FGY100T120SWD [ONSEMI]
1200V, 100A Field Stop VII (FS7) Discrete IGBT in Power TO247-3L Packaging;
| 型号： | FGY100T120SWD |
| 厂家： | 
ONSEMI |
| 描述： | 1200V, 100A Field Stop VII (FS7) Discrete IGBT in Power TO247-3L Packaging 双极性晶体管 |
| 文件： | 总8页 (文件大小：281K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
IGBT - Power, Co-PAK
N-Channel, Field Stop VII
BV
V
I
C
CES
CE(SAT)
1200 V
1.7 V
100 A
(FS7), Non-SCR, TO247-3L
1200 V, 1.7 V, 100 A
PIN CONNECTIONS
C
FGY100T120SWD
Description
Using the novel field stop 7th generation IGBT technology and the
Gen7 Diode in TO247 3−lead package, FGY100T120SWD offers the
optimum performance with low switching and conduction losses for
high−efficiency operations in various applications like Solar, UPS,
and ESS.
G
E
Features
• Maximum Junction Temperature T = 175°C
J
• Positive Temperature Coefficient for Easy Parallel Operation
• High Current Capability
• Smooth and Optimized Switching
• Low Switching Loss
• RoHS Compliant
G
C
Applications
E
• Boost and Inverter in Solar System
TO247−3LD
CASE 340CD
• UPS
• Energy Storage System
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
MARKING DIAGRAM
J
Parameter
Collector−to−Emitter Voltage
Gate−to−Emitter Voltage
Symbol
Value
1200
20
Unit
V
V
CES
V
GES
V
$Y&Z&3&K
FGY100T
120SWD
Transient Gate−to−Emitter Voltage
30
V
Collector Current
T
= 25°C
I
C
200
A
C
(Note 1)
T
= 100°C
= 25°C
100
866
433
400
C
Power Dissipation
T
P
W
A
C
D
$Y
&Z
&3
&K
= onsemi Logo
= Assembly Plant Code
= 3−Digit Date Code
T
T
= 100°C
C
Pulsed Collector Current
= 25°C,
= 10 ms
(Note 2)
I
CM
C
P
= 2−Digit Lot Traceability Code
t
FGY100T120SWD = Specific Device code
Diode Forward Current
T
= 25°C
I
200
100
400
A
A
C
F
T
C
= 100°C
ORDERING INFORMATION
Pulsed Diode Maximum
Forward Current
T
P
= 25°C,
= 10 ms
I
FM
C
Device
Package
Shipping
t
(Note 2)
FGY100T120SWD TO−247−3LD
(Pb−Free)
30 Units /
Tube
Operating Junction and Storage
Temperature Range
T , T
−55 to
°C
°C
J
STG
+175
Lead Temperature for Soldering Purposes
T
L
260
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Value limit by bond wire
2. Repetitive rating: Pulse width limited by max. Junction temperature
© Semiconductor Components Industries, LLC, 2023
1
Publication Order Number:
March, 2023 − Rev. 0
FGY100T120SWD/D
FGY100T120SWD
THERMAL CHARACTERISTICS
Parameter
Symbol
Value
0.17
0.29
40
Unit
Thermal Resistance, Junction−to−Case for IGBT
Thermal Resistance, Junction−to−Case for Diode
Thermal Resistance, Junction−to−Ambient
R
°C/W
q
JC
R
q
JA
ELECTRICAL CHARACTERISTICS OF IGBT (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−to−Emitter Breakdown Voltage
BV
V
GE
= 0 V, I = 5 mA
1200
V
CES
C
Collector−to−Emitter Breakdown Voltage
DBV
/
1.5
V/°C
CES
Temperature Coefficient
DT
J
CES
GES
Zero Gate Voltage Collector Current
Gate−to−Emitter Leakage Current
ON CHARACTERISTICS
I
V
= 0 V, V = V
CES
40
mA
GE
CE
I
V
= 20 V, V = 0 V
400
nA
GE
CE
Gate Threshold Voltage
V
V
= V , I = 100 mA
5.6
6.55
1.69
2.26
7.4
2.0
V
GE(TH)
GE
CE
C
Collector−to−Emitter Saturation Voltage
V
V
= 15 V, I = 100 A, T = 25°C
1.35
CE(SAT)
GE
C
J
V
GE
= 15 V, I = 100 A, T = 175°C
C J
DYNAMIC CHARACTERISTICS
Input Capacitance
C
V
= 0 V, V = 30 V, f = 1 MHz
8489
320
pF
nC
IES
GE
CE
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
OES
C
RES
41.4
284
Q
V
= 600 V, V = 15 V, I = 100 A
G
CE GE C
Gate−to−Emitter Charge
Gate−to−Collector Charge
SWITCHING CHARACTERISTICS
Turn−On Delay Time
Turn−Off Delay Time
Rise Time
Q
