FGHL75T65LQDTL4 [ONSEMI]
IGBT - 650 V 75 A FS4 low Vce(sat) IGBT with full rated copack diode;
| 型号： | FGHL75T65LQDTL4 |
| 厂家： | 
ONSEMI |
| 描述： | IGBT - 650 V 75 A FS4 low Vce(sat) IGBT with full rated copack diode 双极性晶体管 |
| 文件： | 总9页 (文件大小：422K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT - Field Stop, Trench
650 V, 75 A
FGHL75T65LQDTL4
Description
Field stop 4 generation Low V
th
IGBT technology and Full
CE(sat)
current rated copack Diode technology.
www.onsemi.com
Features
V
I
V
CE(Sat)
CES
C
• Maximum Junction Temperature: T = 175°C
J
650 V
75 A
1.15 V
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
C
• Low Saturation Voltage: V
• 100% of the Part are Tested for I (Note 2)
= 1.15 V (Typ.) @ I = 75 A
C
CE(Sat)
LM
• Smooth & Optimized Switching
• Tight Parameter Distribution
• Co−Packed with Soft and Fast Recovery Diode
• RoHS Compliant
E1: Kelvin Emitter
E2: Power Emitter
G
E1
E2
Typical Applications
• Solar Inverter
• UPS, ESS
• PFC, Converters
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
V
TO−247−4LD
CASE 340CJ
Collector to Emitter Voltage
V
CES
V
GES
650
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
20
30
V
MARKING DIAGRAM
Collector Current @ T = 25°C (Note 1)
I
C
80
75
A
C
Collector Current @ T = 100°C
C
Pulsed Collector Current (Note 2)
Pulsed Collector Current (Note 3)
I
300
300
80
A
A
A
LM
I
CM
$Y&Z&3&K
FGHL75T65
LQDTL4
Diode Forward Current @ T = 25°C
I
F
C
(Note 1)
Diode Forward Current @ T = 100°C
75
C
Pulsed Diode Maximum Forward Current
I
300
469
234
A
FM
Maximum Power Dissipation @ T = 25°C
P
W
C
D
Maximum Power Dissipation @ T = 100°C
C
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= 3−Digit Data Code
Operating Junction and Storage
Temperature Range
T ,
STG
−55 to
°C
°C
J
T
+175
Maximum Lead Temp. for Soldering
Purposes (1/8″ from case for 5 s)
T
L
260
= 2−Digit Lot Traceability Code
FGHL75T65LQDTL4 = Specific Device Code
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Value limit by bond wire.
ORDERING INFORMATION
Device
Package
Shipping
2. V = 400 V, V = 15 V, I = 300 A, Inductive Load, 100% Tested.
CC
GE
C
3. Repetitive rating: Pulse width limited by max. Junction temperature.
30 Units / Rail
FGHL75T65LQDTL4
TO−247−4LD
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
July, 2021 − Rev. 0
FGHL75T65LQDTL4/D
FGHL75T65LQDTL4
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.32
0.48
40
Unit
_C/W
_C/W
_C/W
Thermal Resistance Junction−to−Case, for IGBT
Thermal Resistance Junction−to−Case, for Diode
Thermal Resistance Junction−to−Ambient
R
q
JC
R
q
JC
R
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector to Emitter Breakdown Voltage
V
V
= 0 V, I = 1 mA
BV
CES
650
−
−
−
V
GE
C
Temperature Coefficient of Breakdown
Voltage
= 0 V, I = 1 mA
DBV
/ DT
J
−
0.6
V/_C
GE
C
CES
Collector to Emitter Cut−off Current
Gate Leakage Current
V
V
= 0 V, V = 650 V
I
CES
−
−
−
−
250
400
mA
GE
CE
= 20 V, V = 0 V
I
nA
GE
CE
GES
ON CHARACTERISTICS
Gate to Emitter Threshold Voltage
Collector to Emitter Saturation Voltage
V
= V , I = 75 mA
V
GE(th)
3.0
4.5
6.0
V
V
GE
CE
C
V
GE
V
GE
= 15 V, I = 75 A, T = 25_C
V
CE(sat)
−
−
1.15
1.22
1.35
−
C
J
J
= 15 V, I = 75 A, T = 175_C
C
DYNAMIC CHARACTERISTICS
Input Capacitance
V
= 30 V, V = 0 V, f = 1 MHz
C
−
−
−
−
−
−
15030
181
68
−
−
−
−
−
−
pF
nC
CE
CC
GE
ies
Output Capacitance
C
oes
Reverse Transfer Capacitance
Gate Charge Total
C
res
V
= 400 V, I = 75 V, V = 15 V
Q
779
69
C
GE
g
Gate to Emitter Charge
Gate to Collector Charge
