FJPF13007H1TTU [ONSEMI]
NPN 硅晶体管;型号: | FJPF13007H1TTU |
厂家: | ONSEMI |
描述: | NPN 硅晶体管 局域网 开关 晶体管 |
文件: | 总7页 (文件大小:216K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FJPF13007
High Voltage Fast-Switching NPN Power Transistor
•
•
•
High Voltage Capability
High Switching Speed
Suitable for Electronic Ballast and Switching Mode Power Supply
TO-220F
1
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Value
Units
V
V
V
Collector-Base Voltage
700
V
V
CBO
CEO
EBO
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
400
9
V
I
I
I
8
A
C
16
4
A
CP
B
A
P
Collector Dissipation (T = 25°C)
40
W
°C
°C
C
C
T
T
Junction Temperature
Storage Temperature
150
J
-65 ~ 150
STG
©2005 Fairchild Semiconductor Corporation
FJPF13007 Rev. C
1
www.fairchildsemi.com
Electrical Characteristics
T = 25°C unless otherwise noted
C
Symbol
Parameter
Conditions
Min.
Typ.
Max Units
BV
Collector-Emitter Breakdown Voltage
Emitter Cut-off Current
I
= 10mA, I = 0
400
V
CEO
C
B
I
V
= 9V, I = 0
1
µA
EBO
EB
C
h
h
DC Current Gain
V
V
= 5V, I = 2A
8
5
60
30
FE1
FE2
CE
CE
C
= 5V, I = 5A
C
V
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
I
I
I
= 2A, I = 0.4A
1.0
2.0
3.0
V
V
V
CE(sat)
C
C
C
B
= 5A, I = 1A
B
= 8A, I = 2A
B
V
I
I
= 2A, I = 0.4A
1.2
1.6
V
V
BE(sat)
C
C
B
= 5A, I = 1A
B
f
Current Gain Bandwidth Product
Output Capacitance
Turn On Time
V
V
V
= 10V, I = 0.5A
4
MHz
pF
T
CE
CB
CC
C
C
= 10V, f = 0.1MHz
110
ob
ON
STG
F
t
t
t
= 125V, I = 5A
1.6
3.0
0.7
µs
C
I
= -I = 1A
B1
B2
Storge Time
µs
R = 25Ω
L
Fall Time
µs
* Pulse Test: PW ≤ 300µs, Duty Cycle ≤ 2%
h
Classification
FE
Classification
H1
H2
h
15 ~ 28
26 ~ 39
FE1
2
www.fairchildsemi.com
FJPF13007 Rev. C
Typical Performance Characteristics
Figure 1. DC Current Gain
Figure 2. Saturation Voltage
100
10
IC = 3 IB
VCE = 5V
1
VBE(sat)
VCE(sat)
10
0.1
1
0.1
0.01
0.1
1
10
1
10
100
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 3. Collector Output Capacitance
Figure 4. Turn On Time
1000
100
10
1000
tR
100
10
1
tD, VBE(off)=5V
VCC=125V
IC=5IB
0.1
1
10
0.1
1
10
100
1000
VCB[V], COLLECTOR-BASE VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 5. Turn Off Time
Figure 6. Forward Biased Safe Operating Area
100
10000
VCC=125V
IC=5IB
tSTG
10
1
1000
100
10
0.1
0.01
tF
1
10
100
1000
0.1
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
3
www.fairchildsemi.com
FJPF13007 Rev. C
Typical Performance Characteristics (Continued)
Figure 7. Reverse Biased Safe Operating Area
Figure 8. Power Derating
100
60
50
40
30
20
10
0
Vcc=50V,
I
B1=1A, IB2 = -1A
L = 1mH
10
1
0.1
0.01
10
100
1000
10000
0
25
50
75
100
125
150
175
VCE[V], COLLECTOR-EMITTER VOLTAGE
TC[oC], CASE TEMPERATURE
4
www.fairchildsemi.com
FJPF13007 Rev. C
10.36
9.96
2.66
2.42
B
A
B
3.28
3.08
7.00
3.40
3.20
0.70
SEE NOTE "F"
SEE NOTE "F"
6.88
6.48
1 X 45°
16.07
15.67
B
16.00
15.60
B
(3.23)
3
1
1.47
1.24
2.96
2.56
2.14
0.90
0.70
0.50
10.05
9.45
M
A
30°
0.45
0.25
0.60
0.45
B
2.54
2.54
4.90
4.50
B
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B
DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. OPTION 1 - WITH SUPPORT PIN HOLE.
OPTION 2 - NO SUPPORT PIN HOLE.
G. DRAWING FILE NAME: TO220M03REV5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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