FGP20N60UFDTU [ONSEMI]
600V，20A，场截止 IGBT;
| 型号： | FGP20N60UFDTU |
| 厂家： | 
ONSEMI |
| 描述： | 600V，20A，场截止 IGBT 局域网 栅 双极性晶体管 功率控制 |
| 文件： | 总10页 (文件大小：485K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
March 2015
FGP20N60UFD
600 V, 20 A Field Stop IGBT
Features
General Description
•
•
•
•
•
High Current Capability
Using novel field stop IGBT technology, Fairchild’s field stop
IGBTs offer the optimum performance for solar inverter, UPS,
welder and PFC applications where low conduction and switch-
ing losses are essential.
Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 20 A
High Input Impedance
Fast Switching
RoHS Compliant
Applications
•
Solar Inverter, UPS, Welder, PFC
C
G
TO-220
G C E
E
Absolute Maximum Ratings
Symbol
Description
Ratings
Unit
VCES
Collector to Emitter Voltage
600
20
30
40
20
60
V
Gate to Emitter Voltage
Transient Gate-to-Emitter Voltage
Collector Current
VGES
V
@ TC = 25oC
@ TC = 100oC
A
A
A
IC
ICM (1)
PD
Collector Current
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
165
66
W
W
oC
oC
TJ
-55 to +150
-55 to +150
Tstg
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
oC
TL
300
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Typ.
Max.
0.76
Unit
oC/W
oC/W
oC/W
-
-
-
2.51
62.5
©2011 Fairchild Semiconductor Corporation
FGP20N60UFD Rev. 1.4
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGP20N60UFD
FGP20N60UFDTU
TO-220
-
-
50ea
Electrical Characteristics of the IGBT
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250μA
600
-
-
V
ΔBVCES
/ ΔTJ
Temperature Coefficient of Breakdown
Voltage
V
GE = 0 V, IC = 250 μA
-
-
0.6
-
-
V/oC
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0 V,
250
μA
T
C = 25oC
V
T
CE = VCES, VGE = 0 V,
-
-
-
-
1
mA
nA
C = 125oC
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
±400
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 250 μA, VCE = VGE
IC = 20 A, VGE = 15 V
IC = 20 A, VGE = 15 V,
4.0
-
5.0
1.8
6.5
2.4
V
V
VCE(sat)
Collector to Emitter Saturation Voltage
-
2.0
-
V
T
C = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
-
-
-
940
110
40
-
-
-
pF
pF
pF
V
CE = 30 V VGE = 0 V,
,
Output Capacitance
f = 1 MHz
Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
13
17
-
-
ns
ns
Rise Time
Turn-Off Delay Time
Fall Time
87
-
ns
VCC = 400 V, IC = 20 A,
R
G = 10 Ω, VGE = 15 V,
32
64
-
ns
Inductive Load, TC = 25oC
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
0.38
0.26
0.64
13
mJ
mJ
mJ
ns
-
-
-
16
-
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
92
-
ns
VCC = 400 V, IC = 20 A,
G = 10 Ω, VGE = 15 V,
Inductive Load, TC = 125oC
R
63
-
ns
Eon
Eoff
Ets
Qg
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
0.41
0.36
0.77
63
-
mJ
mJ
mJ
nC
nC
nC
-
-
-
V
V
CE = 400 V, IC = 20 A,
GE = 15 V
Qge
Qgc
7
-
32
-
©2011 Fairchild Semiconductor Corporation
FGP20N60UFD Rev. 1.4
2
www.fairchildsemi.com
Electrical Characteristics of the Diode
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
1.9
1.7
35
Max Unit
T
C = 25oC
C = 125oC
-
-
-
-
-
-
2.5
VFM
Diode Forward Voltage
IF = 10 A
V
T
-
TC = 25oC
TC = 125oC
-
trr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
ns
57
-
IF = 10 A,
T
C = 25oC
TC = 125oC
41
-
dIF/dt = 200 A/μs
Qrr
nC
96
-
©2011 Fairchild Semiconductor Corporation
FGP20N60UFD Rev. 1.4
3
www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
60
60
TC = 25oC
20V
TC = 125oC
20V
12V
12V
15V
10V
15V
10V
40
40
20
20
VGE = 8V
VGE = 8V
0
0.0
0
0.0
1.5
3.0
4.5
6.0
1.5
3.0
4.5
6.0
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer Characteristics
60
60
Common Emitter
VCE = 20V
TC = 25oC
Common Emitter
VGE = 15V
TC = 25oC
TC = 125oC
TC = 125oC
40
40
20
0
20
0
0
1
2
3
4
4
6
8
10
12
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage,VGE [V]
Figure 5. Saturation Voltage vs. Case
Figure 6. Saturation Voltage vs. V
GE
Temperature at Variant Current Level
3.2
2.8
2.4
2.0
1.6
1.2
0.8
20
Common Emitter
VGE = 15V
Common Emitter
TC = -40oC
16
12
8
40A
20A
40A
IC = 10A
4
20A
IC = 10A
0
25
50
75
100
125
0
4
8
12
16
20
Collector-EmitterCase Temperature, TC [oC]
Gate-Emitter Voltage, VGE [V]
©2011 Fairchild Semiconductor Corporation
FGP20N60UFD Rev. 1.4
4
www.fairchildsemi.com
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 8. Saturation Voltage vs. V
GE
GE
20
20
Common Emitter
TC = 25oC
Common Emitter
TC = 125oC
16
12
8
16
12
8
40A
20A
4
40A
4
20A
IC = 10A
4
IC = 10A
0
0
0
4
8
12
16
20
0
8
12
16
20
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
Figure 9. Capacitance Characteristics
Figure 10. Gate charge Characteristics
2500
15
Common Emitter
VGE = 0V, f = 1MHz
Common Emitter
TC = 25oC
TC = 25oC
2000
12
300V
200V
Cies
1500
VCC = 100V
9
6
3
0
1000
Coes
Cres
500
0
0.1
1
10
30
0
20
40
Gate Charge, Qg [nC]
60
80
Collector-Emitter Voltage, VCE [V]
Figure 11. SOA Characteristics
Figure 12. Turn-on Characteristics vs.
