FJP13009H2TU [ONSEMI]
高压快速开关 NPN 功率晶体管;
| 型号： | FJP13009H2TU |
| 厂家： | 
ONSEMI |
| 描述： | 高压快速开关 NPN 功率晶体管 开关 高压 晶体管 |
| 文件： | 总7页 (文件大小：282K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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September 2014
FJP13009
High-Voltage Fast-Switching NPN Power Transistor
Description
Features
• High-Voltage Capability
• High Switching Speed
The FJP13009 is a 700 V, 12 A NPN silicon epitaxial pla-
nar transistor. The FJP13009 is available with multiple
hFE bin classes for ease of design use. The FJP13009 is
designed for high speed switching applications which uti-
lizes the industry standard TO-220 package offering flex-
ibility in design and excellent power dissipation.
Applications
• Electronic Ballast
• Switching Regulator
• Motor Control
• Switched Mode Power Supply
TO-220
1
1.Base 2.Collector 3.Emitter
Ordering Information
Part Number(1)
FJP13009TU
Top Mark
J13009
Package
TO-220 3L
TO-220 3L
Packing Method
Rail
Rail
FJP13009H2TU
J13009-2
Notes:
1. The affix “-H2” means the hFE classification. The suffix “-TU” means the tube packing method.
© 2003 Fairchild Semiconductor Corporation
FJP13009 Rev. 1.2.1
www.fairchildsemi.com
Absolute Maximum Ratings(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
700
400
V
9
V
12
A
ICP
24
6
A
IB
A
PD
Total Device Dissipation (TC = 25°C)
Junction Temperature
100
W
°C
°C
TJ
150
TSTG
Storage Temperature Range
-65 to +150
Note:
2. These ratings are based on a maximum junction temperature of 150°C. These are steady-state limits. Fairchild
Semiconductor should be consulted on application involving pulsed or low-duty-cycle operations.
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Typ.
Max
Unit
V
VCEO(sus) Collector-Emitter Sustaining Voltage IC = 10 mA, IB = 0
400
IEBO
hFE1
hFE2
Emitter Cut-Off Current
DC Current Gain(3)
VEB = 9 V, IC = 0
1
mA
VCE = 5 V, IC = 5 A
VCE = 5 V, IC = 8 A
IC = 5 A, IB = 1 A
8
6
40
30
1.0
1.5
3.0
1.2
1.6
Collector-Emitter Saturation
Voltage(3)
V
CE(sat)
IC = 8 A, IB = 1.6 A
IC = 12 A, IB = 3 A
IC = 5 A, IB = 1 A
V
V
V
BE(sat) Base-Emitter Saturation Voltage(3)
IC = 8 A, IB = 1.6 A
VCB = 10 V, f = 0.1 MHz
VCE = 10 V, IC = 0.5 A
Cob
fT
Output Capacitance
Current Gain Bandwidth Product
Turn-On Time
180
pF
4
MHz
tON
tSTG
tF
1.1
3.0
0.7
VCC = 125 V, IC = 8 A,
IB1 = - IB2 = 1.6 A,
RL = 15.6 Ω
Storage Time
μs
Fall Time
Note:
3. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%
hFE Classification
Classification
H1
H2
15 ~ 28
hFE1
8 ~ 17
© 2003 Fairchild Semiconductor Corporation
FJP13009 Rev. 1.2.1
www.fairchildsemi.com
2
Typical Performance Characteristics
10
100
IC = 3 IB
VCE = 5V
VBE(sat)
1
10
0.1
VCE(sat)
0.01
0.1
1
0.1
1
10
100
1
10
100
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC Current Gain
Figure 2. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
10000
1000
VCC=125V
IC=5IB
1000
100
10
1
tR
tD, VBE(off)=5V
100
10
0.1
1
10
100
0.1
1
10
100
1000
VCB[V], COLLECTOR BASE VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 3. Collector Output Capacitance
Figure 4. Turn-On Time
10000
100
10
VCC=125V
IC=5IB
tSTG
1000
1
0.1
0.01
tF
100
0.1
1
10
100
1
10
100
1000
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Turn-Off Time
Figure 6. Forward Bias Safe Operating Area
© 2003 Fairchild Semiconductor Corporation
FJP13009 Rev. 1.2.1
www.fairchildsemi.com
3
Typical Performance Characteristics (Continued)
100
120
100
80
60
40
20
0
Vcc=50V,
I
B1=1A, IB2 = -1A
L = 1mH
10
1
0.1
0.01
10
100
1000
10000
0
25
50
75
100
125
150
175
TC[oC], CASE TEMPERATURE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 7. Reverse Bias Safe Operating Area
Figure 8. Power Derating
© 2003 Fairchild Semiconductor Corporation
FJP13009 Rev. 1.2.1
www.fairchildsemi.com
4
SUPPLIER "B" PACKAGE
SHAPE
ꢀꢁꢂꢂ
3.50
10.67
9.65
SUPPLIER "A" PACKAGE
SHAPE
E
3.40
2.50
16.30
13.90
IF PRESENT, SEE NOTE "D"
E
16.51
15.42
9.40
8.13
E
1
2
3
4.10
2.70
[2.46]
C
14.04
12.70
2.13
2.06
FRONT VIEWS
H
4.70
4.00
1.62
1.42
1.62
1.10
2.67
2.40
"A1"
8.65
7.59
1.00
0.55
SEE NOTE "F"
ꢃ
ꢄ
ꢃ
ꢄ
6.69
6.06
OPTIONAL
CHAMFER
E
14.30
11.50
NOTE "I"
BOTTOM VIEW
NOTES:
A) REFERENCE JEDEC, TO-220, VARIATION AB
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [ ].
D) LOCATION OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
3
2
1
E DOES NOT COMPLY JEDEC STANDARD VALUE.
F) "A1" DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 - 0.61
DUAL GAUGE = 1.10 - 1.45
G) DRAWING FILE NAME: TO220B03REV9
H
PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
0.60
0.36
2.85
2.10
BACK VIEW
SIDE VIEW
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
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