FMB3904 [ONSEMI]
NPN多芯片通用放大器;
| 型号： | FMB3904 |
| 厂家： | 
ONSEMI |
| 描述： | NPN多芯片通用放大器 放大器 PC 开关 光电二极管 晶体管 |
| 文件： | 总11页 (文件大小：516K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
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or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FFB3904 / FMB3904 / MMPQ3904
NPN Multi-Chip General Purpose Amplifier
Description
This device is designed as a general-purpose amplifier
and switch. The useful dynamic range extends to 100 mA
as a switch and to 100 MHz as an amplifier. Sourced
from Process 23.
Block Diagram
E2
E2
C2
B1
E1
B2
C1
B2
C2
SC70-6
B1
pin #1
E1
Mark: .1A
C1
The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier tape
can be of either orientation (0 deg and 180 deg) and will not affect the functionality of the device.
Figure 1. FFB3904 Device Package
Figure 2. FFB3904 Internal Connection
C2
E1
C2
E1
C1
B2
E2
B1
C1
B2
E2
B1
pin #1
SuperSOT™-6
Mark: .1A
Dot denotes pin #1
Figure 3. FMB3904 Device Package
Figure 4. FMB3904 Internal Connection
B4
E4
B3
E1
B1
E2
B2
E3
B3
E4
B4
E3
B2
E2
B1
E1
C4
C4
C3
C3
C2
C2
C1
C1
SOIC-16
Mark: MMPQ3904
pin #1
C1
C1
C2
C2
C3
C3
C4
C4
Figure 5. MMPQ3904 Device Package
Figure 6. MMPQ3904 Internal Connection
© 1998 Semiconductor Components Industries, LLC.
December-2017, Rev. 3
Publication Order Number:
FFB3904/D
1
Ordering Information
Part Number
FFB3904
Top Mark
.1A
Package
SC70 6L
SSOT 6L
SOIC 16L
Packing Method
Tape and Reel
Tape and Reel
Tape and Reel
FMB3904
.1A
MMPQ3904
MMPQ3904
Absolute Maximum Ratings(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCEO
VCBO
VEBO
IC
Parameter
Value
Unit
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
40
60
V
6.0
V
Collector Current - Continuous
200
mA
°C
TJ, TSTG Operating and Storage Junction Temperature Range
-55 to +150
Note:
1. These ratings are based on a maximum junction temperature of 150°C. These are steady-state limits. ON
Semiconductor should be consulted on applications involving pulsed or low-duty cycle operations.
Thermal Characteristics(2)
Values are at TA = 25°C unless otherwise noted.
Max.
Symbol
Parameter
Total Device Dissipation
Unit
FFB3904
300
FMB3904 MMPQ3904
700
5.6
1,000
8.0
mW
PD
Derate above 25°C
2.4
mW/°C
Thermal Resistance, Junction to Ambient
415
180
Thermal Resistance, Junction to Ambient,
Effective 4 Die
125
240
RθJA
°C/W
Thermal Resistance, Junction to Ambient,
Each Die
Note:
2. PCB size: FR-4 76 x 114 x 0.6T mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
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2
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0
40
60
V
V
V(BR)CBO Collector-Base Breakdown Voltage
V(BR)EBO Emitter-Base Breakdown Voltage
IC = 10 μA, IE = 0
IE = 10 μA, IC = 0
6.0
V
IBL
Base Cut-Off Current
VCE = 30 V, VBE = -3 V
VCE = 30 V, VBE = -3 V
50
50
nA
nA
ICEX
Collector Cut-Off Current
On Characteristics(3)
FFB3904, FMB3904
MMPQ3904
40
30
70
50
100
75
60
30
IC = 0.1 mA, VCE = 1.0 V
IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
FFB3904, FMB3904
MMPQ3904
hFE
DC Current Gain
FFB3904, FMB3904
MMPQ3904
300
All Devices
IC = 50 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
All Devices
0.2
0.3
VCE(sat) Collector-Emitter Saturation Voltage
V
V
0.65
0.85
0.95
VBE(sat) Base-Emitter Saturation Voltage
Small-Signal Characteristics (MMPQ3904 only)
IC = 10 mA, VCE = 20 V,
f = 100 MHz
fT
Current Gain-Bandwidth Product
Output Capacitance
250
4.0
8.0
MHz
pF
VCB = 5.0 V, IE = 0,
f = 140 kHz
Cob
Cib
VBE = 0.5 V, IC = 0,
f = 140 kHz
Input Capacitance
pF
Note:
3. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
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3
Typical Performance Characteristics
500
V CE = 5V
0.15
0.1
β = 10
400
125 °C
125 °C
300
25 °C
200
25 °C
0.05
- 40 °C
100
- 40 °C
0
0.1
1
10
100
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Figure 7. Typical Pulsed Current Gain vs.
Collector Current
Figure 8. Collector-Emitter Saturation Voltage vs.
Collector Current
1
V
= 5V
1
0.8
0.6
0.4
β = 10
CE
0.8
0.6
0.4
0.2
- 40 °C
- 40 °C
25 °C
25 °C
125 °C
125 °C
0.1
1
10
100
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Figure 9. Base-Emitter Saturation Voltage vs.
Collector Current
Figure 10. Base-Emitter On Voltage vs.
Collector Current
10
500
f = 1.0 MHz
VCB= 30V
100
10
1
5
4
C
ib
3
2
0.1
C
ob
1
25
50
75
100
125
150
0.1
1
10
100
°
TA - AMBIENT TEMPERATURE ( C)
REVERSE BIAS VOLTAGE (V)
Figure 11. Collector Cut-Off Current vs.
