FJP13007TU [ONSEMI]
NPN芯片晶体管;
| 型号： | FJP13007TU |
| 厂家： | 
ONSEMI |
| 描述： | NPN芯片晶体管 局域网 开关 晶体管 |
| 文件： | 总6页 (文件大小：251K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductor
Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FJP13007
High Voltage Fast-Switching NPN Power Transistor
Features
• High Voltage High Speed Power Switch Application
• High Voltage Capability
• High Switching Speed
• Suitable for Electronic Ballast and Switching Mode Power Supply
TO-220
1
1.Base 2.Collector 3.Emitter
Ordering Information
Part Number
FJP13007TU
Top Mark
J13007
Package
Packing Method
TO-220 3L (Dual Gauge)
TO-220 3L (Single Gauge)
TO-220 3L (Dual Gauge)
TO-220 3L (Dual Gauge)
TO-220 3L (Dual Gauge)
Rail
Rail
Rail
Rail
Rail
FJP13007H1TU
J13007-1
J13007-1
J13007-2
J13007-2
FJP13007H1TU-F080
FJP13007H2TU
FJP13007H2TU-F080
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
700
400
V
9
V
8
A
ICP
16
A
IB
4
80
A
PC
Collector Dissipation (TC = 25°C)
Junction Temperature
W
°C
°C
TJ
150
TSTG
Storage Temperature Range
-65 to 150
Publication Order Number:
FJP13007/D
© 2005 Semiconductor Components Industries, LLC.
September-2017, Rev. 2
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol
BVCEO
IEBO
Parameter
Conditions
Min.
Typ.
Max.
Unit
V
Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0
400
Emitter Cut-Off Current
DC Current Gain(1)
DC Current Gain(1)
VEB = 9 V, IC = 0
1
mA
hFE
1
2
VCE = 5 V, IC = 2 A
VCE = 5 V, IC = 5 A
IC = 2 A, IB = 0.4 A
IC = 5 A, IB = 1 A
8
5
60
hFE
30
1.0
2.0
3.0
1.2
1.6
V
CE(sat)
Collector-Emitter Saturation Voltage
V
V
IC = 8 A, IB = 2 A
IC = 2 A, IB = 0.4 A
IC = 5 A, IB = 1 A
VBE(sat)
Collector-Base Saturation Voltage
fT
Cob
tON
tSTG
tF
Current Gain Bandwidth Product
Output Capacitance
Turn-On Time
VCE = 10 V, IC = 0.5 A
VCB = 10 V, f = 0.1 MHz
4
MHz
pF
110
1.6
3.0
0.7
μs
VCC = 125 V, IC = 5 A,
IB1 = -IB2 = 1 A,
RL = 25 Ω
Storage Time
μs
Fall Time
μs
Note:
1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%.
hFE Classification
Classification
H1
H2
26 ~ 39
hFE1
15 ~ 28
www.onsemi.com
2
Typical Performance Characteristics
10
100
IC = 3 IB
VCE = 5V
1
VBE(sat)
VCE(sat)
10
0.1
0.01
0.1
1
0.1
1
10
100
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC Current Gain
Figure 2. Saturation Voltage
1000
1000
100
10
tR
100
10
1
tD, VBE(off)=5V
VCC=125V
IC=5IB
0.1
1
10
100
1000
0.1
1
10
VCB[V], COLLECTOR-BASE VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 3. Collector Output Capacitance
Figure 4. Turn-On Time
100
10
10000
VCC=125V
IC=5IB
tSTG
10μs
1ms
DC
100μs
1000
100
10
1
tF
0.1
0.01
1
10
100
1000
0.1
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 6. Forward Biased Safe Operating Area
Figure 5. Turn-Off Time
www.onsemi.com
3
Typical Performance Characteristics (Continued)
100
100
90
80
70
60
50
40
30
20
10
0
Vcc=50V,
IB1=1A, IB2 = -1A
L = 1mH
10
1
0.1
0.01
10
100
1000
10000
0
25
50
75
100
125
150
175
TC[oC], CASE TEMPERATURE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 8. Power Derating
Figure 7. Reverse Biased Safe Operating Area
www.onsemi.com
4
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
www.onsemi.com
❖
相关型号：
FJP1943O
Power Bipolar Transistor, 15A I(C), 230V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220AB, 3 PIN
FAIRCHILD
FJP1943OTU
Power Bipolar Transistor, 17A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
FAIRCHILD
FJP1943RTU
Power Bipolar Transistor, 17A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明