FJP2145TU_技术文档

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March 2015

FJP2145

ESBC^™Rated NPN Power Transistor

Description

ESBC Features (FDC655 MOSFET)

(1)

The FJP2145 is a low-cost, high-performance power

switch designed to provide the best performance when

used in an ESBC^™configuration in applications such as:

power supplies, motor drivers, smart grid, or ignition

switches. The power switch is designed to operate up to

1100 volts and up to 5 amps, while providing exception-

ally low on-resistance and very low switching losses.

V_CS(ON)

I_C

Equiv. R_CS(ON)

0.21 V

2 A

0.105 Ω

• Low Equivalent On Resistance

• Very Fast Switch: 150 kHz

• Wide RBSOA: Up to 1100 V

• Avalanche Rated

The ESBC^™switch can be driven using off-the-shelf

power supply controllers or drivers. The ESBC^™MOS-

FET is a low-voltage, low-cost, surface-mount device that

combines low-input capacitance and fast switching. The

ESBC^™configuration further minimizes the required driv-

ing power because it does not have Miller capacitance.

• Low Driving Capacitance, No Miller Capacitance

• Low Switching Losses

• Reliable HV Switch: No False Triggering due to

High dv/dt Transients

Applications

The FJP2145 provides exceptional reliability and a large

operating range due to its square reverse-bias-safe-oper-

ating-area (RBSOA) and rugged design. The device is

avalanche rated and has no parasitic transistors, so is not

prone to static dv/dt failures.

• High-Voltage, High-Speed Power Switch

• Emitter-Switched Bipolar/MOSFET Cascode

(ESBC^™)

• Smart Meters, Smart Breakers, SMPS,

HV Industrial Power Supplies

The power switch is manufactured using a dedicated

high-voltage bipolar process and is packaged in a high-

voltage TO-220 package.

• Motor Drivers and Ignition Drivers

C

2

C

FJP2145

FDC655

B

1

B

TO-220

1

G

1.Base 2.Collector 3.Emitter

3

E

S

Figure 1. Pin Configuration

Figure 2. Internal Schematic Diagram

Figure 3. ESBC Configuration⁽²⁾

Ordering Information

Part Number

Marking

Package

Packing Method

FJP2145TU

J2145

TO-220

TUBE

Notes:

1. Figure of Merit.

2. Other Fairchild MOSFETs can be used in this ESBC application.

FJP2145 Rev. 1.1

www.fairchildsemi.com

Absolute Maximum Ratings⁽³⁾

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at T_A= 25°C unless otherwise noted.

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

V

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

1100

800

V

7

V

5

1.5

A

I_B

Base Current

A

P_C

Collector Dissipation (T_C= 25°C)

Operating and Junction Temperature Range

Storage Temperature Range

120

W

°C

mJ

T_J

-55 to +125

-55 to +150

15

T_STG

EAR⁽⁴⁾

Avalanche Energy (T_J= 25°C, 1.2 mH)

Notes:

3. Pulse test is pulse width ≤ 5 ms, duty cycle ≤ 10%.

4. Lab characterization data only for reference.

Thermal Characteristics

Values are at T_A= 25°C unless otherwise noted.

Symbol

R_θjC

Parameter

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Max.

1.04

Unit

°C/W

R_θjA

78.72

FJP2145 Rev. 1.1

www.fairchildsemi.com

2

Electrical Characteristics⁽⁵⁾

Values are at T_A= 25°C unless otherwise noted.

Symbol

Parameter

Conditions

I_C= 1 mA, I_E= 0

Min. Typ. Max. Unit

BV_CBO

Collector-Base Breakdown Voltage

1100

800

7

V

Collector-Emitter Breakdown

Voltage

BV_CEO

I_C= 5 mA, I_B= 0

V

BV_EBO

I_CBO

I_EBO

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

I_E= 1 mA, I_C= 0

V

V_CB= 800 V, I_E= 0

10

40

μA

V_EB= 5 V, I_C= 0

h_FE1

h_FE2

V_CE= 5 V, I_C= 0.2 A

V_CE= 5 V, I_C= 1 A

20

8

DC Current Gain

I_C= 0.25 A, I_B= 0.05 A

I_C= 0.5 A, I_B= 0.167 A

I_C= 1 A, I_B= 0.33 A

I_C= 1.5 A, I_B= 0.3 A

I_C= 500 mA, I_B= 50 mA

I_C= 1.5 A, I_B= 0.3 A

I_C= 2 A, I_B= 0.4 A

0.049

0.052

0.082

V

V_CE(sat)

Collector-Emitter Saturation Voltage

V

0.151 2.000

0.752

V

V_BE(sat)

