FOD260LS [ONSEMI]
8 引脚 DIP 10 Mb/s 单沟道高速 3.3V 逻辑门极输出光耦合器;
| 型号： | FOD260LS |
| 厂家： | 
ONSEMI |
| 描述： | 8 引脚 DIP 10 Mb/s 单沟道高速 3.3V 逻辑门极输出光耦合器 输出元件 光电 |
| 文件： | 总20页 (文件大小：903K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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October 2011
FOD060L, FOD260L
3.3V/5V High Speed-10 MBit/s
Logic Gate Optocouplers
■ Line receiver, data transmission
■ Data multiplexing
Features
■ FOD060L in SO8 and FOD260L in 8-pin DIP
■ Very high speed – 10 MBit/s
■ Superior CMR — 50 kV/µs at 1,000V peak
■ Fan-out of 8 over -40°C to +85°C
■ Logic gate output
■ Switching power supplies
■ Pulse transformer replacement
■ Computer-peripheral interface
Description
■ Strobable output
These optocouplers consist of an AlGaAS LED, optically
coupled to a very high speed integrated photo-detector
logic gate. Devices include a strobable output. This
output features an open collector, thereby permitting
wired OR outputs. The coupled parameters are
guaranteed over the temperature range of -40°C to
+85°C. A maximum input signal of 5 mA will provide a
minimum output sink current of 13 mA (fan out of 8). An
internal noise shield provides superior common mode
rejection of typically 50 kV/µs at 1,000V common mode.
■ Wired OR-open collector
■ Safety and regulatory approvals
– UL1577
– DIN EN/IEC 60747-5-2
Applications
■ Ground loop elimination
■ LSTTL to TTL, LSTTL or 5-volt CMOS
Package
VCC
N/C
+
1
8
8
8
8
VE
2
3
4
7
6
5
1
1
VF
_
1
VO
8
8
N/C
GND
1
1
Truth Table (Positive Logic)
Input
On
Enable
Output
H
L
Off
H
H
On
L
H
Off
L
H
On*
Off*
NC*
NC*
L*
H*
*Devices with pin 7 not connected.
A 0.1 µF bypass capacitor must be connected between pins 5 and 8. (See Note 1)
©2008 Fairchild Semiconductor Corporation
FOD060L, FOD260L Rev. 1.0.5
www.fairchildsemi.com
Absolute Maximum Ratings (No derating required up to 85°C)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Value
Units
°C
T
Storage Temperature
Operating Temperature
-40 to +125
-40 to +85
STG
T
°C
OPR
EMITTER
I
DC/Average Forward Input Current
50
mA
V
F
V
V
Enable Input Voltage, not to exceed V by more than 500 mV
V
+ 0.5V
5.0
E
R
CC
CC
Reverse Input Voltage
Power Dissipation
V
P
45
mW
I
DETECTOR
V
Supply Voltage
7.0
V
CC
(1 minute max)
I
Output Current
50
7.0
85
mA
V
O
V
Output Voltage
O
P
Collector Output Power Dissipation
mW
O
Recommended Operating Conditions
Symbol
Parameter
Min.
0
Max.
250
15
Units
µA
mA
V
I
Input Current, Low Level
FL
I
Input Current, High Level
Supply Voltage, Output
Enable Voltage, Low Level
Enable Voltage, High Level
Operating Temperature
Fan Out (TTL load)
*6.3
3.0
0
FH
V
5.5
CC
V
0.8
V
EL
V
2.0
-40
V
V
EH
CC
T
+85
8
°C
A
N
R
Output Pull-up Resistor
330
4K
Ω
L
*6.3 mA is a guard banded value which allows for at least 20% CTR degradation. Initial input current threshold value is 5.0 mA or less.
©2008 Fairchild Semiconductor Corporation
FOD060L, FOD260L Rev. 1.0.5
www.fairchildsemi.com
2
Electrical Characteristics (T = -40°C to +85°C unless otherwise specified. Typical value is measured at
A
T = 25°C and V = 3.3V)
A
CC
Individual Component Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Unit
EMITTER
V
Input Forward Voltage
I = 10 mA
1.4
1.8
V
F
F
T = 25°C
1.75
A
B
Input Reverse Breakdown Voltage
Input Capacitance
I
= 10 µA
5.0
V
pF
VR
R
C
V = 0, f = 1 MHz
6.0
IN
F
∆VF/∆TA Input Diode Temperature Coefficient I = 10 mA
-1.9
mV/°C
F
DETECTOR
I
High Level Supply Current
Low Level Supply Current
Low Level Enable Current
High Level Enable Current
High Level Enable Voltage
Low Level Enable Voltage
V
V
V
V
V
= 0.5 V, I = 0 mA, V = 3.3 V
3.5
3.2
7
mA
mA
mA
mA
V
CCH
E
F
CC
I
= 0.5 V, I = 0 mA, V = 3.3 V
10
CCL
E
F
CC
I
= 3.3 V, V = 0.5 V
-1.6
-1.6
EL
CC
CC
CC
E
I
= 3.3 V, V = 2.0 V
E
EH
V
= 3.3 V, I = 10 mA
2.0
1.27
1.18
EH
F
V
V
= 3.3 V, I = 10 mA (Note 2)
0.8
V
EL
CC
F
Switching Characteristics (T = -40°C to +85°C, V = 3.3 V, I = 7.5 mA unless otherwise specified.
