FOD3182S [ONSEMI]
3 A 输出电流，高速 MOSFET 门极驱动器光耦合器;
| 型号： | FOD3182S |
| 厂家： | 
ONSEMI |
| 描述： | 3 A 输出电流，高速 MOSFET 门极驱动器光耦合器 驱动 输出元件 光电 驱动器 |
| 文件： | 总21页 (文件大小：447K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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3 A Output Current, High
Speed MOSFET Gate Driver
Optocoupler
PDIP8 6.6x3.81, 2.54P
CASE 646BW
8
1
PDIP8 9.655x6.61, 2.54P
CASE 646CQ
FOD3182
8
8
1
1
1
Description
The FOD3182 is a 3 A Output Current, High Speed MOSFET Gate
Drive Optocoupler. It consists of a aluminium gallium arsenide
(AlGaAs) light emitting diode optically coupled to a CMOS detector
with PMOS and NMOS output power transistors integrated circuit
power stage. It is ideally suited for high frequency driving of power
MOSFETS used in Plasma Display Panels (PDPs), motor control
inverter applications and high performance DC/DC converters.
The device is packaged in an 8−pin dual in−line housing compatible
with 260°C reflow processes for lead free solder compliance.
PDIP8 GW
CASE 709AC
PDIP8 GW
CASE 709AD
8
MARKING DIAGRAM
Features
• High Noise Immunity Characterized by 50 kV/ms (Typ.) Common
ON
3182
Mode Rejection @ V = 2,000 V
CM
VXXYYB
• Guaranteed Operating Temperature Range of −40°C to +100°C
• 3 A Peak Output Current
3182 = Device Number
= VDE Mark (Note: Only appears on parts
ordered with DIN EN/IEC 60747−5−2 option − See
V
• Fast Switching Speed
♦ 210 ns Max. Propagation Delay
♦ 65 ns Max. Pulse Width Distortion
• Fast Output Rise/Fall Time
ordering table)
XX
YY
B
= Two Digit Year Code, e.g., “11”
= Digit Work Week Ranging from “01” to “53”
= Assembly Package Code
• Offers Lower Dynamic Power Dissipation
• 250 kHz Maximum Switching Speed
• Wide V
perating Range: 10 V to 30 V
DD O
• Use of P−Channel MOSFETs at Output Stage Enables Output
Voltage Swing Close to the Supply Rail (Rail−to−Rail Output)
• 5000 Vrms, 1 Minute Isolation
FUNCTIONAL BLOCK DIAGRAM
1
2
3
4
8
7
6
5
NC
ANODE
CATHODE
NC
VDD
VO2
VO1
VSS
• Under Voltage Lockout Protection (UVLO) with Hysteresis –
Optimized for Driving MOSFETs
• Minimum Creepage Distance of 8.0 mm
• Minimum Clearance Distance of 10 mm to 16 mm (Option TV or
TSV)
• Minimum Insulation Thickness of 0.5 mm
• UL and VDE*
• 1,414 Peak Working Insulation Voltage (V
)
IORM
NOTE: A 0.1 mF bypass capacitor must be
*Requires “V” Ordering Option
connected between pins 5 and 8.
Applications
• Plasma Display Panel
• High Performance DC/DC Convertor
ORDERING INFORMATION
See detailed ordering and shipping information on page 16 of
this data sheet.
• High Performance Switch Mode Power Supply
• High Performance Uninterruptible Power Supply
• Isolated Power MOSFET Gate Drive
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
September, 2021 − Rev. 2
FOD3182/D
FOD3182
TRUTH TABLE
LED
Off
V
DD
– V “Positive Going” (Turn−on)
V
DD
– V “Negative Going” (Turn−off)
V
O
SS
SS
0 V to 30 V
0 V to 7.4 V
7.4 V to 9 V
9 V to 30 V
0 V to 30 V
0 V to 7 V
Low
Low
On
On
On
7 V to 8.5 V
8.5 V to 30 V
Transition
High
PIN DEFINITIONS
Pin No.