Base-Emitter Saturation Voltage

0.833 1.500

0.855

V

C_IB

C_OB

f_T

Input Capacitance

V_EB= 5 V, I_C= 0, f = 1 MHz

V_CB= 200 V, I_E= 0, f = 1 MHz

V_CE= 10 V, I_C= 0.2 A

1.618

pF

MHz

Output Capacitance

11.39

Current Gain Bandwidth Product

15

Note:

5. Pulse test is pulse width ≤ 5 ms, duty cycle ≤ 10%.

FJP2145 Rev. 1.1

www.fairchildsemi.com

3

ESBC-Configured Electrical Characteristics⁽⁶⁾

Values are at T_A= 25°C unless otherwise noted.

Symbol

Parameter

Conditions

I_C= 0.1 A,V_CE= 10 V

Min. Typ. Max. Unit

Current Gain Bandwidth

Product

f_T

28.40

MHz

It_f

t_s

Inductive Current Fall Time

Inductive Storage Time

95

0.13

135

80

ns

V_CC= 100 V, V_GS= 10 V, R_G= 4 7Ω,

V_Clamp= 500 V, I_C= 0.5 A,

I_B= 0.05 A, H_FE= 10, L_C= 166 μH,

SRF = 684 kHz

Vt_f

Vt_r

t_c

Inductive Voltage Fall Time

Inductive Voltage Rise Time

Inductive Crossover Time

Inductive Current Fall Time

Inductive Storage Time

115

50

It_f

V_CC= 100 V, V_GS= 10 V, R_G= 47 Ω,

V_Clamp= 500 V, I_C= 1 A,

I_B= 0.2 A, H_FE= 5, L_C= 166 μH,

SRF = 684 kHz

t_s

0.34

150

60

Vt_f

Vt_r

t_c

Inductive Voltage Fall Time

Inductive Voltage Rise Time

Inductive Crossover Time

95

Maximum Collector-Source

Voltage at Turn-off without

Snubber

h_FE= 5, I_C= 2 A

V_CSW

1100

V

Gate-Source Leakage

Current

V_GS= ± 20 V

I_GS(OS)

1

nA

V_GS= 10 V, I_C= 2 A, I_B= 0.67 A, h_FE= 3

V_GS= 10 V, I_C= 1 A, I_B= 0.33 A, h_FE= 3

V_GS= 10 V, I_C= 0.5 A, I_B= 0.17 A, h_FE= 3

V_GS= 10 V, I_C= 0.3 A, I_B= 0.06 A, h_FE= 5

V_BS= V_GS,I_B= 250 μA

0.202

0.111

0.067

0.060

1.9

V

Collector-Source On

Voltage

V_CS(ON)

V_GS(th)

C_iss

Q_GS(tot)

Gate Threshold Voltage

Input Capacitance

(V_GS= V_CB= 0)

V_CS= 25 V, f = 1 MHz

470

9

pF

nC

Gate-Source Change

V_CB= 0

V

_GS= 10 V, I_C= 6.3 A, V_CS= 25 V

_GS= 10 V, I_D= 6.3 A

V

21

26

30

mΩ

Static Drain-to-Source

On Resistance

V_GS= 4.5 V, I_D= 5.5 A

R_DS(ON)

V_GS= 10 V, I_D= 6.3 A, T_J= 125°C

Note:

6. A typical FDC655 MOSFET was used for the specifications above. Values could vary if other Fairchild MOSFETs

are used.

FJP2145 Rev. 1.1

www.fairchildsemi.com

4

Typical Performance Characteristics

5

100

10

1

V_CE= 5 V

I_B= 1 A

4

0.9 A

0.8 A

0.7 A

0.6 A

3

0.5 A

0.4 A

0.3 A

2

0.2 A

0.1 A

125 ^oC

25 ^oC

-25 ^oC

-40 ^oC

1

0

1

2

3

4

5

6

7

1E-3

0.01

0.1

1

10

V_CE[V], COLLECTOR-EMITTER VOLTAGE

I_C[A], COLLECTOR CURRENT

Figure 4. Static Characteristics

Figure 5. DC Current Gain

10

HFE = 5

HFE = 3

1

0.1

0.01

o

125

C

125 ^o

25 ^o

C

25

- 25

- 40

C

-25 ^o

-40 ^o

C

o

0.01

1E-3

0.01

0.1

1

10

1E-3

0.01

0.1

1

10

I_C[A], COLLECTOR CURRENT

Figure 6. Collector-Emitter Saturation Voltage

h_FE= 3

Figure 7. Collector-Emitter Saturation Voltage

h_FE= 5

10

HFE = 20

HFE = 10

1

0.1

125 ^o

25 ^o

-25 ^o

-40 ^o

C

125 ^oC

25 ^o

C

0.01

1E-3

0.01

1E-3

0.01

0.1

1

10

0.01

0.1

1

10

I_C[A], COLLECTOR CURRENT

Figure 8. Collector-Emitter Saturation Voltage

h_FE= 10

Figure 9. Collector-Emitter Saturation Voltage

h_FE= 20

FJP2145 Rev. 1.1

www.fairchildsemi.com

5

Typical Performance Characteristics (Continued)

