FOD3150 [ONSEMI]
高抗噪能力、1.0A输出电流、栅极驱动光电耦合器;型号: | FOD3150 |
厂家: | ONSEMI |
描述: | 高抗噪能力、1.0A输出电流、栅极驱动光电耦合器 栅极驱动 光电 |
文件: | 总18页 (文件大小:499K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Gate Drive Optocoupler,
High Noise Immunity,
1.0 A Output Current
FOD3150
Description
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The FOD3150 is a 1.0 A Output Current Gate Drive Optocoupler,
capable of driving most 800 V / 20 A IGBT / MOSFET. It is ideally
suited for fast switching driving of power IGBT and MOSFETs used
in motor control inverter applications, and high performance power
system.
It utilizes ON Semiconductor patented coplanar packaging
technology, Optoplanar , and optimized IC design to achieve high
noise immunity, characterized by high common mode rejection.
It consists of a gallium aluminum arsenide (AlGaAs) light emitting
diode optically coupled to an integrated circuit with a high−speed
driver for push−pull MOSFET output stage.
8
8
®
1
1
PDIP8 GW
PDIP8 GW
CASE 709AD
CASE 709AC
Features
8
8
• High Noise Immunity characterized by 20 kV/ms minimum Common
Mode Rejection
1
1
PDIP8 6.6x3.81, 2.54P PDIP8 9.655x6.6, 2.54P
• Use of P−channel MOSFETs at Output Stage Enables Output Voltage
Swing close to the Supply Rail
CASE 646BW CASE 646CQ
• Wide Supply Voltage Range from 15 V to 30 V
FUNCTIONAL BLOCK DIAGRAM
• Fast Switching Speed
♦ 500 ns maximum Propagation Delay
♦ 300 ns maximum Pulse Width Distortion
• Under Voltage LockOut (UVLO) with Hysteresis
1
2
3
4
8
NC
ANODE
CATHODE
NC
V
V
V
V
DD
• Extended Industrial Temperate Range, −40°C to 100°C Temperature
Range
7
6
5
O2
O1
SS
• Safety and Regulatory Approvals
♦ UL1577, 5000 V
for 1 minute
RMS
♦ DIN EN/IEC60747−5−5
• >8.0 mm Clearance and Creepage Distance (Option ‘T’)
• This is a Pb−Free Device
Applications
• Industrial Inverter
Note: A 0.1 mF bypass capacitor must be
• Uninterruptible Power Supply
• Induction Heating
connected between pins 5 and 8.
• Isolated IGBT/Power MOSFET Gate Drive
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.
Related Resources
• FOD3120, 2.5 A Output Current, Gate Drive Optocoupler Datasheet
• www.onsemi.com/products/opto/
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
January, 2021 − Rev. 5
FOD3150/D
FOD3150
Table 1. TRUTH TABLE
LED
Off
V
O
V
DD
– V “Positive Going” (Turn−on)
V
– V “Negative Going” (Turn−off)
SS
DD SS
0 V to 30 V
0 V to 11 V
11 V to 14 V
14 V to 30 V
0 V to 30 V
0 V to 9.7 V
Low
Low
On
On
On
9.7 V to 12.7 V
12.7 V to 30 V
Transition
High
Table 2. PIN DEFINITIONS
Pin #
Name
Description
1
2
3
4
NC
Anode
Cathode
NC
Not Connected
LED Anode
LED Cathode
Not Connected
5
6
7
8
Negative Supply Voltage
V
SS
Output Voltage 2 (internally connected to VO1
Output Voltage 1
)
VO2
VO1
Positive Supply Voltage
V
DD
Table 3. SAFETY AND INSULATION RATINGS
As per IEC 60747−5−2. This optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
Parameter
Min.
Typ.
Max.
