FJPF5027OTU [ONSEMI]
NPN芯片晶体管;型号: | FJPF5027OTU |
厂家: | ONSEMI |
描述: | NPN芯片晶体管 局域网 开关 晶体管 |
文件: | 总6页 (文件大小:222K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FJPF5027
High Voltage and High Reliability
•
•
High Speed Switching
Wide SOA
TO-220F
1.Base 2.Collector 3.Emitter
1
NPN Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Value
Units
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
1100
V
V
CBO
CEO
EBO
800
7
V
I
I
3
10
A
C
A
CP
B
I
1.5
A
P
Collector Dissipation ( T =25°C)
40
W
°C
°C
C
C
T
T
Junction Temperature
Storage Temperature
150
J
- 55 ~ 150
STG
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage
I
I
I
= 1mA, I = 0
1100
800
7
V
V
V
V
CBO
CEO
EBO
C
C
E
E
BV
BV
= 5mA, I = 0
B
= 1mA, I = 0
C
V
(sus)
I = 1.5A, I = -I = 0.3A
800
CEX
C
B1
B2
L = 2mH, Clamped
I
I
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
V
V
= 800V, I = 0
10
10
40
µA
µA
CBO
EBO
CB
EB
E
= 5V, I = 0
C
h
h
V
V
= 5V, I = 0.2A
10
8
FE1
FE2
CE
CE
C
= 5V, I = 1A
C
V
V
(sat)
(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
I
I
= 1.5A, I = 0.3A
2
V
V
CE
C
C
B
= 1.5A, I = 0.3A
1.5
BE
B
C
V
= 10V, I = 0, f = 1MHz
60
15
pF
MHz
µs
ob
CB
E
f
t
t
t
Current Gain Bandwidth Product
Turn On Time
V
V
I
= 10V, I = 0.2A
T
CE
C
= 400V
0.5
3
ON
CC
= 5I = -2.5I = 2A
Storage Time
C
B1 B2
µs
STG
F
R = 200Ω
L
Fall Time
0.3
µs
h
Classification
FE
Classification
N
R
O
h
10 ~ 20
15 ~ 30
20 ~ 40
FE1
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
Typical Characteristics
3.0
100
10
1
VCE = 5 V
TC = 125oC
IB = 350mA
2.5
2.0
1.5
1.0
0.5
0.0
TC = 75oC
TC = - 25oC
TC = 25oC
IB = 150mA
IB = 100mA
IB = 50mA
0
1
2
3
4
5
6
7
8
0.01
0.1
1
10
IC [A], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC current Gain
100
10
10
IC = 5 IB
IC = 5 IB
TC = 125oC
TC = 75oC
TC = 25oC
TC = 25oC
TC = - 25oC
TC = 125oC
1
1
TC = - 25oC
TC = 75oC
0.1
0.01
0.1
0.1
0.1
1
10
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 3. Saturation Voltage
Figure 4. Saturation Voltage
100
10
10ms
ICMAX.(Pulse)
10
100µs
1ms
ICMAX(Continuous)
DC
1
0.1
0.01
1E-3
IB1=3A, RB2=0
L=1mH, VCC=20V
1
10
100
1000
1
10
100
1000
10000
VCE [V], COLLECTOR-EMITTER VOLTAGE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Reverse Bias Safe Operating Area
Figure 6. Forward Bias Safe Operating Area
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
Typical Characteristics (Continued)
10
70
60
50
40
30
20
10
0
1
0.1
IB1=45mA, IB2=-0.5A
VCC=125V
0.01
0.1
1
10
0
25
50
75
100
125
150
175
IC [A], COLLECTOR CURRENT
TC[oC], CASE TEMPERATURE
Figure 7. Resistive Load Switching Characteristics
Figure 8. Power Derating
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
10.36
9.96
2.66
2.42
B
A
B
3.28
3.08
7.00
3.40
3.20
0.70
SEE NOTE "F"
SEE NOTE "F"
6.88
6.48
1 X 45°
16.07
15.67
B
16.00
15.60
B
(3.23)
3
1
1.47
1.24
2.96
2.56
2.14
0.90
0.70
0.50
10.05
9.45
M
A
30°
0.45
0.25
0.60
0.45
B
2.54
2.54
4.90
4.50
B
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B
DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. OPTION 1 - WITH SUPPORT PIN HOLE.
OPTION 2 - NO SUPPORT PIN HOLE.
G. DRAWING FILE NAME: TO220M03REV5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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