FOD3125TV [ONSEMI]
High Temperature, 2.5 A Output Current, Gate Drive Optocoupler;
| 型号： | FOD3125TV |
| 厂家： | 
ONSEMI |
| 描述： | High Temperature, 2.5 A Output Current, Gate Drive Optocoupler 栅 |
| 文件： | 总18页 (文件大小：301K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
High Temperature, 2.5 A
Output Current, Gate Drive
Optocoupler
FOD3125
Description
The FOD3125 is a 2.5 A Output Current Gate Drive Optocoupler,
capable of driving most medium IGBTs or MOSFETs across extended
industrial temperature range, −40°C to 125°C. It is ideally suited for
fast switching driving of power IGBTs and MOSFETs used in motor
control inverter applications, and high performance power system.
It utilizes ON Semiconductor patented coplanar packaging
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8
8
®
technology, Optoplanar , and optimized IC design to achieve high
1
1
noise immunity, characterized by high common mode rejection.
It consists of a gallium aluminum arsenide (AlGaAs) light emitting
diode optically coupled to an integrated circuit with a high−speed
driver for push−pull MOSFET output stage.
PDIP8 GW
CASE 709AD
PDIP8 GW
CASE 709AC
Features
8
8
• Extended Industrial Temperate Range, −40°C to 125°C
• High Noise Immunity characterized by 35 kV/ms minimum Common
Mode Rejection
1
1
PDIP8 6.6x3.81, 2.54P PDIP8 9.655x6.6, 2.54P
CASE 646BW CASE 646CQ
• 2.5 A Peak Output Current Driving Capability for Most 1200 V/
20 A IGBT
• Use of P−channel MOSFETs at Output Stage Enables Output Voltage
Swing close to the Supply Rail
FUNCTIONAL BLOCK DIAGRAM
• Wide Supply Voltage Range from 15 V to 30 V
• Fast Switching Speed
1
2
3
4
8
NC
ANODE
CATHODE
NC
V
V
V
V
DD
♦ 400 ns maximum Propagation Delay
♦ 100 ns maximum Pulse Width Distortion
• Under Voltage LockOut (UVLO) with Hysteresis
7
6
5
O2
O1
SS
• Safety and Regulatory Approvals
♦ UL1577, 5000 V
for 1 minute
RMS
♦ DIN EN/IEC60747−5−5 (pending approval)
• >8.0 mm Clearance and Creepage Distance (Option ‘T’ or ‘TS’)
• 1,414 V Peak Working Insulation Voltage (VIORM)
• This is a Pb−Free Device
Applications
Note: A 0.1 mF bypass capacitor must be
• Industrial Inverter
connected between pins 5 and 8.
• Uninterruptible Power Supply
• Induction Heating
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 13 of this data sheet.
• Isolated IGBT/Power MOSFET Gate Drive
Table 1. TRUTH TABLE
LED
Off
V
O
V
DD
– V “Positive Going” (Turn−on)
V
DD
– V “Negative Going” (Turn−off)
SS
SS
0 V to 30 V
0 V to 11 V
11 V to 14 V
14 V to 30 V
0 V to 30 V
0 V to 9.7 V
Low
Low
On
On
On
9.7 V to 12.7 V
12.7 V to 30 V
Transition
High
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
March, 2020 − Rev. 2
FOD3125/D
FOD3125
Table 2. PIN DEFINITIONS
Pin #
Name
Description
1
2
3
4
NC
Anode
Cathode
NC
Not Connected
LED Anode
LED Cathode
Not Connected
5
6
7
8
Negative Supply Voltage
VSS
VO2
VO1
VDD
Output Voltage 2 (internally connected to VO1
Output Voltage 1
)
Positive Supply Voltage
Table 3. SAFETY AND INSULATION RATINGS
As per DIN EN/IEC 60747−5−5 (pending approval). This optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
Parameter
Min.
Typ.
Max.