Q
ge
gc
Q
251
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Turn−on Delay Time
Rise Time
T = 25_C,
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
40
12
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
J
CC
d(on)
V
= 400 V, I = 37.5 A,
C
t
r
R
GE
= 4.7 W,
G
V
= 15 V
Turn−off Delay Time
Fall Time
t
560
144
0.51
1.39
1.9
d(off)
t
f
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
Turn−on Delay Time
Rise Time
E
on
E
off
mJ
ns
E
ts
T = 25_C,
t
t
40
J
CC
d(on)
V
= 400 V, I = 75 A,
C
t
r
20
R
GE
= 4.7 W,
G
V
= 15 V
Turn−off Delay Time
Fall Time
548
112
1.01
2.53
3.54
d(off)
t
f
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
E
on
E
off
mJ
E
ts
www.onsemi.com
2
FGHL75T65LQDTL4
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Turn−on Delay Time
Rise Time
T = 175_C,
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
32
16
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
J
CC
d(on)
V
= 400 V, I = 37.5 A,
C
t
r
R
GE
= 4.7 W,
G
V
= 15 V
Turn−off Delay Time
Fall Time
t
640
212
1.45
2
d(off)
t
f
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
Turn−on Delay Time
Rise Time
E
on
E
off
mJ
ns
E
ts
3.45
36
T = 175_C,
t
t
J
CC
d(on)
V
= 400 V, I = 75 A,
C
t
r
28
R
GE
= 4.7 W,
G
V
= 15 V
Turn−off Delay Time
Fall Time
616
168
2.4
3.64
6.04
d(off)
t
f
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
DIODE CHARACTERISTICS
Diode Forward Voltage
E
on
E
off
mJ
E
ts
I = 75 A, T = 25_C
V
F
−
−
1.65
1.55
2.1
−
V
F
J
I = 75 A, T = 175_C
F
J
Reverse Recovery Energy
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Energy
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Energy
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Energy
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
T = 25_C, V = 400 V,
E
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
105
59
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
mJ
ns
nC
A
J
R
F
REC
I = 37.5 A, di /dt = 1000 A/ms
F
T
rr
Q
574
20
rr
I
rr
T = 25_C, V = 400 V,
E
REC
152
87
mJ
ns
nC
A
J
R
I = 75 A, di /dt = 1000 A/ms
F
F
T
rr
Q
794
18
rr
I
rr
T = 175_C, V = 400 V,
E
REC
550
119
2154
36
mJ
ns
nC
A
J
R
F
I = 37.5 A, di /dt = 1000 A/ms
F
T
rr
Q
rr
I
rr
T = 175_C, V = 400 V,
E
REC
764
145
2947
40
mJ
ns
nC
A
J
R
I = 75 A, di /dt = 1000 A/ms
F
F
T
rr
Q
rr
I
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
3
FGHL75T65LQDTL4
TYPICAL CHARACTERISTICS
300
250
200
150
100
300
250
200
150
20 V
20 V
15 V
12 V
10 V
15 V
12 V
10 V
V
= 8 V
GE
V
= 8 V
GE
100
50
0
50
0
0
0.5
1
1.5
2
0
0.5
1
1.5
2
2.5
3
V
CE
, Collector−Emitter Voltage (V)
V
CE
, Collector−Emitter Voltage (V)
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
(TJ = 255C)
(TJ = 1755C)
150
125
100
75
300
250
200
150
100
50
Common Emitter
Common Emitter
V
= 20 V
V
= 15 V
CE
GE
T = 25°C
T = 25°C
J
J
T = 175°C
T = 175°C
J
J
50
25
0
0
0
2
4
6
8
10
0
0.5
1
1.5
2
2.5
3
V
CE
, Collector−Emitter Voltage (V)
V
GE
, Gate−Emitter Voltage (V)
Figure 3. Typical Saturation Voltage Characteristics
Figure 4. Typical Transfer Characteristics
2.0
Common Emitter
GE
V
= 15 V
10000
1000
C
C
ies
150 A
75 A
1.5
1.0
0.5
oes
100
10
I
C
= 37.5 A
C
res
Common Emitter
= 0 V, f = 1 MHz
V
GE
1
10
, Collector−Emitter Voltage (V)
CE
30
−100
−50
0
50
100
150
200
T , Junction Temperature (°C)
V
J
Figure 5. Saturation Voltage vs. Junction Temperature
Figure 6. Capacitance Characteristics
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4
FGHL75T65LQDTL4
TYPICAL CHARACTERISTICS (continued)
1000