Name
NC
Description
1
2
Not Connected
LED Anode
Anode
3
4
5
6
7
8
Cathode
NC
LED Cathode
Not Connected
Negative Supply Voltage
V
SS
V
O2
V
O1
DD
Output Voltage 2 (internally connected to V
)
O1
Output Voltage 1
V
Positive Supply Voltage
SAFETY AND INSULATION RATINGS (As per DIN EN/IEC 60747−5−2. This optocoupler is suitable for “safe electrical insulation”
only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.)
Symbol
Parameter
Min.
Typ.
Max.
Unit
Installation Classifications per DIN VDE 0110/1.89 Table 1
For Rated Mains Voltage < 150 Vrms
−
−
I–IV
For Rated Mains Voltage < 300 Vrms
For Rated Mains Voltage < 450 Vrms
For Rated Mains Voltage < 600 Vrms
For Rated Mains Voltage < 1000 Vrms (Option T, TS)
Climatic Classification
−
−
I–IV
−
−
−
−
−
−
−
−
I–III
−
I–III
−
I–III
−
40/100/21
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
−
2
−
−
CTI
175
2651
V
PR
Input to Output Test Voltage, Method b,
V
x 1.875 = V , 100% Production Test with tm = 1 second,
IORM
PR
Partial Discharge < 5 pC
Input to Output Test Voltage, Method a,
2121
−
−
V
x 1.5 = V , Type and Sample Test with tm = 60 seconds,
IORM
PR
Partial Discharge < 5 pC
V
Max Working Insulation Voltage
Highest Allowable Over Voltage
External Creepage
1,414
6000
8
−
−
−
−
−
−
−
−
−
−
−
−
V
IORM
peak
V
V
peak
IOTM
mm
mm
mm
mm
External Clearance
7.4
External Clearance (for Option T or TS − 0.4” Lead Spacing)
Insulation Thickness
10.16
0.5
Safety Limit Values – Maximum Values Allowed in the Event of a Failure
Case Temperature
T
150
25
−
−
−
−
−
−
−
−
°C
mA
mW
W
Case
I
Input Current
S,INPUT
P
Output Power (Duty Factor ≤ 2.7%)
250
S,OUTPUT
9
R
Insulation Resistance at T , V = 500 V
10
IO
S
IO
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2
FOD3182
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)
A
Symbol
Parameter
Value
Unit
°C
°C
°C
°C
mA
ns
V
T
Storage Temperature
Operating Temperature
Junction Temperature
−40 to +125
STG
OPR
T
−40 to +100
T
J
−40 to +125
T
SOL
Lead Solder Temperature – Wave Solder (Refer to Reflow Temperature Profile, page 15)
Average Input Current (Note 1)
260 for 10 seconds
I
25
F(AVG)
I
LED Current Minimum Rate of Rise/Fall
Reverse Input Voltage
250
F(tr, tf)
V
R
5
I
“High” Peak Output Current (Note 2)
“Low” Peak Output Current (Note 2)
Supply Voltage
3
3
A
OH(PEAK)
I
A
OL(PEAK)
V
– V
−0.5 to 35
V
DD
SS
V
Output Voltage
0 to V
V
O(PEAK)
DD
P
P
Output Power Dissipation (Note 3)
Total Power Dissipation (Note 4)
250
295
mW
mW
O
D
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Derate linearly above +79°C free air temperature at a rate of 0.37mA/°C.
2. Maximum pulse width = 10 ms, maximum duty cycle = 11%.
3. Derate linearly above +79°C, free air temperature at the rate of 5.73 mW/°C.
4. No derating required across operating temperature range.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Value
10 to 30
10 to 16
−3.0 to 0.8
Unit
V
V
DD
– V
Power Supply
SS
I
Input Current (ON)
Input Voltage (OFF)
mA
V
F(ON)
V
F(OFF)
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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3
FOD3182
ELECTRICAL−OPTICAL CHARACTERISTICS (DC) (Apply over all recommended conditions, typical value is measured at
V
DD
= 30 V, V = 0 V, T = 25°C, unless otherwise specified.)
