FGY75N60SMD [ONSEMI]
600V，75A，场截止IGBT;
| 型号： | FGY75N60SMD |
| 厂家： | 
ONSEMI |
| 描述： | 600V，75A，场截止IGBT PC 栅 瞄准线 双极性晶体管 功率控制 |
| 文件： | 总9页 (文件大小：475K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
IGBT, ꢀꢁꢂ
600 V, 75 A
FGY75N60SMD
TO−247−3LD
CASE 340CD
ꢃᫀ
൩ᫎਫ਼ꢀꢁꢂꢃꢄꢅꢆꢇIGBT ꢈꢉꢊꢋꢌꢈꢍꢁꢂꢃ IGBTꢇꢎ
ꢏ，ꢐꢑꢒꢓꢔꢕ、UPS
、⋪ᤚ٬ꢇPFCꢇؙĮො٬რ͓ᔿ૧ೃ
͓ᲝᑑꢀၴꢌᖰŻᣠœሇ்。
C
ꢄꢅ
•ꢖ▨ꢗἡ்ѻ
•ꢖĮ⑁
٬ꢗի
：V •ꢖ▨ᩣͅℋᑷ
= 1.9 V @ I = 75 A
C
CE(sat)
G
•ꢖᇋრ͓ E
= 13ꢇmJ/A
OFF
E
•ꢖ
ר
RoHS ᧧Φ ꢆ✈
MARKING DIAGRAM
•ꢖଊ℃்ꢓꢔꢕ、UPS、ꢗ⋪ᤚ、SMPS、PFC
ভꢇꢈꢉ⍭ꢊꢋ
$Y&Z&3&K
FGY75N60
SMD
ꢌ ᛄꢍ
ꢀꢁꢂ-ꢀꢁꢂꢂꢃꢁꢃ
ꢄꢂ-ꢀꢁꢂꢃꢁꢃ
⍭ꢊꢋ
ꢎꢏ
V
V
CES
600
V
GES
20
V
ꢅꢆꢄꢂꢇꢀꢁꢂꢁꢃ
ꢀꢁꢂꢁꢈ, @ TC = 25°C
ꢀꢁꢂꢁꢈ, @ TC = 100°C
ꢀꢁꢂꢉꢄꢁꢈ, @ TC = 25°C
ꢅꢂꢊꢋꢆꢁꢈ, @ TC = 25°C
ꢅꢂꢊꢋꢆꢁꢈ, @ TC = 100°C
ꢅꢂꢊꢌꢇꢋꢆꢉꢄꢁꢈ
ꢌꢇꢈꢍ, @ TC = 25°C
ꢌꢇꢈꢍ, @ TC = 100°C
ꢎꢉꢏꢐ
30
V
I
C
150
A
75
225
A
$Y
&Z
&3
&K
= Logo
= Assembly Plant Code
= Date Code (Year & Week)
= Lot Run Traceability Code
I
A
CM(1)
I
F
75
A
FGY75N60SMD = Specific Device Code
50
A
I
225
A
FM(1)
ORDERING INFORMATION
P
D
750
W
W
°C
°C
°C
375
Device
Package
Shipping
T
−55 ꢇ +175
−55 ꢇ +175
300
J
FGY75N60SMD
TO−247−3LD
(Pb−Free)
450 / Tube
T
stg
ꢊꢋꢐꢑꢒꢌ
T
L
ꢓꢍꢔꢕꢖꢌꢇꢗꢘꢐꢑ，ҋꢎꢏ,
1/8″ ᓡঽ 5 Ң
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
(ꢐᚡᝧ)
ꢑꢁꢃᡕ᪗ꢌꢇ⍭ꢒꢓጸꢔꢕꢖꢖꢓꢒꢌ，ꢗꢘꢙ்ꢚᔿꢛ。ꢑᡕ᪗Ûĵ
᪩{℠ꢓ，෦ៀẵƽᚑꢗꢘꢈ்，ꢙ்ꢚොೄꢗꢘᔿꢛ，ᅑ
ڭ
ꢙ∰ሇ。 1. Ო૭╧⍭ꢒꢓ：ꢉꢄඝꢑַ℠ꢍꢌꢇꢓꢏꢐ
ꢐꢅ்
ꢌ (IGBT)
ꢑꢒ
ꢓꢔꢋ
ꢈꢉꢋ
ꢎꢏ
°C/W
°C/W
°C/W
R
ꢀꢁꢂ-ꢀꢁꢂꢂꢃꢁꢃ
ꢏꢙ-ꢏijꢖꢚꢛ
ꢏꢇꢜꢚꢛ
−
−
−
0.2
0.48
40
θ
JC
R
(Diode)
θ
JC
R
q
JA
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
October, 2021 − Rev. 3
FGY75N60SMDCN/D
FGY75N60SMD
IGBT ꢀꢕꢄꢅ(T = 25°C ꢝꢞ
׆
ꢟꢠꢡ) C
ꢌ ꢑꢒ
