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FGI3236-F085 [ONSEMI]

IGBT，360V，27A，1.32V，320mJ，TO-262，EcoSPARK® I，N 沟道点火;
FGI3236-F085
型号： FGI3236-F085
厂家： ONSEMI    ONSEMI
描述：

IGBT，360V，27A，1.32V，320mJ，TO-262，EcoSPARK® I，N 沟道点火

汽车点火 栅 双极性晶体管
文件： 总10页 (文件大小：514K)
中文：  中文翻译
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DATA SHEET  
www.onsemi.com  
EcoSPARKꢀ Ignition IGBT  
20 mJ, 360 V, N−Channel Ignition IGBT  
FGB3236-F085,  
FGI3236-F085  
2
D PAK−3  
I2PAK (TO−262 3 LD)  
CASE 418AJ  
CASE 418AV  
Features  
2
• Industry Standard D PAK Package  
MARKING DIAGRAM  
• SCIS Energy = 330 mJ at T = 25°C  
J
1 Gate  
2 Collector  
3 Emitter  
• Logic Level Gate Drive  
AYWW  
XXX  
XXXXXG  
• AEC−Q101 Qualified and PPAP Capable  
• RoHS Compliant  
4 Collector  
Applications  
A
Y
WW  
XXXX  
G
= Assembly Location  
= Year  
= Work Week  
= Device Code  
= Pb−Free Package  
• Automotive Ignition Coil Driver Circuits  
• Coil On Plug Applications  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Collector (Flange)  
Symbol  
Parameter  
Value  
Units  
BV  
Collector to Emitter Breakdown Voltage  
C
360  
V
CER  
(I = 1 mA)  
$Y&Z&3&K  
FGI  
3236  
BV  
Emitter to Collector Voltage − Reverse  
24  
320  
160  
44  
V
mJ  
mJ  
A
ECS  
Battery Condition (I = 10 mA)  
C
E
Self Clamping Inductive Switching Energy  
SCIS25  
(I  
SCIS  
= 14.7 A, L = 3.0 mHy, T = 25°C)  
J
Gate  
Emitter  
= onsemi Logo  
= Assembly Plant Code  
= Numeric Date Code  
= Lot Code  
E
Self Clamping Inductive Switching Energy  
(I = 10.4 A, L = 3.0 mHy, T = 150°C)  
SCIS150  
SCIS  
J
$Y  
&Z  
&3  
&K  
I
Collector Current Continuous  
at V = 4.0 V, T = 25°C  
C25  
GE  
C
I
Collector Current Continuous  
at V = 4.0 V, T = 110°C  
27  
A
C110  
FGI3236 = Specific Device Code  
GE  
C
V
Gate to Emitter Voltage Continuous  
10  
187  
V
W
GEM  
P
Power Dissipation Total, at T = 25°C  
D
C
SYMBOL  
Power Dissipation Derating, for T > 25°C  
1.25  
W/°C  
°C  
C
COLLECTOR  
T
J
Operating Junction Temperature Range  
Storage Junction Temperature Range  
−40 to +175  
−40 to +175  
300  
T
T
°C  
STG  
R
1
T
L
Max. Lead Temperature for Soldering  
(Leads at 1.6 mm from case for 10 s)  
°C  
GATE  
R
2
Max. Lead Temperature for Soldering  
(Package Body for 10 s)  
260  
4
°C  
PKG  
ESD  
Electrostatic Discharge Voltage  
at 100 pF, 1500 W  
kV  
EMITTER  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 3  
of this data sheet.  
© Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
July, 2022 − Rev. 2  
FGB3236−F085/D  
FGB3236−F085, FGI3236−F085  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)  
A
Symbol  
Parameter  
Test Conditions  
Min  
Typ  
Max  
Units  
OFF STATE CHARACTERISTICS  
BV  
BV  
BV  
Collector to Emitter Breakdown  
Voltage  
I
= 2 mA, V = 0 V,  
GE  
330  
363  
390  
V
CER  
CE  
GE  
R
= 1 kW, see Figure 15  
T = −40 to 150°C  
J
Collector to Emitter Breakdown  
Voltage  
I
= 10 mA, V = 0 V,  
350  
30  
378  
410  
V
V
CES  
CE  
GE  
R
= 0,  
GE  
T = −40 to 150°C  
J
Emitter to Collector Breakdown  
Voltage  
I
= −75 mA, V = 0 V,  
−
−
ECS  
CE  
GE  
T = 25°C  
J
BV  
I
Gate to Emitter Breakdown Voltage  
Collector to Emitter Leakage Current  
I
=
2 mA  
12  
−
14  
−
−
25  
1
V
GES  
GES  
V
= 250 V,  
T = 25°C  
J
mA  
mA  
mA  
CES  
