FGL12040WD [ONSEMI]
1200 V、40 A 场截止沟道 IGBT;
| 型号： | FGL12040WD |
| 厂家： | 
ONSEMI |
| 描述： | 1200 V、40 A 场截止沟道 IGBT 双极性晶体管 |
| 文件： | 总11页 (文件大小：1139K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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December 2014
FGL12040WD
1200 V, 40 A Field Stop Trench IGBT
Features
General Description
o
•
•
•
•
•
•
•
Maximum Junction Temperature : TJ = 150 C
Positive Temperature Co-efficient for Easy Parallel Operating
Using novel field stop IGBT technology, Fairchild’s new series of
nd
field stop 2 generation IGBTs offer the optimum performance
for welder applications where low conduction and switching
losses are essential.
Low Saturation Voltage: V
=2.3 V @ I = 40 A
CE(sat)
C
(1)
100% of The Parts Tested for I
LM
o
Short Circuit Ruggedness > 5 us @ 150 C
High Input Impedance
Applications
RoHS Compliant
•
Only for Welder
C
G
G
C
E
TO-264
E
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
Description
FGL12040WD
Unit
V
V
V
Collector to Emitter Voltage
1200
CES
Gate to Emitter Voltage
±25
V
GES
Transient Gate to Emitter Voltage
Collector Current
±30
V
o
@ T = 25 C
80
A
C
I
C
o
Collector Current
@ T = 100 C
40
A
C
o
100
A
I
I
(1)
(2)
Clamped Inductive Load Current
Pulsed Collector Current
@ T = 25 C
LM
C
100
A
CM
o
80
A
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
@ T = 25 C
C
I
F
o
40
100
A
@ T = 100 C
C
A
I
(2)
FM
o
5
us
W
W
SCWT (3)
@ T = 150 C
C
o
@ T = 25 C
391
C
P
D
o
@ T = 100 C
156
C
o
T
T
-55 to +150
-55 to +150
C
J
o
C
stg
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
o
T
300
C
L
Notes:
1. Vcc = 600 V, V = 15 V, I = 100 A, R = 23 Ω , Inductive Load
GE
C
G
2. Repetitive rating : Pulse width limited by max, junction temperature
3. V = 600 V, V = 12 V
CC
GE
©2014 Fairchild Semiconductor Corporation
FGL12040WD Rev. C1
1
www.fairchildsemi.com
Thermal Characteristics
Symbol
Parameter
FGL12040WD
Unit
o
R
R
R
(IGBT)
(Diode)
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
0.32
1.0
25
C/W
JC
JC
JA
o
C/W
o
C/W
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method Reel Size Tape Width Quantity
FGL12040WD
FGL12040WD
TO-264
Tube
-
-
25
Electrical Characteristics of the IGBT
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV
Collector to Emitter Breakdown Voltage
V
= 0 V, I = 250 uA
1200
-
-
-
-
V
CES
GE
C
∆BV
∆T
/
Temperature Coefficient of Breakdown V = 0 V, I = 250 uA
GE C
Voltage
o
CES
1.2
V/ C
J
I
I
Collector Cut-Off Current
G-E Leakage Current
V
V
= V
= V
, V = 0 V
-
-
-
-
250
uA
nA
CES
GES
CE
GE
CES
GE
, V = 0 V
±400
GES
CE
On Characteristics
V
G-E Threshold Voltage
I
I
= 40 mA, V = V
GE
4.8
-
6.4
2.3
8.0
2.9
V
V
GE(th)
C
CE
= 40 A, V = 15 V
GE
C
o
T
= 25 C
C
V
Collector to Emitter Saturation Voltage
CE(sat)
I
T
= 40 A, V = 15 V,
GE
C
-
2.5
-
V
o
= 150 C
C
Dynamic Characteristics
C
C
C
Input Capacitance
-
-
-
2800
105
60
-
-
-
pF
pF
pF
ies
V
= 30 V V = 0 V,
, GE
CE
Output Capacitance
oes
res
f = 1MHz
Reverse Transfer Capacitance
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Rise Time
-
-
-
-
-
-
-
-
-
-
-
-
-
-
45
70
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
d(on)
r
Turn-Off Delay Time
Fall Time
560
15
ns
d(off)
f
V
R
= 600 V, I = 40 A,
CC C
= 23 , V = 15 V,
G
GE
ns
o
Inductive Load, T = 25 C
C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
4.1
1.0
5.1
40
mJ
mJ
mJ
ns
on
off
ts
t
t
t
t
d(on)
r
65
ns
Turn-Off Delay Time
Fall Time
472
51
ns
d(off)
f
V
R
= 600 V, I = 40 A,
CC C
= 23 , V = 15 V,
G
GE
ns
o
Inductive Load, T = 150 C
C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
6.1
1.7
7.8
mJ
mJ
mJ
on
off
ts
©2014 Fairchild Semiconductor Corporation
FGL12040WD Rev. C1
2
www.fairchildsemi.com
Electrical Characteristics of the IGBT (Continued)
Symbol Parameter Test Conditions
Min.
