FJX2222ATF [ONSEMI]
NPN外延硅晶体管;
| 型号： | FJX2222ATF |
| 厂家： | 
ONSEMI |
| 描述： | NPN外延硅晶体管 晶体管 |
| 文件： | 总7页 (文件大小：291K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
November 2014
FJX2222A
NPN Epitaxial Silicon Transistor
Features
• General-Purpose Transistor
3
• Collector-Emitter Voltage: VCEO = 40 V
2
1
SOT-323
1. Base 2. Emitter 3. Collector
Ordering Information
Part Number
Marking
Package
SC70 3L
Packing Method
FJX2222ATF
S1P
Tape and Reel
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
75
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
40
V
6
V
600
150
150
mA
°C
°C
TJ
Junction Temperature
Storage Temperature
TSTG
© 2002 Fairchild Semiconductor Corporation
FJX2222A Rev. 1.1.0
www.fairchildsemi.com
Thermal Characteristics(1)
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
Parameter
Value
325
Unit
mW
Power Dissipation
Derate Above 25°C
2.6
mW/°C
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
385
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Parameter
Conditions
Min.
75
Max.
0.01
300
Unit
V
Collector-Base Breakdown Voltage
IC = 10 μA, IE = 0
Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0
40
V
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
IE = 10 μA, IC = 0
6
V
VCB = 60 V, IE = 0
μA
VCE = 10 V, IC = 0.1 mA
VCE = 10 V, IC = 1 mA
VCE = 10 V, IC = 10 mA
VCE = 10 V, IC = 150 mA
VCE = 10 V, IC = 500 mA
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
35
50
hFE
DC Current Gain(2)
75
100
40
0.3
1.0
1.2
2.0
VCE(sat) Collector-Emitter Saturation Voltage(2)
VBE(sat) Base-Emitter Saturation Voltage(2)
V
V
0.6
IC = 20 mA, VCE = 20 V,
f = 100 MHz
fT
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
300
MHz
pF
VCB = 10 V, IE = 0,
f = 1 MHz
Cob
NF
8
4
IC = 100 μA, VCE = 10 V,
RS = 1 kΩ, f = 1 kHz
dB
ns
VCC = 30 V, IC = 150 mA,
VBE = 0.5 V, IB1 = 15 mA
tON
tOFF
Note:
Turn-On Time
35
285
VCC = 30 V, IC = 150 mA,
IB1 = IB2 = 15 mA
Turn-Off Time
ns
2. Pulse test: Pulse width ≤ 300 μs, duty cycle ≤ 2%
© 2002 Fairchild Semiconductor Corporation
FJX2222A Rev. 1.1.0
www.fairchildsemi.com
2
Typical Performance Characteristics
10000
10
VCE = 10V
IC = 10 IB
VBE(sat)
1000
100
10
1
0.1
VCE(sat)
0.01
1
10
100
1000
1
10
100
1000
IC[A], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC Current Gain
Figure 2. Collector-Base Saturation Voltage and
Base-Emitter Saturation Voltage
1000
12
10
8
IE = 0
f = 1MHz
VCE = 20V
6
100
4
2
0
10
1
10
100
1000
1
10
100
VCB [V], COLLECTOR-BASE VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 3. Output Capacitance
Figure 4. Current Gain Bandwidth Product
© 2002 Fairchild Semiconductor Corporation
FJX2222A Rev. 1.1.0
www.fairchildsemi.com
3
Physical Dimensions
Figure 7. 3-LEAD, SC70, EIAJ SC-70, 1.25 MM WIDE
© 2002 Fairchild Semiconductor Corporation
FJX2222A Rev. 1.1.0
www.fairchildsemi.com
4
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Preliminary
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First Production
Full Production
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Rev. I72
© Fairchild Semiconductor Corporation
www.fairchildsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
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