Ambient Temperature
Figure 12. Capacitance vs. Reverse Bias Voltage
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4
Typical Performance Characteristics (Continued)
12
10
8
12
I
= 1.0 mA
C
R
I
= 1.0 mA
C
V CE = 5.0V
= 200Ω
S
10
8
I
= 5.0 mA
I
R
= 50 μA
= 1.0 kΩ
C
C
S
I
= 50 μA
C
I
= 0.5 mA
C
R
6
6
= 200Ω
S
I
= 100 μA
C
4
4
2
2
I
= 100 μA, R = 500 Ω
C
S
0
0
0.1
1
10
100
0.1
1
10
100
R
S
- SOURCE RESISTANCE (
)
k
Ω
f - FREQUENCY (kHz)
Figure 13. Noise Figure vs. Frequency
Figure 14. Noise Figure vs. Source Resistance
1
50
45
40
35
30
25
20
15
10
5
0
20
40
60
80
100
120
140
160
180
SOIC-16
h fe
SOT-6
0.75
θ
0.5
SC70-6
0.25
VCE = 40V
I C = 10 mA
0
0
1
10
100
1000
0
25
50
75
100
°
125
150
f - FREQUENCY (MHz)
TEMPERATURE ( C)
Figure 15. Current Gain and Phase Angle vs.
Frequency
Figure 16. Power Dissipation vs.
Ambient Temperature
500
500
100
I
10
I
c
c
IB1= IB2
=
VCC = 40V
IB1= IB2
=
10
40V
15V
100
T
= 25°C
J
t
@ VCC = 3.0V
r
T
= 125°C
J
2.0V
t
10
5
10
5
@ VCB = 0V
d
1
10
- COLLECTOR CURRENT (mA)
100
1
10
- COLLECTOR CURRENT (mA)
100
I
C
I
C
Figure 17. Turn-On Time vs. Collector Current
Figure 18. Rise Time vs. Collector Current
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5
Typical Performance Characteristics (Continued)
500
500
100
I
c
I
c
IB1= IB2
=
10
IB1= IB2
=
10
T
= 25°C
J
T
= 125°C
VCC = 40V
J
100
T
= 125°C
J
T
= 25°C
J
10
5
10
5
1
10
- COLLECTOR CURRENT (mA)
100
1
10
- COLLECTOR CURRENT (mA)
100
I
C
I
C
Figure 19. Storage Time vs. Collector Current
Figure 20. Fall Time vs. Collector Current
500
100
V
= 10 V
V
= 10 V
CE
CE
f = 1.0 kHz
f = 1.0 kHz
= 25oC
T
= 25oC
T
A
A
100
10
1
0.1
10
0.1
1
10
1
10
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Figure 21. Current Gain
Figure 22. Output Admittance
100
10
1
10
7
V
= 10 V
V
= 10 V
CE
CE
f = 1.0 kHz
f = 1.0 kHz
= 25oC
T
= 25oC
T
A
A
5
4
3
2
0.1
1
0.1
1
10
0.1
1
10
IC - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Figure 23. Input Impedance
Figure 24. Voltage Feedback Ratio
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6
Physical Dimensions
SC70 6L
SYMM
C
L
0.20
A
2.00
0.65
0.50 MIN
6
4
3
B
PIN ONE
0.10
1.25
1.90
1
0.30
0.15
(0.25)
0.40 MIN
0.10
A B
1.30
0.65
1.30
LAND PATTERN RECOMMENDATION
SEE DETAIL A
1.00
0.80
1.10
0.80
0.10 C
0.10
0.00
C
2.10 0.30
SEATING
PLANE
NOTES: UNLESS OTHERWISE SPECIFIED
GAGE
A) THIS PACKAGE CONFORMS TO EIAJ
SC-88, 1996.
PLANE
(R0.10)
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH.
0.25
0.10
D) DRAWING FILENAME: MKT-MAA06AREV6
0.20
30°
0°
0.46
0.26
SCALE: 60X
Figure 25. 6-LEAD, SC70, EIAJ SC-88, 1.25 MM WIDE (ACTIVE)
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7
Physical Dimensions (Continued)
SSOT 6L
Figure 26. 6-LEAD, SUPERSOT-6, JEDEC MO-193, 1.6 MM WIDE (ACTIVE)
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8
Physical Dimensions (Continued)
SO 16L NB
10.00
9.80
A
8.89
16
9
B
1.75
4.00
3.80
6.00
5.6
1
8
PIN ONE
INDICATOR
0.51
0.35
1.27
(0.30)
1.27
0.65
M
0.25
C B A
LAND PATTERN RECOMMENDATION
1.75 MAX
SEE DETAIL A
1.50
1.25
0.25
0.19
0.25
0.10
C
0.10
C
0.50
0.25
X 45°
NOTES: UNLESS OTHERWISE SPECIFIED
(R0.10)
(R0.10)
A) THIS PACKAGE CONFORMS TO JEDEC
MS-012, VARIATION AC, ISSUE C.
GAGE PLANE
0.36
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD
FLASH AND TIE BAR PROTRUSIONS
8°
0°
D) CONFORMS TO ASME Y14.5M-1994
E) LANDPATTERN STANDARD: SOIC127P600X175-16AM
F) DRAWING FILE NAME: M16AREV12.
SEATING PLANE
0.90
0.50
(1.04)
DETAIL A
SCALE: 2:1
Figure 27. 16-LEAD, SOIC, JEDEC MS-012, 0.150 inch, NARROW BODY (ACTIVE)
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9
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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