FNA27560 [ONSEMI]

600 V Motion SPM® 2 系列;


型号：	FNA27560
厂家：	ONSEMI
描述：	600 V Motion SPM® 2 系列电动机控制
文件：	总17页 (文件大小：1018K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Is Now Part of

To learn more about ON Semiconductor, please visit our website at

www.onsemi.com

Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers

will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor

product management systems do not have the ability to manage part nomenclature that utilizes an underscore

(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain

device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated

device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please

email any questions regarding the system integration to Fairchild_questions@onsemi.com.

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number

of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right

to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and speciﬁcally disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON

Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON

Semiconductor data sheets and/or speciﬁcations can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s

technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA

Class 3 medical devices or medical devices with a same or similar classiﬁcation in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended

or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its ofﬁcers, employees, subsidiaries, afﬁliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out

of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor

is an Equal Opportunity/Afﬁrmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

March 2016

FNA27560

600 V Motion SPM 2 Series

Features

• UL Certified No. E209204 (UL1557)

General Description

The FNA27560 is a Motion SPM^®2 module providing a

fully-featured, high-performance inverter output stage for

AC induction, BLDC, and PMSM motors. These modules

integrate optimized gate drive of the built-in IGBTs to

minimize EMI and losses, while also providing multiple

on-module protection features: under-voltage lockouts,

over-current shutdown, temperature sensing, and fault

reporting. The built-in, high-speed HVIC requires only a

single supply voltage and translates the incoming logic-

level gate inputs to high-voltage, high-current drive

signals to properly drive the module's internal IGBTs.

Separate negative IGBT terminals are available for each

phase to support the widest variety of control algorithms.

• 600 V - 75 A 3-Phase IGBT Inverter, Including Control

ICs for Gate Drive and Protections

• Low-Loss, Short-Circuit-Rated IGBTs

• Very Low Thermal Resistance Using Al₂O₃DBC

Substrate

• Built-In Bootstrap Diodes and Dedicated Vs Pins

Simplify PCB Layout

• Separate Open-Emitter Pins from Low-Side IGBTs for

Three-Phase Current Sensing

• Single-Grounded Power Supply Supported

• Built-In NTC Thermistor for Temperature Monitoring

and Management

• Adjustable Over-Current Protection via Integrated

Sense-IGBTs

• Isolation Rating of 2500 Vrms / 1 min.

Applications

• Motion Control - Industrial Motor (AC 200 V Class)

Related Resources

• AN-9121 - Users Guide for 600V SPM^®2 Series

• AN-9076 - Mounting Guide for New SPM^®2 Package

• AN-9079 - Thermal Performance of Motion SPM^®

Series by Mounting Torque

Figure 1. 3D Package Drawing

(Click to Activate 3D Content)

Package Marking and Ordering Information

Device

Device Marking

Package

Packing Type

Quantity

FNA27560

SPMCA-A34

Rail

FNA27560 Rev. 1.0

www.fairchildsemi.com

Intergrated Power Functions

•

600 V - 75 A IGBT inverter for three-phase DC / AC power conversion (refer to Figure 3)

Intergrated Drive, Protection, and System Control Functions

•

For inverter high-side IGBTs: gate-drive circuit, high-voltage isolated high-speed level-shifting control circuit,

Under-Voltage Lock-Out Protection (UVLO),

Available bootstrap circuit example is given in Figures 5 and 15.

•

For inverter low-side IGBTs: gate-drive circuit, Short-Circuit Protection (SCP) control circuit,

Under-Voltage Lock-Out Protection (UVLO)

•

Fault signaling: corresponding to UV (low-side supply) and SC faults

Input interface: active-HIGH interface, works with 3.3 / 5 V logic, Schmitt-trigger input

Pin Configuration

(34) V_S(W)

(33) V_B(W)

(32) V_BD(W)

(31) V_CC(WH)

(30) IN_(WH)

(1) P

(29) V_S(V)

(28) V_B(V)

(2) W

(3) V

(4) U

(27) V_BD(V)

(26) V_CC(VH)

(25) IN_(VH)

(24) V_S(U)

(23) V_B(U)

