FLS6617MX [ONSEMI]

Primary-Side-Regulation PWM with POWER MOSFET;
FLS6617MX
型号: FLS6617MX
厂家: ONSEMI    ONSEMI
描述:

Primary-Side-Regulation PWM with POWER MOSFET

开关 光电二极管
文件: 总15页 (文件大小:454K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Is Now Part of  
To learn more about ON Semiconductor, please visit our website at  
www.onsemi.com  
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers  
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor  
product management systems do not have the ability to manage part nomenclature that utilizes an underscore  
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain  
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated  
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please  
email any questions regarding the system integration to Fairchild_questions@onsemi.com.  
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number  
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right  
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON  
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON  
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s  
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA  
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended  
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out  
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor  
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
May 2016  
FLS6617  
Primary-Side-Regulation PWM with POWER MOSFET  
Integrated  
Features  
Description  
This third-generation Primary Side Regulation (PSR)  
and highly integrated PWM controller provides several  
features to enhance the performance of low-power  
flyback converters. The proprietary TRUECURRENT®  
technology of FLS6617 enables precise CC regulation  
and simplified circuit design for battery-charger  
applications leading to lower-cost, smaller, and lighter  
chargers, compared to a conventional design or a linear  
transformer.  
.
.
.
.
Low Standby Power under 30 mW  
High-Voltage Startup  
Fewest External Component Counts  
Constant-Voltage (CV) and Constant-Current (CC)  
Control without Secondary-Feedback Circuitry  
.
.
Green-Mode: Linearly Decreasing PWM Frequency  
with Cycle Skipping  
To minimize standby power consumption, the  
proprietary green mode provides off-time modulation to  
linearly decrease PWM frequency under light-load  
conditions. Green mode assists the power supply in  
meeting power conservation requirements.  
Fixed PWM Frequency at 50 kHz with Proprietary  
Frequency Hopping to Solve EMI Problem  
.
.
.
.
.
.
Peak-Current-Mode Control in CV Mode  
Cycle-by-Cycle Current Limiting  
By using the FLS6617, a charger can be implemented  
with few external components and minimized cost. A  
typical output CV/CC characteristic envelope is shown  
in Figure 1.  
VDD Over-Voltage Protection with Auto Restart  
VDD Under-Voltage Lockout (UVLO)  
Gate Output Maximum Voltage Clamped at 15 V  
Fixed Over-Temperature Protection with  
Auto Restart  
VO  
.
Available in the 7-Lead SOP Package  
Applications  
±7%  
.
.
Battery chargers for cellular phones, cordless  
phones, PDA, digital cameras, power tools, etc.  
Replaces linear transformers and RCC SMPS  
IO  
Related Resources  
Figure 1. Typical Output V-I Characteristic  
.
Fairchild Power Supply WebDesigner Flyback  
Design & Simulation - In Minutes at No Expense  
Ordering Information  
Operating  
Temperature Range  
Packing  
Part Number  
Package  
Method  
FLS6617MX  
-40°C to +125°C  
7-Lead, Small Outline Package (SOP-7)  
Tape & Reel  
© 2015 Fairchild Semiconductor Corporation  
FLS6617 • Rev. 1.1  
www.fairchildsemi.com  
 
