FGHL75T65MQD [ONSEMI]
IGBT - 650 V 75 A FS4 medium switching speed IGBT;
| 型号： | FGHL75T65MQD |
| 厂家： | 
ONSEMI |
| 描述： | IGBT - 650 V 75 A FS4 medium switching speed IGBT 双极性晶体管 |
| 文件： | 总9页 (文件大小：342K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Field Stop Trench IGBT
650 V, 75 A
FGHL75T65MQD
Field stop 4th generation mid speed IGBT technology and Full
current rated copak Diode technology.
Features
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• Maximum Junction Temperature: T = 175°C
J
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
BV
V
TYP
I MAX
C
CES
CE(sat)
650 V
1.45 V
75 A
• Low Saturation Voltage: V
= 1.45 V (Typ.) @ I = 75 A
C
CE(sat)
• 100% of the Parts are Tested for I (Note 2)
LM
C
E
• Smooth & Optimized Switching
• Tight Parameter Distribution
• RoHS Compliant
G
Typical Applications
• Solar Inverter
• UPS, ESS
• PFC, Converters
MAXIMUM RATINGS
Parameter
Collector−to−Emitter Voltage
Gate−to−Emitter Voltage
Symbol
Value
650
20
Unit
V
G
V
CES
V
GES
V
GES
C
E
V
TO−247 LONG LEADS
Transient Gate−to−Emitter Voltage
Collector Current (Note 1)
30
V
CASE 340CX
T
C
= 25°C
I
C
80
A
T
C
= 100°C
75
MARKING DIAGRAM
Pulsed Collector Current (Note 2)
Pulsed Collector Current (Note 3)
Diode Forward Current (Note 1)
I
300
300
80
A
A
A
LM
I
CM
T
T
= 25°C
= 65°C
I
F
C
$Y&Z&3&K
FGHL
75T65MQD
75
C
Pulsed Diode Maximum Forward Current
I
300
A
A
FM(2)
Non−Repetitive Forward Surge Current
I
F,SM
(Half−Sine Pulse, t = 8.3 ms, T = 25°C)
255
225
p
C
(Half−Sine Pulse, t = 8.3 ms, T = 150°C)
p
C
Maximum Power Dissipation
T
= 25°C
P
375
188
W
C
D
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= 3−Digit Date Code
T
C
= 100°C
Operating Junction and Storage Temperature
Range
T , T
J
−55 to
+175
°C
°C
stg
= 2−Digit Lot Traceability Code
FGHL75T65MQD = Specific Device Code
Maximum Lead Temperature for Soldering
Purposes (1/8″ from case for 5 s)
T
260
L
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Value limit by bond wire
Device
Package
Shipping
FGHL75T65MQD TO−247−3L
30 Units / Rail
2. V = 400 V, V = 15 V, I = 300 A, R = 14 W, Inductive Load, 100% Tested
CC
GE
C
G
3. Repetitive rating: Pulse width limited by max. junction temperature
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
February, 2020 − Rev. 1
FGHL75T65MQD/D
FGHL75T65MQD
Table 1. THERMAL CHARACTERISTICS
Parameter
Symbol
Value
0.40
0.6
Unit
Thermal Resistance Junction−to−Case, for IGBT
Thermal Resistance Junction−to−Case, for Diode
Thermal Resistance Junction−to−Ambient
R
θJC
R
θJC
R
θJA
°C/W
40
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
GE
V
GE
V
GE
V
GE
= 0 V, I = 1 mA
BV
CES
650
−
−
0.6
−
−
V
V/°C
mA
C
Temperature Coefficient of
Breakdown Voltage
= 0 V, I = 1 mA
DBV
/
−
C
CES
J
DT
Collector−emitter cut−off current,
gate−emitter short−circuited
= 0 V, V = 650 V
I
−
250
400
CE
CES
Gate leakage current, collector−emit-
ter short−circuited
= 20 V, V = 0 V
I
−
−
nA
CE
GES
ON CHARACTERISTIC
Gate−emitter threshold voltage
Collector−emitter saturation voltage
V
= V , I = 75 mA
V
GE(th)
3.0
4.5
6.0
V
V
GE
CE
C
V
GE
V
GE
= 15 V, I = 75 A
V
CE(sat)
−
−
1.45
1.65
1.8
−
C
= 15 V, I = 75 A, T = 175°C
C
J
DYNAMIC CHARACTERISTIC
Input capacitance
V