Case Temperature (T_C)

Detecting Point

(22) V_BD(U)

(21) V_CC(UH)

(20) COM_(H)

(19) IN_(UH)

(18) R_SC

(17) C_SC

(5) N_W

(6) N_V

(7) N_U

(16) C_FOD

(15) V_FO

(14) IN_(WL)

(13) IN_(VL)

(12) IN_(UL)

(11) COM_(L)

(10) VCC_(L)

(8) R_TH

(9) V_TH

Figure 2. Top View

FNA27560 Rev. 1.0

www.fairchildsemi.com

Pin Descriptions

Pin Number

Pin Name

Pin Description

Positive DC-Link Input

Output for W Phase

Output for V Phase

Output for U Phase

N_W

Negative DC-Link Input for W Phase

Negative DC-Link Input for V Phase

Negative DC-Link Input for U Phase

N_V

N_U

R_TH

Series Resistor for Thermistor (Temperature Detection)

Thermistor Bias Voltage

V_TH

V_CC(L)

COM_(L)

IN_(UL)

IN_(VL)

IN_(WL)

V_FO

Low-Side Bias Voltage for IC and IGBTs Driving

Low-Side Common Supply Ground

Signal Input for Low-Side U Phase

Signal Input for Low-Side V Phase

Signal Input for Low-Side W Phase

Fault Output

C_FOD

C_SC

Capacitor for Fault Output Duration Selection

Capacitor (Low-Pass Filter) for Short-Circuit Current Detection Input

Resistor for Short-Circuit Current Detection

Signal Input for High-Side U Phase

R_SC

IN_(UH)

COM_(H)

V_CC(UH)

V_BD(U)

V_B(U)

V_S(U)

IN_(VH)

V_CC(VH)

V_BD(V)

V_B(V)

V_S(V)

IN_(WH)

V_CC(WH)

V_BD(W)

V_B(W)

V_S(W)

High-Side Common Supply Ground

High-Side Bias Voltage for U Phase IC

Anode of Bootstrap Diode for U Phase High-Side Bootstrap Circuit

High-Side Bias Voltage for U Phase IGBT Driving

High-Side Bias Voltage Ground for U Phase IGBT Driving

Signal Input for High-Side V Phase

High-Side Bias Voltage for V Phase IC

Anode of Bootstrap Diode for V Phase High-Side Bootstrap Circuit

High-Side Bias Voltage for V Phase IGBT Driving

High-Side Bias Voltage Ground for V Phase IGBT Driving

Signal Input for High-Side W Phase

High-Side Bias Voltage for W Phase IC

Anode of Bootstrap Diode for W Phase High-Side Bootstrap Circuit

High-Side Bias Voltage for W Phase IGBT Driving

High-Side Bias Voltage Ground for W Phase IGBT Driving

FNA27560 Rev. 1.0

www.fairchildsemi.com

Internal Equivalent Circuit and Input/Output Pins

Figure 3. Internal Block Diagram

Notes:

1. Inverter high-side is composed of three normal-IGBTs, freewheeling diodes, and one control IC for each IGBT.

2. Inverter low-side is composed of three sense-IGBTs, freewheeling diodes, and one control IC for each IGBT. It has gate drive and protection functions.

3. Inverter power side is composed of four inverter DC-link input terminals and three inverter output terminals.

FNA27560 Rev. 1.0

www.fairchildsemi.com

Absolute Maximum Ratings (T_J= 25°C, unless otherwise specified.)

Inverter Part

Symbol

V_PN

Parameter

Conditions

Applied between P - N_U, N_V, N_W

Rating

450

Unit

Supply Voltage

V_PN(Surge)

V_CES

Supply Voltage (Surge)

500

Collector - Emitter Voltage

Each IGBT Collector Current

Each IGBT Collector Current (Peak)

600

± I_C

T_C= 25°C, T_J150°C (Note 4)

± I_CP

T_C= 25°C, T_J 150°C, Under 1 ms Pulse

150

Width (Note 4)

P_C

T_J

Collector Dissipation

T_C= 25°C per One Chip (Note 4)

