FOD3184SV [ONSEMI]
3A 输出电流，高速 MOSFET/IGBT 门极驱动器光耦合器;
| 型号： | FOD3184SV |
| 厂家： | 
ONSEMI |
| 描述： | 3A 输出电流，高速 MOSFET/IGBT 门极驱动器光耦合器 驱动 双极性晶体管 光电 驱动器 |
| 文件： | 总26页 (文件大小：1913K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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2014 年2 月
FOD3184
3A 输出电流，高速MOSFET/IGBT
栅极驱动光耦合器
特性
■ 具有50 kV/µs （典型值）共模抑制特点的高抗噪能力
应用
■ 等离子显示屏
@ VCM = 2,000V
■ 高性能DC/DC 转换器
■ 高性能开关模式电源
■ 高性能不间断电源
■ 保证工作温度范围为-40°C 至+100°C
■ 中等功率MOSFET/IGBT 的3A 峰值输出电流
■ 快速开关速度
■ 隔离功率MOSFET/IGBT 栅极驱动
– 210 ns （最大值）传播延迟
– 65 ns max 脉宽失真度
■ 快速输出上升/ 下降时间
说明
– 提供较低的动态功耗
■ 250 kHZ 最大开关速度
■ 宽VDD 工作范围15 V 至30 V
■ 使用输出级的P沟道MOSFET可使输出电压摆幅接近供
电轨（轨到轨输出）
FOD3184 是具有 3A 输出电流，高速 MOSFET/IGBT 栅
极驱动光耦。它由铝砷化镓(AlGaAs) 发光二极管组成，该
二极管与具有PMOS 和NMOS 输出功率晶体管集成电路
功率级的CMOS感测器进行光耦合。非常适用于等离子显
示屏（PDPs），电动机用逆变器控制，以及高性能 DC/
DC 转换器中采用的高频功率驱动MOSFETS/IGBT。
■ 带滞回的欠压锁定保护(UVLO) - 优化用于驱动IGBT
■ 安全和法规认证
该器件封装在8 引脚双列直插式外壳内，兼容260°C 回流
焊接工艺，符合无铅焊接的规定。
– UL1577，5,000 VACRMS，1 分钟。
– DIN EN/IEC 60747-5-2，1,414 峰值工作绝缘电压
• 最小爬电距离为8.0 mm
• 最小绝缘厚度为8 mm 至16 mm
（选项TV 或TSV）
• 最小绝缘厚度为0.5 mm
功能框图
封装外形
1
2
3
4
8
7
NC
ANODE
CATHODE
NC
V
V
DD
8
8
O2
O1
SS
1
1
6 V
5 V
8
8
1
1
注意：
0.1 µF 旁路电容必须连接在引脚5 和8 之间。
©2005 飞兆半导体公司
FOD3184 版本1.0.4
www.fairchildsemi.com
真值表
LED
V
O
V
– V “ 正向” （导通）
V
– V “ 负向” （关断）
DD
SS
DD
SS
关
0V 至30 V
0V 至11.5 V
0V 至30 V
0V 至10 V
低
导通
导通
导通
低
转换
高
11.5 V 至13.5 V
13.5 V 至30 V
10 V 至12 V
12 V 至30 V
引脚定义
引脚号
名称
说明
1
2
3
4
5
6
7
8
NC
未连接
阳极
阴极
NC
LED 阳极
LED 阴极
未连接
VSS
VO2
VO1
VDD
负极电源电压
输出电压2 （内部连接至VO1
）
输出电压1
正向电源电压
©2005 飞兆半导体公司
FOD3184 版本1.0.4
www.fairchildsemi.com
2
安全性和绝缘标准
根据DIN EN/IEC 60747-5-2。此光电耦合器仅适用于安全极限数据之内的“ 安全电气绝缘”。通过保护性电路确保各项
安全标准达标。
符号
参数