ꢖᚥꢗꢘ
ꢈꢙꢋ ꢓꢔꢋ ꢈꢉꢋ
ꢎꢏ
ꢚꢛꢄꢅ
BV
ꢀꢁꢂ-ꢀꢁꢂϛꢢꢁꢃ
ϛꢢꢐꢑꢣꢤꢁꢃ
ꢀꢁꢂϧꢥꢁꢈ
G−E ꢦꢁꢈ
V
GE
V
GE
V
CE
V
GE
= 0 V, I = 250 mA
600
−
−
0.67
−
−
V
V/°C
mA
CES
C
DBV
/ DT
= 0 V, I = 250 mA
−
CES
J
C
I
= V
= V
, V = 0 V
−
250
400
CES
CES
GES
GE
I
, V = 0 V
CE
−
−
nA
GES
ꢜꢄꢅ
V
G−E ꢧꢓꢁꢃ
I
C
I
C
I
C
= 250 mA, V = V
GE
3.5
−
5.0
6.5
2.50
−
V
V
V
GE(th)
CE
V
ꢀꢁꢂ-ꢀꢁꢂꢃꢨ
٬
ꢁꢃ = 75 A, V = 15 V
1.90
2.14
CE(sat)
GE
= 75 A, V = 15 V, T = 175°C
−
GE
C
ꢝꢞꢄꢅ
V
CE
= 30 V, V = 0 V, f = 1 MHz
C
ꢩͅꢁ
−
−
−
3800
390
−
−
−
pF
pF
pF
GE
ies
C
ꢩꢖꢁ
oes
C
֭ꢆĀꢩꢁ
105
res
ꢟꢚꢄꢅ
V
= 400 V, I = 75 A,
t
ොꢪꢫꢬꢭꢃ
⛺ԧꢭꢃ
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
24
56
32
73
177
29
2.99
1.00
3.99
−
ns
ns
CC
G
C
d(on)
R
= 3 W, V = 15 V,
GE
C
t
r
ꢮሇꢯꢰ, T = 25°C
t
͓ꢥꢫꢬꢭꢃ
⛻ꢱꢭꢃ
136
22
ns
d(off)
t
f
ns
E
on
E
off
ොꢪꢲ͓ᔿꢍ
͓ꢥꢲ͓ᔿꢍ
ꢳꢲ͓ᔿꢍ
2.3
0.77
3.07
23
mJ
mJ
mJ
ns
E
ts
V
= 400 V, I = 75 A,
C
t
t
ොꢪꢫꢬꢭꢃ
⛺ԧꢭꢃ
CC
d(on)
R
= 3 W, V = 15 V,
G
GE
t
r
53
−
ns
ꢮሇꢯꢰ, T = 175°C
C
͓ꢥꢫꢬꢭꢃ
⛻ꢱꢭꢃ
146
15
−
ns
d(off)
t
f
−
ns
E
on
E
off
ොꢪꢲ͓ᔿꢍ
͓ꢥꢲ͓ᔿꢍ
ꢳꢲ͓ᔿꢍ
3.60
1.11
4.71
248
28
−
mJ
mJ
mJ
nC
nC
nC
−
E
ts
−
V
CE
= 400 V, I = 75 A, V = 15 V
C GE
Q
ꢳꢄꢂꢁꢴ
370
42
195
g
Q
ꢄꢂ-ꢀꢁꢂꢃꢁꢴ
ꢄꢂ-ꢀꢁꢂꢃꢁꢴ
ge
Qgc
129
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
(ꢐᚡᝧ)
ꢝꢞ
׆
ꢟꢠꢡ，“ꢁꢵꢶሇ”ጸꢷꢔꢕꢖꢖꢸꢹꢕꢺꢻꢼꢘ⛻ꢖڡ
ሇ்ꢐꢤ。ꢑई⛽
ꢼꢘ⛻ꢽꢾ，ڡ
ሇ்ꢙ்⛾“ꢁꢵꢶሇ”ጸꢷ ꢔꢹꢕሇ்ꢐꢤ⛽⛰ೄ。
ꢠꢡ
ٱ
ꢀꢕꢄꢅ(T = 25°C ꢝꢞ׆
ꢟꢠꢡ) C
ꢌ ꢑꢒ
ꢖᚥꢗꢘ
ꢈꢙꢋ ꢓꢔꢋ ꢈꢉꢋ
ꢎꢏ
V
ꢅꢂꢊꢋꢆꢁꢃ
֭ꢆꢿ૭ꢁ்
I = 50 A
V
T
= 25°C
−
−
−
−
−
−
−
1.75
1.35
0.14
41
2.1
−
FM
F
C
C
C
C
C
C
C
T
T
T
T
T
T
= 175°C
= 175°C
= 25°C
I = 50 A,
E
−
mJ
ns
F
rec
di /dt = 200 A/ms
F
R
t
ꢅꢂꢊ֭ꢆꢿ૭ꢭꢃ
55
−
rr
V
= 400 V