227

Operating Junction Temperature

-40 ~ 150

°C

Control Part

Symbol

V_CC

Parameter

Control Supply Voltage

Conditions

Rating

Unit

Applied between V_CC(H), V_CC(L)- COM

V_BS

High-Side Control Bias Voltage

Applied between V_B(U)- V_S(U), V_B(V)- V_S(V)

V_B(W)- V_S(W)

V_IN

Input Signal Voltage

Applied between IN_(UH)

IN_(VH)

IN_(WH)

-0.3 ~ V_CC+0.3

IN_(UL), IN_(VL), IN_(WL)- COM

Applied between V_FO- COM

Sink Current at V_FOpin

V_FO

I_FO

Fault Output Supply Voltage

Fault Output Current

-0.3 ~ V_CC+0.3

V_SC

Current Sensing Input Voltage

Applied between C_SC- COM

-0.3 ~ V_CC+0.3

Bootstrap Diode Part

Symbol

Parameter

Conditions

Rating

600

Unit

V_RRM

I_F

Maximum Repetitive Reverse Voltage

Forward Current

T_C= 25°C, T_J150°C (Note 4)

1.0

I_FP

Forward Current (Peak)

T_C= 25°C, T_J 150°C, Under 1 ms Pulse

2.0

Width (Note 4)

T_J

Operating Junction Temperature

-40 ~ 150

°C

Total System

Symbol

Parameter

Conditions

Rating

Unit

V_PN(PROT)Self-Protection Supply Voltage Limit

(Short-Circuit Protection Capability)

V_CC= V_BS= 13.5 ~ 16.5 V, T_J= 150°C,

V_CES< 600 V, Non-Repetitive, < 2 s

400

T_C

Module Case Operation Temperature

Storage Temperature

See Figure 2

-40 ~ 125

2500

°C

T_STG

V_ISO

Isolation Voltage

60 Hz, Sinusoidal, AC 1 Minute, Connection

Pins to Heat Sink Plate

V_rms

Thermal Resistance

Symbol

Parameter

Conditions

Min. Typ. Max. Unit

R_th(j-c)Q

R_th(j-c)F

Junction-to-Case Thermal Resistance

(Note 5)

Inverter IGBT Part (per 1 / 6 Module)

Inverter FWD Part (per 1 / 6 Module)

0.55

1.00

°C / W

Notes:

4. These values had been made an acquisition by the calculation considered to design factor.

5. For the measurement point of case temperature (T ), please refer to Figure 2.

FNA27560 Rev. 1.0

www.fairchildsemi.com

Electrical Characteristics (T_J= 25°C, unless otherwise specified.)

Inverter Part

Symbol

Parameter

Conditions

Min. Typ. Max. Unit

V_CE(SAT)

Collector - Emitter Saturation V_CC= V_BS= 15 V

I_C= 50 A, T_J= 25°C

1.30

1.90

Voltage

V_IN= 5 V

V_F

FWDi Forward Voltage

Switching Times

V_IN= 0 V

I_F= 50 A, T_J= 25°C

1.25

1.40

0.30

1.30

0.20

0.25

1.30

0.45

1.35

0.30

0.20

1.85

2.00

0.75

1.90

0.65

s

t_ON

t_C(ON)

t_OFF

t_C(OFF)

t_rr

V_PN= 300 V, V_CC= 15 V, I_C= 75 A

T_J= 25°C

V_IN= 0 V  5 V, Inductive Load

See Figure 5

0.80

(Note 6)

t_ON

V_PN= 300 V, V_CC= 15 V, I_C= 75 A

T_J= 25°C

0.70

1.90

0.90

1.95

0.75

t_C(ON)

t_OFF

t_C(OFF)

t_rr

_IN= 0 V  5 V, Inductive Load

See Figure 5

(Note 6)

I_CES

Collector - Emitter Leakage V_CE= V_CES

Current

Note:

and t

include the propagation delay of the internal drive IC. t

and t

are the switching times of IGBT under the given gate-driving condition internally. For the

C(OFF)

OFF

C(ON)

detailed information, please see Figure 4.

