FJE3303H2TU [ONSEMI]
NPN硅晶体管的平面硅晶体管;型号: | FJE3303H2TU |
厂家: | ONSEMI |
描述: | NPN硅晶体管的平面硅晶体管 局域网 开关 晶体管 |
文件: | 总7页 (文件大小:220K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FJE3303
High Voltage Fast-Switching NPN Power Transistor
•
•
•
High Voltage Capability
High Switching Speed
Suitable for Electronic Ballast and Switching Regulator
TO-126
1
1. Emitter 2.Collector 3.Base
Absolute Maximum Ratings
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Value
700
400
9
Units
V
V
V
Collector-Base Voltage
V
V
CBO
CEO
EBO
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse) *
Base Current (DC)
V
I
I
I
I
1.5
A
C
3
A
CP
B
0.75
1.5
A
Base Current (Pulse) *
A
BP
P
Collector Dissipation (T = 25°C)
20
W
°C
°C
C
C
T
T
Junction Temperature
Storage Temperature
150
-65 ~ 150
J
STG
* Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%
©2005 Fairchild Semiconductor Corporation
FJE3303 Rev. B
1
www.fairchildsemi.com
Electrical Characteristics
T = 25°C unless otherwise noted
C
Symbol
Parameter
Conditions
Min.
700
400
9
Typ.
Max Units
BV
Collector-Base Breakdwon Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
I
I
I
= 500µA, I = 0
V
V
V
CBO
CEO
EBO
C
C
E
E
BV
BV
= 5mA, I = 0
B
= 500µA, I = 0
C
I
I
V
V
= 700V, I = 0
10
10
21
µA
µA
CBO
EBO
CB
EB
E
Emitter Cut-off Current
= 9V, I = 0
C
h
h
DC Current Gain *
V
V
= 2V, I = 0.5A
8
5
FE1
FE2
CE
CE
C
= 2V, I = 1.0A
C
V
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
I
I
I
= 0.5A, I = 0.1A
0.5
1.0
3.0
V
V
V
CE(sat)
C
C
C
B
= 1.0A, I = 0.25A
B
= 1.5A, I = 0.5A
B
V
I
I
= 0.5A, I = 0.1A
1.0
1.2
V
V
BE(sat)
C
C
B
= 1.0A, I = 0.25A
B
f
Current Gain Bandwidth Product
Output Capacitance
Turn On Time
V
V
V
= 10V, I = 0.1A
4
MHz
pF
T
CE
CB
CC
C
C
= 10V, f = 0.1MHz
21
ob
ON
STG
F
t
t
t
= 125V, I = 1A
1.1
4.0
0.7
µs
C
I
= 0.2A, I = -0.2A
B1
B2
Storge Time
µs
R = 125Ω
L
Fall Time
µs
* Pulse Test: PW ≤ 300µs, Duty Cycle ≤ 2%
h
Classification
FE
Classification
H1
H2
h
8 ~ 16
14 ~ 21
FE1
2
www.fairchildsemi.com
FJE3303 Rev. B
Typical Performance Characteristics
Figure 1. Static Characteristic
Figure 2. DC Current Gain
1.6
1.4
100
10
1
VCE = 2V
Ta = 75 o
C
C
Ta = 125 o
C
1.2
IB = 120 mA
Ta = - 25 o
C
Ta = 25 o
1.0
0.8
IB = 40 mA
IB = 20 mA
0.6
0.4
0.2
0.0
0
1
2
3
4
5
6
7
8
9
10
1E-3
0.01
0.1
1
IC [A], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
10
10
Ta = 125 o
C
Ta = 75 o
Ta = 25 o
C
IC = 4 IB
IC = 4 IB
C
1
Ta = - 25 o
C
Ta = 25 o
C
Ta = - 25 o
C
1
Ta = 75 o
C
0.1
Ta = 125 o
C
0.01
0.01
0.1
0.01
0.1
1
10
0.1
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 5. Resistive Load Switching Time
Figure 6. Resistive Load Switching Time
10
10
tSTG
tSTG
1
1
tF
tF
0.1
0.1
IB1 = 120mA, IB2 = - 40mA
IB1 = - IB2 = 0.2A
VCC = 310V
VCC = 125V
0.01
0.1
0.01
0.1
1
1
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
3
www.fairchildsemi.com
FJE3303 Rev. B
Typical Performance Characteristics (Continued)
Figure 7. Forward Biased Safe Operating Area
Figure 8. Reverse Biased Safe Operating Area
10
10
IC (Pulse)
1ms
100µs
5ms
IC (DC)
1
1
0.1
TC = 25oC
Single Pulse
IB1 = 1A, RB2 = 0
VCC = 50V, L =1 mH
0.01
0.1
1
10
100
1000
100
1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 9. Power Derating
30
25
20
15
10
5
0
0
25
50
75
100
125
150
175
Ta [oC], AMBIENT TEMPERATURE
4
www.fairchildsemi.com
FJE3303 Rev. B
8.30
7.70
3.45
3.05
4.00
3.80
11.20
10.80
14.20 MAX
3.20
1.35
1.95
1.55
1.70
1.50
1.00
E
D
0.85
3X
0.65
#1
0.60
0.45
M
3X
0.254
2.29
TOP VIEW
3°
SIDE VIEW
PRODUCTION
CODE
TERMINAL
LENGTH "D"
TERMINAL
LENGTH "E"
TSSTU
TSTU
NONE
(STD LENGTH)
3.45 - 4.05
2.36 - 2.96
6.45-7.45
5.36-6.36
FRONT VIEW
12.76 - 13.36
15.76-16.76
NOTES:
A. NO INDUSTRY STANDARD APPLIES TO THIS
PACKAGE
B. ALL DIMENSIONS ARE IN MILLIMETERS
C. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD
FLASH, AND TIE BAR PROTRUSIONS
D
FOR TERMINAL LENGTH "D", REFER TO TABLE
FOR TERMINAL LENGTH "E", REFER TO TABLE
E
F. DRAWING FILENAME: MKT-TO126AArev2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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