72.4
101
GE
GC
Q
t
t
V
CE
= 600 V, V = 0/15 V, I = 50 A,
46.4
209.6
30.4
58
ns
d(on)
GE
C
R
= 4.7 W, T = 25°C
G
J
d(off)
t
r
Fall Time
t
f
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Turn−On Delay Time
Turn−Off Delay Time
Rise Time
E
E
3.1
mJ
ns
on
off
1.6
E
4.7
ts
t
t
V
= 600 V, V = 0/15 V,
46.4
168
72
d(on)
d(off)
CE
GE
I
C
= 100 A, R = 4.7 W, T = 25°C
G J
t
r
Fall Time
t
51.2
8.1
f
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
E
on
E
off
mJ
2.8
E
ts
10.9
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2
FGY100T120SWD
ELECTRICAL CHARACTERISTICS OF IGBT (T = 25°C unless otherwise noted)
J
Parameter
Turn−On Delay Time
Symbol
Test Condition
Min
Typ
38.4
244.8
28.8
92.8
4.9
Max
Unit
t
t
V
= 0/15 V, I = 50 A, V = 600 V,
ns
d(on)
d(off)
GE
C
CE
R
= 4.7 W, T = 175°C
G
J
Turn−Off Delay Time
Rise Time
t
r
Fall Time
t
f
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Turn−On Delay Time
Turn−Off Delay Time
Rise Time
E
on
E
off
mJ
ns
2.4
E
ts
7.3
t
t
V
GE
= 0/15 V, I = 100 A,
41.6
196.8
64
d(on)
d(off)
C
V
= 600 V, R = 4.7 W, T = 175°C
CE
G J
t
r
Fall Time
t
76.8
11.3
3.9
f
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
DIODE CHARACTERISTICS
Forward Voltage
E
on
E
off
mJ
V
E
ts
15.2
V
I = 100 A, T = 25°C
1.62
1.82
1.87
2.22
F
F
J
I = 100 A, T = 175°C
F
J
DIODE SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Reverse Recovery Time
t
V
= 600 V, I = 50 A,
152
2977
0.9
ns
nC
mJ
A
rr
R
F
dI /dt = 1000 A/ms, T = 25°C
F
J
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Reverse Recovery Time
Q
rr
E
rec
I
39
RRM
t
rr
V
R
= 600 V, I = 100 A,
261
5636
1.8
ns
nC
mJ
A
F
dI /dt = 1000 A/ms, T = 25°C
F
J
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Reverse Recovery Time
Q
rr
E
rec
I
43
RRM
t
rr
V
= 600 V, I = 50 A,
192
5275
1.6
ns
nC
mJ
A
R
F
dI /dt = 1000 A/ms, T = 175°C
F
J
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Reverse Recovery Time
Q
rr
E
rec
I
55
RRM
t
rr
V
R
= 600 V, I = 100 A,
358
10858
3.6
ns
nC
mJ
A
F
dI /dt = 1000 A/ms, T = 175°C
F
J
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Q
rr
E
rec
I
61
RRM
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
FGY100T120SWD
TYPICAL CHARACTERISTICS
400
350
300
250
200
150
100
50
400
T
T
J=−55°C
J=25°C
VGE=8V
VGE=8V
350
300
250
200
150
100
50
V
=10V
V =10V
GE
GE
VGE=12V
GE=15V
GE=20V
VGE=12V
GE=15V
VGE=20V
V
V
V
0
0
0
1
2
3
4
5
0
1
2
3
4
5
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
400
350
300
250
200
150
100
50
200
150
100
50
T
J=175°C
Common Emitter
VCE=20V
VGE=8V
V
=10V
GE
V
GE=12V
VGE=15V
VGE=20V
T
J=25°C
T
J=175°C
0
0
0
1
2
3
4
5
0
2
4
6
8
10
12
VCE, Collector to Emitter Voltage (V)
VGE, Gate to Emitter Voltage (V)
Figure 3. Output Characteristics
Figure 4. Transfer Characteristics
400
350
300
250
200
150
100
50
3
2.5
2
Common Emitter
VGE=15V
T
J=25°C
T
J=175°C
Common Emitter
VGE=15V
1.5
1
0.5
0
IC=50A
IC=100A
IC=150A
0
0
1
2
3
4
5
−100
−50
0
50
100
150
200
VCE, Collector to Emitter Voltage (V)
T
J, Collector−Emitter Junction Temperature (°C)
Figure 5. Saturation Characteristics
Figure 6. Saturation Voltage vs. Junction
Temperature
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4
FGY100T120SWD
TYPICAL CHARACTERISTICS
100000
10000
1000
100
Common Emitter
VGE=0V f=1MHz
J=25°C
Common Emitter
IC=100A
14
12
10
8
T
6
4
VCC=200V
CC=400V
CC=600V
CIES
COES
CRES
2
V
V
10
0
0.1
1
10
0
50
100
150
200
250 300
350
VCE, Collector to Emitter Voltage (V)
QG, Gate Charge (nC)