100% I_C100% I_C

t_rr

V_CE

I_C

V_CE

V_IN

t_ON

t_OFF

t_C(ON)

t_C(OFF)

10% I_C

V_IN(ON)

V_IN(OFF)

10% V_CE

10% I_C

90% I_C10% V_CE

(b) turn-off

(a) turn-on

Figure 4. Switching Time Definition

FNA27560 Rev. 1.0

www.fairchildsemi.com

One-Leg Diagram of SPM 2

I_C

R_BS

C_BS

V_CC

V_B

OUT

V_S

COM

LS Switching

V_PN

HS Switching

U,V,W

Inductor

300V

LSSwitching

V_CC

V_FO

V_IN

HS Switching

OUT

5 V

0 V

FOD

V_CC

4.7kΩ

COM

N_U,V,W

15 V

R_SC

5 V

Figure 5. Example Circuit for Switching Test

Figure 6. Switching Loss Characteristics (Typical)

R-T Curve

600

550

500

450

400

350

300

250

200

150

100

R-T Curve in 50℃ ~ 125℃

100

110

120

Temperature [℃]

-20 -10

90 100 110 120

Temperature T_TH[℃]

Figure 7. R-T Curve of Built-in Thermistor

FNA27560 Rev. 1.0

www.fairchildsemi.com

Bootstrap Diode Part

Symbol

Parameter

Conditions

Min. Typ. Max. Unit

V_F

t_rr

Forward Voltage

I_F= 1.0 A, T_J= 25°C

2.2

Reverse-Recovery Time

I_F= 1.0 A, dI_F/ dt = 50 A / s, T_J= 25°C

Control Part

Symbol

Parameter

Conditions

Min. Typ. Max. Unit

I_QCCH

V_CC(UH,VH,WH)= 15 V,

_CC(UH)- COM_(H)

0.15

Quiescent V_CCSupply IN_(UH,VH,WH)= 0 V

Current

V_CC(VH)- COM_(H)

V_CC(WH)- COM_(H)

I_QCCL

I_PCCH

V_CC(L)= 15 V, IN_{(UL,VL, WL)}= 0 V

V_CC(L)- COM_(L)

5.00

0.30

V_CC(UH,VH,WH)= 15 V, f_PWM= 20 V_CC(UH)- COM_(H)

kHz, Duty = 50%, Applied to one V_CC(VH)- COM_(H)

Operating V_CCSupply PWM Signal Input for High-Side

Current

V_CC(WH)- COM_(H)

I_PCCL

I_QBS

I_PBS

V_CC(L)= 15V, f_PWM= 20 kHz, Duty = V_CC(L)- COM_(L)

50%, Applied to one PWM Signal

Input for Low-Side

9.00

0.30

6.50

Quiescent V_BSSupply V_BS= 15 V, IN_{(UH, VH, WH)}= 0 V

Current

V_B(U)- V_S(U)

V_B(V)- V_S(V)

V_B(W)- V_S(W)

Operating V_BSSupply V_CC= V_BS= 15 V, f_PWM= 20 kHz,

V_B(U)- V_S(U),

Current

Duty = 50%, Applied to one PWM V_B(V)- V_S(V)

Signal Input for High-Side V_B(W)- V_S(W)

V_FOH

V_FOL

I_SEN

Fault Output Voltage

V_CC= 15 V, V_SC= 0 V, V_FOCircuit: 4.7 k to 5 V Pull-up

V_CC= 15 V, V_SC= 1 V, V_FOCircuit: 4.7 k to 5 V Pull-up

4.5

0.5

Sensing Current of V_CC= 15 V, V_IN= 5 V, R_SC= 0  No I_C= 75 A

Each Sense IGBT

Connection of Shunt Resistor at

N_U,V,WTerminal

V_SC(ref)Short Circuit Trip Level V_CC= 15 V (Note 7)

I_SCShort Circuit Current R_SC= 11  (± 1%) No Connection of Shunt Resistor at

Level for Trip N_U,V,WTerminal (Note 7)

C_SC- COM_(L)

