FGL60N100BNTDTU [ONSEMI]
1000V，60A，NPT 沟槽 IGBT;
| 型号： | FGL60N100BNTDTU |
| 厂家： | 
ONSEMI |
| 描述： | 1000V，60A，NPT 沟槽 IGBT 局域网 栅 双极性晶体管 功率控制 |
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March 2014
FGL60N100BNTD
1000 V, 60 A NPT Trench IGBT
Features
General Description
•
•
•
•
High Speed Switching
Using Fairchild's proprietary trench design and advanced NPT
technology, the 1000V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
easy parallel operation. This device offers the optimum perfor-
mance for hard switching application such as UPS, welder
applications.
Low Saturation Voltage: VCE(sat) = 2.5 V @ IC = 60 A
High Input Impedance
Built-in Fast Recovery Diode
Applications
•
UPS, Welder
C
G
TO-264 3L
G C E
E
Absolute Maximum Ratings
Symbol
Description
Ratings
1000
Unit
VCES
VGES
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
V
V
A
25
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
60
IC
Collector Current
42
200
15
A
A
A
ICM (1)
IF
Pulsed Collector Current
@ TC = 100oC
@ TC = 25oC
@ TC = 100oC
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
180
72
W
W
oC
oC
PD
TJ
-55 to +150
-55 to +150
Tstg
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
oC
TL
300
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(Diode)
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
0.69
Unit
oC/W
oC/W
oC/W
2.08
25
©2000 Fairchild Semiconductor Corporation
FGL60N100BNTD Rev. C2
1
www.fairchildsemi.com
Package Marking and Ordering Information
Part Number
Top Mark
Package Packing Method Reel Size Tape Width Quantity
FGL60N100BNTD FGL60N100BNTD
TO-264
Tube
N/A
N/A
30
Electrical Characteristics of the IGBT
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVCES
ICES
Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA
1000
-
-
-
-
1
V
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
-
-
mA
nA
IGES
±500
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 60 mA, VCE = VGE
IC =10 A, VGE = 15 V
IC = 60 A, VGE = 15 V,
4.0
-
5.0
1.5
7.0
1.8
V
V
VCE(sat)
Collector to Emitter Saturation Voltage
-
2.5
2.9
V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
-
-
-
6000
260
-
-
-
pF
pF
pF
V
CE = 10 V VGE = 0 V,
,
Output Capacitance
f = 1MHz
Reverse Transfer Capacitance
200
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
-
-
-
-
-
-
-
140
320
630
130
275
45
-
-
-
-
-
-
-
ns
ns
V
R
CC = 600 V, IC = 60 A,
G = 51 , VGE = 15 V,
Inductive Load, TC = 25oC
Rise Time
Turn-Off Delay Time
Fall Time
ns
ns
Qg
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
nC
nC
nC
V
V
CE = 600 V, IC = 60 A,
GE = 15 V, TC = 25oC
Qge
Qgc
95
Electrical Characteristics of the Diode
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max Unit
-
-
-
-
1.2
1.7
2.1
1.5
2.0
V
VFM
Diode Forward Voltage
IF = 15 A
IF = 60 A
1.8
V
1.2
us
uA
trr
IR
Diode Reverse Recovery Time
Instantaneous
IF = 60 A, di/dt = 20 A/us
VRRM = 1000 V
0.05
©2000 Fairchild Semiconductor Corporation
FGL60N100BNTD Rev. C2
2
www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Saturation Voltage Characteristics
100
90
20V
15V
10V
9V
Common Emitter
TC = 25℃
Common Emitter
VGE = 15V
8V
80
TC
= 25℃ ━━
TC = 25℃
80
60
40
20
0
TC = 125℃ ------
70
60
50
40
30
20
10
0
TC = 125℃
7V
VGE = 6V
0
1
2
3
4
5
0
1
2
3
4
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 3. Saturation Voltage vs. Case
Figure 4. Saturation Voltage vs. V
GE
Temperature at Variant Current Level
10
Common Emitter
VGE=15V
Common Emitter
TC= - 40 OC
3
2
1
8
6
4
2
0
80A
60A
30A
30A
60A
80A
IC=10A
IC=10A
-50
0
50
100
150
4
8
12
16
20
Case Temperature, TC [℃]
Gate-Emitter Voltage, VGE [V]
Figure 5. Saturation Voltage vs. V
Figure 6. Saturation Voltage vs. V
GE
GE
10
8
10
Common Emitter
TC = 25℃
Common Emitter
TC = 125℃
8
6
4
2
0
30A
60A
80A
6
30A
60A
4
80A
2
IC = 10A
IC = 10A
0
4
8
12
16
20
4
8
12
16
20
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
©2000 Fairchild Semiconductor Corporation
FGL60N100BNTD Rev. C2
3
www.fairchildsemi.com
Typical Performance Characteristics
Figure 7. Capacitance Characteristics
Figure 8. Switching Loss vs. Gate Resistance
10000
VCC=600V, IC=60A
VGE=? 5V
10000
Cies
TC=25oC
Tdoff
Tr
1000
1000
Tdon
Tf
Coes
100
10
100
Cres
Common Emitter
VGE = 0V, f = 1MHz
TC = 25℃
0
5
10
15
20
25
30
0
50
100
150
200
Collector-Emitter Voltage, VCE [V]
Gate Resistance, RG [? ]
Figure 9. Switching Characteristics vs.