Unit
Installation Classifications per DIN VDE 0110/1.89 Table 1
For Rated Main Voltage < 150 Vrms
I–IV
I–IV
For Rated Main Voltage < 300 Vrms
For Rated Main Voltage < 450 Vrms
For Rated Main Voltage < 600 Vrms
For Rated Main Voltage < 1000 Vrms (option T, TS)
Climatic Classification
I–III
I–III
I–III
40/125/21
2
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
CTI
175
Input to Output Test Voltage, Method b,
2651
V
PR
VIORM x 1.875 = VPR, 100% Production Test with tm = 1 second, Partial
Discharge < 5 pC
Input to Output Test Voltage, Method a,
2262
VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 second, Partial
Discharge < 5 pC
Max Working Insulation Voltage
1414
6000
≥ 8
V
Vpeak
Vpeak
mm
mm
mm
mm
°C
IORM
V
Highest Allowable Over Voltage
IOTM
External Creepage
External Clearance
≥ 7.4
≥ 10.16
≥ 0.5
175
External Clearance (for Option T or TS, 0.4” Lead Spacing)
Insulation Thickness
TCase
Case Temperature – Maximum Values Allowed in the Event of a Failure
Input Current – Maximum Values Allowed in the Event of a Failure
400
mA
I
S,INPUT
Output Power (Duty Factor ≤ 2.7 %) – Maximum Values Allowed in the
Event of a Failure
700
mW
P
S,OUTPUT
9
> 10
W
Insulation Resistance at TS, VIO = 500 V – Maximum Values Allowed in the
Event of a Failure
R
IO
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2
FOD3125
Table 4. ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified.)
A
Symbol
Parameter
Value
Units
Storage Temperature
−40 to +125
°C
T
STG
Operating Temperature
Junction Temperature
−40 to +125
−40 to +125
260 for 10 sec
°C
°C
°C
T
OPR
TJ
Lead Wave Solder Temperature
T
SOL
(refer to page 12 for reflow solder profile)
Average Input Current
Operating Frequency (1)
Reverse Input Voltage
Peak Output Current (2)
25
50
5
mA
kHz
V
I
F(AVG)
f
VR
3
A
V
I
O(PEAK)
V
– V
Supply Voltage
0 to 35
0 to 30
0 to VDD
500
DD
SS
T
A
≥ 90°C
Peak Output Voltage
V
V
O(PEAK)
Input Signal Rise and Fall Time
Input Power Dissipation (3) (5)
ns
t
, t
R(IN) F(IN)
PDI
45
mW
mW
Output Power Dissipation (4) (5)
PDO
250
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Exponential Waveform, I
2. Maximum pulse width = 10 ms, maximum duty cycle = 1.1 %.
≤ |2.5 A| ≤ 0.3 ms
O(PEAK)
3. Derate linearly above 87°C, free air temperature at a rate of 0.77 mW/°C.
4. Derate linearly above 100°C, free air temperature at a rate of 5.7 mW/°C.
5. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside
these ratings.
Table 5. RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Ambient Operating Temperature
Value
Units
−40 to +125
°C
T
A
Power Supply
15 to 30
7 to 16
0 to 0.8
V
mA
V
V
– V
DD
SS
I
Input Current (ON)
Input Voltage (OFF)
F(ON)
V
F(OFF)
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
Table 6. ISOLATION CHARACTERISTICS
Apply over all recommended conditions, typical value is measured at T = 25°C
A
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Units
TA = 25°C, R.H.< 50 %, t = 1.0 minute,
II−O ≤ 10 mA, 50 Hz (6) (7)
5000
V
RMS
Input−Output Isolation Voltage
V
ISO
VI−O = 500 V (6)
11
10
W
Isolation Resistance
Isolation Capacitance
R
C
ISO
ISO
VI−O = 0 V, Frequency = 1.0 MHz (6)
1
pF
6. Device is considered a two terminal device: pins 2 and 3 are shorted together and pins 5, 6, 7 and 8 are shorted together.
7. 5,000 VRMS for 1 minute duration is equivalent to 6,000 VACRMS for 1 second duration.
Table 7. ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Input Forward Voltage
Conditions
IF = 10 mA
Min.
Typ.
1.5
Max.
Units
V
VF
1.1
1.8
D(VF / TA) Temperature Coefficient of Forward
−1.8
mV/°C
Voltage
5
BV
Input Reverse Breakdown Voltage
IR = 10 mA
V
R
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FOD3125
Table 7. ELECTRICAL CHARACTERISTICS (continued)
Symbol
CIN
Parameter
Conditions
Min.
Typ.
20
Max.