Application Diagram  
Csn2  
Rsn  
L1  
T1  
DF  
Rsn2  
Csn  
DC  
Output  
D1  
D4  
Rd  
CO1 CO2  
RF  
Rsn1  
Dsn  
AC  
Input  
C1  
C2  
DFa  
R1  
R2  
CVDD  
D2  
D3  
CVS  
VDD  
HV  
VS  
5
8
1
4
2
7
DRAIN  
CS  
NC  
3
GND  
RSENSE  
FLS6617  
Figure 2. Typical Application  
Internal Block Diagram  
Drain  
8
HV  
7
Auto  
Recovery  
OTP  
24V  
Soft  
Driver  
PWM  
S
R
Q
OSC  
VRESET  
2
VDD  
Max.  
Duty  
0.8V  
16V/5V  
Pattern  
Generator  
1
CS  
LEB  
VRESET  
Peak Detect  
Vcs,pk  
S
EA_I  
TS  
Slope  
Compensation  
Tdis  
2.5V  
4
NC  
Constant Current  
Regulation  
Vsah  
Sample and  
Hold  
EA_V  
5
VS  
Vsah= Output voltage feedback signal  
Constant Voltage  
Regulation  
2.5V  
Figure 3. Functional Block Diagram  
© 2015 Fairchild Semiconductor Corporation  
FLS6617 • Rev. 1.1  
www.fairchildsemi.com  
2
Marking Information  
F: Fairchild Logo  
Z: Plant Code  
X: 1-Digit Year Code  
Y: 1-Digit Week Code  
TT: 2-Digit Die Run Code  
T: Package Type (M=SOP)  
M: Manufacture Flow Code  
ZXYTT  
6617  
TM  
Figure 4. Top Mark  
Pin Configuration  
CS 1  
8
7
DRAIN  
HV  
VDD  
2
3
4
GND  
NC  
5
VS  
Figure 5. Pin Configuration  
Pin Definitions  
Pin #  
Name  
Description  
Current Sense. This pin connects to current-sense resistor. Detect the MOSFET current for  
peak-current-mode control in CV mode and provide the output-current regulation in CC mode.  
1
CS  
Power Supply. IC operating current and MOSFET driving current are supplied through this pin.  
This pin is connected to an external VDD capacitor of typically 10 µF. The threshold voltages for  
startup and turn-off are 16 V and 5 V, respectively. The operating current is lower than 5 mA.  
2
VDD  
Ground  
3
4
GND  
NC  
No Connection  
Voltage Sense. This pin detects the output voltage information and discharge time based on  
voltage of auxiliary winding.  
5
VS  
High Voltage. This pin connects to bulk capacitor for high-voltage startup.  
7
8
HV  
Driver Output. Power MOSFET drain. This pin is the high-voltage power MOSFET drain.  
DRAIN  
© 2015 Fairchild Semiconductor Corporation  
FLS6617 • Rev. 1.1  
www.fairchildsemi.com  
3
Absolute Maximum Ratings  
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be  
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.  
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.  
The absolute maximum ratings are stress ratings only.  
Symbol  
Parameter  
Min.  
Max.  
Units  
VHV  
VVDD  
VVS  
HV Pin Input Voltage  
DC Supply Voltage(1,2)  
VS Pin Input Voltage  
CS Pin Input Voltage  
500  
30  
6.0  
6.0  
6.0  
6.0  
700  
1
V
V
-0.3  
-0.3  
-0.3  
-0.3  
V
VCS  
V
VCOMV  
VCOMI  
VDS  
Voltage Error Amplifier Output Voltage  
Current Error Amplifier Output Voltage  
Drain-Source Voltage  
V
V
V
TA=25°C  
Continuous Drain Current  
TA=100°C  
A
ID  
0.6  
4
A
IDM  
EAS  
IAR  
Pulsed Drain Current  
A
Single Pulse Avalanche Energy  
Avalanche Current  
50  
1
mJ  
A
Power Dissipation (TA50°C)  
PD  
660  
mW  
θJA  
Thermal Resistance (Junction-to-Air)  
Thermal Resistance (Junction-to-Case)  
147  
11  
°C/W  
°C/W  
JT  
TJ  
TSTG  
TL  
Operating Junction Temperature  
-40  
-55  
+150  
+150  
+260  
°C  
°C  
°C  
Storage Temperature Range  
Lead Temperature (Wave Soldering or IR, 10 Seconds)  
Electrostatic  
Discharge Capability  
(Except HV Pin)  
Human Body Model, JEDEC-JESD22_A114  
Charged Device Model, JEDEC-JESD22_C101  
4.0  
2.0  
ESD  
kV  
Notes:  
1. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device.  
2. All voltage values, except differential voltages, are given with respect to the GND pin.  
Recommended Operating Conditions  
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended  
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not  
recommend exceeding them or designing to Absolute Maximum Ratings.  
Symbol  
Parameter  
Operating Ambient Temperature  
Min.  
Max.  
Units  
TA  
-40  
+125  
°C  
© 2015 Fairchild Semiconductor Corporation  
FLS6617 • Rev. 1.1  
www.fairchildsemi.com  
4
 