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
1000
100
10
Common Emitter
VGE=15V
VCE=600V
IC=100A
*Note:
T
C=25°C,
T
J=175°C
100
Single Pulse
pulseDuration=10us
pulseDuration=100us
pulseDuration=1ms
pulseDuration=10ms
pulseDuration=DC
td(on)_T
J=25°C
1
td(on)_T
J=175°C
t _T
J=25°C
r
t _T
J=175°C
r
10
0.1
1
10
100
1000
0
5
10
15
20
R
G, Gate Resistance (W)
25
30
35
40
45
50
VCE, Collector to Emitter Voltage (V)
Figure 9. SOA Characteristics
Figure 10. Turn−On Switching Time vs. Gate
Resistance
Common Emitter
Common Emitter
VGE=15V
VCE=600V
IC=100A
VGE=15V
VCE=600V
IC=100A
1000
100
10
10
EON_T
J=25°C
td(off)_T
td(off)_T
J=25°C
t_T
EON_T
J=175°C
J=175°C
EOFF_T
J=25°C
J=25°C
f
EOFF_T
J=175°C
t_T
J=175°C
f
1
0
5
10
15
R
20
25
30
35
40
45
50
0
5
10
15
20
R
G, Gate Resistance (W)
25
30
35
40
45
50
G, Gate Resistance (W)
Figure 11. Turn−Off Switching Time vs. Gate
Figure 12. Switching Loss vs. Gate Resistance
Resistance
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5
FGY100T120SWD
TYPICAL CHARACTERISTICS
1000
Common Emitter
VGE=15V
Common Emitter
VGE=15V
VCE=600V
VCE=600V
R
G=4.7W
RG=4.7W
100
100
10
1
td(on)_T
J=25°C
td(off)_T
J=25°C
td(on)_T
J=175°C
td(off)_T
J=175°C
t _T
J=25°C
t_T
J=25°C
r
f
t _T
J=175°C
t_T
J=175°C
r
f
10
0
50
100
150
200
0
50
100
150
200
IC, Collector Current (A)
IC, Collector Current (A)
Figure 13. Turn−On Switching Time vs. Collector
Figure 14. Turn−Off Switching Time vs. Collector
Current
Current
400
VGE=0V
Common Emitter
VGE=15V
350
300
250
200
150
100
50
VCE=600V
R
G=4.7W
10
1
EON_T
EON_T
J=25°C
EOFF_T
J=175°C
T
J=175°C
J=25°C
T
EOFF_T
J=25°C
J=175°C
0.1
0
0
50
100
150
200
0
1
2
3
4
5
IC, Collector Current (A)
VF, Forward Voltage (V)
Figure 15. Switching Loss vs. Collector Current
Figure 16. Diode Forward Characteristics
600
500
400
100
80
VR=600V
IF=100A
VR=600V
IF=100A
T
J=25°C
T
J=175°C
60
40
300
200
100
20
0
T
J=25°C
T
J=175°C
400
600
800
1000
1200
1400
1600
400
600
800
1000
1200
1400
1600
diF /dt, Diode Current Slope (A/us)
diF/dt, Diode Current Slope (A/us)
Figure 17. Diode Reverse Recovery Current
Figure 18. Diode Reverse Recovery Time
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6
FGY100T120SWD
TYPICAL CHARACTERISTICS
16000
12000
8000
=600V
IF=100A
VR
4000
0
T
J=25°C
T
J=175°C
400
600
800
1000
1200
1400
1600
diF /dt, Diode Current Slope (A/us)
Figure 19. Diode Stored Charge Characteristics
1
0.1
D=0 is Single Pulse
D=0.00
D=0.01
D=0.02
D=0.05
D=0.10
D=0.20
D=0.50
0.01
0.001
Notes:
ZθJC(t)=0.17°C/W Max
TJM=PDMxZθJC(t(t)+TTC
P
DM
t
1
Duty Cycle,D=t/t /t2
1
t
1e−06
1e−05
1e−04
1e−03
1e−02
1e−01
1e+00
1e+01
t, Rectangular Pulse Duration (sec)
Figure 20. Transient Thermal Impedance of IGBT
1
0.1
D=0 is Single Pulse
0.01
0.001
D=0.00
D=0.01
D=0.02
D=0.05
D=0.10
D=0.20
D=0.50
Notes:
(t)=0.29°C/W Max
ZθJC
P
DM
TJM=PDMxZθJC(t()t+)+TTC
Duty Cycle,D=t/t /t 2
1
t
1
t
2
1e+01
1e−06
1e−05
1e−04
1e−03
1e−02
1e−01
1e+00
t, Rectangular Pulse Duration (sec)
Figure 21. Transient Thermal Impedance of Diode
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7
FGY100T120SWD
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CD
ISSUE A
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
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PUBLICATION ORDERING INFORMATION
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North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
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◊
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