安装标准符合DIN VDE 0110/1.89 表1
对于额定市电电压< 150 Vrms
对于额定市电电压< 300 Vrms
对于额定市电电压< 450 Vrms
对于额定市电电压< 600 Vrms
对于额定市电电压< 1000 Vrms （选项T、TS）
气候分类
最小值
典型值 最大值 单位
I–IV
I–IV
I–III
I–III
I–III
40/100/21
2
污染等级(DIN VDE 0110/1.89)
相比漏电起痕指数
CTI
VPR
175
2651
输入至输出测试电压，方法b，
VIORM x 1.875 = VPR，100% 生产测试测试
tm = 1 秒，局部放电< 5pC
2121
输入至输出测试电压，方法a，
VIORM x 1.5 = VPR，类型和样品测试，
tm = 60 s，局部放电< 5 pC
VIORM
VIOTM
1,414
6000
8
Vpeak
Vpeak
mm
最大工作绝缘电压
最高允许过电压
外部爬电距离
7.4
mm
外部绝缘间隙
10.16
0.5
mm
外部绝缘间隙（对于选项T 或TS - 0.4” 引线间距）
mm
绝缘厚度
安全极限值– 发生故障时允许的最大值
T 外壳
IS,INPUT
PS,OUTPUT
RIO
150
25
°C
mA
mW
壳体温度
输入电流
250
109
输出功率
TS, VIO = 500 V 时的绝缘阻抗
©2005 飞兆半导体公司
FOD3184 版本1.0.4
www.fairchildsemi.com
3
绝对最大额定值（除非另有规定，TA = 25°C）
应力超过绝对最大额定值，可能会损坏器件。在超出推荐的工作条件和应力的情况下，该器件可能无法正常工作，所以
不建议让器件在这些条件下工作。此外，过度暴露在高于推荐的工作条件的应力下，会影响器件的可靠性。绝对最大额
定值仅是应力规格值。
参数
符号
TSTG
TOPR
TJ
数值
单位
°C
存储温度
工作温度
结温
-40 至+125
-40 至+100
-40 至+125
260 for 10 sec.
°C
°C
TSOL
°C
引脚焊接温度– 波峰焊
（请参阅回流焊温度曲线，第22 页)
平均输入电流(1)
LED 电流上升/ 下降最小斜率
反向输入电压
IF(AVG)
IF(tr, tf)
25
250
5
mA
ns
V
VR
“ 高” 峰值输出电流(2)
“ 低” 峰值输出电流(2)
电源电压
IOH(PEAK)
IOL(PEAK)
VDD – VSS
VO(PEAK)
PO
3
A
3
A
V
-0.5 至35
0 至VDD
250
V
输出电压
输出功耗(3)
mW
mW
总功耗(3)
PD
295
推荐工作条件
推荐的操作条件表明确了器件的真实工作条件。指定推荐的工作条件，以确保器件的最佳性能达到数据表中的规格。
飞兆不建议超出额定或依照绝对最大额定值进行设计。
参数
符号
VDD – VSS
IF(ON)
数值
单位
V
电源
15 至30
10 至16
mA
V
输入电流(ON)
输入电压(OFF)
VF(OFF)
-3.0 至0.8
©2005 飞兆半导体公司
FOD3184 版本1.0.4
www.fairchildsemi.com
4
光电特性(DC)
应用于所有推荐的条件；除非另有规定，典型值测量条件为VDD = 30 V，VSS = 0 V，TA = 25°C。
符号
参数
高电平输出电流
测试条件
最小值 典型值 最大值 单位
IOH
VOH = (VDD – VSS – 1 V)
VOH = (VDD – VSS – 6 V)
VOL = (VDD – VSS + 1 V)
VOL = (VDD – VSS + 6 V)
-0.9
-0.5
-2.5
A
A
V
V
IOL
VOH
VOL
0.5
2.5
1
低电平输出电流
高级输出电压(4)(5)