Units
pF
Input Capacitance
f = 1 MHz, VF = 0 V
High Level Output Current (1)
Low Level Output Current (1)
IOH
VO = VDD – 3 V
−1.0
−2.0
1.0
−2.0
A
VO = VDD – 6 V
IOL
VOH
VOL
VO = VSS + 3 V
2.0
A
V
V
VO = VSS + 6 V
2.0
High Level Output Voltage
Low Level Output Voltage
IF = 10 mA, IO = −2.5 A
IF = 10 mA, IO = −100 mA
IF = 0 mA, IO = 2.5 A
IF = 0 mA, IO = 100 mA
VO = Open, IF = 7 to 16 mA
VO = Open, VF = 0 to 0.8 V
IO = 0 mA, VO > 5 V
IO = 0 mA, VO < 5 V
IF = 1 0mA, VO > 5 V
IF = 10 mA, VO < 5 V
VDD – 6.25 V VDD – 2.5 V
VDD – 0.25 V VDD – 0.1 V
VSS + 2.5 V VSS + 6.25 V
VSS + 0.1 V VSS + 0.25 V
IDDH
IDDL
High Level Supply Current
2.8
2.8
2.3
3.8
3.8
5.0
mA
mA
mA
V
Low Level Supply Current
IFLH
Threshold Input Current Low to High
Threshold Input Voltage High to Low
0.8
VFHL
VUVLO+
VUVLO–
11
12.7
11.2
1.5
14
V
Under Voltage Lockout Threshold
9.7
12.7
V
UVLOHYS Under Voltage Lockout Threshold
Hysteresis
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
8. Maximum pulse width = 10 ms, maximum duty cycle = 1.1 %.
Table 8. SWITCHING CHARACTERISTICS
Apply over all recommended conditions, typical value is measured at V = 30 V, V = Ground, T = 25°C unless otherwise specified.
DD
SS
A
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Units
150
275
400
ns
tPHL
IF = 7 mA to 16 mA,
Propagation Delay Time to Logic Low Output
Rg = 10 W, Cg = 10 nF,
f = 10 kHz, Duty Cycle = 50 %
150
255
20
400
ns
tPLH
Propagation Delay Time to Logic High Output
Pulse Width Distortion, | tPHL – tPLH |
PWD
100
250
ns
ns
PDD
−250
Propagation Delay Difference Between Any
(9)
(Skew)
Two Parts or Channels, (tPHL – tPLH
Output Rise Time (10% – 90%)
Output Fall Time (90% – 10%)
UVLO Turn On Delay
)
tr
60
60
ns
ns
tf
IF = 10 mA , VO > 5 V
IF = 10 mA , VO < 5 V
1.6
0.4
50
ms
tUVLO ON
tUVLO OFF
| CMH |
UVLO Turn Off Delay
ms
TA = 25°C, VDD = 30 V,
IF = 7 to 16 mA, VCM = 2000 V (10)
35
35
kV/ms
Common Mode Transient Immunity at Output
High
| CML |
TA = 25°C, VDD = 30 V, VF = 0 V,
50
kV/ms
Common Mode Transient Immunity at Output
Low
V
CM = 2000 V (11)
9. The difference between tPHL and tPLH between any two FOD3125 parts under same test conditions.
10.Common mode transient immunity at output high is the maximum tolerable negative dVcm/dt on the trailing edge of the common mode
impulse signal, Vcm, to assure that the output will remain high (i.e., VO > 15.0 V).
11. Common mode transient immunity at output low is the maximum tolerable positive dVcm/dt on the leading edge of the common pulse signal,
Vcm, to assure that the output will remain low (i.e., VO < 1.0 V).