 
Electrical Characteristics  
Unless otherwise specified, VDD=15 V and TA=25°C.  
Symbol  
VDD Section  
VOP  
Parameter  
Condition  
Min. Typ. Max. Unit  
Continuously Operating Voltage  
Turn-On Threshold Voltage  
Turn-Off Threshold Voltage  
Operating Current  
23  
17  
V
V
VDD-ON  
15  
16  
5.0  
2.5  
VDD-OFF  
IDD-OP  
4.5  
5.5  
5.0  
V
mA  
IDD-GREEN Green-Mode Operating Supply Current  
0.95  
24  
1.2  
mA  
V
VDD-OVP  
VDD Over-Voltage-Protection Level (OVP)  
VDD Over-Voltage-Protection Debounce Time  
tD-VDDOVP  
90  
1
200  
350  
µs  
HV Startup Current Source Section  
VHV-MIN  
Minimum Startup Voltage on HV Pin(3)  
50  
V
VAC=90 V (VDC=100 V),  
VDD=0 V  
IHV  
Supply Current Drawn from HV Pin  
Leakage Current after Startup  
2.0  
0.5  
5.0  
mA  
HV=500 V,  
VDD=VDD-OFF+1 V  
IHV-LC  
3.0  
µA  
Oscillator Section  
Center Frequency  
44  
50  
56  
Normal Frequency 1  
>Vo*0.78  
<Vo*0.78  
Frequency Hopping  
Range  
1.6  
3.4  
36  
5.2  
fOSC  
kHz  
Center Frequency  
Normal Frequency 2  
Frequency Hopping  
Range  
2.5  
50 kHz36 kHz, Vs  
36 kHz50 kHz, Vs  
VF-JUM-53  
VF-JUM-35  
1.75 1.95 2.15  
2.05 2.25 2.45  
V
V
Frequency Jumping Point  
fOSC-N-MIN Minimum Frequency at No-Load  
fOSC-CM-MIN Minimum Frequency at CCM  
270  
395  
13  
520  
Hz  
kHz  
COMV Level for High Cycle Skipping Period  
VS-F-SKIPH  
VS-F-SKIPL  
1.14  
0.80  
V
V
Change(3)  
COMV Level for Low Cycle Skipping Period  
Change(3)  
VS-F-SKIPH<COMV<VN  
VS-F-SKIPL>COMV  
VDD=10 V, 25 V  
240  
160  
1
ms  
ms  
%
TSKIP-CV  
Cycle skipping period(3)  
fDV  
fDT  
Voltage-Sense Section  
Frequency Variation vs. VDD Deviation  
2
Frequency Variation vs. Temperature Deviation TA=-40°C to 105°C  
15  
%
Itc  
IC Bias Current  
10  
µA  
V
VBIAS-COMV Adaptive Bias Voltage Dominated by VCOMV  
RVS=20 kꢁ  
1.4  
Continued on the following page…  
© 2015 Fairchild Semiconductor Corporation  
FLS6617 • Rev. 1.1  
www.fairchildsemi.com  
5
Electrical Characteristics  
Unless otherwise specified, VDD=15 V and TA=25°C.  
Symbol  
Parameter  
Condition  
Min. Typ. Max. Unit  
Current-Sense Section  
tPD  
tMIN-N  
VTH  
Propagation Delay to GATE Output  
Minimum On Time at No-Load  
90  
850  
0.8  
200  
ns  
ns  
V
700  
1050  
Threshold Voltage for Current Limit  
Voltage Error Amplifier Section  
VVR  
VN  
Reference Voltage  
2.475 2.500 2.525  
V
V
V
fOSC=Normal  
Frequency1 - 2 kHz  
Green-Mode Starting Voltage on EA_V  
Green-Mode Ending Voltage on EA_V  
2.5  
0.5  
VG  
fOSC=1 kHz  
Current Error Amplifier Section  
VIR Reference Voltage  
Internal MOSFET Section(4)  
2.475 2.500 2.525  
V
DCYMAX  
BVDSS  
Maximum Duty Cycle  
Drain-Source Breakdown Voltage  
60  
75  
85  
%
V
ID=250 μA, VGS=0 V  
ID=250 μA,  
700  
900  
BVDSS/TJ Breakdown Voltage Temperature Coefficient Referenced to  
TA=25°C  
0.53  
13  
V/°C  
RDS(ON)  
IS  
Static Drain-Source On-Resistance  
ID=0.5 A, VGS=10 V  
16  
1
Maximum Continuous Drain-Source Diode  
Forward Current  
A
VDS=700 V, TA=25°C  
VDS=560 V, TA=100°C  
10  
100  
30  
µA  
µA  
ns  
ns  
IDSS  
Drain-Source Leakage Current  
tD-ON  
Turn-On Delay Time  
Turn-Off Delay Time  
10  
20  
VDS=350 V, ID=1 A,  
RG=25 (5)  
tD-OFF  
50  
VGS=0 V, VDS=25 V,  
fS=1 MHz  
CISS  
Input Capacitance  
Output Capacitance  
175  
23  
200  
25  
pF  
pF  
COSS  
Over-Temperature-Protection Section  
TOTP  
Threshold Temperature for OTP(6)  
Notes:  
3. Guaranteed by design.  
+140  
°C  
4. These parameters, although guaranteed, are not 100% tested in production.  
5. Pulse test: pulse width 300 µs, duty cycle 2%.  
6. When the over-temperature protection is activated, the power system enter auto-restart mode and output is  
disabled.  
© 2015 Fairchild Semiconductor Corporation  
FLS6617 • Rev. 1.1  
www.fairchildsemi.com  
6
 