SS A
Symbol
Parameter
Test Conditions
= (V – V – 1 V)
Min
0.5
2.5
0.5
2.5
Typ
0.9
−
Max
−
Unit
I
High Level Output Current
V
OH
V
OH
V
OL
V
OL
A
OH
DD
SS
= (V – V – 6 V)
−
DD
SS
I
OL
Low Level Output Current
= (V – V + 1 V)
1
−
A
DD
SS
= (V – V + 6 V)
−
−
DD
SS
V
High Level Output Voltage (Note 5, 6)
Low Level Output Voltage (Note 5, 6)
High Level Supply Current
I
I
= −100 mA
V – 0.5
DD
−
−
V
V
OH
O
O
V
= 100 mA
−
−
−
V
SS
+ 0.5
OL
I
Output Open, I = 10 to 16 mA
2.6
2.5
3.0
−
4.0
4.0
7.5
−
mA
mA
mA
V
DDH
F
I
Low Level Supply Current
Output Open, V = −3.0 to 0.8 V
−
DDL
F
I
Threshold Input Current Low to High
Threshold Input Voltage High to Low
Input Forward Voltage
I
O
I
O
= 0 mA, V > 5 V
−
FLH
O
V
FHL
= 0 mA, V < 5 V
0.8
1.1
−
O
V
I = 10 mA
F
1.43
−1.5
8.3
7.7
0.6
−
1.8
−
V
F
DV / T
Temperature Coefficient of Forward Voltage
UVLO Threshold
I = 10 mA
F
mV/°C
V
F
A
V
V
> 5V, I = 10 mA
7
9
UVLO+
UVLO–
O
O
F
V
V
< 5V, I = 10 mA
6.5
−
8.5
−
V
F
UVLO
BV
UVLO Hysteresis
V
HYST
Input Reverse Breakdown Voltage
Input Capacitance
I
R
= 10 mA
5
−
V
R
C
f = 1 MHz, V = 0 V
−
25
−
pF
IN
F
5. In this test, VOH is measured with a dc load current of 100 mA. When driving capacitive load VOH will approach VDD as IOH approaches zero
amps.
6. Maximum pulse width = 1 ms, maximum duty cycle = 20%.
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4
FOD3182
SWITCHING CHARACTERISTICS (Apply over all recommended conditions, typical value is measured at V = 30 V, V = 0 V,
DD
SS
T = 25°C, unless otherwise specified.)
A
Symbol
Parameter
Test Conditions
Min
50
Typ
120
145
35
Max
Unit
ns
t
t
Propagation Delay Time to High Output Level (Note 7)
Propagation Delay Time to Low Output Level (Note 7)
Pulse Width Distortion (Note 8)
I = 10 mA, R = 10 W,
210
210
65
PLH
PHL
F
g
f = 250 kHz,
50
ns
Duty Cycle = 50%,
C = 10 nF
g
P
WD
−
ns
P
PHL
Propagation Delay Difference Between Any Two Parts
(Note 9)
−90
−
90
ns
DD
PLH
(t
– t
)
t
Rise Time
C = 10 nF, R = 10 W
−
−
38
24
−
−
−
−
−
ns
ns
r
L
g
t
Fall Time
f
t
UVLO Turn On Delay
UVLO Turn Off Delay
−
2.0
0.3
50
ms
UVLO ON
t
−
ms
UVLO OFF
| CM
|
Output High Level Common Mode Transient Immunity
(Note 10, 11)
T = +25°C, I = 7 mA to
35
kV/ms
H
A
f
16 mA, V = 2 kV,
CM
= 30 V
V
DD
| CM |
Output Low Level Common Mode Transient Immunity
(Note 10, 12)
T = +25°C, V = 0 V,
CM
35
50
−
kV/ms
L
A
f
V
= 2 kV, V = 30 V
DD
7. t
propagation delay is measured from the 50% level on the falling edge of the input pulse to the 50% level of the falling edge of the V
O
PHL
signal. t
propagation delay is measured from the 50% level on the rising edge of the input pulse to the 50% level of the rising edge of the
PLH
V
signal.