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FOD3125
TYPICAL PERFORMANCE CURVES
0.5
0.0
0.00
−0.05
−0.10
−0.5
−1.0
−1.5
−2.0
−2.5
−3.0
o
T = −40 C
A
−0.15
−0.20
−0.25
−0.30
o
T = 25 C
A
Frequency = 250 Hz,
Duty Cycle = 0.1%
V
= 15 V to 30 V
= 0V
DD
V
I = 7 mA to 16 mA
SS
F
I = 7 mA to 16 mA
F
I = −100 mA
O
V
= 15 V to 30 V
= 0 V
DD
o
T = 125 C
A
V
SS
0.0
0.5
1.0
1.5
2.0
2.5
−40 −20
0
20
40
60
80
100 120
o
I
− OUTPUT HIGH CURRENT (A)
T − AMBIENT TEMPERATURE ( C)
OH
A
Figure 2. Output High Voltage Drop vs. Ambient
Temperature
Figure 1. Output High Voltage Drop vs. Output High
Current
4
8
Frequency = 250 Hz,
f = 200 Hz
Duty Cycle = 99.9%
Duty Cycle = 0.2%
V (off) = −3 V to 0.8 V
V
− V
= 15 V to 30 V
F
DD
SS
V
V
= 15 V to 30 V
= 0 V
I = 7 mA to 16 mA
3
2
1
0
6
4
2
0
DD
F
SS
o
T = 125 C
A
V = V
− 6 V
DD
O
V = V − 3 V
O
DD
o
T = 25 C
A
o
T = −40 C
A
0.0
0.5
1.0
1.5
2.0
2.5
−40 −20
0
20
40
60
80
100 120
o
I
− OUTPUT LOW CURRENT (A)
T − AMBIENT TEMPERATURE ( C)
OL
A
Figure 4. Output Low Voltage vs. Output Low Current
Figure 3. Output High Current vs. Ambient
Temperature
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FOD3125
8
6
4
2
0
0.25
0.20
0.15
0.10
0.05
0.00
V
= 15 V to 30 V
= 0V
f = 200 Hz
Duty Cycle = 99.8%
DD
V
SS
V
− V
= 15 V to 30 V
DD
SS
V = −3 V to 0.8 V
F
I = 100 mA
O
I = 7 mA to 16 mA
F
V − V = 6 V
O
SS
V − V = 3 V
O
SS
−40 −20
0
20
40
60
80
100 120
−40 −20
0
20
40
60
80
100 120
o
o
T − AMBIENT TEMPERATURE ( C)
T − AMBIENT TEMPERATURE ( C)
A
A
Figure 5. Output Low Voltage vs. Ambient
Temperature
Figure 6. Output Low Current vs. Ambient
Temperature
3.6
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
3.2
2.8
2.4
2.0
I
DDH
I
DDH
I
DDL
I
DDL
V
= 30 V
= 0V
I = 0 mA (for I
)
DD
F
DDL
V
I = 10 mA (for I
)
SS
F
DDH
V
SS
= 0 V
I = 0 mA (for I
F
)
DDL
T = 25°C
A
I = 10 mA (for I
F
)
DDH
15
20
25
30
−40 −20
0
20
40
60
80
100 120
V
− SUPPLY VOLTAGE (V)
o
DD
T − AMBIENT TEMPERATURE ( C)
A
Figure 8. Supply Current vs. Supply Voltage
Figure 7. Supply Current vs. Ambient Temperature
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FOD3125
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
400
350
300
250
200
150
100
V
= 15 V to 30V
= 0 V
DD
I = 10 mA
F
V
SS
T = 25°C
A
Output = Open
R = 10 W, C = 10 nF
g
g
f = 10 KHz,
Duty Cycle = 50%
t
PHL
PLH
t
−40 −20
0
20
40
60
80 100 120
15
18
21
24
27
30
V
DD
− SUPPLY VOLTAGE (V)
T − AMBIENT TEMPERATURE (°C)
A
Figure 10. Propagation Delay vs. Supply Voltage
Figure 9. Low to High Input Current Threshold vs.