Typ.
226
18
Max.
Unit
nC
Q
Q
Q
Total Gate Charge
-
-
-
-
-
-
g
V
V
= 600 V, I = 40 A,
= 15 V
CE
GE
C
Gate to Emitter Charge
Gate to Collector Charge
nC
ge
gc
155
nC
Electrical Characteristics of the DIODE
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
o
I = 40 A, T = 25 C
-
3.6
4.7
V
F
C
V
Diode Forward Voltage
FM
o
I = 40 A, T = 150 C
-
-
-
-
-
-
-
-
3.0
71
-
-
-
-
-
-
-
-
V
ns
A
F
C
t
I
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Reverse Recovery Energy
rr
V
= 600 V, I = 40 A,
F
R
6.8
o
rr
di /dt = 200 A/us, T = 25 C
F
C
Q
242
440
339
14
nC
uJ
ns
A
rr
E
rec
t
I
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
rr
rr
V
= 600 V, I = 40A,
R
F
o
di /dt = 200 A/us, T = 150 C
F
C
Q
2373
nC
rr
©2014 Fairchild Semiconductor Corporation
FGL12040WD Rev. C1
3
www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
Figure 5. Saturation Voltage vs. V
Figure 6. Saturation Voltage vs. V
GE
GE
©2014 Fairchild Semiconductor Corporation
FGL12040WD Rev. C1
4
www.fairchildsemi.com
Typical Performance Characteristics
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
Figure 9. Turn-on Characteristics vs.
Gate Resistance
Figure 10. Turn-off Characteristics vs.
Gate Resistance
Figure 11. Swithcing Loss vs.
Gate Resistance
Figure 12. Turn-on Characteristics vs.
Collector Current
©2014 Fairchild Semiconductor Corporation
FGL12040WD Rev. C1
5
www.fairchildsemi.com
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Collector Current
Figure 14. Swithcing Loss vs.
CollectorCurrent
Figure 15. Load Current vs. Frequency
Figure 16. SOA Characteristics
Figure 17. Forward Characteristics
Figure 18. Reverse Recovery Current
©2014 Fairchild Semiconductor Corporation
FGL12040WD Rev. C1
6
www.fairchildsemi.com
Typical Performance Characteristics
Figure 19. Reverse Recovery Time
Figure 20. Stored Charge
Figure 21. Transient Thermal Impedance of IGBT
PDM
t1
t2
Figure 22. Transient Thermal Impedance of Diode
PDM
t1
t2
©2014 Fairchild Semiconductor Corporation
7
www.fairchildsemi.com
FGL12040WD Rev. C1
Mechanical Dimensions
Figure 23. TO264, Molded, 3-Lead, Jedec Variation AA
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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©2014 Fairchild Semiconductor Corporation
FGL12040WD Rev. C1
8
www.fairchildsemi.com
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©2014 Fairchild Semiconductor Corporation
FGL12040WD Rev. C1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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