低电平输出电压(4)(5)
IO = -100 mA，IF = 10 mA
IO = -2.5A，IF = 10 mA
IO = 100mA，IF = 0 mA
IO = 2.5A，IF = 0 mA
VDD – 0.5
VDD – 7
VSS + 0.5
VSS + 7
3.5
IDDH
IDDL
2.6
2.5
3.0
mA
mA
高电平电源电流
低电平电源电流
输出开路，
IF = 10 至16 mA
3.5
7.5
输出开，
VF = -3.0 至0.8 V
IFLH
VFHL
mA
阈值输入电流低电平至高电平
阈值输入电压高电平至低电平
输入正向电压
IO = 0 mA，VO > 5 V
IO = 0 mA，VO < 5 V
IF = 10 mA
0.8
1.1
V
VF
1.43
-1.5
13.0
11.5
1.5
1.8
V
mV/°C
V
VF / TA
VUVLO+
VUVLO–
UVLOHYST
BVR
IF = 10 mA
正向电压温度系数
11.5
10.0
13.5
12.0
欠压锁定阈值
VO > 5 V，IF = 10 mA
VO < 5 V，IF = 10 mA
V
V
UVLO 滞回
IR = 10 µA
5
V
反向击穿输入电压
输入电容
CIN
f = 1 MHz，VF = 0 V
25
pF
©2005 飞兆半导体公司
FOD3184 版本1.0.4
www.fairchildsemi.com
5
开关特性
应用于所有推荐的条件；除非另有规定，典型值测量条件为VDD = 30 V，VSS = 0 V，TA = 25°C。
典型值*
参数
符号
tPLH
tPHL
PWD
测试条件
最小值
50
最大值 单位
传播延迟时间到高输出电平(6)
传播延迟时间到低输出电平(6)
脉宽失真度(7)
IF = 10 mA，
Rg = 10 ，
f = 250 kHz，
占空比= 50%,
Cg = 10 nF
120
145
35
210
210
65
ns
ns
ns
ns
50
PDD
任何两个部件(8) 之间的传播延迟差
-90
90
(tPHL – tPLH
)
tr
tf
CL = 10 nF，
Rg = 10
38
24
ns
ns
上升时间
下降时间
tUVLO ON
UVLO 导通延迟
2.0
0.3
50
µs
tUVLO OFF UVLO 关断延迟
µs
| CMH
|
TA = +25°C，
If = 10 mA至16 mA，
35
35
kV/µs
输出高电平共模瞬态
抑制性(9) (10)
VCM = 2 kV，
VDD = 30 V
| CML |
TA = +25°C，
Vf = 0 V，
50
kV/µs
输出低电平共模瞬态
抑制性(9) (11)
V
CM = 2 kV，
VDD = 30 V
*TA = 25°C 时的典型值
绝缘特性
典型值*
参数
符号
测试条件
最小值
5000
最大值
单位
VISO
耐受绝缘电压(12) (13)
TA = 25°C，
Vrms
R.H. < 50%，t = 1 分钟，
II-O ≤ 10 µA
RI-O
CI-O
电阻（输入至输出）(13)
电容（输入至输出）
VI-O = 500 V
1011
1
频率= 1 MHz
pF
*TA = 25°C 时的典型值
©2005 飞兆半导体公司
FOD3184 版本1.0.4
www.fairchildsemi.com
6
注意：
1. 空气温度超过+79°C 时，线性降额的速度为0.37 mA/°C。
2. 最大脉冲宽度= 10 µs。
3
空气温度超过+79°C 时，线性降额的速度为5.73 mA/°C。
4. 在该测试中，VOH 采用dc 负载电流100 mA 测得。驱动电容负载时，随着IOH 接近零安培， VOH 将接近 VDD
5. 最大脉宽= 1 ms，最大占空比= 20%。
。
6.