= 30 V, V = 0 V, f = 1 MHz
C
−
−
−
−
−
−
4913
131
15
−
−
−
−
−
−
pF
nC
CE
CE
GE
ies
Output capacitance
C
oes
Reverse transfer capacitance
Gate charge total
C
res
V
= 400 V, I = 75 A, V = 15 V
Q
145
25
C
GE
g
Gate−to−Emitter charge
Gate−to−Collector charge
Q
Q
ge
gc
33
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
T
= 25°C
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
29
29
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
C
d(on)
V
= 400 V, I = 37.5 A
CC
C
t
r
R
V
= 10 W
G
= 15 V
GE
Turn−off delay time
Fall time
t
193
47
d(off)
Inductive Load
t
f
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
E
on
E
off
0.75
0.48
1.22
33
mJ
ns
E
ts
T
= 25°C
t
t
C
d(on)
V
= 400 V, I = 75 A
CC
C
t
r
60
R
V
= 10 W
G
= 15 V
GE
Turn−off delay time
Fall time
176
76
d(off)
Inductive Load
t
f
Turn−on switching loss
Turn−off switching loss
Total switching loss
E
on
E
off
1.94
1.55
3.49
mJ
E
ts
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2
FGHL75T65MQD
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
T
= 175°C
t
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
27
31
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
C
d(on)
V
= 400 V, I = 37.5 A
CC
C
t
r
R
V
= 10 W
G
= 15 V
GE
Turn−off delay time
Fall time
214
66
d(off)
Inductive Load
t
f
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
E
on
E
off
1.49
0.72
2.21
31
mJ
ns
E
ts
T
= 175°C
t
t
C
d(on)
V
= 400 V, I = 75 A
CC
C
t
r
61
R
V
= 10 W
G
= 15 V
GE
Turn−off delay time
Fall time
191
85
d(off)
Inductive Load
t
f
Turn−on switching loss
Turn−off switching loss
Total switching loss
DIODE CHARACTERISTIC
Diode Forward Voltage
E
on
E
off
3.23
1.90
5.12
mJ
E
ts
I = 75 A, T = 25°C
V
−
−
2.3
1.9
2.6
−
V
F
C
C
FM
I = 75 A, T = 175°C
F
Reverse Recovery Energy
I = 75 A, dl /dt = 200 A/ms, T = 175°C
E
−
−
49
−
−
mJ
F
F
C
rec
Diode Reverse Recovery Time
I = 75 A, dl /dt = 200 A/ms, T = 25°C
T
rr
36
204
ns
F
F
C
I = 75 A, dl /dt = 200 A/ms, T = 175°C
F
F
C
Diode Reverse Recovery Charge
I = 75 A, dl /dt = 200 A/ms, T = 25°C
Q
rr
−
51
990
−
nC
F
F
C
I = 75 A, dl /dt = 200 A/ms, T = 175°C
F
F
C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
FGHL75T65MQD
TYPICAL CHARACTERISTICS
300
300
240
180
120
60
TC
20V
15V
20V
15V
12V
= 1755C
TC
= 255C
240
180
120
60
12V
10V
10V
VGE = 8V
VGE = 8V
0
0
0
1
2
3
4
5
0
1
2
3
4
5
Collector−Emitter Voltage, VCE [V]
Collector−Emitter Voltage, VCE [V]
Figure 1. Typical Output Characteristics (255C)
Figure 2. Typical Output Characteristics
(1755C)
300
240
180
120
60
3.0
Common Emitter
VGE = 15V
Common Emitter
VGE = 15V
TC
= 255C
TC
= 1755C
150A
2.0
1.0
75A
IC = 40A
0
0
1
2
3
4
5
−100
−50
0
50
100
150
200
Collector−Emitter Voltage, VCE [V]
Collector−Emitter Case Temperature, TC [5C]
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
16
12
8
20
16
12
8
Common Emitter
Common Emitter
TC
= 255C
T
C = 1755C
150A
75A
150A
75A
4
4
I
C = 40A
I
C = 40A
0
0
4
4
8
12
16
20
8
12
16
20
Gate−Emitter Voltage, VGE [V]
Gate−Emitter Voltage, VGE [V]
Figure 5. Saturation Voltage vs. VGE (255C)
Figure 6. Saturation Voltage vs. VGE (1755C)
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4
FGHL75T65MQD
TYPICAL CHARACTERISTICS
15
Common Emitter
TC
= 255C
10000
1000
100
