FMBM5401 [ONSEMI]
PNP通用放大器;
| 型号： | FMBM5401 |
| 厂家： | 
ONSEMI |
| 描述： | PNP通用放大器 放大器 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：303K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FMBM5401
PNP General-Purpose Amplifier
C2
Description
E1
C1
This device has matched dies in SuperSOT-6.
B2
E2
B1
pin #1
SuperSOTTM-6
Mark: .4S2
Ordering Information
Part Number
Marking
Package
Packing Method
Tape and Reel
FMBM5401
4S2
SSOT 6L
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCEO
VCBO
VEBO
IC
Parameter
Value
-150
Unit
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
-160
V
-5.0
V
Collector Current - Continuous
-600
mA
°C
TJ, TSTG Operating and Storage Junction Temperature Range
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
-55 to +150
2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low-
duty-cycle operations.
Thermal Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
Parameter
Value
700
Unit
mW
Total Power Dissipation
Thermal Resistance, Junction-to-Ambient, Total
RθJA
180
°C/W
Note:
3. Device mounted on a 1 in 2 pad of 2 oz copper.
Publication Order Number:
FMBM5401/D
© 2005 Semiconductor Components Industries, LLC.
October-2017,Rev. 2
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
-150
-160
-5.0
Max.
Unit
V
BVCEO Collector-Emitter Breakdown Voltage(4) IC = -1.0 mA, IB = 0
BVCBO Collector-Base Breakdown Voltage
BVEBO Emitter-Base Breakdown Voltage
IC = -100 μA, IE = 0
IE = -10 μA, IC = 0
V
V
V
CB = -120 V, IE = 0
-50
-50
-50
nA
μA
nA
ICBO
Collector Cut-Off Current
VCB = -120 V, IE = 0, TA = 100°C
VEB = -3.0 V, IC = 0
IEBO
hFE1
Emitter Cut-Off Current
DC Current Gain(4)
VCE = -5 V, IC = -1 mA
50
0.9
60
Variation Ratio of hFE1
Between Die 1 and Die 2
DC Current Gain(4)
DIVID1
hFE2
hFE1(Die1) / hFE1(Die2)
VCE = -5 V, IC = -10 mA
1.1
240
1.05
Variation Ratio of hFE2
Between Die 1 and Die 2
DC Current Gain(4)
DIVID2
hFE3
h
FE2(Die1) / hFE2(Die2)
VCE = -5 V, IC = -50 mA
FE3(Die1) / hFE3(Die2)
0.95
50
Variation Ratio of hFE3
Between Die 1 and Die 2
DIVID3
h
0.9
1.1
IC = -10 mA, IB = -1 mA
IC = -50 mA, IB = -5 mA
IC = -10 mA, IB = -1 mA
IC = -50 mA, IB = -5 mA
VCE = -5 V, IC = -10 mA
-0.2
-0.5
-1
VCE(sat) Collector-Emitter Saturation Voltage(4)
V
V
VBE(sat) Base-Emitter Saturation Voltage(4)
VBE(on) Base-Emitter On Voltage(4)
-1
-1
V
Difference of VBE(on)
DEL
VBE(on)(Die1) - VBE(on)(Die2)
-8
8
mV
Between Die1 and Die 2
VCE = -10 V, IC = -10 mA,
f = 100 MHz
fT
Current Gain Bandwidth Product
Output Capacitance
100
300
6.0
MHz
pF
Cob
VCB = -10 V, IE = 0, f = 1 MHz
VCE = -5.0 V, IC = -250 μA,
RS = 1.0 kΩ,
f = 10 Hz to 15.7 kHz
NF
Noise Figure
8.0
dB
Note:
4. Pulse test: Pulse width ≤ 300 ms, duty cycle ≤ 2%
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2
Typical Performance Characteristics
0.4
0.3
0.2
0.1
0.0
200
β = 10
VCE = 5V
150
125 o
C
100
50
0
25 o
C
25 o
C
125 o
C
- 40 o
C
- 40 o
C
0.1
1
10
100
1E-4
1E-3
0.01
0.1
1
IC - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (A)
Figure 1. Typical Pulsed Current Gain
vs. Collector Current
Figure 2. Collector-Emitter Saturation Voltage
vs. Collector Current
1.0
1.0
0.8
0.6
0.4
0.2
- 40 o
C
- 40 o
C
0.8
0.6
0.4
0.2
25 o
C
25 o
C
125 o
C
125 o
C
VCE = 5V
β = 10
0.1
1
10
100
0.1
1
10
100
IC - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
Figure 3. Base-Emitter Saturation Voltage
vs. Collector Current
Figure 4. Base-Emitter On Voltage
vs.Collector Current
100
220
V
= 100V
CB
10
1
210
200
190
180
170
0.1
25
50
75
100
125
150
0.1
1
10
100
1000
T A - AM BIENT TE MPE RATU RE ( C)
°
Ω
RESISTANCE (k )
Figure 5. Collector Cut-Off Current
vs. Ambient Temperature
Figure 6. Collector-Emitter Breakdown Voltage with
Resistance Between Emitter-Base
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3
Typical Performance Characteristics (Continued)
80
f = 1.0 MHz
60
40
C
eb
20
0
C
cb
0.1
1
10
100
V
- REVERSE BIAS VOLTAGE(V)
R
Figure 7. Input and Output Capacitance
vs. Reverse Voltage
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4
Physical Dimensions
Figure 8. 6-LEAD, SUPERSOT6, JEDEC MO-193, 1.6MM WIDE
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5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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