FGY160T65SPD-F085 [ONSEMI]
IGBT，650V，160A 场截止，带软快速恢复二极管的沟槽;
| 型号： | FGY160T65SPD-F085 |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，650V，160A 场截止，带软快速恢复二极管的沟槽 快速恢复二极管 双极性晶体管 |
| 文件： | 总10页 (文件大小：3434K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT - Field Stop, Trench,
Soft Fast Recovery Diode
650 V, 160 A
FGY160T65SPD-F085
Benefits
www.onsemi.com
• Very Low Conduction and Switching Losses for a High Efficiency
Operation in Various Applications
• Rugged Transient Reliability
• Outstanding Parallel Operation Performance with Balance Current
C
Sharing
• Low EMI
Features
G
• AEC−Q101 Qualified and PPAP Capable
• Very Low Saturation Voltage: V
= 1.6 V (Typ.) @ I = 160 A
C
CE(sat)
E
• Maximum Junction Temperature: T = 175°C
J
• Positive Temperature Co−Efficient
• Tight Parameter Distribution
• High Input Impedance
• 100% of the Parts are Dynamically Tested
• Short circuit ruggedness > 6 ms @ 25°C
• Copacked with Soft, Fast Recovery Extremefast Diode
G
• This Device is Pb−Free, Halogen Free/BFR Free and are RoHS
C
E
Compliant
TO−247−3LD
CASE 340CU
Applications
• Traction Inverter for HEV/EV
• Auxiliary DC/AC Converter
• Motor Drives
MARKING DIAGRAM
• Other Power−Train Applications Requiring High Power Switch
$Y&Z&3&K
FGY160T
65SPD
&Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
FGY160T65SPD = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
FGY160T65SPD−F085/D
November, 2019 − Rev. 3
FGY160T65SPD−F085
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Ratings
Unit
V
V
Collector to Emitter Voltage
Gate to Emitter Voltage
650
CES
GES
V
20
30
V
Transient Gate to Emitter Voltage
V
I
C
Collector Current @ T = 25°C (Note 1)
240
A
C
Collector Current @ T = 100°C
220
A
C
I
Nominal Current
160
A
Nominal
I
Pulsed Collector Current
480
A
CM
I
Diode Forward Current @ T = 25°C (Note 1)
240
A
FM
C
Diode Forward Current @ T = 100°C
188
A
C
P
Maximum Power Dissipation @ T = 25°C
882
W
W
ms
V/ns
°C
°C
°C
D
C
Maximum Power Dissipation @ T = 100°C
441
C
SCWT
Short Circuit Withstand Time @ T = 25°C
6
C
DV/Dt
Voltage Transient Ruggedness (Note 2)
10
T
Operating Junction Temperature
−55 to +175
−55 to +175
300
J
T
stg
Storage Temperature Range
T
Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Limited to bondwire.
2. V = 400 V, V = 15 V, I = 480 A, Inductive load.
CC
GE
CE
THERMAL CHARACTERISTICS
Symbol
Parameter
Typ.
−
Max.
0.17
0.32
40
Units
°C/W
°C/W
°C/W
R
R
(IGBT)
(Diode)
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
q
JC
−
q
JC
R
−
q
JA
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Packing Type
Qty per Tube
30 ea
FGY160T65SPD
FGY160T65SPD−F085
TP−247−3LD
Tube
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Collector to Emitter Breakdown Voltage
V
V
= 0 V, I = 1 mA
650
−
−
−
V
CES
GE
C
DBV
/
Temperature Coefficient of Breakdown
Voltage
= 0 V, I = 1 mA
−
0.6
V/°C
CES
GE
C
DT
J
CES
GES
I
Collector Cut-Off Current
V
V
= V
= V
, V = 0 V
−
−
−
−
40
mA
CE
CES
GE
I
G−E Leakage Current
, V = 0 V
250
nA
GE
GES
CE
ON CHARACTERISTICS
V
G−E Threshold Voltage
I
I
= 160 mA, V = V
GE
4.3
−
5.3
1.6
6.3
2.05
−
V
V
V
GE(th)
C
CE
V
Collector to Emitter Saturation Voltage
= 160 A, V = 15 V
GE
CE(sat)
C
I
= 160 A, V = 15 V,
−
2.15
C
GE
T = 175°C
J
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2
FGY160T65SPD−F085
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted) (continued)
J
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 30 V V = 0 V,
−
−
−
−
6710
450
55
−
−
−
−
pF
pF
pF
W
ies
CE
,
GE
f = 1 MHz
C
Output Capacitance
oes
C
Reverse Transfer Capacitance
Internal Gate Resistance
res
R
f = 1 MHz
3
G
SWITCHING CHARACTERISTICS
T
Turn-On Delay Time
Rise Time
V
= 400 V, I = 160 A,