 
Typical Performance Characteristics  
17  
5.5  
5.3  
5.1  
4.9  
4.7  
4.5  
16.6  
16.2  
15.8  
15.4  
15  
-40 -25 -10  
5
20  
35  
50  
65  
80  
95 110 125  
-40 -25 -10  
5
20  
35  
50  
65  
80  
95 110 125  
Temperature(oC)  
Temperature(oC)  
Figure 6. Turn-on Threshold Voltage(VDD-ON  
vs. Temperature  
)
Figure 7. Turn-off Threshold Voltage (VDD-OFF  
vs. Temperature  
)
3
2.8  
2.6  
2.4  
2.2  
2
56  
54  
52  
50  
48  
46  
44  
-40 -25 -10  
5
20  
35  
50  
65  
80  
95 110 125  
-40 -25 -10  
5
20  
35  
50  
65  
80  
95 110 125  
Temperature(oC)  
Temperature(oC)  
Figure 8. Operating Current (IDD-OP  
vs. Temperature  
)
Figure 9. Normal Frequency 1 (fOSC  
vs. Temperature  
)
2.525  
2.515  
2.505  
2.495  
2.485  
2.475  
1.1  
1.05  
1
0.95  
0.9  
0.85  
-40 -25 -10  
5
20  
35  
50  
65  
80  
95 110 125  
-40 -25 -10  
5
20  
35  
50  
65  
80  
95 110 125  
Temperature(oC)  
Temperature(oC)  
Figure 10. Reference Voltage (VVR) vs. Temperature  
Figure 11. Green Mode Operating Supply Current  
(IDD-GREEN) vs. Temperature  
© 2015 Fairchild Semiconductor Corporation  
FLS6617 • Rev. 1.1  
www.fairchildsemi.com  
7
Typical Performance Characteristics  
520  
15  
14.2  
13.4  
12.6  
11.8  
11  
470  
420  
370  
320  
270  
-40 -25 -10  
5
20  
35  
50  
65  
80  
95 110 125  
-40 -25 -10  
5
20  
35  
50  
65  
80  
95 110 125  
Temperature(oC)  
Temperature(oC)  
Figure 12. Minimum Frequency at No Load  
(fOSC-N-MIN) vs. Temperature  
Figure 13. Minimum Frequency at CCM  
(fOSC-CM-MIN) vs. Temperature  
4
1000  
950  
900  
850  
800  
750  
3.5  
3
2.5  
2
1.5  
1
-40 -25 -10  
5
20  
35  
50  
65  
80  
95 110 125  
-40 -25 -10  
5
20  
35  
50  
65  
80  
95 110 125  
Temperature(oC)  
Temperature(oC)  
Figure 14. Supply Current Drawn from HV Pin (IHV  
vs. Temperature  
)
Figure 15. Minimum On Time at No Load (tMIN-N  
vs. Temperature  
)
2.8  
2.7  
2.6  
2.5  
2.4  
2.3  
0.8  
0.75  
0.7  
0.65  
0.6  
0.55  
0.5  
-40 -25 -10  
5
20  
35  
50  
65  
80  
95 110 125  
-40 -25 -10  
5
20  
35  
50  
65  
80  
95 110 125  
Temperature(oC)  
Temperature(oC)  
Figure 16. Green Mode Starting Voltage on EA_V  
(VN) vs. Temperature  
Figure 17. Green Mode Ending Voltage on EA_V (VG)  
vs. Temperature  
© 2015 Fairchild Semiconductor Corporation  
FLS6617 • Rev. 1.1  
www.fairchildsemi.com  
8
Typical Performance Characteristics  
11  
3
2.5  
2
10.6  
10.2  
9.8  
9.4  
9
1.5  
1
0.5  
-40 -25 -10  
5
20  
35  
50  
65  
80  
95 110 125  
-40 -25 -10  
5
20  
35  
50  
65  
80  
95 110 125  
Temperature(oC)  
Temperature(oC)  
Figure 18. IC Bias Current (Itc) vs. Temperature  
Figure 19. Leakage Current after Startup (IHV-LC  
vs. Temperature  
)
85  
81  
77  
73  
69  
65  
-40 -25 -10  
5
20  
35  
50  
65  
80  
95 110 125  
Temperature(oC)  
Figure 20. Maximum Duty Cycle (DCYMAX  
vs. Temperature  
)
© 2015 Fairchild Semiconductor Corporation  
FLS6617 • Rev. 1.1  
www.fairchildsemi.com  
9
Functional Description  
Figure 21 shows the basic circuit diagram of primary-  
side regulated flyback converter, with typical waveforms  
shown in Figure 22. Generally, Discontinuous  
Conduction Mode (DCM) operation is preferred for  
primary-side regulation because it allows better output  
regulation. The operation principles of DCM flyback  
converter are as follows:  
constant current regulation mode, VCOMI determines the  