tPHL传播延迟的测量是从50%的输入脉冲下降沿至50%的VO信号下降沿。tPLH 传播延迟的测量是从50%的输入脉冲
上升沿至50% 的VO 信号上升沿。
7. 对于任何给定器件，PWD 定义为| tPHL – tPLH |。
8. 在相同工作条件下（具有相同负载），任何两个FOD3184 部件间tPHL 和tPLH 间的差异。
9. 引脚1 和4 需要连接至LED 公共端。
10. 高电平状态下的共模瞬变抑制是共模脉冲VCM 的最大容许dVCM/dt，从而确保输出将保持高电平状态
（例如，VO > 15 V）。
11. 低电平状态下的共模瞬变抑制是共模脉冲VCM 的最大容许dVCM/dt，从而确保输出将保持低电平状态
（例如，VO < 1.0 V）。
12. 根据UL 1577，每个光电耦合器都通过应用绝缘测试电压> 1 秒钟的6000 Vrms、60 Hz
（泄露检测电流限制II-O < 10 µA）得到验证。
13. 器件属于两极器件：输入端引脚短接，输出端引脚短接。
©2005 飞兆半导体公司
FOD3184 版本1.0.4
www.fairchildsemi.com
7
典型性能曲线
Fig. 2 Output High Voltage Drop vs. Ambient Temperatur
Fig. 1 Output High Voltage Drop vs. Output High Current
0.00
0.5
V
V
= 15V to 30V
= 0V
DD
SS
Frequency = 200Hz
0
Duty Cycle = 0.1%
I
= 10mA to 16mA
= -100mA
-0.05
-0.10
-0.15
-0.20
-0.25
-0.30
F
I
= 10mA to 16mA
= 15V to 30V
SS
F
DD
I
O
V
V
-0.5
-1.0
-1.5
-2.0
-2.5
-3.-0
-3.5
= 0V
T
= -40°C
A
T
= 25°C
A
T
=100°C
A
-40
-20
0
20
40
60
80
100
0
0.5
1.0
1.5
2.0
2.5
TA – AMBIENT TEMPERATURE (°C)
IOH – OUTPUT HIGH CURRENT (A)
Fig. 3 Output High Current vs. Ambient Temperature
8
Fig. 4 Output High Current vs. Ambient Temperature
8
Frequency = 200Hz
Duty Cycle = 0.2%
Frequency = 100Hz
Duty Cycle = 0.5%
I
= 10mA to 16mA
= 15V to 30V
I
= 10mA to 16mA
V = 15V to 30V
DD
F
F
V
DD
6
4
2
0
6
4
2
0
V
= 6V
= 3V
V
V
= 6V
= 3V
O
O
V
O
O
-40
-20
0
20
40
60
80
100
-40
-20
0
20
40
60
80
100
TA – AMBIENT TEMPERATURE (°C)
TA – AMBIENT TEMPERATURE (°C)
Fig. 5 Output Low Voltage vs. Output High Current
Fig. 6 Output Low Voltage vs. Ambient Temperature
4
0.00
-0.05
-0.10
-0.15
-0.20
-0.25
-0.30
Frequency = 200Hz
Duty Cycle = 99.9%
V
V
V
I
= 15V to 30V
= 0V
DD
SS
F
V (off) = 0.8V
F
DD
SS
= -3V to 0.8V
= -100mA
V
V
= 15V to 30V
= 0V
O
3
2
1
0
T
=100°C
A
T
= 25°C
A
T
= -40°C
A
0
0.5
1.0
1.5
2.0
2.5
-40
-20
0
20
40
60
80
100
IOH – OUTPUT HIGH CURRENT (A)
TA – AMBIENT TEMPERATURE (°C)
©2005 飞兆半导体公司
FOD3184 版本1.0.4
www.fairchildsemi.com
8
典型性能曲线（续）
Fig. 7 Output Low Current vs. Ambient Temperature
8
Fig. 8 Output Low Current vs. Ambient Temperature
8
Frequency = 200Hz
Duty Cycle = 99.8%
Frequency = 100Hz
Duty Cycle = 99.5%
V
V
= 0.8V
V
= 0.8V
F
F
= 15V to 30V
V