Ambient Temperature
400
500
V
= 30 V, V = 0 V
SS
DD
I = 10 mA
F
R = 10 W, C = 10 nF
g
g
V
DD
= 30 V, V = 0 V
SS
T = 25°C
A
R = 10 W, C = 10 nF
g
g
f = 10 KHz,
Duty Cycle = 50%
400
300
200
100
f = 10 KHz,
Duty Cycle = 50%
t
t
300
200
100
PHL
PLH
t
PHL
t
PLH
6
8
10
12
14
16
−40 −20
0
20
40
60
80
100 120
I − LED FORWARD CURRENT (mA)
F
T − AMBIENT TEMPERATURE (°C)
A
Figure 12. Propagation Delay vs. Ambient
Temperature
Figure 11. Propagation Delay vs. LED Forward
Current
500
500
I = 10 mA
F
I = 10 mA
F
V
DD
= 30 V, V = 0 V
SS
V
DD
= 30 V, V = 0 V
SS
C = 10 nF
g
R = 10 W
g
400
300
200
100
T = 25°C
400
300
200
100
T = 25°C
Duty Cycle = 50%
f = 10 kHz
A
A
Duty Cycle = 50%
f = 10 kHz
t
PHL
t
PHL
t
PLH
t
PLH
0
10
20
30
40
50
0
20
40
60
80
100
R − SERIES LOAD RESISTANCE (W)
g
C − SERIES LOAD CAPACITANCE (nF)
g
Figure 13. Propagation Delay vs. Series Load
Resistance
Figure 14. Propagation Delay vs. Load Capacitance
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FOD3125
100
10
35
30
25
20
15
10
5
V
= 30 V
DD
T = 25°C
A
T = 125°C
A
1
T = −40°C
A
0.1
T = 25°C
A
0.01
0.001
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
0
1
2
3
4
5
V − FORWARD VOLTAGE (V)
F
I − FORWARD CURRENT (mA)
F
Figure 16. Input Forward Current vs. Forward Voltage
Figure 15. Transfer Characteristics
15
10
5
(12.90V, 12.89 V)
(11.50V, 11.50V)
(12.85V,0 V)
15
(11.45V, 0V)
10
0
0
5
20
V
DD
− V − FORWARD VOLTAGE (V)
SS
Figure 17. Under Voltage Lockout
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FOD3125
TEST CIRCUIT
Power Supply
+
V
= 15 V to 30 V
DD
+
C2
47 mF
C1
0.1 mF
Pulse Generator
1
2
3
4
8
7
6
PW = 4.99 ms
Period = 5 ms
Pulse−In
R
= 50 ꢀ
OUT
Iol
R2
100 ꢀ
Power Supply
V = 6 V
+
+
C4
47 mF
C3
0.1 mF
D1
VOL
LED−IFmon
5
R1
100 ꢀ
To Scope
Test Conditions:
Frequency = 200 Hz
Duty Cycle = 99.8 %
V
= 15 V to 30 V
DD
VSS = 0 V
V
= −3.0 V to 0.8 V
F(OFF)
Figure 18. IOL Test Circuit
Power Supply
+
V
= 15 V to 30 V
+
DD
C2
47 mF
C1
0.1 mF
Pulse Generator
1
8
7
PW = 10 ms
Period = 5 ms
Pulse−In
R
= 50 ꢀ
OUT
+
–
2
3
4
Power Supply
V = 6 V
+
C4
47 mF
C3
0.1 mF
Ioh
R2
100 ꢀ
6
D1
VOH
LED−IFmon
Current
Probe
5
To Scope
R1
100 ꢀ
Test Conditions:
Frequency = 200 Hz
Duty Cycle = 0.2 %
= 15 V to 30 V
= 0 V
V
V
DD
SS
I
= 7 mA to 16 mA
F
Figure 19. IOH Test Circuit
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FOD3125
1
2
3
4
8
7
6
5
0.1 mF
+
–
V
= 15 to 30 V
= 15 to 30 V
= 30 V
I
= 7 to 16 mA
DD
F
V
O
100 mA
Figure 20. VOH Test Circuit
1
2
3
4
8
7
100 mA
+
–
0.1 mF
V
DD
V
6
5
O
Figure 21. VOL Test Circuit
1
2
3
4
8
7
6
5
0.1 mF
+
–
V
I
= 7 to 16 mA
DD
F
V
O
Figure 22. IDDH Test Circuit
1
2
3
4
8
7
6
5
0.1 mF
+
–
+
–
V
= 30 V
V
= 0 to 0.8 V
DD
F
V
O
Figure 23. IDDL Test Circuit
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10
FOD3125
1
2
3
4
8
7
6
5
0.1 mF
+
–
V
= 15 to 30 V
DD
IF
V
> 5 V
O
Figure 24. IFLH Test Circuit
1
2
3
4
8
7
6
5
0.1 mF
+
–
+
–
V
= 15 to 30 V
V
= 0 to 0.8 V
DD
F
V
O
Figure 25. VFHL Test Circuit
1
2
3
4
8
7
6
5
0.1 ∝F
+
–
15 V or 30 V
Ramp
I
= 10 mA
F
V
DD
V
= 5 V
O
Figure 26. UVLO Test Circuit
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FOD3125
1
2
3
4
8
7
6
5
0.1 mF