Unit
Installation Classifications per DIN VDE 0110/1.89 Table 1
For Rated Main Voltage < 150 Vrms
I–IV
I–IV
For Rated Main Voltage < 300 Vrms
For Rated Main Voltage < 450 Vrms
For Rated Main Voltage < 600 Vrms
Climatic Classification
I–III
I–III
55/100/21
2
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
CTI
175
Input to Output Test Voltage, Method b,
1669
V
PR
VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s,
Partial Discharge < 5 pC
Input to Output Test Voltage, Method a,
1335
VIORM x 1.5 = VPR, Type and Sample Test with tm = 60 s,
Partial Discharge < 5 pC
Max Working Insulation Voltage
Highest Allowable Over Voltage
External Creepage
890
6000
8
V
Vpeak
Vpeak
mm
IORM
V
IOTM
External Clearance
7.4
mm
External Clearance (for Option T−0.4” Lead Spacing)
Insulation Thickness
10.16
0.5
mm
mm
TCase
Safety Limit Values – Maximum Values Allowed in the Event of a Failure
Case Temperature
°C
150
Input Current
25
mA
mW
W
I
S,INPUT
Output Power (Duty Factor ≤ 2.7 %)
Insulation Resistance at TS, VIO = 500 V
250
P
S,OUTPUT
9
10
R
IO
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2
FOD3150
Table 4. ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified.)
A
Symbol
Parameter
Value
Units
Storage Temperature
−55 to +125
°C
T
STG
Operating Temperature
Junction Temperature
−40 to +100
−40 to +125
260 for 10 sec
°C
°C
°C
T
OPR
TJ
Lead Wave Solder Temperature
T
SOL
(refer to page 12 for reflow solder profile)
Average Input Current
Reverse Input Voltage
Peak Output Current (1)
25
5
mA
V
I
F(AVG)
VR
1.5
A
I
O(PEAK)
Supply Voltage
0 to 35
0 to VDD
500
V
V
V
– V
DD
SS
Peak Output Voltage
V
O(PEAK)
Input Signal Rise and Fall Time
Input Power Dissipation (2) (4)
ns
t
, t
R(IN) F(IN)
PDI
45
mW
mW
Output Power Dissipation (3) (4)
PDO
250
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Maximum pulse width = 10 ms, maximum duty cycle = 0.2 %.
2. Derate linearly above 87°C, free air temperature at a rate of 0.77 mW/°C.
3. No derating required across temperature range.
4. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside
these ratings.
Table 5. RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Ambient Operating Temperature
Value
Units
−40 to +100
°C
T
A
Power Supply
15 to 30
7 to 16
0 to 0.8
V
mA
V
V
– V
DD
SS
I
Input Current (ON)
Input Voltage (OFF)
F(ON)
V
F(OFF)
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
Table 6. ISOLATION CHARACTERISTICS
Apply over all recommended conditions, typical value is measured at T = 25°C
A
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Units
TA = 25°C, R.H.< 50 %, t = 1.0 minute,
II−O ≤ 10 mA, 50 Hz (5) (6)
5000
V
RMS
Input−Output Isolation Voltage
V
ISO
VI−O = 500 V (5)
11
10
W
Isolation Resistance
Isolation Capacitance
R
C
ISO
ISO
VI−O = 0 V, Frequency = 1.0 MHz (5)
1
pF
5. Device is considered a two terminal device: pins 2 and 3 are shorted together and pins 5, 6, 7 and 8 are shorted together.
6. 5,000 VRMS for 1 minute duration is equivalent to 6,000 VACRMS for 1 second duration.
Table 7. ELECTRICAL CHARACTERISTICS
Apply over all recommended conditions, typical value is measured at V = 30 V, V = Ground, T = 25°C unless otherwise specified.
DD
SS
A
Symbol
Parameter
Input Forward Voltage
Conditions
Min.
Typ.
Max.
Units
VF
IF = 10 mA
1.2
1.5
1.8
V
D(VF / TA)
−1.8
mV/°C
Temperature Coefficient of Forward
Voltage
5
BV
Input Reverse Breakdown Voltage
IR = 10 mA
V
R
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FOD3150
Table 7. ELECTRICAL CHARACTERISTICS (continued)
Apply over all recommended conditions, typical value is measured at V = 30 V, V = Ground, T = 25°C unless otherwise specified.