duty cycle while VCOMV is saturated to HIGH.  
ID  
IO  
Np:Ns  
D
+
+ VF  
-
+
L
Lm  
During the MOSFET on time (tON), input voltage (VDL) is  
applied across the primary-side inductor (Lm). Then  
MOSFET current (Ids) increases linearly from zero to the  
peak value (Ipk). During this time, the energy is drawn  
from the input and stored in the inductor.  
VDL  
O
VO  
-
V
A
D
AC  
-
Ids  
When the MOSFET is turned off, the energy stored in  
the inductor forces the rectifier diode (D) to be turned  
on. While the diode is conducting, the output voltage  
(Vo), together with diode forward-voltage drop (VF), is  
applied across the secondary-side inductor (LmNs2/  
EA_I  
CS  
I
Estimator  
O
RCS  
VCOMI  
Ref  
t DIS  
Detector  
PWM  
Control  
V
2
S
Np ) and the diode current (ID) decreases linearly from  
NA  
V
DD  
VCOMV  
the peak value (IpkNp/Ns) to zero. At the end of inductor  
current discharge time (tDIS), all the energy stored in the  
inductor has been delivered to the output.  
V
O
Estimator  
RS1  
RS2  
+
Vw  
-
EA_V  
Ref  
Primary-Side Regulation  
Controller  
When the diode current reaches zero, the transformer  
auxiliary winding voltage (Vw) begins to oscillate by the  
resonance between the primary-side inductor (Lm) and  
the effective capacitor loaded across the MOSFET.  
Figure 21. Simplified PSR Flyback Converter Circuit  
During the inductor current discharge time, the sum of  
output voltage and diode forward-voltage drop is  
reflected to the auxiliary winding side as (Vo+VF)   
Na/Ns. Since the diode forward-voltage drop decreases  
as current decreases, the auxiliary winding voltage  
reflects the output voltage best at the end of diode  
conduction time where the diode current diminishes to  
zero. Thus, by sampling the winding voltage at the end  
of the diode conduction time, the output voltage  
information can be obtained. The internal error amplifier  
for output voltage regulation (EA_V) compares the  
sampled voltage with internal precise reference to  
generate error voltage (VCOMV), which determines the  
duty cycle of the MOSFET in CV mode.  
Ids (MOSFET Drain-to-Source Current)  
Ipk  
ID (Diode Current)  
NP  
I
pk   
NS  
ID.avg Io  
Vw (Auxiliary Winding Voltage)  
Meanwhile, the output current can be estimated using  
the peak drain current and inductor current discharge  
time because output current is same as the average of  
the diode current in steady state.  
NA  
VF   
NS  
NA  
NS  
VO   
The output current estimator identifies the highest value  
of the drain current with a peak detection circuit and  
calculates the output current using the inductor  
discharge time (tDIS) and switching period (ts). This  
output information is compared with an internal precise  
reference to generate error voltage (VCOMI), which  
determines the duty cycle of the MOSFET in CC Mode.  
tON  
tDIS  
tS  
With  
Fairchild’s  
innovative  
TRUECURRENT®  
Figure 22. Key Waveforms of DCM Flyback  
Converter  
technique, constant current (CC) output can be  
precisely controlled.  
Among the two error voltages, VCOMV and VCOMI, the  
smaller one determines the duty cycle. Therefore, during  
constant voltage regulation mode, VCOMV determines the  
duty cycle while VCOMI is saturated to HIGH. During  
© 2015 Fairchild Semiconductor Corporation  
FLS6617 • Rev. 1.1  
www.fairchildsemi.com  
10  
 