= 15V to 30V
DD
DD
6
4
2
0
6
4
2
0
V
= 6V
= 3V
O
V
= 6V
= 3V
O
V
O
V
O
-40
-20
0
20
40
60
80
100
100
100
-40
-20
0
20
40
60
80
100
T
A – AMBIENT TEMPERATURE (°C)
TA – AMBIENT TEMPERATURE (°C)
Fig. 10 Supply Current vs. Supply Voltage
Fig. 9 Supply Current vs. Ambient Temperature
3.6
3.2
2.8
2.4
2.0
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
I
I
V
T
= 0mA (for I
)
F
F
SS
DDL
V
V
= 15V to 30V
= 0V
= 0mA (for I
= 10mA (for I
DD
SS
= 10mA (for I
= 0V
)
DDH
I
)
F
F
DDL
DDH
= 25°C
A
I
)
I
(30V)
DDH
I
DDH
I
(30V)
DDL
I
DDL
I
I
(15V)
DDH
(15V)
DDL
15
20
25
30
-40
-20
0
20
40
60
80
V
DD – SUPPLY VOLTAGE (V)
T
A – AMBIENT TEMPERATURE (°C)
Fig. 11 Low-to-High Input Current Threshold
vs. Ambient Temperature
Fig. 12 Propagation Delay vs. Supply Voltage
250
200
150
100
50
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
I
= 10mA to 16mA
= 25°C
F
V
V
= 15V to 30V
= 0V
Output = Open
DD
SS
T
A
G
G
R
C
= 10Ω
= 10nF
Duty Cycle = 50%
Frequency = 250kHz
t
t
PHL
PLH
15
18
21
24
27
30
-40
-20
0
20
40
60
80
V
DD – SUPPLY VOLTAGE (V)
TA – AMBIENT TEMPERATURE (°C)
©2005 飞兆半导体公司
FOD3184 版本1.0.4
www.fairchildsemi.com
9
典型性能曲线（续）
Fig. 13 Propagation Delay vs. LED Forward Current
Fig. 14 Propagation Delay vs. Ambient Temperature
250
450
V
T
= 15V to 30V
DD
I
= 10mA to 16mA
= 15V to 30V
F
DD
= 25°C
= 10Ω
= 10nF
A
V
R
C
R
C
G
G
= 10Ω
G
G
= 10nF
Duty Cycle = 50%
Frequency = 250kHz
200
150
100
50
350
250
150
50
Duty Cycle = 50%
Frequency = 250kHz
t
t
PHL
PLH
t
PHL
t
PLH
6
8
10
12
14
18
-40
-20
0
20
40
60
80
100
IF – FORWARD LED CURRENT (mA)
TA – AMBIENT TEMPERATURE (°C)
Fig. 15 Propagation Delay vs. Series Load Resistance
Fig. 16 Propagation Delay vs. Series Load Capacitance
450
450
I
= 10mA to 16mA
= 15V to 30V
G
I
= 10mA to 16mA
= 15V to 30V
G
F
DD
F
DD
V
R
V
C
= 10Ω
= 10nF
Duty Cycle = 50%
Duty Cycle = 50%
Frequency = 250kHz
Frequency = 250kHz
350
250
150
50
350
250
150
50
t
t
PHL
PHL
t
PLH
t
PLH
0
10
20
30
40
50
0
20
40
60
80
100
R
G – SERIES LOAD RESISTANCE (Ω)
CG – SERIES LOAD CAPACITANCE (nF)
Fig. 17 Transfer Characteristics
Fig. 18 Input Forward Current vs. Forward Voltage
35
30
25
20
15
10
5