DD
SS
A
Symbol
Parameter
Input Capacitance
Conditions
Min.
Typ.
Max.
Units
pF
C
f = 1 MHz, VF = 0 V
VO = VDD – 0.75 V
60
IN
(7)
(7)
High Level Output Current
I
0.2
1.0
A
OH
VO = VDD – 4 V
Low Level Output Current
I
OL
VO = VDD + 0.75 V
0.2
A
V
V
VO = VDD + 4 V
1.0
V
OH
High Level Output Voltage
Low Level Output Voltage
IF = 10 mA, IO = −1 A
IF = 10 mA, IO = −100 mA
IF = 0 mA, IO = 1 A
VDD – 6 V
VDD – 0.5 V
VDD – 4 V
VDD – 0.1 V
VSS + 4 V
VSS + 0.1 V
2.8
V
OL
VSS + 6 V
IF = 0 mA, IO = 100 mA
VO = Open, IF = 7 to 16 mA
VO = Open, VF = 0 to 0.8 V
IO = 0 mA, VO > 5 V
VSS + 0.5 V
I
High Level Supply Current
Low Level Supply Current
5
5
mA
mA
mA
DDH
I
2.8
DDL
I
2.3
5.0
FLH
Threshold Input Current Low to High
Threshold Input Voltage High to Low
Under Voltage Lockout Threshold
V
FHL
IO = 0 mA, VO < 5 V
0.8
V
V
V
IF = 1 0mA, VO > 5 V
IF = 10 mA, VO < 5 V
11
12.7
11.2
1.5
14
V
V
V
UVLO+
9.7
12.7
UVLO–
UVLOHYS
Under Voltage Lockout Threshold Hys-
teresis
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
7. Maximum pulse width = 10 ms, maximum duty cycle = 0.2 %.
Table 8. SWITCHING CHARACTERISTICS
Apply over all recommended conditions, typical value is measured at V = 30 V, V = Ground, T = 25°C unless otherwise specified.
DD
SS
A
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Units
100
275
500
ns
tPHL
IF = 7 mA to 16 mA,
Propagation Delay Time to Logic Low Output
Rg = 20 W, Cg = 10 nF,
f = 10 kHz, Duty Cycle = 50 %
100
255
20
500
ns
tPLH
Propagation Delay Time to Logic High Output
Pulse Width Distortion, | tPHL – tPLH |
PWD
300
350
ns
ns
PDD
−350
Propagation Delay Difference Between Any
(8)
(Skew)
Two Parts or Channels, (t
– t
PLH
)
PHL
tr
tf
Output Rise Time (10% – 90%)
Output Fall Time (90% – 10%)
UVLO Turn On Delay
60
60
ns
ns
IF = 10 mA , VO > 5 V
IF = 10 mA , VO < 5 V
1.6
0.4
50
ms
t
UVLO ON
UVLO Turn Off Delay
ms
t
UVLO OFF
| CMH |
TA = 25°C, VDD = 30 V,
IF = 7 to 16 mA, VCM = 2000 V (9)
20
20
kV/ms
Common Mode Transient Immunity at Output
High
| CML |
TA = 25°C, VDD = 30 V, VF = 0 V,
50
kV/ms
Common Mode Transient Immunity at Output
Low
V
CM = 2000 V (10)
8. The difference between tPHL and tPLH between any two FOD3150 parts under same test conditions.
9. Common mode transient immunity at output high is the maximum tolerable negative dVcm/dt on the trailing edge of the common mode
impulse signal, Vcm, to assure that the output will remain high (i.e., VO > 15.0 V).
10.Common mode transient immunity at output low is the maximum tolerable positive dVcm/dt on the leading edge of the common pulse signal,
Vcm, to assure that the output will remain low (i.e., VO < 1.0 V).