Gate Resistance
100
100
10μs
100μs
10
1ms
10 ms
tr
1
DC
Common Emitter
VCC = 400V, VGE = 15V
td(on)
Single Nonrepetitive
0.1
o
Pulse T = 25 C
C
Curves must be derated
linearly with increase
in temperature
10
5
IC = 20A
TC = 25oC
TC = 125oC
0.01
0
10
20
30
40
50
60
1
10
100
1000
Gate Resistance, RG [Ω]
Collector-Emitter Voltage, VCE [V]
©2011 Fairchild Semiconductor Corporation
FGP20N60UFD Rev. 1.4
5
www.fairchildsemi.com
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Figure 14. Turn-on Characteristics vs.
Collector Current
Gate Resistance
1000
200
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
Common Emitter
VCC = 400V, VGE = 15V
100
IC = 20A
TC = 25oC
TC = 125oC
td(off)
tr
100
td(on)
10
3
tf
10
0
10
20
30
40
50
60
0
10
20
30
40
Gate Resistance, RG [Ω]
Collector Current, IC [A]
Figure 15. Turn-off Characteristics vs.
Collector Current
Figure 16. Switching Loss vs.
Gate Resistance
3
300
Common Emitter
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
VCC = 400V, VGE = 15V
IC = 20A
TC = 25oC
1
TC = 125oC
TC = 125oC
td(off)
100
Eon
Eoff
tf
10
0.1
0
10
20
30
40
0
10
20
30
40
50
60
Gate Resistance, RG [Ω]
Collector Current, IC [A]
Figure17. Switching Loss vs.
Collector Current
Figure18. Turn off Switching
SOA Characteristics
10
100
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
1
Eon
10
Eoff
0.1
Safe Operating Area
VGE = 15V, TC = 125oC
0.02
1
0
10
20
30
40
1
10
100
1000
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
©2011 Fairchild Semiconductor Corporation
FGP20N60UFD Rev. 1.4
6
www.fairchildsemi.com
Typical Performance Characteristics
Figure 19. Forward Characteristics
Figure 20. Reverse Current
100
40
TJ = 125oC
TC = 125oC
10
1
TJ = 75oC
10
TJ = 25oC
TC = 75oC
0.1
1
TC = 25oC
TC = 75oC
TC = 25oC
0.01
1E-3
TC = 125oC
0.1
0
100
200
300
400
500
600
0
1
2
3
4
Reverse Voltage, VR [V]
Forward Voltage, VF [V]
Figure 21. Stored Charge
Figure 22. Reverse Recovery Time
0.05
60
50
40
30
20
10
200A/μs
0.04
di/dt = 100A/μs
0.03
0.02
0.01
di/dt = 100A/μs
200A/μs
0
5
10
15
20
0
5
10
15
20
Forward Current, IF [A]
Forward Current, IF [A]
Figure 23.Transient Thermal Impedance of IGBT
1
0.1
0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.01
1E-3
single pulse
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-5
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
©2011 Fairchild Semiconductor Corporation
FGP20N60UFD Rev. 1.4
7
www.fairchildsemi.com
SUPPLIER "B" PACKAGE
SHAPE
ꢀꢁꢂꢂ
3.50
10.67
9.65
SUPPLIER "A" PACKAGE
SHAPE
E
3.40
2.50
16.30
13.90
IF PRESENT, SEE NOTE "D"
E
16.51
15.42
9.40
8.13
E
1
2
3
4.10
2.70
[2.46]
C
14.04
12.70
2.13
2.06
FRONT VIEWS
H
4.70
4.00
1.62
1.42
1.62
1.10
2.67
2.40
"A1"
8.65
7.59
1.00
0.55
SEE NOTE "F"
ꢃ
ꢄ
ꢃ
ꢄ
6.69
6.06
OPTIONAL
CHAMFER
E
14.30
11.50
NOTE "I"
BOTTOM VIEW
NOTES:
A) REFERENCE JEDEC, TO-220, VARIATION AB
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [ ].
D) LOCATION OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
3
2
1
E DOES NOT COMPLY JEDEC STANDARD VALUE.
F) "A1" DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 - 0.61
DUAL GAUGE = 1.10 - 1.45
G) DRAWING FILE NAME: TO220B03REV9
H
PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
0.60
0.36
2.85
2.10
BACK VIEW
SIDE VIEW
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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