100
V
T
= 30V
DD
= 25°C
A
10
1
-40°C
T
=100°C
25°C
A
0.1
0.01
0
0.001
0
0.5
1.0
1.5
2.0
2.5
0.6
0.8
1.0
1.2
1.4
1.6
1.8
IF – FORWARD LED CURRENT (mA)
V
R – FORWARE VOLTAGE (V)
©2005 飞兆半导体公司
FOD3184 版本1.0.4
www.fairchildsemi.com
10
典型性能曲线（续）
Fig. 19 Under Voltage Lockout
20
18
16
14
12
10
8
(13.00V)
6
4
2
(11.40V)
0
0
5
10
15
20
(VDD – VSS
)
– SUPPLY VOLTAGE (V)
©2005 飞兆半导体公司
FOD3184 版本1.0.4
www.fairchildsemi.com
11
测试电路
Power Supply
= 15V to 30V
+
V
+
DD
C2
47µF
C1
0.1µF
Pulse Generator
1
2
3
4
8
7
6
5
PW = 4.99ms
Period = 5ms
Pulse-In
R
= 50Ω
OUT
Iol
R2
100Ω
Power Supply
V = 6V
+
+
C4
47µF
C3
0.1µF
D1
VOL
LED-IFmon
R1
100Ω
To Scope
Test Conditions:
Frequency = 200Hz
Duty Cycle = 99.8%
V
V
V
= 15V to 30V
= 0V
DD
SS
= -3.0V to 0.8V
F(OFF)
图 20. IOL 测试电路
Power Supply
+
V
= 15V to 30V
+
DD
C2
47µF
C1
0.1µF
Pulse Generator
1
8
7
6
PW = 10µs
Period = 5ms
Pulse-In
R
= 50Ω
OUT
+
–
2
3
4
Power Supply
V = 6V
+
C4
47µF
C3
0.1µF
Ioh
R2
100Ω
D1
VOH
LED-IFmon
Current
Probe
5
To Scope
R1
100Ω
Test Conditions:
Frequency = 200Hz
Duty Cycle = 0.2%
V
V
= 15V to 30V
= 0V
DD
SS
I
= 10mA to 16mA
F
图 21. IOH 测试电路
©2005 飞兆半导体公司
FOD3184 版本 1.0.4
www.fairchildsemi.com
12
测试电路 （续）
1
2
3
4
8
7
6
5
0.1µF
+
–
V
= 15 to 30V
I
= 10 to 16mA
DD
F
V
O
100mA
图 22. VOH 测试电路
1
2
3
4
8
7
6
5
100mA
0.1µF
+
–
V
= 15 to 30V
DD
V
O
图 23. VOL 测试电路
©2005 飞兆半导体公司
FOD3184 版本 1.0.4
www.fairchildsemi.com
13
测试电路（续）
1
2
3
4
8
7
0.1F
+
–
V
= 30V
I
= 10 to 16mA
DD
F
V
6
O
5
图24. IDDH 测试电路
1
2
3
4
8
7
6
5
0.1F
+
–
+
–
V
= 30V
V
= -3.0 to 0.8V
DD
F
V
O
图25. IDDL 测试电路
©2005 飞兆半导体公司
FOD3184 版本1.0.4
www.fairchildsemi.com
14
测试电路（续）
1
2
3
4
8
7
6
5
0.1F
+
–
V
= 15 to 30V
DD
IF
V
> 5V
O
图26. IFLH 测试电路
1
2
3
4
8
7
6
5
0.1F
+
–
+
–
V
= 15 to 30V
V
= –3.0 to 0.8V
DD
F
V
O
图27. IFHL 测试电路
1
2
3
4
8
7
6
5
0.1F
+
–
15V or 30V
Ramp
I
= 10mA
F
V
DD
V
= 5V
O
图28. UVLO 测试电路
©2005 飞兆半导体公司
FOD3184 版本1.0.4
www.fairchildsemi.com
15
测试电路（续）
1
2
3
4
8
7
6
5
0.1F
V
O
+
–
V
= 15 to 30V
DD
+
–
Rg = 10
Probe
50
F = 250kHz
DC = 50%
Cg = 10nF
I
F
t
t
f
r
90%
50%
10%
V
OUT
t
t
PHL
PLH
图29. tPHL、tPLH、tr 和tf 测试电路和波形
1
2
3
4
8
7
6
5
I
F
A
B
0.1F
+
–
V
= 30V
DD
+
–