CES  
see Figure 11  
T = 150°C  
J
−
−
I
Emitter to Collector Leakage Current  
V
= 24 V,  
T = 25°C  
J
−
−
1
ECS  
EC  
see Figure 11  
T = 150°C  
J
−
−
40  
−
R
R
Series Gate Resistance  
−
120  
−
W
W
1
2
Gate to Emitter Resistance  
10K  
30K  
ON STATE CHARACTERISTICS  
V
V
V
Collector to Emitter Saturation  
Voltage  
I
= 6 A, V = 4 V, T = 25°C,  
−
−
1.14  
1.32  
1.61  
−
1.4  
1.7  
2.05  
−
V
V
V
A
CE(SAT)  
CE(SAT)  
CE(SAT)  
CE(ON)  
CE  
GE  
C
see Figure 3  
I = 10 A, V = 4.5 V, T = 150°C,  
CE  
Collector to Emitter Saturation  
Voltage  
GE  
C
see Figure 4  
Collector to Emitter Saturation  
Voltage  
I
= 15 A, V = 4.5 V, T = 150°C  
−
CE  
GE  
C
I
Collector to Emitter On State Current  
V
= 5 V, V = 5 V  
50  
GE  
CE  
DYNAMIC CHARACTERISTICS  
Q
Gate Charge  
I
= 10 A, V = 12 V, V = 5 V,  
−
20  
−
nC  
V
G(ON)  
CE  
CE  
GE  
see Figure 14  
V
Gate to Emitter Threshold Voltage  
I
= 1 mA,  
T
T
= 25°C  
1.3  
0.75  
−
1.6  
1.1  
2.6  
2.2  
1.8  
−
GE(TH)  
CE  
C
V
= V  
,
CE  
GE  
= 150°C  
see Figure 10  
C
V
Gate to Emitter Plateau Voltage  
V
= 12 V, I = 10 A  
V
GEP  
CE  
CE  
SWITCHING CHARACTERISTICS  
t
Current Turn−On Delay  
Time−Resistive  
V
V
J
= 14 V, R = 1 W,  
−
0.65  
4
ms  
d(ON)R  
CE  
GE  
L
= 5 V, R = 1 kW,  
G
T = 25°C, see Figure 12  
t
rR  
Current Rise Time−Resistive  
−
−
1.7  
5.4  
7
t
Current Turn−Off Delay  
Time−Inductive  
V
CE  
V
GE  
= 300 V, L = 500 mHy,  
15  
d(OFF)L  
= 5 V, R = 1 kW,  
G
T = 25°C, see Figure 12  
J
t
fL  
Current Fall Time−Inductive  
−
−
1.64  
15  
SCIS  
Self Clamped Inductive Switching  
T = 25°C, L = 3.0 mHy, I = 14.7 A,  
−
320  
mJ  
J
CE  
V
GE  
= 5 V, R = 1 kW,  
G
see Figures 1 & 2  
THERMAL CHARACTERISTICS  
Thermal Resistance Junction to Case All Packages  
R
−
−
0.8  
°C/W  
q
JC  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
www.onsemi.com  
2
FGB3236−F085, FGI3236−F085  
PACKAGE MARKING AND ORDERING INFORMATION  
†
Device  
Marking  
FGB3236  
FGB3236  
FGI3236  
Package  
Shipping  
2
FGB3236−F085  
FGB3236−F085C  
FGI3236−F085  
D PAK (Pb−Free)  
800 units / Tape & Reel  
800 units / Tape & Reel  
400 units / Tube  
2
D PAK (Pb−Free)  
I2PAK (TO−262 3 LD) (Pb−Free)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
www.onsemi.com  
3
FGB3236−F085, FGI3236−F085  
TYPICAL PERFORMANCE CHARACTERISTICS  
35  
35  
30  
25  
20  
15  
10  
5
RG = 1KW, VGE = 5V  
RG = 1K W , VGE = 5V  
30  
25  
20  
T
J = 25oC  
T
J = 25o  
C
15  
10  
5
TJ = 150 o  
C
TJ = 150 o  
C
Voltages of <410V  
SCIS Curves valid for V  
clamp  
Voltages of <410V  
SCIS Curves valid for V  
clamp  
0
0
0
20  
40  
60  
80  
, TIME IN CLAMP ( S)  
100 120 140 160  
0
2
4
6
8
10  
L, INDUCTANCE (mHy)  
tCLP  
m
Figure 1. Self Clamped Inductive Switching  
Current vs. Time in Clamp  
Figure 2. Self Clamped Inductive Switching  
Current vs. Inductance  
1.25  
1.45  
ICE = 10A  
ICE = 6A  
1.20  
1.15  
1.10  
1.05  
1.00  
1.40  
1.35  
1.30  
1.25  
1.20  
V
GE = 3.7V  
V
GE = 3.7V  
VGE = 4.0V  
V
GE = 4.0V  
VGE = 8V  
VGE = 4.5V  
V
GE = 5V  
V
GE = 5V  
VGE = 4.5V  
V
GE = 8V  
−75 −50 −25  
0
25 50 75 100 125 150 175  
−75 −50 −25  
0
25 50 75 100 125 150 175  
J, JUNCTION TEMPERTURE (oC)  
J, JUNCTION TEMPERTURE (oC)  
T
T
Figure 3. Collector to Emitter On−State Voltage  