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
53
197
98
−
−
ns
ns
d(on)
CC
G
C
R
= 5 W, V = 15 V,
GE
T
r
Inductive Load, T = 25°C
J
T
Turn-Off Delay Time
Fall Time
−
ns
d(off)
T
f
141
12.4
5.7
18.1
52
−
ns
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
−
mJ
mJ
mJ
ns
on
off
E
−
E
−
ts
T
d(on)
V
= 400 V, I = 160 A,
−
CC
C
R
= 5 W, V = 15 V,
G
GE
T
r
236
104
204
21
−
ns
Inductive Load, T = 175°C
J
T
Turn-Off Delay Time
Fall Time
−
ns
d(off)
T
f
−
ns
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
−
mJ
mJ
mJ
nC
nC
nC
on
off
E
8.5
29.5
163
50
−
E
−
ts
Q
V
CE
V
GE
= 400 V, I = 160 A,
245
−
g
C
= 15 V
Q
Q
ge
gc
49
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ELECTRICAL CHARACTERISTICS OF THE DIODE (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min.
−
Typ.
1.4
Max.
1.7
−
Unit
V
Diode Forward Voltage
I = 160 A
T = 25°C
V
FM
rec
F
J
T = 175°C
J
−
1.35
598
4000
132
245
3.3
E
Reverse Recovery Energy
V
CE
= 400 V, I = 160 A,
T = 25°C
J
−
−
mJ
ns
mC
F
DI /Dt = 1000 A/ms
F
T = 175°C
J
−
−
T
rr
Diode Reverse Recovery
Time
T = 25°C
J
−
−
T = 175°C
J
−
−
Q
Diode Reverse Recovery
Charge
T = 25°C
J
−
−
rr
T = 175°C
J
−
12.5
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
3
FGY160T65SPD−F085
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer Characteristics
Figure 5. Saturation Voltage vs. Case Temperature
at Variant Current Level
Figure 6. Saturation Voltage vs. VGE
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4
FGY160T65SPD−F085
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Figure 7. Saturation Voltage vs. VGE
Figure 8. Saturation Voltage vs. VGE
Figure 9. Capacitance Characteristics
Figure 10. Gate Charge Characteristics
Figure 11. SOA Characteristics
Figure 12. Turn Off Switching SOA Characteristics
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5
FGY160T65SPD−F085
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Figure 13. Turn−on Characteristics vs.
Figure 14. Turn−off Characteristics vs.
Gate Resistance
Gate Resistance
Figure 15. Turn−on Characteristics vs.
Figure 16. Turn−off Characteristics vs.
Collector Current
Collector Current
100
10
1
50
Common Emitter
V
= 15V, R = 5W
GE
G
o
T
= 25 C
C
E
E
o
on
off
E
T
= 175 C
on
C
10
E
off
Common Emitter
= 400V, V
V
= 15V
GE
CC
I
= 160A
C
o
T
T
= 25 C
C
o
= 175 C
C
1
0.1
0
10
20
30
40
50
0
20
40
60
80
100 120 140 160
Gate Resistance, RG [W]
Collector Current, IC [A]
Figure 17. Switching Loss vs. Gate Resistance
Figure 18. Switching Loss vs. Collector Current
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6
FGY160T65SPD−F085
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Figure 19. Forward Characteristics
Figure 20. Reverse Current
Figure 21. Stored Charge
Figure 22. Reverse Recovery Time
Figure 23. Collector to Emitter Breakdown
Voltage vs. Junction Temperature
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7
FGY160T65SPD−F085
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Figure 24. Transient Thermal Impedance of IGBT
Figure 25. Transient Thermal Impedance of Diode
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CU
ISSUE B
DATE 28 OCT 2021
GENERIC
MARKING DIAGRAM*
XXXX = Specific Device Code
*This information is generic. Please refer to
A
Y
= Assembly Site Code
= Year
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
AYWWZZ
XXXXXXXXX
XXXXXXXXX
WW = Work Week
ZZ = Assembly Lot Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13773G
TO−247−3LD
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
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and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
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