O
8. PWD is defined as | t
– t
PHL
| for any given device.
PLH
PHL
PLH
9. The difference between t
and t
between any two FOD3182 parts under same operating conditions, with equal loads.
10.Pin 1 and 4 need to be connected to LED common.
11. Common mode transient immunity in the high state is the maximum tolerable dVCM/dt of the common mode pulse VCMto assure that the output
will remain in the high state (i.e. VO > 15 V).
12.Common mode transient immunity in a low state is the maximum tolerable dVCM/dt of the common mode pulse, VCM, to assure that the output
will remain in a low state (i.e. VO < 1.0 V).
INSULATION CHARACTERISTICS
Symbol
Parameter
Test Conditions
T = 25°C, R.H. < 50%,
Min
Typ*
Max
Unit
V
ISO
Withstand Isolation Voltage (Note 13, 14)
5000
−
−
V
rms
A
t = 1 minute, I
≤ 10 mA
I−O
11
R
C
Resistance (Input to Output) (Note 14)
Capacitance (Input to Output)
V
= 500 V
−
−
10
−
−
W
I−O
I−O
I−O
Freq. = 1 MHz
1
pF
*Typical values at T = 25°C
A
13.In accordance with UL 1577, each optocoupler is proof tested by applying an insulation test voltage > 6000 Vrms, 60 Hz for 1 second (leakage
detection current limit II−O < 10 mA).
14.Device considered a two−terminal device: pins on input side shorted together and pins on output side shorted together.
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5
FOD3182
TYPICAL PERFORMANCE CURVES
0.5
0
0.00
Frequency = 200 Hz
Duty Cycle = 0.1%
V
V
= 15 V to 30 V
= 0 V
DD
SS
−0.05
−0.10
−0.15
−0.20
−0.25
−0.30
I = 10 mA to 16 mA
I = 10 mA to 16 mA
F
F
V
DD
V
SS
= 15 V to 30 V
= 0 V
I = −100 mA
O
−0.5
−1.0
−1.5
−2.0
−2.5
−3.0
−3.5
T = −40°C
A
T = 25°C
A
T =100°C
A
0
0.5
1.0
1.5
2.0
2.5
−40 −20
0
20
40
60
80
100
I
, OUTPUT HIGH CURRENT (A)
T , AMBIENT TEMPERATURE (°C)
A
OH
Figure 1. Output High Voltage Drop vs. Output
High Current
Figure 2. Output High Voltage Drop vs. Ambient
Temperature
8
8
Frequency = 200 Hz
Frequency = 200 Hz
Duty Cycle = 0.2%
Duty Cycle = 0.5%
I = 10 mA to 16 mA
F
I = 10 mA to 16 mA
F
6
4
2
0
V
= 15 V to 30 V
6
4
2
0
V
= 15 V to 30 V
DD
DD
V
V
= 6 V
= 3 V
O
V
V
= 6 V
= 3 V
O
O
O
−40 −20
0
20
40
60
80
100
−40 −20
0
20
40
60
80
100
T , AMBIENT TEMPERATURE (°C)
A
T , AMBIENT TEMPERATURE (°C)
A
Figure 3. Output High Current vs. Ambient
Temperature
Figure 4. Output High Current vs. Ambient
Temperature
4
0.30
Frequency = 200 Hz
Duty Cycle = 99.9%
V
V
= 15 V to 30 V
= 0 V
DD
SS
0.25
0.20
0.15
0.10
0.05
0
V (off) = 0.8 V
V = −3 V to 0.8 V
I = 100 mA
O
F
F
3
2
1
0
V
DD
V
SS
= 15 V to 30 V
= 0 V
T =100°C
A
T = 25°C
A
T = −40°C
A
0
0.5
1.0
1.5
2.0
2.5
−40 −20
0
20
40
60
80
100
I
OL
, OUTPUT LOW CURRENT (A)