A
CC
F
Typical value is measured at T = 25°C and V = 3.3V)
A
CC
Symbol
AC Characteristics
Test Conditions
Min.
Typ.
Max. Unit
T
Propagation Delay Time R = 350Ω, C = 15 pF (Fig. 9) (Note 3)
65
90
ns
PLH
L
L
to Output High Level
T
Propagation Delay Time R = 350Ω, C = 15 pF (Fig. 9) (Note 4)
43
75
ns
PHL
L
L
to Output Low Level
|T
– T
| Pulse Width Distortion
R = 350Ω, C = 15 pF (Fig. 9)
23
31
22
25
40
ns
ns
ns
PHL
PLH
L
L
t
Propagation Delay Skew R = 350Ω, C = 15 pF (Note 5)
L L
PSK
t
Output Rise Time
(10-90%)
R = 350Ω, C = 15 pF (Fig. 9)(Note 6)
L L
r
t
Output Fall Time
(90-10%)
R = 350Ω, C = 15 pF (Fig. 12) (Note 7)
3
ns
ns
f
L
L
t
t
Enable Propagation
Delay Time to Output
High Level
V
= 3 V, R = 350Ω, C = 15 pF
47
ELH
EHL
EH
L
L
(Fig. 10) (Note 8)
Enable Propagation
Delay Time to Output
Low Level
V
= 3 V, R = 350Ω, C = 15 pF
27
ns
EH
L
L
(Fig. 10) (Note 9)
CM
Common Mode
Transient Immunity
(at Output High Level)
R = 350Ω, T =25°C, I = 0 mA,
OH CM
(Fig. 11) (Note 10)
25,000
25,000
50,000
50,000
V/µs
V/µs
H
L
A
F
V
(Min.) = 2.0V, |V | = 1,000 V
CM
Common Mode
Transient Immunity
(at Output Low Level)
R = 350Ω, T =25°C, I = 7.5 mA,
L
L
A
F
V
(Max.) = 0.8 V, |V | = 1,000 V
OL CM
(Fig. 11) (Note 11)
©2008 Fairchild Semiconductor Corporation
FOD060L, FOD260L Rev. 1.0.5
www.fairchildsemi.com
3
Transfer Characteristics (T = -40°C to +85°C Unless otherwise specified. Typical value is measured at
A
T = 25°C and V = 3.3V)
A
CC
Symbol DC Characteristics
Test Conditions
Min.
Typ.
Max.
Unit
I
High Level Output Current I = 250 µA, V = 3.3 V, V = 3.3 V,
0.01
50
µA
OH
F
CC
O
V = 2.0 V (Note 2)
E
V
Low Level Output Voltage
Input Threshold Current
V
= 3.3 V, I = 5 mA, I = 13 mA,
0.3
1
0.6
5
V
OL
FT
CC
F
OL
V = 2.0 V (Note 2)
E
I
V
= 3.3 V, V = 0.6 V, I = 13 mA,
mA
CC
O
OL
V = 2.0 V (Note 2)
E
Isolation Characteristics (T = -40°C to +85°C Unless otherwise specified. Typical value is measured at
A
T = 25°C and V = 3.3V)
A
CC
Symbol
Characteristics
Test Conditions Min.
Typ.
Max.
Unit
I
Input-Output
Insulation Leakage Current
Relative humidity = 45%,
T = 25°C, t = 5 s,
1.0
µA
I-O
A
V
= 3000 VDC (Note 12)
I-O
V
Withstand Insulation Test
Voltage
I
≤ 2 µA, R < 50%,
V
ISO
IO
H
RMS
T = 25°C, t = 1 min.(Note 12)
A
3750
5000
FOD060L
FOD260L
12
R
C
Resistance (Input to Output)
V
= 500 V (Note 12)
10
Ω
I-O
I-O
Capacitance (Input to Output) f = 1 MHz (Note 12)
0.6
pF
I-O
Notes
1. The V supply to each optoisolator must be bypassed by a 0.1µF capacitor or larger. This can be either a ceramic
CC
or solid tantalum capacitor with good high frequency characteristic and should be connected as close as possible
to the package V and GND pins of each device.
