FJP5555TU [ONSEMI]
NPN芯片晶体管;Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
June 2013
FJP5555
NPN Silicon Transistor
Features
• Fast Speed Switching
• Wide Safe Operating Area
• High Voltage Capability
2
C
E
1
B
Application
• Electronic Ballast
TO-220
1
3
1.Base 2.Collector 3.Emitter
• Switch Mode Power Supplies
Ordering Information
Part Number
Marking
Package
Packing Method
FJP5555TU
J5555
TO-220
Rail
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
BVCBO
BVCEO
BVEBO
IC
Parameter
Value
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
1050
400
V
14
V
5
A
ICP
10
A
IB
2
A
IBP
Base Current (Pulse)
Junction Temperature
Storage Temperature
4
A
TJ
150
°C
°C
TSTG
- 55 to +150
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
1.38
75
Units
W
TA = 25°C
C = 25°C
PD
Total Device Dissipation
T
W
(1)
Rθja
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
90
°C/W
°C/W
(2)
Rθjc
1.66
Notes:
1. Rθja test board and fixture under natural convection, JESD51-10 recommended thermal test board.
2. Rθjc test fixture under infinite cooling condition.
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
Rev. 1.2.0
1
Electrical Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Symbol
BVCBO
BVCEO
BVEBO
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Conditions
IC = 500 μA, IE = 0
IC = 5 mA, IB = 0
Min.
1050
400
14
Typ.
Max. Units
V
V
V
IE = 500 μA, IC = 0
VCE = 5 V, IC = 10 mA
VCE = 3 V, IC = 0.8 A
IC = 1 A, IB = 0.2 A
IC = 3.5 A, IB = 1.0 A
IC = 3.5 A, IB = 1.0 A
VCB = 10 V, f = 1 MHz
10
hFE
DC Current Gain
20
40
0.5
1.5
1.2
V
V
VCE(sat) Collector-Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
V
Cob
tON
tSTG
tF
Output Capacitance
Turn-On Time
Storage Time
Fall Time
45
pF
μs
μs
μs
μs
μs
μs
mJ
1.0
1.2
0.3
2.0
2.5
0.3
VCC = 125 V, IC = 0.5 A,
IB1 = 45 mA, IB2 = 0.5 A,
RL = 250 Ω
tON
tSTG
tF
Turn-On Time
Storage Time
Fall Time
VCC = 250 V, IC = 2.5 A,
IB1 = 0.5 A, IB2 = 1.0 A,
RL = 100 Ω
6
EAS
Avalanche Energy
L = 2 mH
Note:
3. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%.
© 2008 Fairchild Semiconductor Corporation
Rev. 1.2.0
www.fairchildsemi.com
2
Typical Performance Characteristics
5.0
4.5
100
10
1
Ta = 75oC
VCE = 5V
Ta = 125oC
4.0
IB = 600mA
3.5
3.0
Ta = 25oC
Ta = - 25oC
IB = 200mA
IB = 100mA
2.5
2.0
1.5
1.0
0.5
0.0
0
1
2
3
4
5
6
7
8
9
1E-3
0.01
0.1
1
10
VCE [V], COLLECTOR-EMITTER VOLTAGE
IC [A], COLLECTOR CURRENT
Figure 1. Static Characteristics
Figure 2. DC Current Gain
10
IC = 5 IB
IC = 5 IB
10
Ta = 25oC
Ta = 125oC
Ta = 75oC
Ta = - 25oC
Ta = 125oC
1
1
Ta = - 25oC
Ta = 25oC
Ta = 75oC
0.1
0.1
0.01
0.01
0.01
0.1
1
10
0.01
0.1
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 3. Saturation Voltage
Figure 4. Saturation Voltage
1
tSTG
1
tSTG
tF
0.1
0.1
tF
VCC=125V
VCC=250V
IB1=45mA, IB2=0.5A
IB1=0.5A, IB2=1.0A
0.01
0.1
0.01
0.1
1
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 5. Resistive Load Switching
Figure 6. Resistive Load Switching
© 2008 Fairchild Semiconductor Corporation
Rev. 1.2.0
www.fairchildsemi.com
3
Typical Performance Characteristics (Continued)
100
90
80
70
60
50
40
30
20
10
0
10
VCC=50V, L=1mH
IB1=3A, RB2=0
1
10
0
25
50
75
100
125
150
175
100
1000
Tc[oC], CASE TEMPERATURE
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 7. Reverse Biased Safe Operating Area
Figure 8. Power Derating
100
ICP(max)
IC(max)
10ms
100ms
10
1
DC
0.1
0.01
Tc=25oC
Single Pulse
1
10
100
1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 9. Forward Biased Safe Operating Area
© 2008 Fairchild Semiconductor Corporation
Rev. 1.2.0
www.fairchildsemi.com
4
SUPPLIER "B" PACKAGE
SHAPE
ꢀꢁꢂꢂ
3.50
10.67
9.65
SUPPLIER "A" PACKAGE
SHAPE
E
3.40
2.50
16.30
13.90
IF PRESENT, SEE NOTE "D"
E
16.51
15.42
9.40
8.13
E
1
2
3
4.10
2.70
[2.46]
C
14.04
12.70
2.13
2.06
FRONT VIEWS
H
4.70
4.00
1.62
1.42
1.62
1.10
2.67
2.40
"A1"
8.65
7.59
1.00
0.55
SEE NOTE "F"
ꢃ
ꢄ
ꢃ
ꢄ
6.69
6.06
OPTIONAL
CHAMFER
E
14.30
11.50
NOTE "I"
BOTTOM VIEW
NOTES:
A) REFERENCE JEDEC, TO-220, VARIATION AB
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [ ].
D) LOCATION OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
3
2
1
E DOES NOT COMPLY JEDEC STANDARD VALUE.
F) "A1" DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 - 0.61
DUAL GAUGE = 1.10 - 1.45
G) DRAWING FILE NAME: TO220B03REV9
H
PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
0.60
0.36
2.85
2.10
BACK VIEW
SIDE VIEW
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
www.onsemi.com
相关型号:
FJP9100TU
Power Bipolar Transistor, 4A I(C), 275V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-220, 3 PIN
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明