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FOD3150
TYPICAL PERFORMANCE CURVES
0.5
0.0
0.00
Frequency = 250 Hz
Duty Cycle = 0.1%
VDD
= 15 V to 30 V
IF = 7 to 16 mA
DD =15 to 30 V
VSS = 0 V
V
SS = 0 V
V
−0.05
−0.10
−0.15
−0.20
−0.25
−0.30
IF = 7 mA to 16 mA
IO = −100 mA
−0.5
−1.0
−1.5
−2.0
TA =−40_C
TA =25_C
T
A =100 _ C
0.00
0.25
0.50
0.75
1.00
1.25
1.50
IOH − OUTPUT HIGH CURRENT (A)
−40
−20
0
20
40
60
80
100
TA −AMBIENT TEMPERATURE (_C)
Figure 1. Output High Voltage Drop vs. Output High
Current
Figure 2. Output High Voltage Drop vs. Ambient
Temperature
0.25
2.0
Frequency = 250 Hz
Duty Cycle = 99.9%
VF(OFF) = −3.0 V to 0.8 V
VDD = 15 V to 30 V
VDD = 15 V to 30 V
V
SS = 0 V
= −3 V to 0.8 V
TA = 100_C
VF(OFF)
IO = 100 mA
0.20
0.15
0.10
0.05
0.00
VSS = 0 V
1.5
TA =25 _C
1.0
TA =−40 _C
0.5
0.0
0.00
0.25
0.50
0.75
1.00
1.25
1.50
−40
−20
0
20
40
60
80
100
IOL −OUTPUT LOW CURRENT (A)
TA −AMBIENT TEMPERATURE (_C)
Figure 4. Output Low Voltage vs. Ambient
Temperature
Figure 3. Output Low Voltage vs. Output Low Current
3.6
3.6
VDD = 30 V
IF = 10 mA (for IDDH
)
V
SS = 0 V
F = 0 mA (for IDDL
IF = 10 mA (for IDDH
I
V
F = 0 mA (for I DDL
SS =0, TA = 25_C
)
3.4
3.2
3.0
2.8
2.6
2.4
2.2
I
)
)
3.2
2.8
2.4
2.0
IDDH
IDDH
IDDL
IDDL
−40
−20
0
20
04
60
80
100
15
20
25
30
TA −AMBIENT TEM
PERATURE(_C)
VDD −SUPPLY VOLTAGE (V)
Figure 5. Supply Current vs. Ambient Temperature
Figure 6. Supply Current vs. Supply Voltage
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FOD3150
400
350
300
250
200
150
100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
IF = 10 mA
VDD = 15 V to 30 V
VSS = 0 V
Output = Open
T
A = 25_C
Rg=20 W ,Cg = 10 nF
DUTYCYCLE = 50%
f = 10 kHz
tPHL
tPLH
15
18
21
24
27
30
−40
−20
0
20
40
60
80
100
VDD –SUPPLY VOLTAGE (V)
TA −AMBIENT TEMPERATURE (_C)
Figure 8. Propagation Delay vs. Supply Voltage
Figure 7. Low to High Input Current Threshold vs.
Ambient Temperature
500
500
IF = 10 mA
VDD = 30 V, VSS = 0 V
VDD = 30 V, VSS = 0 V
Rg =20 ,Cg= 10 nF
W
TA = 25_C
Rg= 20 , Cg = 10 nF
W
DUTY CYCLE = 50%
f = 10 kHz
DUTY CYCLE = 50%
f = 10 kHz
400
300
200
100
400
300
200
100
tPHL
tPHL
tPLH
tPLH
6
8
1 0
12
14
16
−40
−20
0
20
40
60
80
100
IF –FORWARD LED CURRENT (mA)
TA –AMBIENT TEMPERATURE (_C)
Figure 10. Propagation Delay vs. Ambient
Temperature
Figure 9. Propagation Delay vs. LED Forward Current
500
500
IF = 10 mA
IF = 10 mA
VDD = 30 V, VSS = 0 V
VDD = 30 V, VSS = 0 V
Cg = 10 nF
Rg= 20
W
TA = 25_C
TA = 25_C
400 DUTY CYCLE = 50%
f = 10 kHz
400 DUTY CYCLE = 50%
f = 10 kHz
300
300
200
100
tPHL
tPLH
tPHL
tPLH
200
100
01
0
203
04
05
0
0
20
40
60
80
100
Cg −LOAD CAPACITANCE (nF)
Rg −SERIES LOAD RESISTANCE(W)
Figure 11. Propagation Delay vs. Series Load
Resistance