0.43

0.50

150

0.57

UV_CCDSupply Circuit Under- Detection Level

Voltage Protection

10.3

10.8

9.5

10.0

1.7

12.8

UV_CCR

UV_BSD

UV_BSR

t_FOD

Reset Level

Detection Level

13.3

12.0

Reset Level

12.5

Fault-Out Pulse Width C_FOD= Open

C_FOD= 2.2 nF

(Note 8)

s

V_IN(ON)ON Threshold Voltage Applied between IN_{(UH, VH, WH)}- COM_(H), IN_{(UL, VL, WL)}

2.6

COM_(L)

V_IN(OFF)OFF Threshold Voltage

0.8

R_TH

Resistance of

Thermistor

at T_TH= 25°C

at T_TH= 100°C

See Figure 7

(Note 9)

2.9

k

Notes:

7. Short-circuit current protection functions only at the low-sides because the sense current is divided from main current at low-side IGBTs. Inserting the shunt resistor for

monitoring the phase current at N , N , N terminal, the trip level of the short-circuit current is changed.

8. The fault-out pulse width t

depends on the capacitance value of C

according to the following approximate equation : t

= 0.8 x 10 x C

[s].

FOD

9. T is the temperature of thermistor itself. To know case temperature (T ), conduct experiments considering the application.

FNA27560 Rev. 1.0

www.fairchildsemi.com

Recommended Operating Conditions

Value

Symbol

Parameter

Conditions

Unit

Min. Typ. Max.

V_PN

V_CC

Supply Voltage

Applied between P - N_U, N_V, N_W

300

400

Control Supply Voltage

Applied between V_{CC(UH, VH, WH)}- COM_(H), V_CC(L)

COM_(L)

14.5

15.0

16.5

V_BS

High-Side Bias Voltage

Applied between V_B(U)- V_S(U), V_B(V)- V_S(V), V_B(W)

V_S(W)

13.5

-1

15.0

18.5

V / s

s

dV_CC/ dt, Control Supply Variation

dV_BS/ dt

t_dead

Blanking Time for

Preventing Arm - Short

For Each Input Signal

2.0

f_PWM

V_SEN

PWM Input Signal

-40C T_C125°C, -40C T_J150°C

kHz

Voltage for Current

Sensing

Applied between N_U, N_V, N_W- COM_{(H, L)}

(Including Surge Voltage)

-5

PW_IN(ON)Minimum Input Pulse

V_CC= V_BS= 15 V, I_C 150 A, Wiring Inductance

between N_{U, V, W}and DC Link N < 10nH (Note 10)

3.0

-40

s

C

Width

PW_IN(OFF)

T_J

Junction Temperature

150

Note:

10. This product might not make right output response if input pulse width is less than the recommanded value.

Figure 8. Allowable Maximum Output Current

Note:

11. This allowable output current value is the reference data for the safe operation of this product. This may be different from the actual application and operating condition.

FNA27560 Rev. 1.0

www.fairchildsemi.com

Mechanical Characteristics and Ratings

Parameter

Conditions

Min.

Typ.

Max.

Unit

m

Device Flatness

See Figure 9

1.0

10.1

+200

Mounting Torque

Mounting Screw: M4

See Figure 10

Load 19.6 N

Recommended 1.0 N • m

0.9

9.1

1.5

N • m

kg • cm

Recommended 10.1 kg • cm

15.1

Terminal Pulling Strength

Terminal Bending Strength Load 9.8 N, 90 degrees Bend

Weight

times

(＋)

Figure 9. Flatness Measurement Position

Pre - Screwing : 1

Final Screwing : 2

Figure 10. Mounting Screws Torque Order

Notes:

12. Do not over torque when mounting screws. Too much mounting torque may cause DBC cracks, as well as bolts and Al heat-sink destruction.

13. Avoid one-sided tightening stress. Figure 10 shows the recommended torque order for the mounting screws. Uneven mounting can cause the DBC substrate of package to be

damaged. The pre-screwing torque is set to 20 ~ 30% of maximum torque rating.