CC
2. Enable Input – No pull up resistor required as the device has an internal pull up resistor.
3. t
– Propagation delay is measured from the 3.75 mA level on the HIGH to LOW transition of the input current
PLH
pulse to the 1.5V level on the LOW to HIGH transition of the output voltage pulse.
4. t – Propagation delay is measured from the 3.75 mA level on the LOW to HIGH transition of the input current
PHL
pulse to the 1.5V level on the HIGH to LOW transition of the output voltage pulse.
5. t is the worst case difference between t and t for any devices at the stated test conditions.
PSK
PHL
PLH
6. t – Rise time is measured from the 90% to the 10% levels on the LOW to HIGH transition of the output pulse.
r
7. t – Fall time is measured from the 10% to the 90% levels on the HIGH to LOW transition of the output pulse.
f
8. t
– Enable input propagation delay is measured from the 1.5V level on the HIGH to LOW transition of the input
ELH
voltage pulse to the 1.5V level on the LOW to HIGH transition of the output voltage pulse.
9. t – Enable input propagation delay is measured from the 1.5V level on the LOW to HIGH transition of the input
EHL
voltage pulse to the 1.5V level on the HIGH to LOW transition of the output voltage pulse.
10. CM – The maximum tolerable rate of rise of the common mode voltage to ensure the output will remain in the high
H
state (i.e., V
> 2.0 V). Measured in volts per microsecond (V/µs).
OUT
11. CM – The maximum tolerable rate of fall of the common mode voltage to ensure the output will remain in the low
L
output state (i.e., V
< 0.8 V). Measured in volts per microsecond (V/µs).
OUT
12. Device considered a two-terminal device: Pins 1, 2, 3 and 4 shorted together, and Pins 5, 6, 7 and 8 shorted
together.
©2008 Fairchild Semiconductor Corporation
FOD060L, FOD260L Rev. 1.0.5
www.fairchildsemi.com
4
Typical Performance Curves
Fig. 1 Input Forward Current vs.
Fig. 2 Input Threshold Current vs.
Ambient Temperature
Forward Voltage
100
2.5
2.0
1.5
1.0
0.5
0.0
V
V
= 3.3V
CC
= 0.6V
O
10
T
= 100°C
A
1
0.1
FOD060L
= 350Ω, 1kΩ, 4kΩ
R
L
T
T
= -40°C
= 0°C
T
= 85°C
A
A
A
FOD260L
= 350Ω, 1kΩ, 4kΩ
T
= 25°C
A
0.01
0.001
R
L
0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7
VF - Forward Voltage (V)
-40
-20
0
20
40
60
80
100
TA - Ambient Temperature (°C)
Fig. 4 High Level Output Current
vs. Ambient Temperature
Fig. 3 Low Level Output Voltage vs.
Ambient Temperature
0.6
0.5
0.4
0.3
0.2
0.1
0.0
20
16
12
8
V
= 3.3V
CC
= 2V
V
I
E
= 5mA
F
I
= 13mA
O
4
V
V
= V
= 3.3V
O
E
CC
= 2V
I
= 250 µA
F
0
-40
-40
-20
0
20
40
60
80
100
-20
0
20
40
60
80
100
TA - Ambient Temperature (°C)
TA - Ambient Temperature (°C)
Fig. 5 Low Level Output Current vs.
Fig. 6 Propagation Delay vs.
Ambient Temperature
Ambient Temperature
40
80
70
60
50
40
30
20
V
= 3.3V
CC
V
= 3.3V
CC
V
V
I
= 2V
E
35
30
25
20
15
10
5
I
= 7.5mA
F
= 0.6V
OL
R
= 350Ω
t
- FOD060L
L
= 5mA
PLH
F
t
- FOD260L
PLH
t
- FOD060L
PHL
t
- FOD260L
PHL
0
-40
-20
0
20
40
60
80
100
-40
-20
0
20
40
60
80
100
TA - Ambient Temperature (°C)
TA - Ambient Temperature (°C)
©2008 Fairchild Semiconductor Corporation
FOD060L, FOD260L Rev. 1.0.5
www.fairchildsemi.com
5
Typical Performance Curves
Fig. 7 Rise and Fall Times vs.