T , AMBIENT TEMPERATURE (°C)
A
Figure 5. Output Low Voltage vs. Output Low
Current
Figure 6. Output Low Voltage vs. Ambient
Temperature
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6
FOD3182
TYPICAL PERFORMANCE CURVES (Continued)
8
6
4
2
0
8
Frequency = 200 Hz
Duty Cycle = 99.8%
Frequency = 200 Hz
Duty Cycle = 99.5%
V = 0.8 V
V = 0.8 V
F
F
V
DD
= 15 V to 30 V
6
4
2
0
V
DD
= 15 V to 30 V
V
V
= 6 V
= 3 V
O
V
V
= 6 V
= 3 V
O
O
O
−40 −20
0
20
40
60
80
100
100
100
−40 −20
0
20
40
60
80
100
T , AMBIENT TEMPERATURE (°C)
A
T , AMBIENT TEMPERATURE (°C)
A
Figure 7. Output Low Current vs. Ambient
Figure 8. Output Low Current vs. Ambient
Temperature
Temperature
3.6
3.6
V
V
= 15 V to 30 V
= 0 V
I = 0 mA (for I
F DDL
)
DD
I = 10 mA (for I
)
SS
F
DDH
3.4
3.2
3.0
2.8
2.6
2.4
2.2
I = 0 mA (for I
)
V
SS
= 0 V
F
DDL
3.2
2.8
2.4
2.0
I = 10 mA (for I
)
T = 25°C
A
F
DDH
I
(30 V)
DDH
I
(30 V)
DDL
I
DDH
I
DDL
I
(15 V)
DDH
I
(15 V)
DDL
−40 −20
0
20
40
60
80
15
20
25
30
T , AMBIENT TEMPERATURE (°C)
A
V
DD
, SUPPLY VOLTAGE (V)
Figure 9. Supply Current vs. Ambient
Temperature
Figure 10. Supply Current vs. Supply Voltage
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
250
V
V
= 15 V to 30 V
= 0 V
I = 10 mA to 16 mA
DD
F
T = 25°C
SS
A
Output = Open
R
C
= 10 W
= 10 nF
G
200
150
100
50
G
Duty Cycle = 50%
Frequency = 250 kHz
t
t
PHL
PLH
−40 −20
0
20
40
60
80
15
18
21
, SUPPLY VOLTAGE (V)
DD
24
27
30
T , AMBIENT TEMPERATURE (°C)
A
V
Figure 11. Low−to High Input Current Threshold
Figure 12. Propagation Delay vs. Supply Voltage
vs. Ambient Temperature
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FOD3182
TYPICAL PERFORMANCE CURVES (Continued)
250
200
150
100
50
450
V
= 15 V to 30 V
I = 10 mA to 16 mA
F
DD
T = 25°C
V
R
C
= 15 V to 30 V
= 10 W
= 10 nF
A
DD
R
C
= 10 W
= 10 nF
G
G
G
350
250
150
50
G
Duty Cycle = 50%
Frequency = 250 kHz
Duty Cycle = 50%
Frequency = 250 kHz
t
t
PHL
PLH
t
t
PHL
PLH
6
8
10
12
14
18
−40 −20
0
20
40
60
80
100
I , FORWARD LED CURRENT (A)
F
T , AMBIENT TEMPERATURE (°C)
A
Figure 13. Propagation Delay vs. LED Forward
Figure 14. Propagation Delay vs. Ambient
Current
Temperature
450
450
I = 10 mA to 16 mA
F
I = 10 mA to 16 mA
F
V
C
= 15 V to 30 V
= 10 nF
V
R
= 15 V to 30 V
= 10 W
G
DD
DD
G
350
250
150
50
350
250
150
50
Duty Cycle = 50%
Frequency = 250 kHz
Duty Cycle = 50%
Frequency = 250 kHz
t
t
PHL
PHL
t
t
PLH
PLH
0
10
20
30
40
50
0
20
40
60
80
100
R , SERIES LOAD RESISTANCE (W)
G
C , SERIES LOAD CAPACITANCE (nF)
G
Figure 15. Propagation Delay vs. Series Load
Figure 16. Propagation Delay vs. Series Load
Resistance
Capacitance
35
100
V
DD