FNA27560 Rev. 1.0

www.fairchildsemi.com

Time Charts of SPMs Protective Function

Input Signal

Protection

RESET

SET

RESET

Circuit State

UV_CCR

Control

Supply Voltage

UV_CCD

Output Current

Fault Output Signal

Figure 11. Under-Voltage Protection (Low-Side)

a1 : Control supply voltage rises: after the voltage rises UV_CCR, the circuits start to operate when the next input is applied.

a2 : Normal operation: IGBT ON and carrying current.

a3 : Under-voltage detection (UV_CCD).

a4 : IGBT OFF in spite of control input condition.

a5 : Fault output operation starts with a fixed pulse width according to the condition of the external capacitor C_FOD

a6 : Under-voltage reset (UV_CCR).

a7 : Normal operation: IGBT ON and carrying current by triggering next signal from LOW to HIGH.

Input Signal

Protection

RESET

SET

RESET

Circuit State

UV_BSR

Control

Supply Voltage

UV_BSD

Output Current

High-level (no fault output)

Fault Output Signal

Figure 12. Under-Voltage Protection (High-Side)

b1 : Control supply voltage rises: after the voltage reaches UV_BSR, the circuits start to operate when the next input is applied.

b2 : Normal operation: IGBT ON and carrying current.

b3 : Under-voltage detection (UV_BSD).

b4 : IGBT OFF in spite of control input condition, but there is no fault output signal.

b5 : Under-voltage reset (UV_BSR).

b6 : Normal operation: IGBT ON and carrying current by triggering next signal from LOW to HIGH.

FNA27560 Rev. 1.0

www.fairchildsemi.com

Lower Arms

Control Input

Protection

Circuit state

SET

RESET

Internal IGBT

Gate-Emitter Voltage

Internal delay

at protection circuit

SC current trip level

Output Current

SC reference voltage

Sensing Voltage

of Sense Resistor

RC filter circuit

time constant

delay

Fault Output Signal

Figure 13. Short-Circuit Current Protection (Low-Side Operation only)

(with the external sense resistance and RC filter connection)

c1 : Normal operation: IGBT ON and carrying current.

c2 : Short-circuit current detection (SC trigger).

c3 : All low-side IGBTs gate are hard interrupted.

c4 : All low-side IGBTs turn OFF.

c5 : Fault output operation starts with a fixed pulse width according to the condition of the external capacitor C_FOD

c6 : Input HIGH: IGBT ON state, but during the active period of fault output, the IGBT doesn’t turn ON.

c7 : Fault output operation finishes, but IGBT doesn’t turn on until triggering the next signal from LOW to HIGH.

c8 : Normal operation: IGBT ON and carrying current.

Input/Output Interface Circuit

+5V (MCU or control power)

4.7 kΩ

SPM

IN_(UH)IN_(VH)IN_(WH)

IN_(UL)IN_(VL)IN_(WL)

MCU

V_FO

COM

Figure 14. Recommended MCU I/O Interface Circuit

Note:

14. RC coupling at each input might change depending on the PWM control scheme used in the application and the wiring impedance of the application’s printed circuit board.

The input signal section of the Motion SPM 2 product integrates 5 k(typ.) pull-down resistor. Therefore, when using an external filtering resistor, please pay attention to the

signal voltage drop at input terminal.

FNA27560 Rev. 1.0

www.fairchildsemi.com

P (1)

R₁

(30 ) IN_(WH)

V_CC

COM

Gating WH

GatingVH

GatingUH

(31) V_{CC(WH )}

C₄

R₂

OUT

(32 ) V _{BD (W )}

HVIC

(33) V_{B( W)}

(34 ) V_{S ( W)}

V_B

W (2)

(25)IN_{(VH )}

V_CC

COM

(26)V_{CC(VH )}

C₄

R₂

OUT

(27 ) V _{BD (V )}

(28)V_{B(V )}

(29) V_S(V)

V_B

V (3)

(19)IN_(UH)

V_DC

V_CC

COM

C₇

(21) V_CC(UH)

(20)COM_{(H )}

C₄

OUT

R₂

(22)V_BD(U)

(23)V_{B (U)}

(24) V_{S( U)}

C₁C₁

V_B

U (4)

5V line

R₁

R₃

C₅

(16 ) C _{FO D}

(15 ) V _FO

OUT

Fault

FOD

N_W(5 )

C₁

V_FO

(14 ) IN_(WL)

(13)IN_(VL)

(12)IN_(UL)

(10 ) V_CC(L)

R₁

Gating WL

Gating VL

GatingUL

LVIC

R₁

R₄

N_V(6)

15V line

V_CC

Shunt

Resistor

C₁C₁

5V line

C₁

Power

GND Line

C₂

(11 ) C OM_(L)

C₄

COM

(9) V_TH

(8 ) R_TH

R₄

C_SC

N_U(7)

Temp.

