FJB102TM [ONSEMI]
100V高电压功率达林顿晶体管;
| 型号： | FJB102TM |
| 厂家： | 
ONSEMI |
| 描述： | 100V高电压功率达林顿晶体管 晶体管 达林顿晶体管 |
| 文件： | 总7页 (文件大小：348K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Is Now Part of
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email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
December 2014
FJB102
NPN High-Voltage Power Darlington Transistor
Features
• High DC Current Gain : hFE = 1000 at VCE = 4 V, IC = 3 A (Minimum)
• Low Collector-Emitter Saturation Voltage
Equivalent Circuit
C
B
D2-PAK
1
R1
R2
1.Base 2.Collector 3.Emitter
R 1 ≅ 10 kΩ
R 2 ≅ 0.6 kΩ
E
Ordering Information
Part Number
Top Mark
Package
Packing Method
Tape and Reel
FJB102TM
FJB102
TO-263 2L (D2PAK)
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
100
100
V
5
V
8
A
ICP
Collector Current (Pulse)(1)
15
A
IB
Base Current (DC)
1
80
A
PC
Collector Dissipation (TC = 25°C)
Junction Temperature
W
°C
°C
TJ
150
TSTG
Storage Temperature Range
-65 to 150
Note:
1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%.
© 2007 Fairchild Semiconductor Corporation
FJB102 Rev. 1.1.0
www.fairchildsemi.com
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
IC = 30 mA, IB = 0
IE = 500 μA, IC = 0
VCB = 100 V, IE = 0
VCE = 50 V, IB = 0
VEB = 5 V, IC = 0
Min.
100
10
Max.
Unit
V
BVCEO(sus) Collector-Emitter Sustaining Voltage
BVEBO
ICBO
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
V
50
50
μA
μA
mA
ICEO
IEBO
2
VCE = 4 V, IC = 3 A
VCE = 4 V, IC = 8 A
IC = 3 A, IB = 6 mA
IC = 8 A, IB = 80 mA
VCE = 4 V, IC = 8 A
1000
200
20000
hFE
DC Current Gain
2.0
2.5
2.8
VCE(sat)
Collector-Emitter Saturation Voltage
V
VBE(on)
Cob
Base-Emitter On Voltage
Output Capacitance
V
VCB = 10 V, IE = 0,
f = 1 MHz
200
pF
© 2007 Fairchild Semiconductor Corporation
FJB102 Rev. 1.1.0
www.fairchildsemi.com
2
Typical Performance Characteristics
5
10k
IB = 1mA
VCE = 4V
4
IB = 300μA
3
1k
IB = 200μA
2
1
IB = 100μA
0
100
0.1
0
1
2
3
4
5
1
10
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC Current Gain
10k
10k
1k
100
10
1
IE=0, f=1MHz
IC = 500 IB
VBE(sat)
1k
VCE(sat)
100
0.1
1
10
100
0.1
1
10
100
IC[A], COLLECTOR CURRENT
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage and
Base-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
120
100
80
60
40
20
0
100
1ms
10
100μs
5ms
DC
1
0.1
0.01
0.1
0
25
50
75
100
125
150
175
1
10
100
TC[oC], CASE TEMPERATURE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Forward Biased Safe Operating Area
Figure 6. Power Derating
© 2007 Fairchild Semiconductor Corporation
FJB102 Rev. 1.1.0
www.fairchildsemi.com
3
Physical Dimensions
Figure 7. 2-LEAD, TO263, D2PAK, SURFACE MOUNT
© 2007 Fairchild Semiconductor Corporation
FJB102 Rev. 1.1.0
www.fairchildsemi.com
4
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
OPTOPLANAR®
AccuPower¥
Awinda®
F-PFS¥
®*
FRFET®
Global Power ResourceSM
GreenBridge¥
Green FPS¥
Green FPS¥ e-Series¥
Gmax¥
AX-CAP®*
TinyBoost®
TinyBuck®
TinyCalc¥
TinyLogic®
TINYOPTO¥
TinyPower¥
TinyPWM¥
TinyWire¥
TranSiC¥
®
PowerTrench®
PowerXS™
Programmable Active Droop¥
QFET®
BitSiC¥
Build it Now¥
CorePLUS¥
CorePOWER¥
CROSSVOLT¥
CTL¥
GTO¥
IntelliMAX¥
QS¥
Quiet Series¥
RapidConfigure¥
¥
Current Transfer Logic¥
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficientMax¥
ISOPLANAR¥
Making Small Speakers Sound Louder
and Better™
MegaBuck¥
MICROCOUPLER¥
MicroFET¥
TriFault Detect¥
TRUECURRENT®*
μSerDes¥
Saving our world, 1mW/W/kW at a time™
SignalWise¥
SmartMax¥
ESBC¥
SMART START¥
Solutions for Your Success¥
SPM®
®
MicroPak¥
UHC®
MicroPak2¥
MillerDrive¥
MotionMax¥
MotionGrid®
Fairchild®
Ultra FRFET¥
UniFET¥
VCX¥
VisualMax¥
VoltagePlus¥
XS™
Fairchild Semiconductor®
FACT Quiet Series¥
FACT®
STEALTH¥
SuperFET®
SuperSOT¥-3
MTi®
FAST®
SuperSOT¥-6
SuperSOT¥-8
SupreMOS®
MTx®
FastvCore¥
FETBench¥
FPS¥
MVN®
mWSaver®
Xsens™
SyncFET¥
Sync-Lock™
OptoHiT¥
❺
™
OPTOLOGIC®
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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As used herein:
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intended for surgical implant into the body or (b) support or sustain
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accordance with instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to
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safety or effectiveness.
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under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Preliminary
No Identification Needed
Obsolete
First Production
Full Production
Not In Production
Rev. I72
© Fairchild Semiconductor Corporation
www.fairchildsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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