 
Operating Current  
VDL  
+
Np  
The FLS6617 operating current is as small as 2.5 mA,  
which results in higher efficiency and reduces the VDD  
hold-up capacitance requirement. Once FLS6617 enters  
deepgreen mode, the operating current is reduced to  
0.95 mA, assisting the power supply in meeting power  
conservation requirements.  
RSTART  
CDL  
-
I
startup  
AC line  
CDD  
NA  
Green-Mode Operation  
1
2
3
4
8
7
CS  
Drain  
HV  
The FLS6617 uses voltage regulation error amplifier  
output (VCOMV) as an indicator of the output load and  
modulates the PWM frequency as shown in Figure 23.  
The switching frequency decreases with cycle skipping  
as the load decreases. In heavy load conditions, the  
switching frequency is fixed at 50 kHz. Once VCOMV  
decreases below VN, the PWM frequency linearly  
decreases with cycle skipping from 50 kHz to reduce  
switching losses.  
VDD  
GND  
NC  
RCS  
RS1  
5
VS  
Cvs  
RS2  
Figure 24. HV Startup Circuit  
Switching Frequency  
with cycle skipping  
Under-Voltage Lockout (UVLO)  
The turn-on and turn-off thresholds are fixed internally at  
16 V and 5 V, respectively. During startup, the hold-up  
capacitor must be charged to 16 V through the startup  
resistor to enable the FLS6617. The hold-up capacitor  
continues to supply VDD until power can be delivered  
from the auxiliary winding of the main transformer. VDD  
is not allowed to drop below 5 V during this startup  
process. This UVLO hysteresis window ensures that  
hold-up capacitor properly supplies VDD during startup.  
fOSC  
Green Mode  
Normal Mode  
395 Hz  
Protections  
VG  
VN  
The FLS6617 has several self-protection functions, such  
as Over-Voltage Protection (OVP), Over-Temperature  
Protection (OTP), and pulse-by-pulse current limit. All  
the protections are implemented as auto-restart mode.  
Once the abnormal condition occurs, the switching is  
terminated and the MOSFET remains off, causing VDD  
to drop. When VDD drops to the VDD turn-off voltage of  
5 V, internal startup circuit is enabled again and the  
supply current drawn from the HV pin charges the hold-  
up capacitor. When VDD reaches the turn-on voltage of  
16 V, normal operation resumes. In this manner, the  
auto-restart alternately enables and disables the  
switching of the MOSFET until the abnormal condition is  
eliminated (see Figure 25).  
VCOMV  
VS-F-SKIPL  
VS-F-SKIPH  
Figure 23. Switching Frequency in Green Mode  
Frequency Hopping  
EMI reduction is accomplished by frequency hopping,  
which spreads the energy over a wider frequency range  
than the bandwidth measured by the EMI test  
equipment. FLS6617 has  
frequency hopping circuit that changes the switching  
frequency between 44 kHz and 56 kHz.  
a
proprietary internal  
High-Voltage Startup  
Figure 24 shows the HV-startup circuit for FLS6617  
applications. The HV pin is connected to the line input or  
bulk capacitor through  
a resistor, RSTART (100 kꢁ  
recommended). During startup status, the internal  
startup circuit is enabled. Meanwhile, line input supplies  
the current, ISTARTUP, to charge the hold-up capacitor,  
CDD, through RSTART. When the VDD voltage reaches VDD-  
ON, the internal startup circuit is disabled, blocking  
ISTARTUP from flowing into the HV pin. Once the IC turns  
on, CDD is the only energy source to supply the IC  
consumption current before the PWM starts to switch.  
Thus, CDD must be large enough to prevent VDD from  
dropping down to VDD-OFF before the power can be  
delivered from the auxiliary winding.  
© 2015 Fairchild Semiconductor Corporation  
FLS6617 • Rev. 1.1  
www.fairchildsemi.com  
11  
 