Collector Current
Figure 10. Gate Charge Characteristics
1000
20
Common Emitter
VCC=600V, RL=10 Ω
TC=25 ℃
VCC=600V, Rg=51Ω
VGE=± 15V, TC=25℃
15
Tdoff
10
5
Tf
Tr
100
Tdon
0
0
50
100
150
200
250
300
10
20
30
40
50
60
Gate Charge, Qg [nC]
Collector Current, IC [A]
Figure 11. SOA Characteristics
Figure 12. Forward Characteristics
100
IC MAX. (Pulsed)
100
IC MAX. (Continuous)
50us
TC = 100 ℃
100us
10
10
1ms
TC = 25 ℃
DC Operation
1
1
Single Nonrepetitive Pulse
TC = 25℃
Curve must be darated
linearly with increase
in temperature
0.1
0.1
0.0
0.5
1.0
1.5
2.0
2.5
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
Forward Voltage, VFM [V]
©2000 Fairchild Semiconductor Corporation
FGL60N100BNTD Rev. C2
4
www.fairchildsemi.com
Typical Performance Characteristics
Figure 13. Reverse Recovery Characteristics Figure 14. Reverse Recovery Characteristics
vs. di/dt
vs. Forward Current
1.19
1.02
0.85
0.68
0.51
0.34
0.17
0.00
119
102
85
68
51
34
17
0
di/dt=-20A/us
TC=25?
IF=60A
1.2
1.0
0.8
0.6
0.4
12
10
8
TC=25?
trr
trr
Irr
6
Irr
4
0
40
80
120
di/dt [A/us]
160
200
240
10
20
30
40
50
60
Forward Current, IF [A]
Figure 15. Reverse Current vs. Reverse Voltage Figure 16. Junction Capacitance
1000
100
10
250
200
150
100
50
TC = 25 ℃
TC = 150℃
1
0.1
TC= 25℃
0.01
1E-3
0
0
300
600
900
0.1
1
10
100
Reverse Voltage, VR [V]
Reverse Voltage, VR [V]
Figure 17.Transient Thermal Impedance of IGBT
1
0
1
0
. 5
. 2
0
0 . 1
0 . 1
. 0 5
0 . 0
0
2
PDM
0
. 0 1
t1
t2
0
. 0 1
s i n
g
l e p u l s e
1
E - 3
- 4
- 3
- 2
- 1
0
1
1 0
1 0
1
0
1 0
1
0
1 0
R
e c t a n g u l a r
P
u l s e
D u r a t i o n [ s e c ]
©2000 Fairchild Semiconductor Corporation
FGL60N100BNTD Rev. C2
5
www.fairchildsemi.com
Mechanical Dimensions
Figure 18. TO-264 3L - 3LD; TO264; MOLDED; JEDEC VARIATION AA
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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©2000 Fairchild Semiconductor Corporation
FGL60N100BNTD Rev. C2
6
www.fairchildsemi.com
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Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
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Datasheet contains preliminary data; supplementary data will be published at a later
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Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
©2000 Fairchild Semiconductor Corporation
FGL60N100BNTD Rev. C2
7
www.fairchildsemi.com
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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