Figure 4. Collector to Emitter On−State Voltage  
vs. Junction Temperature  
vs. Junction Temperature  
50  
50  
VGE = 8.0V  
VGE = 8.0V  
VGE = 5.0V  
VGE = 5.0V  
40  
30  
20  
10  
0
40  
30  
20  
10  
0
V
GE = 4.5V  
VGE = 4.0V  
GE = 3.7V  
V
GE = 4.5V  
VGE = 4.0V  
GE = 3.7V  
V
V
TJ = −40oC  
TJ = 25 oC  
0
1
2
3
4
0
1
2
3
4
VCE, COLLECTOR TO EMITTER VOLTAGE (V)  
VCE, COLLECTOR TO EMITTER VOLTAGE (V)  
Figure 5. Collector to Emitter On−State Voltage  
Figure 6. Collector to Emitter On−State Voltage  
vs. Collector Current  
vs. Collector Current  
www.onsemi.com  
4
FGB3236−F085, FGI3236−F085  
TYPICAL PERFORMANCE CHARACTERISTICS (continued)  
50  
40  
30  
20  
10  
0
50  
VGE = 8.0V  
VGE = 5.0V  
PULSE DURATION = 80 ms  
DUTY CYCLE = 0.5% MAX  
40  
30  
20  
10  
0
V
GE = 4.5V  
VCE = 5V  
VGE = 4.0V  
VGE = 3.7V  
T
J = 175 o  
C
T
J = 25 o  
C
TJ = −40oC  
TJ = 175 oC  
0
1
2
3
4
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
VCE, COLLECTOR TO EMITTER VOLTAGE (V)  
VGE, GATE TO EMITTER VOLTAGE (V)  
Figure 7. Collector to Emitter On−State Voltage  
Figure 8. Transfer Characteristics  
vs. Collector Current  
50  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGE = 4.0V  
= VGE  
VCE  
CE = 1mA  
I
40  
30  
20  
10  
0
25  
50  
75  
100  
125  
150  
175  
−50 −25  
0
25 50  
75  
100 125 150 175  
C, CASE TEMPERATURE(oC)  
T
J, JUNCTION TEMPERATURE(oC)  
T
Figure 9. DC Collector Current vs. Case  
Temperature  
Figure 10. Threshold Voltage vs. Junction  
Temperature  
50000  
14  
ICE = 6.5A, V GE = 5V, R G = 1KΩ  
10000  
1000  
100  
10  
12  
10  
8
VECS = 24V  
Resistive t OFF  
Inductive t  
OFF  
6
VCES = 300V  
4
Resistive t ON  
1
2
VCES = 250V  
0.1  
−50 −25  
0
25  
0
25  
50  
75 100 125 150 175  
50  
75  
100  
125  
150  
175  
J, JUNCTION TEMPERATURE (oC)  
J, JUNCTION TEMPERATURE (oC)  
T
T
Figure 11. Leakage Current vs. Junction  
Temperature  
Figure 12. Switching Time vs. Junction  
Temperature  
www.onsemi.com  
5
FGB3236−F085, FGI3236−F085  
TYPICAL PERFORMANCE CHARACTERISTICS (continued)  
2000  
1600  
1200  
800  
400  
0
10  
ICE = 10A, T J = 25o  
C
f = 1MHz  
V
GE = 0V  
8
6
4
2
0
VCE = 6V  
CIES  
VCE = 12V  
CRES  
COES  
0
5
10  
15  
20  
25  
0
10  
20  
30  
40  
50  
DS, DRAIN TO SOURCE VOLTAGE (V)  
V
, GATE CHARGE(nC)  
Qg  
Figure 13. Capacitance vs. Collector to Emitter  
Voltage  
Figure 14. Gate Charge  
380  
I
CER = 10mA  
370  
360  
350  
TJ = −40oC  
TJ = 25o  
C
T
J = 175 o  
C
6000  
10  
100  
, SERIES GATE RESISTANCE (  
1000  
)
RG  
W
Figure 15. Break Down Voltage vs. Series Gate Resistance  
2
1
DUTY CYCLE − DESCENDING ORDER  
D = 0.50  
0.20  
0.10  
0.05  
0.02  
0.1  
P
DM  
0.01  
t
1
0.01  
t
2
NOTES:  
DUTY FACTOR: D = t  
/t  
1
2
PEAK T = P  
x Z  
x R  
+ T  
qJC  
qJC  
J
DM  
C
SINGLE PULSE  
1E−3  
10−5  
10−4  
10−3  
10−2  
10−1  
1
t, RECTANGULAR PULSE DURATION(s)  
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case  
www.onsemi.com  
6
FGB3236−F085, FGI3236−F085  
TEST CIRCUIT AND WAVEFORMS  
Figure 17. Inductive Switching Test Circuit  
Figure 18. tON and tOFF Switching Test Circuit  
Figure 19. Energy Test Circuit  
Figure 20. Energy Waveforms  
ECOSPARK is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States  
and/or other countries.  
www.onsemi.com  
7