15
12
9
Common Emitter
= 75 A
I
C
10 ms
100
300 V
V
CC
= 200 V
DC
100 ms
1 ms
400 V
10
6
10 ms
*Notes:
1
3
1. T = 25°C
J
2. T = 175°C
J
3. Single Pulse
0
0.1
0
200
400
Q , Gate Charge (nC)
600
800
1
10
100
1000
V
CE
, Collector−Emitter Voltage (V)
g
Figure 7. Gate Charge Characteristics
Figure 8. SOA Characteristics
10000
1000
100
t
t
d(off)
d(on)
100
Common Emitter
CC
Common Emitter
= 400 V, V = 15 V
V
I
= 400 V, V = 15 V
= 75 A
GE
V
CC
GE
t
f
t
r
C
I
= 75 A
C
T = 25°C
J
T = 25°C
J
T = 175°C
J
T = 175°C
J
10
10
0
10
20
30
40
50
0
10
20
30
40
50
R , Gate Resistance (W)
g
R , Gate Resistance (W)
g
Figure 9. Turn−On Characteristics vs. Gate
Figure 10. Turn−Off Characteristics vs. Gate
Resistance
Resistance
1000
100
10
1000
100
10
t
d(off)
t
r
t
d(on)
t
f
Common Emitter
= 400 V, V = 15 V
Common Emitter
= 400 V, V = 15 V
V
V
CC
G
GE
CC
G
GE
R
= 4.7 W
R
= 4.7 W
T = 25°C
T = 25°C
J
J
J
T = 175°C
T = 175°C
J
1
0
50
100
150
200
0
50
100
150
200
I , Collector Current (A)
C
I , Collector Current (A)
C
Figure 11. Turn−On Characteristics vs. Collector
Figure 12. Turn−Off Characteristics vs. Collector
Current
Current
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5
FGHL75T65LQDTL4
TYPICAL CHARACTERISTICS (continued)
Common Emitter
= 400 V, V = 15 V
V
CC
GE
E
off
I
= 75 A
10
C
10
E
off
T = 25°C
J
T = 175°C
J
E
on
1
Common Emitter
V
= 400 V, V = 15 V
CC
G
GE
E
on
R
= 4.7 W
T = 25°C
J
T = 175°C
J
0.1
1
0
0
50
100
150
200
10
20
30
40
50
R , Gate Resistance (W)
g
I , Collector Current (A)
C
Figure 13. Switching Loss vs. Gate Resistance
Figure 14. Switching Loss vs. Collector Current
50
45
40
35
30
25
20
15
10
5
300
250
200
150
100
50
Common Emitter
T = 25°C
J
T = 175°C
J
V
F
= 400 V
R
I = 75 A
T = 25°C
J
T = 175°C
J
0
0
0
1
2
3
4
5
400
600
800
1000
1200
1400
1600
di /dt, Diode Current Slop (A/ms)
F
V , Forward Voltage (V)
F
Figure 15. Forward Characteristics
Figure 16. Reverse Recovery Current
250
200
150
100
50
3500
3000
2500
2000
1500
1000
500
V
F
= 400 V
R
I = 75 A
T = 25°C
J
T = 175°C
J
V
F
= 400 V
R
I = 75 A
T = 25°C
J
T = 175°C
J
0
400
0
400
600
800
1000
1200
1400
1600
600
800
1000
1200
1400
1600
di /dt, Diode Current Slop (A/ms)
F
di /dt, Diode Current Slop (A/ms)
F
Figure 17. Reverse Recovery Time
Figure 18. Stored Charge
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6
FGHL75T65LQDTL4
TYPICAL CHARACTERISTICS (continued)
1
0.1
P
DM
0.5
t
1
t
2
0.2
Duty Factor, D = t /t
Peak T = P x Z + T
1
q
2
jc
0.1
j
dm
c
R
R2
1
0.05
0.01
0.02
0.01
C = t / R
2
C = t / R
1
Single Pulse
2
2
1
1
i:
1
2
3
4
5
6
ri[K/W]:
0.0072
0.0163
0.0325
0.0503
0.0821
0.0195
t[s]:
4.325E−6 3.409E−5 1.991E−4 1.529E−3 7.490E−3 2.690E−2
0.001
−5
−4
−6
−3
−2
−1
0
1
10
10
10
10
10
10
10
10
Rectangular Pulse Duration (s)
Figure 19. Transient Thermal Impedance of IGBT
1
0.1
P
DM
0.5
t
1
t
2
0.2
Duty Factor, D = t /t
Peak T = P x Z + T
1
q
2
jc
0.1
j
dm
c
R
R2
0.05
1
0.02
0.01
0.01
Single Pulse
C = t / R
2
C = t / R
1
2
2
1
1
i:
1
2
3
4
5
6
ri[K/W]:
0.0153
0.0393
0.0683
0.0787
0.1382
0.0363
t[s]:
2.487E−6 2.417E−5 3.457E−4 1.655E−3 1.554E−2 4.687E−2
0.001
−5
−4
−6
−3
−2
−1
0
1
10
10
10
10
10
10
10
10
Rectangular Pulse Duration (s)
Figure 20. Transient Thermal Impedance of Diode
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−4LD
CASE 340CJ
ISSUE A
DATE 16 SEP 2019
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13852G
TO−247−4LD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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