= 175°C
= 25°C
126
81
Q
ꢅꢂꢊ֭ꢆꢿ૭ꢁꢴ
nC
115
−
rr
= 175°C
736
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
(ꢐᚡᝧ)
ꢝꢞ
׆
ꢟꢠꢡ，“ꢁꢵꢶሇ”ጸꢷꢔꢕꢖꢖꢸꢹꢕꢺꢻꢼꢘ⛻ꢖڡ
ሇ்ꢐꢤ。ꢑई⛽
ꢼꢘ⛻ꢽꢾ，ڡ
ሇ்ꢙ்⛾“ꢁꢵꢶሇ”ጸꢷ ꢔꢹꢕሇ்ꢐꢤ⛽⛰ೄ。
www.onsemi.cn
2
FGY75N60SMD
ꢓꢔꢅ்ꢄꢢ
225
180
225
T
20 V
15 V
20 V
15 V
12 V
12 V
10 V
T
C
= 25°C
= 175°C
C
180
10 V
135
90
135
90
45
V
GE
= 8 V
45
0
V
= 8 V
GE
0
0
1
2
3
4
5
0
1
2
3
4
5
V
CE
, Collector−Emitter Voltage (V)
ࣞ
1. ꢓꢔᩣϚꢄꢅ V
CE
, Collector−Emitter Voltage (V)
ࣞ
2. ꢓꢔᩣϚꢄꢅ 225
180
225
180
Common Emitter
Common Emitter
V
= 15 V
V
= 20 V
GE
CE
T
T
= 25°C
= 175°C
T
T
= 25°C
= 175°C
C
C
C
C
135
90
135
90
45
0
45
0
0
1
2
3
4
5
0
1
2
3
4
5
V
CE
, Collector−Emitter Voltage (V)
V
CE
, Collector−Emitter Voltage (V)
ࣞ
4. Āꢄꢅ ࣞ
3. ꢓꢔ⑁٬
ꢀիꢄꢅ 3.5
3.0
2.5
2.0
20
16
12
8
Common Emitter
= 15 V
Common Emitter
C
150 A
V
T
= −40°C
GE
75 A
I
C
= 40 A
75 A
150 A
12
1.5
1.0
4
0
I
C
= 40 A
25
50
75
100
125
150
175
4
8
16
20
T , Collector−Emitter Case Temperature (5C)
C
V
GE
, Gate−Emitter Voltage (V)
ࣞ
5. ⑁٬
ꢀի⛾Ŕꢚߋ
ई⛽
ꢀἡ⛻Ŕꢣႆ ࣞ
6. ⑁٬
ꢀի⛾ VGE Ŕꢚߋ
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3
FGY75N60SMD
ꢓꢔꢅ்ꢄꢢ(Continued)
20
16
12
8
20
Common Emitter
= 25°C
Common Emitter
C
T
T
= 175°C
C
16
12
8
75 A
75 A
150 A
150 A
12
4
0
4
0
I
C
= 40 A
I
= 40 A
C
4
1
0
8
16
20
30
50
4
0
0
8
12
16
20
250
50
V
, Gate−Emitter Voltage (V)
V
, Gate−Emitter Voltage (V)
GE
GE
ࣞ
7. ⑁٬
ꢀի⛾ VGE Ŕꢚߋ
ࣞ
8. ⑁٬
ꢀի⛾ VGE Ŕꢚߋ
8000
6000
4000
15
12
9
Common Emitter
Common Emitter
I = 75 A, T = 25°C
CE
300 A
V
C
= 0 V, f = 1 MHz
GE
C
T
= 25°C
C
C
ies
V
= 200 A