1000

100

10

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

I_C= 0.4 A

0.4

0.2

0.0

I_C= 1 A

I_C= 2 A

I_C= 3 A

1

0.01

0.1

1

10

100

1000

COLLECTOR-BASE VOLTAGE[V]

I_B[mA], BASE CURRENT

Figure 10. Typical Collector Saturation Voltage

Figure 11. Capacitance

150

H_FE=5, 10, T_J= 25^oC, L=166 uH, SRF=684 KHz

H_FE= 5, 10, T_J= 25^oC, L=166 uH SRF = 684 KHz, 2I_B1=I_B2, No peaking

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

125

tf hfe = 5 Common Emitter

tf hfe = 10 Common Emitter

tf hfe = 5 ESBC

100

tf hfe = 5 Common Emitter

tf hfe = 10 Common Emitter

tf hfe = 5 ESBC

tf hfe = 10 ESBC

75

50

25

0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

I_C[A], COLLECTOR CURRENT

Figure 12. Inductive Load Collector Current

Fall - Time (t_f)

Figure 13. Inductive Load Collector Current

Storage - Time (t_stg

)

180

H_FE=5, 10, T_J= 25^oC, L=166 uH, SRF=684 KHz

500

450

400

350

300

250

200

150

100

50

160

140

tf hfe = 5 Common Emitter

tf hfe = 10 Common Emitter

tf hfe = 5 ESBC

tf hfe = 10 ESBC

tf hfe = 5 Common Emitter

tf hfe = 10 Common Emitter

tf hfe = 5 ESBC

tf hfe = 10 ESBC

120

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

I_C[A], COLLECTOR CURRENT

Figure 14. Inductive Load Collector Voltage

Fall - Time (t_f)

Figure 15. Inductive Load Collector Voltage

Rise - Time (t_r)

FJP2145 Rev. 1.1

www.fairchildsemi.com

6

Typical Performance Characteristics (Continued)

7

6

5

4

3

2

1

H_FE=5, 10, T_J= 25^oC, L=166 uH, SRF=684 KHz

600

V_DD= +/- 50 V, R_LOAD= OPEN, H_FE=4

550

500

450

tf hfe = 5 Common Emitter

tf hfe = 10 Common Emitter

tf hfe = 5 ESBC

tf hfe = 10 ESBC

400

350

300

250

200

150

100

50

600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

V_CE[V], COLLECTOR-EMITTER VOLTAGE

I_C[A], COLLECTOR CURRENT

Figure 16. Inductive Load Collector Current / Voltage

Crossover (t_c)

Figure 17. BJT RBSOA

7

T_C= 25^oC

V_DD= +/-50 V, R_LOAD= Open, H_FE= 4

Single 80 μs Pulse

6

5

4

3

2

1

10

1

0

0.1

600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700

0

500

1000

1500

2000

V_CE[V], COLLECTOR-EMITTER VOLTAGE

Figure 18. ESBC RBSOA

Figure 19. Crossover FBSOA

150

120

90

60

30

0

25

50

75

100

125

150

175

T_C[^oC], CASE TEMPERATURE

Figure 20. Power Derating

FJP2145 Rev. 1.1

www.fairchildsemi.com

7

Test Circuits

ꢀ

Figure 21. Test Circuit For Inductive Load and Reverse Bias Safe Operating

}

sT

}

A

p_j

p_i

A

p_j

k|{

A

k|{

R\G}

ꢀ

Figure 22. Energy Rating Test Circuit

Figure 24. FBSOA

Figure 23. Ft Measurement

FJP2145 Rev. 1.1

www.fairchildsemi.com

8

Test Circuits (Continued)

Figure 25. Simplified Saturated Switch Driver Circuit

Functional Test Waveforms

Figure 26. Crossover Time Measurement

t_off

90% Vce

90% Ic

10% Vce

10% Ic

Figure 27. Saturated Switching Waveform

FJP2145 Rev. 1.1

www.fairchildsemi.com

9

Functional Test Waveforms (Continued)