= 30 V
T = 25°C
A
30
25
20
15
10
5
10
1
0.1
T = 100°C 25°C
A
−40°C
0.01
0
0.001
0
1
2
3
4
5
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I , FORWARD LED CURRENT (mA)
F
V , FORWARE VOLTAGE (V)
R
Figure 17. Transfer Characteristics
Figure 18. Input Forward Current vs. Forward
Voltage
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FOD3182
TYPICAL PERFORMANCE CURVES (Continued)
20
18
16
14
12
10
8
6
4
2
0
0
5
10
15
20
(V − V ), SUPPLY VOLTAGE (V)
DD
SS
Figure 19. Under Voltage Lockout
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FOD3182
TEST CIRCUIT
Power Supply
= 10 V to 30 V
+
+
V
DD
C1
C2
0.1 mF
47 mF
Pulse Generator
1
2
3
4
8
7
PW = 4.99 ms
Period = 5 ms
Pulse−In
ROUT = 50 W
R2
100 W
Iol
Power Supply
V = 6 V
6
+
+
C3
0.1 mF
C4
47 mF
D1
VOL
LED−IFmon
5
R1
100 W
To Scope
Test Conditions:
Frequency = 200 Hz
Duty Cycle = 99.8%
V
DD
V
SS
= 10 V to 30 V
= 0 V
V (OFF) = −3.0 V to 0.8 V
F
Figure 20. IOL Test Circuit
Power Supply
+
+
C1
C2
V
DD
= 10 V to 30 V
0.1 mF
47 mF
Pulse Generator
1
2
3
4
8
7
PW = 10 ms
Period = 5 ms
Pulse−In
ROUT = 50 W
+
–
Power Supply
V = 6 V
+
C3
0.1 mF
C4
47 mF
Ioh
R2
100 W
6
5
D1
VOH
LED−IFmon
Current
Probe
To Scope
R1
100 W
Test Conditions:
Frequency = 200 Hz
Duty Cycle = 0.2%
V
DD
V
SS
= 10 V to 30 V
= 0 V
I
F
= 10 mA to 16 mA
Figure 21. IOH Test Circuit
www.onsemi.com
10
FOD3182
TEST CIRCUIT (Continued)
1
2
3
4
8
7
6
5
0.1 mF
+
–
V
DD
= 10 to 30 V
I = 10 to 16 mA
F
VO
100 mA
Figure 22. VOH Test Circuit
1
2
3
4
8
100 mA
7
+
0.1 mF
V
DD
= 10 to 30 V
–
VO
6
5
Figure 23. VOL Test Circuit
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11
FOD3182
TEST CIRCUIT (Continued)
1
2
3
4
8
7
6
5
0.1 mF
+
–
V
DD
= 30 V
I = 10 to 16 mA
F
VO
Figure 24. IDDH Test Circuit
1
2
3
4
8
7
6
5
0.1 mF
+
–
+
–
V
DD
= 30 V
V = −0.3 to 0.8 V
F
VO
Figure 25. IDDL Test Circuit
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12
FOD3182
TEST CIRCUIT (Continued)
1
2
3
4
8
7
6
5
0.1 mF
+
–
V
DD
= 10 to 30 V
IF
V
O > 5 V
Figure 26. IFLH Test Circuit
1
2
3
4
8
0.1 mF
7
6
5
+
–
+
–
V
DD
= 10 to 30 V
V = −0.3 to 0.8 V
F
VO
Figure 27. IFHL Test Circuit
1
8
0.1 mF
2
3
4
7
6
5
+
10 to 30 V
Ramp
I = 10 mA
F
–
V
DD
V
O = 5 V
Figure 28. UVLO Test Circuit
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13
FOD3182
TEST CIRCUIT (Continued)
1
2
3
4
8
0.1 mF
7
6
5
VO
+
–
V
DD
= 10 to 30 V
+
–
Rg = 10 W
Probe
50 W
F = 250 kHz
DC = 50%
Cg = 10 nF
IF
tr
tf
90%
50%
10%
VOUT
tPLH
tPHL
Figure 29. tPHL, tPLH, tr and tf Test Circuit and Waveforms
1
2
3
4
8
7
6
5
IF
A
B
0.1 mF
+
V
DD
= 30 V
–
+
VO
5 V
–
+ −
VCM = 2,000 V
VCM
0 V
Dt
VO
VO
VOH