Figure 12. Propagation Delay vs. Load Capacitance
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FOD3150
35
30
25
20
15
10
5
100
10
T
A = 25_C
V
DD = 30 V
TA = 100 _C
1
TA =−40_C
0.1
TA =25_C
0.01
0.001
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VF −FORWARD VOLTAGE (V)
0
0
1
2
3
4
5
IF –FORWARD LED CURRENT (mA)
Figure 14. Input Forward Current vs. Forward Voltage
Figure 13. Transfer Characteristics
14
(12.75,12.80)
12
(11.25,11.30)
10
8
6
4
2
(11.20,0. 00)
10
(12. 70,0.00)
15
0
0
5
20
(VDD −VSS)–SUPPLY VOLTAGE (V)
Figure 15. Under Voltage Lockout
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FOD3150
TEST CIRCUIT
Power Supply
+
V
= 15 V to 30 V
DD
+
C2
47 mF
C1
0.1 mF
Pulse Generator
1
2
3
4
8
7
6
PW = 4.99 ms
Period = 5 ms
Pulse−In
R
= 50 ꢀ
OUT
Iol
R2
100 ꢀ
Power Supply
V = 4 V
+
+
C4
47 mF
C3
0.1 mF
D1
VOL
LED−IFmon
5
R1
100 ꢀ
To Scope
Test Conditions:
Frequency = 200 Hz
Duty Cycle = 99.8 %
V
V
V
= 15 V to 30 V
DD
SS = 0 V
= −3.0 V to 0.8 V
F(OFF)
Figure 16. IOL Test Circuit
Power Supply
+
V
= 15 V to 30 V
+
DD
C2
47 mF
C1
0.1 mF
Pulse Generator
1
8
7
PW = 10 ms
Period = 5 ms
Pulse−In
R
= 50 ꢀ
OUT
+
–
2
3
4
Power Supply
V = 4 V
+
C4
47 mF
C3
0.1 mF
Ioh
R2
100 ꢀ
6
D1
VOH
LED−IFmon
Current
Probe
5
To Scope
R1
100 ꢀ
Test Conditions:
Frequency = 200 Hz
Duty Cycle = 0.2 %
= 15 V to 30 V
= 0 V
V
V
DD
SS
I
= 7 mA to 16 mA
F
Figure 17. IOH Test Circuit
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FOD3150
1
2
3
4
8
7
6
5
0.1 mF
+
–
V
= 15 to 30 V
= 15 to 30 V
= 30 V
I
= 7 to 16 mA
DD
F
V
O
100 mA
Figure 18. VOH Test Circuit
1
2
3
4
8
7
100 mA
+
–
0.1 mF
V
DD
V
6
5
O
Figure 19. VOL Test Circuit
1
2
3
4
8
7
6
5
0.1 mF
+
–
V
I
= 7 to 16 mA
DD
F
V
O
Figure 20. IDDH Test Circuit
1
2
3
4
8
7
6
5
0.1 mF
+
–
+
–
V
= 30 V
V
= 0 to 0.8 V
DD
F
V
O
Figure 21. IDDL Test Circuit
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FOD3150
1
2
3
4
8
7
6
5
0.1 mF
+
–
V
= 15 to 30 V
DD
IF
V
> 5 V
O
Figure 22. IFLH Test Circuit
1
2
3
4
8
7
6
5
0.1 mF
+
–
+
–
V
= 15 to 30 V
V
= 0 to 0.8 V
DD
F
V
O
Figure 23. VFHL Test Circuit
1
2
3
4
8
0.1 mF
7
6
5
+
–
15 V or 30 V
Ramp
I
= 10 mA
F
V
DD
V
= 5 V
O
Figure 24. UVLO Test Circuit
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FOD3150
1
2
3
4
8
7
6
5
0.1 mF
V
O
+
–
V
= 15 to 30 V
DD
+
–
Rg = 20 W
Probe
50 W
F = 10 kHz
DC = 50 %
Cg = 10 nF
I
F
t
t
f
r
90 %
50 %
10 %
V
OUT
t
t
PHL
PLH
Figure 25. tPHL, tPLH, tR and tF Test Circuit and Waveforms
1
2
3
4
8
7
6
5
I
F
A
B
0.1 mF
+
–
V
= 30V
DD
+
–
V
5 V
O
+ –
V
= 2,000 V
CM
V
CM
0V
V
Dt
V
O
O
OH
Switch at A: I = 10 mA
F
V
V
OL
Switch at B: I = 0 mA
F
Figure 26. CMR Test Circuit and Waveforms
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FOD3150
REFLOW PROFILE
245°C, 10–30 s