CC
400 A
oes
6
C
res
2000
0
3
0
10
50
100
150
200
V
, Collector−Emitter Voltage (V)
Q , Gage Charge (nC)
CE
g
ࣞ
9. ꢀꢄꢅ ࣞ
10. ꢤꢡꢀ็ꢄꢅ 5500
1000
200
100
Common Emitter
= 400 V, V = 15 V
V
C
CC
GE
I
= 75 A
t
f
t
d(off)
Common Emitter
= 400 V, V = 15 V
V
C
CC
GE
100
10
t
d(on)
I
= 75 A
t
r
T
T
= 25°C
= 175°C
C
T
T
= 25°C
= 175°C
C
C
C
10
10
20
30
40
10
20
30
40
R , Gate Resistance (W)
G
R , Gate Resistance (W)
G
ࣞ
11. ꢚꢛꢄꢅ⛾ꢤꢡꢀℋ ࣞ
12. ꢟꢥꢄꢅ⛾ꢤꢡꢀℋ www.onsemi.cn
4
FGY75N60SMD
ꢓꢔꢅ்ꢄꢢ(Continued)
1000
100
10
200
Common Emitter
= 15 V, R = 3 W
Common Emitter
V = 15 V, R = 3 W
GE
V
GE
G
G
100
t
f
t
d(off)
t
d(on)
t
r
T
T
= 25°C
= 175°C
T
T
= 25°C
= 175°C
C
C
C
C
10
0
30
60
90
120
150
0
30
60
90
120
150
I , Collector Current (A)
C
I , Collector Current (A)
C
ࣞ
13. ꢚꢛꢄꢅ⛾↖ꢀꢡꢀἡŔꢚߋ
ࣞ
14. ꢟꢥꢄꢅ⛾↖ꢀꢡꢀἡ 30
10
30
10
Common Emitter
= 15 V, R = 3 W
Common Emitter
V = 400 V, V7 = 15 V
CC
C
V
GE
G
E
E
I = 75 A
on
E
on
E
off
1
off
1
T
T
= 25°C
= 175°C
T
T
= 25°C
= 175°C
C
C
C
C
0.1
0.5
0
30
60
90
120
150
0
10
20
30
40
50
I , Collector Current (A)
C
R , Gate Resistance (W)
G
ࣞ
15. ꢟꢚꢦ૧⛾↖ꢀꢡꢀἡŔꢚߋ
ࣞ
16. ꢟꢚꢦ૧⛾ꢤꢡꢀℋ 500
100
300
100
10 ms
100 ms
1 ms
10 ms
10
1
DC
10
1
Notes:
1. T = 25°C
C
Safe Operating Area
= 15 V, T = 175°C
2. T = 175°C
J
V
GE
3. Single Pulse
C
0.1
1
10
100
1000
10
100
, Collector−Emitter Voltage (V)
1000
V
CE
, Collector−Emitter Voltage (V)
V
CE
ࣞ
17. SOA ꢄꢅ ࣞ
18. ꢚꢛꢟꢚ SOA ꢄꢅ www.onsemi.cn
5
FGY75N60SMD
ꢓꢔꢅ்ꢄꢢ(Continued)
250
200
150
100
50
160
140
120
100
80
Common Emitter
= 15 V
Square Wave
V
T < 175°C, D = 0.5,
GE
J
V
CE
V