Fig. 8 Pulse Width Distortion vs.
Ambient Temperature
Ambient Temperature
35
30
25
20
15
10
5
V
I
= 3.3V
V
= 3.3V
CC
= 7.5mA
CC
F
I
= 7.5mA
30
25
20
15
10
5
F
RL = 350Ω
RL = 350Ω
t
r
FOD260L
FOD060L
t
f
0
0
-40
-40
-20
0
20
40
60
80
100
-20
0
20
40
60
80
100
TA - Ambient Temperature (°C)
TA - Ambient Temperature (°C)
©2008 Fairchild Semiconductor Corporation
FOD060L, FOD260L Rev. 1.0.5
www.fairchildsemi.com
6
Pulse Gen.
IF = 7.5 mA
+3.3V
t = t = 5 ns
f
r
Z
= 50 Ω
O
IF = 3.75 mA
Input
(IF)
VCC
1
8
7
6
5
tPHL
tPLH
Output
(VO)
0.1µF
Bypass
R
L
2
3
4
1.5 V
Input
Output
(V
Monitor
)
O
(I )
F
90%
10%
C
L
Output
(VO)
47Ω
GND
tf
tr
Fig. 9 Test Circuit and Waveforms for tPLH, tPHL, tr and tf.
Pulse
Input
Monitor
(VE)
Generator
tr = 5ns
ZO= 50Ω
+3.3V
3.0 V
1.5 V
Input
(VE )
VCC
1
2
3
4
8
7
6
5
tEHL
Output
(VO)
tELH
7.5 mA
RL
0.1µF
bypass
1.5 V
Output
(VO)
CL
GND
Fig. 10 Test Circuit tEHL and tELH
.
©2008 Fairchild Semiconductor Corporation
FOD060L, FOD260L Rev. 1.0.5
www.fairchildsemi.com
7
VCC
+3.3V
1
2
3
4
8
7
6
5
IF
0.1µf
bypass
350Ω
A
B
Output
(VO)
VFF
GND
VCM
Pulse Gen
VCM
0V
Peak
3.3V
VO
CMH
Switching Pos. (A), IF= 0
VO (Min)
VO (Max)
Switching Pos. (B), IF= 7.5 mA
VO
CML
0.5 V
Fig. 11 Test Circuit Common Mode Transient Immunity
©2008 Fairchild Semiconductor Corporation
FOD060L, FOD260L Rev. 1.0.5
www.fairchildsemi.com
8
Ordering Information
Part Number
Package
Packing Method
Tube (50 units per tube)
FOD060L
Small outline 8-pin
FOD060LR2
FOD260L
Small outline 8-pin
DIP 8-Pin
Tape and Reel (2.500 units per reel)
Tube (50 units per tube)
FOD260LS
FOD260LSD
FOD260LV
SMT 8-Pin (Lead Bend)
SMT 8-Pin (Lead Bend)
Tube (50 units per tube)
Tape and Reel (1,000 units per reel)
Tube (50 units per tube)
DIP 8-Pin, DIN EN/IEC 60747-5-2 option
FOD260LSV
FOD260LSDV
FOD260LTV
FOD260LTSV
FOD260LTSR2
SMT 8-Pin (Lead Bend), DIN EN/IEC 60747-5-2 option
SMT 8-Pin (Lead Bend), DIN EN/IEC 60747-5-2 option
DIP 8-Pin, 0.4” Lead Spacing, DIN EN/IEC 60747-5-2 option
SMT 8-Pin, 0.4” Lead Spacing, DIN EN/IEC 60747-5-2 option
SMT 8-Pin, 0.4” Lead Spacing
Tube (50 units per tube)
Tape and Reel (1,000 units per reel)
Tube (50 units per tube)
Tube (50 units per tube)
Tape and Reel (700 units per reel)
Tape and Reel (700 units per reel)
FOD260LTSR2V SMT 8-Pin, 0.4” Lead Spacing, DIN EN/IEC 60747-5-2 option
Marking Information
Small Outline
1
2
060L
5
X YY S1
4
3
Definitions
1
2
3
4
5
Fairchild logo
Device number
One digit year code, e.g., ‘8’
Two digit work week ranging from ‘01’ to ‘53’
Assembly package code
©2008 Fairchild Semiconductor Corporation
FOD060L, FOD260L Rev. 1.0.5
www.fairchildsemi.com
9
Marking Information (Continued)
DIP and SMT
1
2
6
260L
V XX YY B
5
3
4
Definitions
1
2
3
Fairchild logo
Device number
VDE mark (Note: Only appears on parts ordered with
DIN EN/IEC 60747-5-2 option – See order entry table)
4
5
6
Two digit year code, e.g., ‘11’
Two digit work week ranging from ‘01’ to ‘53’
Assembly package code
©2008 Fairchild Semiconductor Corporation
FOD060L, FOD260L Rev. 1.0.5
www.fairchildsemi.com
10
Carrier Tape Specification
Small Outline
8.0 0.10
2.0 0.05
3.50 0.20
0.30 MAX
Ø1.5 MIN
4.0 0.10
1.75 0.10
5.5 0.05
12.0 0.3
8.3 0.10
5.20 0.20
Ø1.5 0.1/-0
6.40 0.20
User Direction of Feed
0.1 MAX
Note:
All dimensions are in millimeters.