300
250
200
150
100
50
260°C peak
Time above 183°C, <160 sec
Ramp up = 2–100°C/sec
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Time (Minute)
Notes:
• Peak reflow temperature: 260°C (package surface temperature)
• Time of temperature higher than 183°C for 160 seconds or less
• One time soldering reflow is recommended
Figure 27. Reflow Profile
ORDERING INFORMATION
Part Number
FOD3150
†
Package
Shipping
DIP 8−Pin
50 / Tube
50 / Tube
FOD3150S
SMT 8−Pin (Lead Bend)
FOD3150SD
SMT 8−Pin (Lead Bend)
1,000 / Tape & Reel
50 / Tube
FOD3150V
DIP 8−Pin, IEC60747−5−5 option
FOD3150SV
SMT 8−Pin (Lead Bend), IEC60747−5−5 option
SMT 8−Pin (Lead Bend), IEC60747−5−5 option
DIP 8−Pin, 0.4” Lead Spacing, IEC60747−5−5 option
SMT 8−Pin, 0.4” Lead Spacing, IEC60747−5−5 option
SMT 8−Pin, 0.4” Lead Spacing, IEC60747−5−5 option
50 / Tube
FOD3150SDV
FOD3150TV
1,000 / Tape & Reel
50 / Tube
FOD3150TSV
FOD3150TSR2V
50 / Tube
700 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D
MARKING INFORMATION
Definitions
1
1
2
3
ON Semiconductor logo
Device number
ON
2
6
3150
V XX YY B
IEC60747−5−5 Option (only appears on component
ordered with this option)
4
5
6
Two digit year code, e.g., ‘18’
Two digit work week ranging from ‘01’ to ‘53’
Assembly package code
5
3
4
Figure 28. Device Marking
www.onsemi.com
12
FOD3150
CARRIER TAPE SPECIFICATIONS
D0
P0
P2
t
E
K0
F
W
W1
P
UserDirectionofFeed
d
D1
Figure 29. Carrier Tape Specifications
Symbol
Description
Dimension in mm
16.0 0.3
0.30 0.05
4.0 0.1
W
t
Tape Width
Tape Thickness
P0
D0
E
Sprocket Hole Pitch
Sprocket Hole Diameter
Sprocket Hole Location
Pocket Location
1.55 0.05
1.75 0.10
7.5 0.1
F
P2
P
2.0 0.1
Pocket Pitch
12.0 0.1
10.30 0.20
10.30 0.20
4.90 0.20
13.2 0.2
0.1 max
A0
B0
K0
W1
d
Pocket Dimensions
Cover Tape Width
Cover Tape Thickness
Max. Component Rotation or Tilt
Min. Bending Radius
10°
R
30
OPTOPLANAR is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
www.onsemi.com
13
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP8 6.6x3.81, 2.54P
CASE 646BW
ISSUE O
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13445G
PDIP8 6.6X3.81, 2.54P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP8 9.655x6.6, 2.54P
CASE 646CQ
ISSUE O
DATE 18 SEP 2017
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13446G
PDIP8 9.655X6.6, 2.54P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP8 GW
CASE 709AC
ISSUE O
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13447G
PDIP8 GW
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP8 GW
CASE 709AD
ISSUE O
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13448G
PDIP8 GW
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
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