10
Cies
300V
400V
VCC = 200V
12
9
Coes
6
Cres
3
Common Emitter
V
GE = 0V, f = 1MHz
TC
= 255C
1
0
1
10
Collector−Emitter Voltage, VCE [V]
30
0
30
60
90
120
150
Gate Charge, Qg [nC]
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
1000
100
10
200
td(off)
tr
tf
td(on)
Common Emitter
Common Emitter
VCC = 400V, VGE = 15V
VCC = 400V, VGE = 15V,
IC = 75A
TC
I
C = 75A
TC
TC
= 255C
= 255C
TC
= 1755C
= 1755C
20
5
15
25
35
45
50
5
15
25
35
45
50
Gate Resistance, Rg [ W ]
Gate Resistance, R g [W ]
Figure 9. Turn−On Characteristics vs. Gate
Figure 10. Turn−Off Characteristics vs. Gate
Resistance
Resistance
1000
100
10
1000
Common Emitter
V
CC = 400V, VGE = 15V,
R
G = 10 W
TC
TC
= 255C
td(off)
= 1755C
100
10
1
tr
tf
Common Emitter
td(on)
VCC = 400V, VGE = 15V,
RG = 10 W
TC
TC
= 255C
= 1755C
0
30
60
90
120
150
0
30
60
90
120
150
Collector Current, IC [A]
Collector Current, IC [A]
Figure 11. Turn−On Characteristics vs.
Figure 12. Turn−Off Characteristics vs.
Collector Current
Collector Current
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5
FGHL75T65MQD
TYPICAL CHARACTERISTICS
10000
10000
Eon
Eon
1000
100
Eoff
Common Emitter
Common Emitter
VCC = 400V, VGE = 15V,
VCC = 400V, VGE = 15V,
IC = 75A
RG = 10 W
TC
TC
= 255C
TC
TC
= 255C
Eoff
= 1755C
= 1755C
10
1000
0
30
60
90
120
150
50
5
15
25
35
45
Collector Current, IC [A]
Gate Resistance, Rg [W ]
Figure 13. Switching Loss vs. Gate Resistance
Figure 14. Switching Loss vs. Collector
Current
300
16
TC
= 255C
Common Emitter
TC
= 255C
TC = 1755C
TC
= 755C
100
TC
= 1755C
12
di/dt = 200A/uS
TC =1755C
TC =255C
8
di/dt = 100A/uS
10
4
0
di/dt = 100A/uS
di/dt = 200A/uS
TC =755C
1
0
30
60
90
120
150
0
1
2
3
4
5
Forward Current, IF [A]
Forward Voltage, VF [V]
Figure 15. Forward Characteristics
Figure 16. Reverse Recovery Current
350
280
210
140
70
1500
TC = 255C
TC
= 255C
TC = 1755C
TC = 1755C
1200
900
600
300
0
di/dt = 200A/us
di/dt = 100A/uS
di/dt = 200A/uS
di/dt = 100A/us
0
0
30
60
90
120
150
0
30
60
90
120
150
Forward Current, IF [A]
Forward Current, IF [A]
Figure 17. Reverse Recovery Time
Figure 18. Stored Charge
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6
FGHL75T65MQD
TYPICAL CHARACTERISTICS
1
0.1
0.5
0.2
0.1
0.05
0.02
0.01
0.01
PDM
t1
Single Pulse
t2
Duty Factor, D = t1/t2
Peak T = Pdm x Zthjc + Tc
j
0.001
−5
−4
−3
−2
−1
0
1
0.0 001
0.0001
10
0. 01
10
0.01
10
0.1
10
1
10
10
10
10
Rectangular Pulse Duration [sec]
Figure 19. Transient Thermal Impedance of IGBT
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
PDM
Single Pulse
t1
t2
Duty Factor, D = t1/t2
Peak T = Pdm x Zthjc + Tc
j
0.001
−5
−4
−3
−2
−1
1
0.00001
0.0001
10
0.001
10
0.01
10
0.1
10
10
10
10
10
10
Rectangular Pulse Duration [sec]
Figure 20. Transient Thermal Impedance of Diode
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
DATE 06 JUL 2020
GENERIC
MARKING DIAGRAM*
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
XXXXXXXXX
AYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON93302G
TO−247−3LD
PAGE 1 OF 1
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相关型号：
FGHL75T65MQDTL4
IGBT - 650 V 75 A FS4 medium switching speed IGBT with full rated copack diode
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