 
Built-In Slope Compensation  
Error occurs  
Power  
on  
The sensed voltage across the current-sense resistor is  
used for current mode control and pulse-by-pulse  
current limiting. Built-in slope compensation improves  
stability and prevents sub-harmonic oscillations due to  
VDS  
Error removed  
peak-current mode control. The FLS6617 has  
a
synchronized, positive-slope ramp built-in at each  
switching cycle.  
VDD  
16V  
Noise Immunity  
Noise from the current sense or the control signal can  
cause significant pulse width jitter, particularly in  
continuous-conduction  
mode.  
While  
slope  
5V  
compensation helps alleviate these problems, further  
precautions should still be taken. Good placement and  
layout practices should be followed. Avoiding long PCB  
traces and component leads, locating compensation  
and filter components near the FLS6617, and increasing  
the power MOS gate resistance are advised.  
Operating Current  
2.5mA  
normal  
operation  
abnormal  
situation  
normal  
operation  
Operation Area  
Figure 25. Auto-Restart Operation  
Figure 26 shows operation area. FLS6617 has two  
switching frequency (fs) in constant current mode. In  
order to ensure IC can normally work at DCM under  
constant current mode, frequency will jump to lower  
level(36 kHz) when system is operated at low output  
voltage.  
VDD Over-Voltage Protection (OVP)  
VDD over-voltage protection prevents damage from over-  
voltage conditions. If the VDD voltage exceeds 24 V at  
open-loop feedback condition, OVP is triggered and the  
PWM switching is disabled. The OVP has a debounce  
time (typically 200 µs) to prevent false triggering due to  
switching noises.  
VOUT  
Over-Temperature Protection (OTP)  
The built-in temperature-sensing circuit shuts down  
PWM output if the junction temperature exceeds 140°C.  
CV region  
50kHz  
Pulse-by-pulse Current Limit  
CC region  
When the sensing voltage across the current-sense  
resistor exceeds the internal threshold of 0.8 V, the  
MOSFET is turned off for the remainder of switching  
cycle. In normal operation, the pulse-by-pulse current  
limit is not triggered since the peak current is limited by  
the control loop.  
36kHz  
Leading-Edge Blanking (LEB)  
IOUT  
Each time the power MOSFET switches on, a turn-on  
spike occurs at the sense resistor. To avoid premature  
termination of the switching pulse, a leading-edge  
blanking time is built in. During this blanking period,  
the current-limit comparator is disabled and cannot  
switch off the gate driver. As a result conventional RC  
filtering can be omitted.  
Figure 26. Operation Area  
Gate Output  
The FLS6617 output stage is a fast totem-pole gate  
driver. Cross conduction has been avoided to minimize  
heat dissipation, increase efficiency, and enhance  
reliability. The output driver is clamped by an internal  
15 V Zener diode to protect the power MOSFET  
transistors against undesired over-voltage gate signals.  
© 2015 Fairchild Semiconductor Corporation  
FLS6617 • Rev. 1.1  
www.fairchildsemi.com  
12  
 