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
D2PAK−3 (TO−263, 3−LEAD)  
CASE 418AJ  
ISSUE F  
DATE 11 MAR 2021  
SCALE 1:1  
XXXXXX = Specific Device Code  
A
= Assembly Location  
WL  
Y
= Wafer Lot  
= Year  
GENERIC MARKING DIAGRAMS*  
WW  
W
M
G
AKA  
= Work Week  
= Week Code (SSG)  
= Month Code (SSG)  
= Pb−Free Package  
= Polarity Indicator  
XX  
AYWW  
XXXXXXXXG  
AKA  
XXXXXXXXG  
AYWW  
XXXXXX  
XXYMW  
XXXXXXXXX  
AWLYWWG  
*This information is generic. Please refer to  
device data sheet for actual part marking.  
Pb−Free indicator, “G” or microdot “ G”,  
may or may not be present. Some products  
may not follow the Generic Marking.  
IC  
Standard  
Rectifier  
SSG  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
98AON56370E  
D2PAK−3 (TO−263, 3−LEAD)  
PAGE 1 OF 1  
DESCRIPTION:  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2018  
www.onsemi.com  
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
I2PAK (TO−262 3 LD)  
CASE 418AV  
ISSUE A  
DATE 30 AUG 2022  
GENERIC  
MARKING DIAGRAM*  
AYWWZZ  
XXXXXXXXX  
XXXXXXXXX  
XXXX = Specific Device Code  
A
Y
= Assembly Location  
= Year  
WW = Work Week  
ZZ  
= Assembly Lot Code  
*This information is generic. Please refer to  
device data sheet for actual part marking.  
Pb−Free indicator, “G” or microdot “G”, may  
or may not be present. Some products may  
not follow the Generic Marking.  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON13814G  
I2PAK (TO−262 3 LD)  
PAGE 1 OF 1  
onsemi and  
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves  
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular  
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation  
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
onsemi,  
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates  
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.  
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any  
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the  
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use  
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products  
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information  
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may  
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license  
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems  
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should  
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
ADDITIONAL INFORMATION  
TECHNICAL PUBLICATIONS:  
Technical Library: www.onsemi.com/design/resources/technical−documentation  
onsemi Website: www.onsemi.com  
ONLINE SUPPORT: www.onsemi.com/support  
For additional information, please contact your local Sales Representative at  
www.onsemi.com/support/sales  

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 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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SI9137DB

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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SI9137LG

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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SI9122E

 500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification Drivers

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