Switch at A: IF = 10 mA
Switch at B: IF = 0 mA
VOL
Figure 30. CMR Test Circuit and Waveforms
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14
FOD3182
REFLOW PROFILE
Max. Ramp−up Rate = 3°C/S
Max. Ramp−down Rate = 6°C/S
TP
TL
260
240
tP
220
200
180
160
140
120
100
80
Tsmax
Tsmin
tL
Preheat Area
t s
60
40
20
0
120
240
360
Time 25°C to Peak
Time (seconds)
Figure 31. Reflow Profile
Table 1.
Profile Freature
Pb−Free Assembly Profile
150°C
Temperature Min. (Tsmin)
Temperature Max. (Tsmax)
Time (t ) from (Tsmin to Tsmax)
200°C
60–120 seconds
3°C/second max.
217°C
S
Ramp−up Rate (t to t )
L
P
Liquidous Temperature (T )
L
Time (t ) Maintained Above (T )
60–150 seconds
260°C +0°C / –5°C
30 seconds
L
L
Peak Body Package Temperature
Time (t ) within 5°C of 260°C
P
Ramp−down Rate (T to T )
6°C/second max.
8 minutes max.
P
L
Time 25°C to Peak Temperature
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15
FOD3182
ORDERING INFORMATION
Part Number
†
Package
Shipping
FOD3182
PDIP8 9.655x6.61, 2.54P
50 Units / Tube
50 Units / Tube
DIP 8−Pin
FOD3182S
PDIP8 GW
SMT 8−Pin (Lead Bend)
FOD3182SD
FOD3182V
PDIP8 GW
1,000 / Tape and Reel
50 Units / Tube
SMT 8−Pin (Lead Bend)
PDIP8 9.655x6.61, 2.54P
DIP 8−Pin, IEC60747−5−2 option
FOD3182SV
FOD3182SDV
FOD3182TV
FOD3182TSV
FOD3182TSR2
FOD3182TSR2V
PDIP8 GW
50 Units / Tube
SMT 8−Pin (Lead Bend), DIN EN/IEC 60747−5−2 option
PDIP8 GW
1,000 / Tape and Reel
50 Units / Tube
SMT 8−Pin (Lead Bend), DIN EN/IEC 60747−5−2 option
PDIP8 6.6x3.81, 2.54P
DIP 8−Pin, 0.4” Lead Spacing, DIN EN/IEC 60747−5−2 option
PDIP8 GW
50 Units / Tube
SMT 8−Pin, 0.4” Lead Spacing, DIN EN/IEC 60747−5−2 option
PDIP8 GW
SMT 8−Pin, 0.4” Lead Spacing
700 / Tape and Reel
700 / Tape and Reel
PDIP8 GW
SMT 8−Pin, 0.4” Lead Spacing, DIN EN/IEC 60747−5−2 option
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
16
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP8 6.6x3.81, 2.54P
CASE 646BW
ISSUE O
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13445G
PDIP8 6.6X3.81, 2.54P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP8 9.655x6.6, 2.54P
CASE 646CQ
ISSUE O
DATE 18 SEP 2017
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13446G
PDIP8 9.655X6.6, 2.54P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP8 GW
CASE 709AC
ISSUE O
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13447G
PDIP8 GW
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP8 GW
CASE 709AD
ISSUE O
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13448G
PDIP8 GW
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
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