GE
= 400 V,
= 15/0 V, R = 3 W
G
T
C
= 75°C
60
T
C
= 100°C
40
20
0
0
1k
25
50
75
100
125
150
175
10k
100k
1M
T , Case Temperature (5C)
f, Switching Frequency (Hz)
C
ࣞ
19. ꢀἡℝ⍭ ࣞ
20. ᩍꢀἡ⛾⍡ꢧŔꢚߋ
400
100
10000
T
T
= 175°C
= 125°C
C
1000
100
T
C
= 175°C
C
T
= 75°C
C
10
1
T
T
= 75°C
= 25°C
C
T
= 125°C
C
10
1
T
C
= 25°C
C
0.1
0.01
0
1
2
3
0
100
200
300
400
500
600
V , Forward Voltage (V)
F
V , Reverse Voltage (V)
R
ࣞ
21. ꢨꢩꢄꢅ ࣞ
22. ꢪꢩꢀἡ 900
750
600
200
160
120
80
T
T
= 25°C
= 175°C
T
T
= 25°C
= 175°C
C
C
C
C
450
300
di/dt = 200 A/ms
di/dt = 200 A/ms
di/dt = 100 A/ms
di/dt = 100 A/ms
40
0
150
0
0
20
40
60
80
0
20
40
60
80
I , Forward Current (A)
F
I , Forward Current (A)
F
ࣞ
23. ꢫꢬꢀ็ ࣞ
24. ꢪꢩꢭꢮꢀἡ www.onsemi.cn
6
FGY75N60SMD
ꢓꢔꢅ்ꢄꢢ(Continued)
0.3
0.1
0.5
0.2
0.1
0.05
P
DM
0.01
0.02
t
1
0.01
Single Pulse
t
2
Duty Factor, D = t1/t2
Peak T = P x Zthjc + T
J
dm
C
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Rectangular Pulse Duration (s)
ࣞ
25. IGBT ɼꢞꢐℋꢯ 1
0.5
0.2
0.1
0.1
P
DM
0.05
t
1
0.02
t
0.01
2
Duty Factor, D = t1/t2
0.01
Single Pulse
Peak T = P x Zthjc + T
J
dm
C
0.005
0.00001
0.0001
0.001
0.01
0.1
1
Rectangular Pulse Duration (s)
ࣞ
26. ꢠꢡٱ
ɼꢞꢐℋꢯ www.onsemi.cn
7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CD
ISSUE A
DATE 18 SEP 2018
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
= Pb−Free Package
G
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13857G
TO−247−3LD
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ON Semiconductor and
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