©2008 Fairchild Semiconductor Corporation
FOD060L, FOD260L Rev. 1.0.5
www.fairchildsemi.com
11
Carrier Tape Specification (Continued)
Option S
D0
P0
P2
t
E
K0
F
W
W1
P
User Direction of Feed
d
D1
Symbol
Description
Dimension in mm
16.0 0.3
0.30 0.05
4.0 0.1
W
t
Tape Width
Tape Thickness
P
Sprocket Hole Pitch
Sprocket Hole Diameter
Sprocket Hole Location
Pocket Location
0
D
1.55 0.05
1.75 0.10
7.5 0.1
0
E
F
P
2.0 0.1
2
P
Pocket Pitch
12.0 0.1
10.30 0.20
10.30 0.20
4.90 0.20
13.2 0.2
0.1 max
A
Pocket Dimensions
0
0
0
B
K
W
Cover Tape Width
1
d
Cover Tape Thickness
Max. Component Rotation or Tilt
Min. Bending Radius
10°
R
30
©2008 Fairchild Semiconductor Corporation
FOD060L, FOD260L Rev. 1.0.5
www.fairchildsemi.com
12
Carrier Tape Specification (Continued)
Option TS
D0
P0
P2
t
E
K0
F
W
W1
P
User Direction of Feed
d
D1
Symbol
Description
Dimension in mm
24.0 0.3
0.40 0.1
4.0 0.1
W
t
Tape Width
Tape Thickness
P
Sprocket Hole Pitch
Sprocket Hole Diameter
Sprocket Hole Location
Pocket Location
0
D
1.55 0.05
1.75 0.10
11.5 0.1
2.0 0.1
0
E
F
P
2
P
Pocket Pitch
16.0 0.1
12.80 0.1
10.35 0.1
5.7 0.1
A
Pocket Dimensions
0
0
0
B
K
W
Cover Tape Width
21.0 0.1
0.1 max
1
d
Cover Tape Thickness
Max. Component Rotation or Tilt
Min. Bending Radius
10°
R
30
©2008 Fairchild Semiconductor Corporation
FOD060L, FOD260L Rev. 1.0.5
www.fairchildsemi.com
13
Reflow Profile
Small Outline
300
280
260
240
220
200
180
160
140
120
100
80
260°C
>245°C = 42 Sec
Temperature
(°C)
Time above
183°C = 90 Sec
1.822°C/Sec Ramp up rate
60
40
33 Sec
20
0
0
60
120
180
270
360
Time (s)
©2008 Fairchild Semiconductor Corporation
FOD060L, FOD260L Rev. 1.0.5
www.fairchildsemi.com
14
Reflow Profile (Continued)
DIP and SMT
Max. Ramp-up Rate = 3°C/S
Max. Ramp-down Rate = 6°C/S
T
P
260
240
t
P
T
L
220
200
180
160
140
120
100
80
Tsmax
t
L
Preheat Area
Tsmin
t
s
60
40
20
0
120
Time 25°C to Peak
240
360
Time (seconds)
Profile Freature
Pb-Free Assembly Profile
150°C
Temperature Min. (Tsmin)
Temperature Max. (Tsmax)
200°C
Time (t ) from (Tsmin to Tsmax)
60–120 seconds
3°C/second max.
217°C
S
Ramp-up Rate (t to t )
L
P
Liquidous Temperature (T )
L
Time (t ) Maintained Above (T )
60–150 seconds
260°C +0°C / –5°C
30 seconds
L
L
Peak Body Package Temperature
Time (t ) within 5°C of 260°C
P
Ramp-down Rate (T to T )
6°C/second max.
8 minutes max.
P
L
Time 25°C to Peak Temperature
©2008 Fairchild Semiconductor Corporation
FOD060L, FOD260L Rev. 1.0.5
www.fairchildsemi.com
15
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