5.00  
4.80  
A
3.81  
B
5
7 6  
1.75 TYP  
1.27  
3.81  
4.00  
3.80  
6.20  
5.80  
3.85 7.35  
1 2  
3
4
PIN #1  
1.27  
0.25  
0.65 TYP  
(0.33)  
M
C
B A  
TOP VIEW  
LAND PATTERN RECOMMENDATION  
B
0.25  
0.19  
C
1.75 MAX  
0.10  
C
0.51  
0.33  
OPTION A  
BEVEL EDGE  
OPTION B  
NO BEVEL EDGE  
0.25  
0.10  
FRONT VIEW  
SIDE VIEW  
NOTES:  
A. THIS PACKAGE DOES NOT FULLY CONFORM  
TO JEDEC MS-012, VARIATION AA  
B. ALL DIMENSIONS ARE IN MILLIMETERS  
C. DIMENSIONS DO NOT INCLUDE MOLD FLASH  
OR BURRS  
0.50  
0.25  
x 45  
R0.10  
R0.10  
GAGE PLANE  
0.36  
D. DRAWING FILENAME: MKT-M07Brev4  
8°  
0°  
0.900  
0.406  
SEATING PLANE  
(1.04)  
DETAIL B  
SCALE 2:1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  
literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 8002829855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81358171050  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA  
Phone: 3036752175 or 8003443860 Toll Free USA/Canada  
Fax: 3036752176 or 8003443867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
Semiconductor Components Industries, LLC  
www.onsemi.com  

相关型号:

SI9130DB

5- and 3.3-V Step-Down Synchronous Converters

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9135LG-T1

SMBus Multi-Output Power-Supply Controller

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9135LG-T1-E3

SMBus Multi-Output Power-Supply Controller

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9135_11

SMBus Multi-Output Power-Supply Controller

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9136_11

Multi-Output Power-Supply Controller

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9130CG-T1-E3

Pin-Programmable Dual Controller - Portable PCs

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9130LG-T1-E3

Pin-Programmable Dual Controller - Portable PCs

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9130_11

Pin-Programmable Dual Controller - Portable PCs

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9137

Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9137DB

Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9137LG

Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9122E

500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification Drivers

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY