T65MQDT
Field stop 4 generation mid speed IGBT technology copacked
th
with full rated current diode.
Features
www.onsemi.com
• Maximum Junction Temperature: T = 175°C
J
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
40 A, 650 V
CESat = 1.45 V
V
• Low Saturation Voltage: V
= 1.45 V (Typ.) @ I = 40 A
C
CE(Sat)
• 100% of the Parts are Tested for I (Note 2)
LM
• Smooth and Optimized Switching
• Tight Parameter Distribution
• RoHS Compliant
C
Typical Applications
• Solar Inverter
• UPS, ESS
G
E
• PFC, Converters
MAXIMUM RATINGS
Parameter
Symbol Value
Unit
V
Collector to Emitter Voltage
V
CES
V
GES
650
G
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
20
30
V
C
E
TO−247−3L
CASE 340CX
Collector Current (Note 1)
@ T = 25°C
I
C
60
40
A
C
@ T = 100°C
C
Pulsed Collector Current (Note 2)
Pulsed Collector Current (Note 3)
I
160
160
A
A
A
LM
MARKING DIAGRAM
I
CM
Diode Forward Current (Note 1) @ T
@ T
25°C
100°C
I
F
60
40
C =
C =
Pulsed Diode Maximum Forward Current
I
160
A
FM
Maximum Power Dissipation @ T = 25°C
P
238
119
W
C
D
$Y&Z&3&K
FGHL
@ T = 100°C
C
40T65MQDT
Operating Junction and Storage Temperature
Range
T ,
−55 to
+175
°C
°C
J
T
STG
Maximum Lead Temp. for Soldering
Purposes (1/8″ from case for 5 s)
T
260
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Value limit by bond wire
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= 3−Digit Date Code
= 2−Digit Lot Traceability Code
2. V = 400 V, V = 15 V, I = 160 A, Inductive Load, 100% tested
CC
GE
C
FGHL40T65MQDT = Specific Device Code
3. Repetitive rating: pulse width limited by max. junction temperature
ORDERING INFORMATION
Device
Package
Shipping
FGHL40T65MQDT TO−247−3L 30 Units / Tube
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
April, 2020 − Rev. 0
FGHL40T65MQDT/D
FGHL40T65MQDT
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.63
0.91
40
Unit
°C/W
°C/W
°C/W
Thermal Resistance Junction−to−case, for IGBT
Thermal Resistance Junction−to−case, for Diode
Thermal Resistance Junction−to−ambient
R
q
JC
R
q
JC
R
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector to Emitter Breakdown Voltage
V
C
= 0 V,
BV
650
−
−
−
V
GE
CES
I
= 1 mA
Temperature Coefficient of Breakdown
Voltage
V
C
= 0 V,
= 1 mA
−
0.6
V/°C
GE
DBV
DT
CES
I
J
Collector to Emitter Cut−off Current
V
CE
= 0 V,
I
−
−
−
−
250
400
mA
GE
CES
V
= 650 V
Gate Leakage Current
V
= 20 V,
= 0 V
I
nA
GE
GES
V
CE
ON CHARACTERISTICS
Gate to Emitter Threshold Voltage
Collector to Emitter Saturation Voltage
V
= V , I = 40 mA
V
GE(th)
3.0
4.5
6.0
V
V
GE
CE
C
V
GE
= 15 V, I = 40 A, T = 25°C
= 15 V, I = 40 A, T = 175°C
V
CE(sat)
−
−
1.45
1.65
1.8
−
GE
C
J
V
C
J
DYNAMIC CHARACTERISTICS
Input Capacitance
V
= 30 V,
GE
C
−
−
−
−
−
−
2680
80
9
−
−
−
−
−
−
pF
nC
CE
ies
V
= 0 V,
Output Capacitance
C
oes
f = 1 MHz
Reverse Transfer Capacitance
Gate Charge Total
C
res
V
= 400 V,
= 40 A,
Q
80
16
19
CE
g
I
C
Gate to Emitter Charge
Gate to Collector Charge
Q
ge
gc
V
= 15 V
GE
Q
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Turn−on Delay Time
Rise Time
T = 25°C,
CC
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
16
10
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
J
d(on)
V
= 400 V,
= 20 A,
t
r
I
C
G
GE
R
= 6 W,
= 15 V
Turn−off Delay Time
Fall Time
t
82
d(off)
V
t
f
51
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
Turn−on Delay Time
Rise Time
E
on
E
off
0.35
0.25
0.60
18
mJ
ns
E
ts
T = 25°C,
t
t
J
CC
C
d(on)
V
= 400 V,
= 40 A,
t
r
22
I
R
= 6 W,
G
Turn−off Delay Time
Fall Time
75
d(off)
V
= 15 V
GE
t
f
38
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
E
on
E
off
0.88
0.49
1.36
mJ
E
ts
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2
FGHL40T65MQDT
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Turn−on delay time
Rise time
T = 175°C,
CC
t
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
16
11
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
J
d(on)
V
= 400 V,
= 20 A,
t
r
I
C
G
GE
R
= 6 W,
= 15 V
Turn−off delay time
Fall time
93
d(off)
V
t
f
88
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
E
on
E
off
0.64
0.49
1.13
16
mJ
ns
E
ts
T = 175°C,
t
t
J
CC
d(on)
V
= 400 V,
= 40 A,
t
r
26
I
C
R
= 6 W,
G
Turn−off delay time
Fall time
85
d(off)
V
GE
= 15 V
t
f
75
Turn−on switching loss
Turn−off switching loss
Total switching loss
DIODE CHARACTERISTICS
E
on
E
off
1.31
0.90
2.21
mJ
V
E
ts
Diode Forward Voltage
I = 40 A, T = 25°C
F
V
F
−
−
1.7
2.15
J
I = 40 A, T = 175°C
F
1.65
−
J
DIODE SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Reverse Recovery Energy
T = 25°C, V = 400 V, I = 20 A,
E
rec
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
54
42
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
mJ
ns
nC
A
J
CE
F
di /dt = 1000 A/ms
F
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Diode Reverse Recovery Current
Reverse Recovery Energy
T
rr
Q
329
15
rr
I
rr
T = 25°C, V = 400 V, I = 40 A,
E
rec
121
86
mJ
ns
nC
A
J
CE
F
di /dt = 1000 A/ms
F
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Diode Reverse Recovery Current
Reverse Recovery Energy
T
rr
Q
665
15
rr
I
rr
T = 175°C, V = 400 V, I = 20 A,
E
rec
360
104
1379
27
mJ
ns
nC
A
J
CE
F
di /dt = 1000 A/ms
F
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Diode Reverse Recovery Current
Reverse Recovery Energy
T
rr
Q
rr
I
rr
T = 175°C, V = 400 V, I = 40 A,
E
rec
519
141
1877
26
mJ
ns
nC
A
J
CE
F
di /dt = 1000 A/ms
F
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Diode Reverse Recovery Current
T
rr
Q
rr
I
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
3
FGHL40T65MQDT
TYPICAL CHARACTERISTICS
160
120
80
40
0
160
T = 25°C
T = 175°C
J
20 V
15 V
12 V
10 V
20 V
15 V
12 V
10 V
J
120
80
40
0
V
GE
= 8 V
V
GE
= 8 V
0
1
2
3
4
5
0
1
2
3
4
5
V
CE
, Collector−Emitter Voltage (V)
V
CE
, Collector−Emitter Voltage (V)
Figure 1. Typical Output Characteristics (TJ = 255C)
Figure 2. Typical Output Characteristics (TJ = 1755C)
160
80
Common Emitter
Common Emitter
V
GE
= 15 V
V
CE
= 15 V
T = 25°C
T = 175°C
J
T = 25°C
T = 175°C
J
J
J
120
80
40
0
60
40
20
0
0
1
2
3
4
5
0
2
4
6
8
10
V
CE
, Collector−Emitter Voltage (V)
V
GE
, Gate−Emitter Voltage (V)
Figure 3. Typical Saturation Voltage Characteristics
Figure 4. Typical Transfer Characteristics
10000
1000
100
10
2.5
Common Emitter
V
GE
= 15 V
Cies
80 A
2.0
1.5
1.0
Coes
Cres
40 A
= 20 A
100
I
C
Common Emitter
= 0 V, f = 1 MHz
V
GE
1
30
−100
0
50
150
200
−50
1
10
, Collector−Emitter Voltage (V)
V
CE
T , Junction Temperature (°C)
J
Figure 6. Capacitance Characteristics
Figure 5. Saturation Voltage vs. Junction Temperature
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4
FGHL40T65MQDT
TYPICAL CHARACTERISTICS (continued)
15
12
9
1000
Common Emitter
= 40 A
V
CC
= 200 V
I
C
300 V
400 V
10 ms
100
10
1
100 ms
DC
1 ms
10 ms
6
*Notes:
1. T = 25°C
3
C
2. T = 175°C
J
3. Single Pulse
0
0.1
0
20
40
60
80
100
1
10
, Collector−Emitter Voltage (V)
CE
100
1000
Q , Gate Charge (nC)
V
g
Figure 7. Gate Charge Characteristics
Figure 8. SOA Characteristics
100
1000
100
10
td(off)
tr
Common Emitter
Common Emitter
td(on)
20
V
= 400 V, V = 15 V
V
I
J
= 400 V, V = 15 V
CC GE
tf
CC
C
GE
I
= 40 A
= 40 A
C
T = 25°C
T = 25°C
J
T = 175°C
T = 175°C
J
J
10
0
10
30
40
50
0
10
20
30
40
50
R , Gate Resistance (W)
g
R , Gate Resistance (W)
g
Figure 9. Turn−on Characteristics vs. Gate Resistance
Figure 10. Turn−off Characteristics vs. Gate Resistance
1000
500
Common Emitter
Common Emitter
V
= 400 V, V = 15 V
V
= 400 V, V = 15 V
CC
G
GE
CC
G
GE
R
= 6 W
R
= 6 W
T = 25°C
T = 25°C
J
J
T = 175°C
T = 175°C
J
J
100
10
1
tf
tr
100
td(off)
td(on)
10
0
20
40
60
80
100
120
0
20
40
60
80
100
120
I , Collector Current (A)
C
I , Collector Current (A)
C
Figure 11. Turn−on Characteristics vs. Collector Current Figure 12. Turn−off Characteristics vs. Collector Current
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5
FGHL40T65MQDT
TYPICAL CHARACTERISTICS (continued)
10
10
Common Emitter
= 400 V, V = 15 V
V
CC
GE
I
= 40 A
C
T = 25°C
Eon
J
Eon
T = 175°C
J
1
1
Eoff
Common Emitter
Eoff
V
= 400 V, V = 15 V
CC
G
GE
R
= 6 W
T = 25°C
J
T = 175°C
J
0.1
0.1
0
10
20
30
40
50
0
20
40
60
80
100
120
R , Gate Resistance (W)
g
I , Collector Current (A)
C
Figure 13. Switching Loss vs. Gate Resistance
Figure 14. Switching Loss vs. Collector Current
30
25
20
15
10
5
160
V
F
= 400 V
Common Emitter
T = 25°C
T = 175°C
J
R
I = 40 A
J
T = 25°C
J
T = 175°C
120
80
40
0
J
0
400
600
800
1000
0
1
2
3
4
5
di /dt, Diode Current Slop (A/ms)
F
V , Forward Voltage (V)
F
Figure 15. Forward Characteristics
Figure 16. Reverse Recovery Current
250
200
150
100
50
2500
2000
1500
1000
500
V
F
= 400 V
V = 400 V
R
R
I = 40 A
I = 40 A
F
T = 25°C
T = 25°C
J
J
T = 175°C
T = 175°C
J
J
0
0
400
600
800
1000
400
600
800
1000
di /dt, Diode Current Slop (A/ms)
F
di /dt, Diode Current Slop (A/ms)
F
Figure 17. Reverse Recovery Time
Figure 18. Stored Charge
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6
FGHL40T65MQDT
TYPICAL CHARACTERISTICS (continued)
1
0.1
0.5
0.2
P
DM
0.1
t
1
0.05
t
2
0.02
Duty Factor, D = t1 / t2
Peak T = Pdm x Zthjc + T
0.01
j
c
0.01
R
1
R
2
0.001
0.0001
C = t / R C = t / R
2
1
1
1
2
2
Single Pulse
i:
1
2
3
4
ri [K/W]: 0.0145
t [s]:
0.1674
0.2176
0.1825
1.504E−5 9.670E−5 2.799E−3 1.724E−2
−6
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
10
10
Rectangular Pulse Duration (s)
Figure 19. Transient Thermal Impedance of IGBT
1
0.1
0.5
0.2
P
DM
t
1
0.1
0.05
t
2
Duty Factor, D = t1 / t2
Peak T = Pdm x Zthjc + T
0.02
j
c
R
1
R
2
0.01
0.01
C = t / R C = t / R
2
1
1
1
2
2
0.001
Single Pulse
i:
1
2
3
4
ri [K/W]: 0.0227
0.2340
0.3027
0.1592
t [s]:
3.003E−5 1.348E−4 2.815E−3 1.701E−2
0.0001
−6
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
10
10
Rectangular Pulse Duration (s)
Figure 20. Transient Thermal Impedance of Diode
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7
FGHL40T65MQDT
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
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8
FGHL40T65MQDT
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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