V
O
+
–
V
= 15 to 30 V
DD
+
–
Rg = 10 W
Probe
50 W
F = 10 kHz
DC = 50 %
Cg = 10 nF
I
F
t
t
f
r
90 %
50 %
10 %
V
OUT
t
t
PHL
PLH
Figure 27. tPHL, tPLH, tR and tF Test Circuit and Waveforms
1
2
3
4
8
7
6
5
I
F
A
B
0.1 mF
+
–
V
= 30V
DD
+
–
V
5 V
O
+ –
V
= 2,000 V
CM
V
CM
0V
V
Dt
V
O
O
OH
Switch at A: I = 10 mA
F
V
V
OL
Switch at B: I = 0 mA
F
Figure 28. CMR Test Circuit and Waveforms
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12
FOD3125
REFLOW PROFILE
245C, 10–30 s
300
250
200
150
100
50
260C peak
Time above 183C, <160 sec
Ramp up = 2–10C/sec
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Time (Minute)
Notes:
• Peak reflow temperature: 260 C (package surface temperature)
• Time of temperature higher than 183 C for 160 seconds or less
• One time soldering reflow is recommended
Figure 29. Reflow Profile
ORDERING INFORMATION
Part Number
†
Package
Shipping
FOD3125
DIP 8−Pin
SMT 8−Pin (Lead Bend)
50 / Tube
50 / Tube
FOD3125S
FOD3125SD
FOD3125V
SMT 8−Pin (Lead Bend)
1,000 / Tape & Reel
50 / Tube
DIP 8−Pin, DIN EN/IEC 60747−5−5 option (pending approval)
SMT 8−Pin (Lead Bend), DIN EN/IEC 60747−5−5 option (pending approval)
SMT 8−Pin (Lead Bend), DIN EN/IEC 60747−5−5 option (pending approval)
FOD3125SV
FOD3125SDV
FOD3125TV
FOD3125TSV
FOD3125TSR2V
50 / Tube
1,000 / Tape & Reel
50 / Tube
DIP 8−Pin, 0.4” Lead Spacing, DIN EN/IEC 60747−5−5 option (pending approval)
SMT 8−Pin, 0.4” Lead Spacing, DIN EN/IEC 60747−5−5 option (pending approval)
SMT 8−Pin, 0.4” Lead Spacing, DIN EN/IEC 60747−5−5 option (pending approval)
50 / Tube
1,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D
MARKING INFORMATION
Definitions
1
1
2
3
Company logo
Device number
ON
2
6
3125
V XX YY B
DIN EN/IEC60747−5−5 Option (pending approval)
(only appears on component ordered with this option)
4
5
6
Two digit year code, e.g., ‘19’
Two digit work week ranging from ‘01’ to ‘53’
Assembly package code
5
3
4
Figure 30. Device Marking
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13
FOD3125
CARRIER TAPE SPECIFICATIONS (OPTION SD)
D0
P0
P2
t
E
K0
F
W
W1
P
UserDirectionofFeed
d
D1
Figure 31. Carrier Tape Specifications
Description
Symbol
Dimension in mm
16.0 0.3
0.30 0.05
4.0 0.1
W
t
Tape Width
Tape Thickness
P0
D0
E
Sprocket Hole Pitch
Sprocket Hole Diameter
Sprocket Hole Location
Pocket Location
1.55 0.05
1.75 0.10
7.5 0.1
F
P2
P
2.0 0.1
Pocket Pitch
12.0 0.1
10.30 0.20
10.30 0.20
4.90 0.20
13.2 0.2
0.1 max
A0
B0
K0
W1
d
Pocket Dimensions
Cover Tape Width
Cover Tape Thickness
Max. Component Rotation or Tilt
Min. Bending Radius
10°
R
30
OPTOPLANAR is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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14
FOD3125
PACKAGE DIMENSIONS (OPTION S)
PDIP8 GW
CASE 709AC
ISSUE O
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15
FOD3125
PACKAGE DIMENSIONS (OPTION TS)
PDIP8 GW
CASE 709AD
ISSUE O
www.onsemi.com
16
FOD3125
PACKAGE DIMENSIONS (OPTION T)
PDIP8 6.6x3.81, 2.54P
CASE 646BW
ISSUE O
www.onsemi.com
17
FOD3125
PACKAGE DIMENSIONS
PDIP8 9.655x6.6, 2.54P
CASE 646CQ
ISSUE O
ON Semiconductor and
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