FJD5304DTF [ONSEMI]
高压快速开关晶体管;
| 型号： | FJD5304DTF |
| 厂家： | 
ONSEMI |
| 描述： | 高压快速开关晶体管 开关 高压 晶体管 |
| 文件： | 总7页 (文件大小：408K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
July 2010
FJD5304D
High Voltage Fast Switching Transistor
Features
• Built-in Free Wheeling Diode
• Wide Safe Operating Area
• Small Variance in Storage Time
• Suitable for Electronic Ballast Application
Equivalent Circuit
C
B
D-PAK
1. Base 2. Collector 3. Emitter
1
E
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
Units
700
400
12
4
8
2
4
30
1.25
V
V
V
A
A
A
A
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
* Collector Current (Pulse)
Base Current (DC)
ICP
IB
IBP
PC
* Base Current (Pulse)
Collector Dissipation
T = 25°C
W
W
Tac = 25°C
TJ
TSTG
Junction Temperature
Storage Temperature
150
-55 to 150
°C
°C
* Pulse Test: PW = 300µs, Duty Cycle = 2% Pulsed
Thermal Characteristics Ta = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
Rθja
Thermal Resistance Junction-Ambient **
99
°C/W
** Device mounted on minimum pad size.
© 2010 Fairchild Semiconductor Corporation
FJD5304D Rev. A1
www.fairchildsemi.com
1
Package Marking and Ordering Information
Device Marking
J5304D
Device
FJD5304DTM
Package
D-PAK
Reel Size
13” Dia
Tape Width
Quantity
2500
-
J5304D
FJD5304DTF
D-PAK
13” Dia
-
2000
Electrical Characteristics Ta = 25°C unless otherwise noted
Symbol Parameter Conditions
BVCBO Collector-Base Breakdown Voltage IC = 1mA, IE = 0
BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0
Min. Typ. Max. Units
700
400
12
V
V
V
BVEBO Emitter-Base Breakdown Voltage
IE = 1mA, IC = 0
VCB = 700V, IE = 0
VCB = 400V, IB = 0
VEB = 12V, IC = 0
ICES
ICEO
IEBO
hFE
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
100
250
1
µA
µA
mA
VCE = 5V, IC = 10mA
VCE = 5V, IC = 2.0A
10
8
40
VCE(sat) Collector-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A
IC = 1.0A, IB = 0.2A
0.7
1.0
1.5
1.1
1.2
1.3
V
V
V
V
V
IC = 2.5A, IB = 0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC = 0.5A, IB = 0.1A
IC = 1.0A, IB = 0.2A
IC = 2.5A, IB = 0.5A
V
tSTG
tF
tSTG
tF
Storage Time
Fall Time
Storage Time
Fall Time
0.6
0.1
µs
µs
µs
µs
V
VCLAMP=200V, IC=2.0A,
IB1=0.4A, VBE(off)=-5V, L=200µH
2.9
2.5
VCC=250V, IC=2.0A,
IB1=0.4A, IB2=-0.4A, TP=30µs
IF = 2A
0.2
VF
Diode Forward Voltage
© 2010 Fairchild Semiconductor Corporation
FJD5304D Rev. A1
www.fairchildsemi.com
2
Typical Performance Characteristics
Figure 1. Static Characteristic
Figure 2. DC Current Gain
4.0
100
10
1
IB=300mA
3.5
TC=125oC
3.0
IB=150mA
2.5
TC= - 25oC
TC=25oC
IB=100mA
2.0
IB=50mA
1.5
1.0
0.5
0.0
0
2
4
6
8
10
12
0.01
0.1
1
10
VCE [V]. COLLECTOR-EMITTER VOLTAGE
IC [A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
10
10
IC = 5 IB
IC = 5 IB
TC=125oC
1
TC=25oC
TC= - 25oC
1
TC= - 25oC
0.1
TC=25oC
TC=125oC
0.01
0.1
0.01
0.1
1
10
0.01
0.1
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 5. Resistive Load Switching Time
Figure 6. Forward Biased Safe Operating Area
10
100
tSTG
Pulse IC_MAX
10
1µs
1
10µs
DC IC_MAX
1
1ms
tF
0.1
0.1
TC = 25oC
Single Pulse
VCC=250V
IC= 5 IB1= - 5 IB2
0.01
0.01
0.1
1
10
1
10
100
1000
IC [A], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
© 2010 Fairchild Semiconductor Corporation
FJD5304D Rev. A1
www.fairchildsemi.com
3
Typical Performance Characteristics (Continued)
Figure 7. Reverse Biased Safe Operating Area
Figure 8. Power Derating Curve
10
Vcc=50V, L = 1mH
9
I
B1=1A, IB2 = -1A
8
7
6
5
4
3
2
1
0
40
20
0
0
100
200
300
400
500
600
700
800
900 1000
0
25
50
75
100
125
150
TC [oC], CASE TEMPERATURE
VCE [V], COLLECTOR-EMITTER VOLTAGE
© 2010 Fairchild Semiconductor Corporation
FJD5304D Rev. A1
www.fairchildsemi.com
4
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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