Monitoring

Thermistor

R_SC(18 )

R₅

(17) C

Sense

Resistor

Control

GND Line

W-Phase Current

V-Phase Current

U-Phase Current

Figure 15. Typical Application Circuit

Notes:

15. To avoid malfunction, the wiring of each input should be as short as possible (less than 2 - 3 cm).

16. V output is an open-drain type. This signal line should be pulled up to the positive side of the MCU or control power supply with a resistor that makes I up to 2 mA. Please

refer to Figure 14.

17. Fault out pulse width can be adjust by capacitor C connected to the C

terminal.

FOD

18. Input signal is active-HIGH type. There is a 5 k resistor inside the IC to pull-down each input signal line to GND. RC coupling circuits should be adopted for the prevention

of input signal oscillation. R C time constant should be selected in the range 50 ~ 150 ns (recommended R = 100 Ω, C = 1 nF).

19. Each wiring pattern inductance of point A should be minimized (recommend less than 10 nH). Use the shunt resistor R of surface mounted (SMD) type to reduce wiring

inductance. To prevent malfunction, wiring of point E should be connected to the terminal of the shunt resistor R as close as possible.

20. To insert the shunt resistor to measure each phase current at N , N , N terminal, it makes to change the trip level I about the short-ciruit current.

21. To prevent errors of the protection function, the wiring of points B, C, and D should be as short as possible. The wiring of B between C filter and R terminal should be

divided at the point that is close to the terminal of sense resistor R .

22. For stable protection function, use the sense resistor R with resistance variation within 1% and low inductance value.

23. In the short-circuit protection circuit, select the R C time constant in the range 1.0 ~ 1.5 s. R should be selected with a minimum of 10 times larger resistance than sense

resistor R . Do enough evaluaiton on the real system because short-circuit protection time may vary wiring pattern layout and value of the R C time constant.

6 6

24. Each capacitor should be mounted as close to the pins of the Motion SPM 2 product as possible.

25. To prevent surge destruction, the wiring between the smoothing capacitor C and the P & GND pins should be as short as possible. The use of a high-frequency non-inductive

capacitor of around 0.1 ~ 0.22 F between the P & GND pins is recommended.

26. Relays are used in most systems of electrical equipments in industrial application. In these cases, there should be sufficient distance between the MCU and the relays.

27. The Zener diode or transient voltage suppressor should be adapted for the protection of ICs from the surge destruction between each pair of control supply terminals

(recommanded Zener diode is 22 V / 1 W, which has the lower Zener impedance characteristic than about 15 Ω).

28. C of around seven times larger than bootstrap capacitor C is recommended.

29. Please choose the electrolytic capacitor with good temperature characteristic in C . Choose 0.1 ~ 0.2 F R-category ceramic capacitors with good temperature and frequency

characteristics in C .

FNA27560 Rev. 1.0

www.fairchildsemi.com

Detailed Package Outline Drawings (FNA27560)

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner

without notice. Please note the revision and/or data on the drawing and contact a FairchildSemiconductor representative to verify or

obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide therm and conditions,

specifically the the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/dwg/MO/MOD34BA.pdf

FNA27560 Rev. 1.0

www.fairchildsemi.com

FNA27560 Rev. 1.0

www.fairchildsemi.com

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

Literature Distribution Center for ON Semiconductor

19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

For additional information, please contact your local

Sales Representative

www.onsemi.com

FNA27560 [ONSEMI]

相关型号：

SI9130DB

SI9135LG-T1

SI9135LG-T1-E3

SI9135_11

SI9136_11

SI9130CG-T1-E3

SI9130LG-T1-E3

SI9130_11

SI9137

SI9137DB

SI9137LG

SI9122E