Figure 29. Storage Time - ESBC FET Gate (Off) to I_C

Fall - Time

Figure 28. Storage Time - Common Emitter Base

Turn Off (Ib2) to I_CFall - Time

FJP2145 Rev. 1.1

www.fairchildsemi.com

10

Very Wide Input Voltage Range Supply

24V@3.3A

Y[}gXUY\h

`

X

Y

tiyYWX\Wj{{|

XWWWm

Z\}

XWWWm

Z\}

X

100 - 800V DC

YWWTXWWW}Gkj

30Watts

ZW~

X

xGyGXYWro¡

^

\

[

Y

Z

|m[WW^

Y^Wr

100kΩ

Z

w]rl[[Wh

680μF

[\W}

XYWm

twX]W_i[^Xh

YY}

YL

100kΩ

Y^Wr

FJP2145

mqhmzX\XWh{|

Xu[X[_

Y^Wr

100kΩ

oXXhnX}t

]

Q

680μF

[\W}

XYWm

}

FDC655

mkj]\\

v|{

jz

\

o}

_

100kKΩ

Y^Wr

ttzkZW^W

XYTX[}

Z

[

XWm

mi

kl{

X

XY}¡

100kΩ

Y^Wr

Y

[}

680μF

XYWm

[\W}

Xu[X[_~z

XWWm

Y\}

100kΩ

Y^Wr

XUWhG

2.5A limit

QGtGGG

Figure 30. 30 W; Secondary-Side Regulation: 3 Capacitor Input; Quasi Resonant

Driving ESBC Switches

Fairchild

Proprietary

Figure 31. V_CCDerived

Figure 33. Proportional Drive

Figure 32. V_BIASSupply Derived

FJP2145 Rev. 1.1

www.fairchildsemi.com

11

Physical Dimensions

Figure 34. TO-220, MOLDED, 3-LEAD, JEDEC VARIDATION AB

FJP2145 Rev. 1.1

www.fairchildsemi.com

12

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not

intended to be an exhaustive list of all such trademarks.

OPTOPLANAR^®

AccuPower¥

AttitudeEngine™

Awinda^®

F-PFS¥

®*

FRFET^®

Global Power Resource^SM

GreenBridge¥

Green FPS¥

Green FPS¥ e-Series¥

Gmax¥

TinyBoost^®

TinyBuck^®

TinyCalc¥

TinyLogic^®

TINYOPTO¥

TinyPower¥

TinyPWM¥

TinyWire¥

TranSiC¥

®

AX-CAP^®*

PowerTrench^®

PowerXS™

Programmable Active Droop¥

QFET^®

BitSiC¥

Build it Now¥

CorePLUS¥

CorePOWER¥

CROSSVOLT¥

CTL¥

GTO¥

IntelliMAX¥

QS¥

Quiet Series¥

RapidConfigure¥

¥

ISOPLANAR¥

Making Small Speakers Sound Louder

and Better™

MegaBuck¥

MICROCOUPLER¥

MicroFET¥

Current Transfer Logic¥

DEUXPEED^®

Dual Cool™

EcoSPARK^®

EfficientMax¥

TriFault Detect¥

TRUECURRENT^®*

μSerDes¥

Saving our world, 1mW/W/kW at a time™

SignalWise¥

SmartMax¥

SMART START¥

Solutions for Your Success¥

SPM^®

ESBC¥

MicroPak¥

®

UHC^®

MicroPak2¥

MillerDrive¥

MotionMax¥

MotionGrid^®

Ultra FRFET¥

UniFET¥

VCX¥

VisualMax¥

VoltagePlus¥

XS™

Fairchild^®

STEALTH¥

Fairchild Semiconductor^®

FACT Quiet Series¥

FACT^®

SuperFET^®

SuperSOT¥-3

MTi^®

SuperSOT¥-6

SuperSOT¥-8

SupreMOS^®

MTx^®

FAST^®

MVN^®

FastvCore¥

FETBench¥

FPS¥

mWSaver^®

Xsens™

SyncFET¥

Sync-Lock™

OptoHiT¥

௝❺

™

OPTOLOGIC^®

* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

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accordance with instructions for use provided in the labeling, can be

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Definition of Terms

Datasheet Identification

Product Status

Definition

Datasheet contains the design specifications for product development. Specifications may change

in any manner without notice.

Advance Information

Formative / In Design

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild

Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make

changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.

The datasheet is for reference information only.

Preliminary

No Identification Needed

Obsolete

First Production

Full Production

Not In Production

Rev. I73

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1


型号：	FJP2145TU
厂家：	ONSEMI
描述：	ESBC™ 额定NPN功率晶体管晶体管
文件：	总15页 (文件大小：929K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FJP2145TU [ONSEMI]

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