FGL35N120FTDTU [ONSEMI]

1200V，35A，场截止沟道 IGBT;


型号：	FGL35N120FTDTU
厂家：	ONSEMI
描述：	1200V，35A，场截止沟道 IGBT 栅双极性晶体管
文件：	总11页 (文件大小：2815K)
中文：	中文翻译
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2013 年 3 月

FGL35N120FTD

1200V、35A 场截止沟槽式 IGBT

特性

概述

•

场截止沟槽技术

飞兆半导体^®的 1200V 沟槽式 IGBT 系列采用先进的场截止沟

槽 IGBT 技术，为太阳能逆变器、UPS 和焊机等硬开关应用提

供最佳性能。

• 高速开关

• 低饱和电压：当 I_C= 35 A 时, VCE(sat)= 1.68 V

• 高输入阻抗

应用

太阳能逆变器，不间断电源，电焊机，功率因素校正

TO-264 3L

G C E

绝对最大额定值

符号

说明

额定值

1200

± 25

单位

V_CES

集电极-发射极之间电压

栅极－发射极间电压

集电极电流

V_CES

@ TC = 25^oC

@ TC = 100^oC

@ TC = 25^oC

集电极电流

I_{CM (1)}

I_F

集电极脉冲电流

105

二极管正向连续电流

最大功耗

@ TC = 100^oC

@ TC = 25^oC

@ TC = 100^oC

368

^oC

P_D

最大功耗

147

T_J

工作结温

-55 to +150

300

T_stg

T_L

存储温度范围

适用的最大引脚温度，距离外壳 1/8 英寸处焊接 5 秒

注意：

1:可重复的规格：脉宽受最大结温限制

热性能

符号

参数

额定值

0.34

0.9

单位

^oC/W

R_θJC(IGBT)

R_θJC(Diode)

R_θJA

结点-壳体的热阻

结至环境热阻

封装标识与定购信息

器件标识

设备

封装

规格

带宽

数量

FGL35N120FTD

FGL35N120FTDT

TO-264

IGBT 的电气特性 TC = 25°C，除非另有说明

符号

参数

测试条件

最小值典型值

最大值

单位

关断特性

^BVCES

^ICES

^IGES

集电极-发射极击穿电压

集电极切断电流

G-E 漏电流

V_GE= 0 V, I_Q= 250 μA

VCE = VQES, VGE = 0 V

VGE = VGES, VQE = 0 V

1200

±250

导通特性

^VGE(th)

G-E 阈值电压

IQ = 35 mA, VCE = VGE

I_C= 35 A, V_GE= 15 V

3.5

6.2

7.5

2.2

1.68

^VCE(sat)

集电极-发射极间饱和电压

I_C= 35 A, V_GE= 15 V, T_C=125^oC

2.0

动态特性

^Cies

^Coes

直流母线电容值

输出电容

5090

180

V_CE= 30 V V_GE= 0 V,

f = 1MHz '

^Cres

反向传输电容

开关特性

td(on)

导通延迟时间

上升时间

td(off)

关断延迟时间

下降时间

172

107

2.5

1.7

4.2

V_CC= 600 V, I_Q= 35 A,

R_G= 10Ω, V_GE= 15 V，电感负

载，T_C= 25^oC

Eon

Eoff

Ets

导通开关损耗

关断开关损耗

总开关损耗

td(on)

导通延迟时间

上升时间

td(off)

关断延迟时间

下降时间

180

146

3.1

2.1

5.2

210

V_CC= 600 V，I_C= 35 A，

R_G= 10Ω, V_GE= 15 V, Inductive

Load, T_C= 125^oC

Eon

Eoff

Ets

导通开关损耗

关断开关损耗

总开关损耗

总栅极电荷

VCE = 600 V, I_C= 35 A,

VGE = 15 V

Qge

Qgc

栅极－发射极间电荷

101

二极管的电气特性 TC - 25°C，除非另有说明

符号

参数

测试条件

最小值典型值

最大值单位

T_C= 25^oC

2.7

2.5

3.4

VFM

trr

二极管正向电压

I_F= 35 A

T_C= 125^oC

T_C= 25^oC

T_C= 125^oC

T_C= 25^oC

T_C= 125^oC

T_C= 25^oC

T_C= 125^oC

337

520

7.6

二极管反向恢复时间

二极管反向恢复峰值电流

二极管反向恢复电荷

I_F= 35 A,

di/dt = 200 A/μs

Irr

12.9

1292

3377

Qrr

典型性能特征

图 1典型输出特性

图 2.典型输出特性

图 3.典型饱和电压特性

图 4.转换特性

图 5.饱和电压与不同电流强度下壳温的关系

图 6.饱和电压与 VGE 的关系

典型性能特征

图 7.饱和电压与 VGE 的关系

图 8.负载电流与频率的关系

图 9.电容特性

图 10.栅极电荷特性

图 11.SOA 特性

图 12.开通特性与栅极电阻的关系

典型性能特征

图 13.关断特性与栅极电阻的关系

图 14.开通特性与集电极电流的关系

图 16.开关损耗与栅极电阻的关系

图 18.关断开关 SOA 特性

图 15.关断特性与集电极电流

图 17.开关损耗与集电极电流的关系

典型性能特征

图 19.正向特性

图 20.反向恢复电流

图 21.存储电荷

图 22.反向恢复时间

图 23.IGBT 的瞬态热阻抗

P_DM

t₁

t₂

机械尺寸

TO-264

* 前/后侧隔离电压： AC 2700V

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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