V
5V
O
+ –
V
= 2,000V
CM
V
CM
0V
V
Dt
V
O
OH
Switch at A: I = 10mA
F
V
O
V
OL
Switch at B: I = 0mA
F
图30. CMR 测试电路与波形
©2005 飞兆半导体公司
FOD3184 版本1.0.4
www.fairchildsemi.com
16
订购信息
器件编号
FOD3184
封装
包装方法
DIP 8 引脚
管装 （每管 50 个）
FOD3184S
SMT 8 引脚 （弯曲引线）
SMT 8 引脚 （弯曲引线）
管装 （每管 50 个）
FOD3184SD
FOD3184V
编卷带包装 （每卷 1000 单位）
管装 （每管 50 个）
DIP 8 引脚、 DIN EN/IEC 60747-5-2 选项
FOD3184SV
FOD3184SDV
FOD3184TV
FOD3184TSV
FOD3184TSR2V
SMT 8 引脚 （弯曲引线）、 DIN EN/IEC 60747-5-2 选项
SMT 8 引脚 （弯曲引线）、 DIN EN/IEC 60747-5-2 选项
DIP 8 引脚、 0.4” 引线间距、 DIN EN/IEC 60747-5-2 选项
SMT 8 引脚、 0.4” 引线间距、 DIN EN/IEC 60747-5-2 选项
SMT 8 引脚、 0.4” 引线间距、 DIN EN/IEC 60747-5-2 选项
管装 （每管 50 个）
编卷带包装 （每卷 1000 单位）
管装 （每管 50 个）
管装 （每管 50 个）
卷带和卷盘 （每卷 700 装）
标识信息
1
2
6
3184
V XX YY B
5
3
4
定义
1
2
3
飞兆徽标
器件号
VDE 标记 （注：仅订购 DIN EN/IEC 60747-5-2 选项的器
件才显示 – 见订单条目表）
4
5
6
两位数年份代码，如 “11”
两位数，代表工作周从 “01” 到 “53”
装配封装码
©2005 飞兆半导体公司
FOD3184 版本 1.0.4
www.fairchildsemi.com
17
承载带规格– 选项S
D0
P0
P2
t
E
K0
F
W
W1
P
User Direction of Feed
d
D1
符号
W
t
说明
单位mm
16.0 ± 0.3
带宽
0.30 ± 0.05
4.0 ± 0.1
带厚
P0
D0
E
孔距
1.55 ± 0.05
1.75 ± 0.10
7.5 ± 0.1
孔径
孔位置
Pocket 位置
F
P2
P
2.0 ± 0.1
12.0 ± 0.1
10.30 ±0.20
10.30 ±0.20
4.90 ±0.20
13.2 ± 0.2
0.1 （最大值）
10°
Pocket 间距
Pocket 尺寸
A0
B0
K0
W1
D
覆带宽
覆带厚
组件旋转或斜度最大值
最小弯曲半径
R
30
©2005 飞兆半导体公司
FOD3184 版本1.0.4
www.fairchildsemi.com
18
承载带规格– 选项TS
D0
P0
P2
t
E
K0
F
W
W1
P
User Direction of Feed
d
D1
符号
W
t
说明
单位mm
24.0 ± 0.3
0.40 ± 0.1
4.0 ± 0.1
带宽
带厚
P0
D0
E
孔距
1.55 ± 0.05
1.75 ± 0.10
11.5 ± 0.1
2.0 ± 0.1
16.0 ± 0.1
12.80 ± 0.1
10.35 ± 0.1
5.7 ±0.1
孔径
孔位置
Pocket 位置
F
P2
P
Pocket 间距
Pocket 尺寸
A0
B0
K0
W1
D
21.0 ± 0.1
0.1 （最大值）
10°
覆带宽
覆带厚
组件旋转或斜度最大值
最小弯曲半径
R
30
©2005 飞兆半导体公司
FOD3184 版本1.0.4
www.fairchildsemi.com
19
回流焊数据
Max. Ramp-up Rate = 3°C/S
T
Max. Ramp-down Rate = 6°C/S
P
260
240
220
200
180
160
140
120
100
80
t
P
T
L
Tsmax
t
L
Preheat Area
Tsmin
t
s
60
40
20
0
120
Time 25°C to Peak
240
360
Time (seconds)
特征
无铅装配数据
150°C
最低温度 （Tsmin）
最高温度 （Tsmax）
200°C
时间 (tS) 从 （Tsmin 至 Tsmax）
斜升率 （tL to tP）
60 至 120 秒
最高 3°C/ 秒
217°C
液态温度 (TL)
保持在 (tL) 以上的时间 (tL)
体封装温度峰值
60 至 150 秒
260°C +0°C / –5°C
时间 (tP)， 260°C 的 5°C 内
斜降率 (TP to TL)
30 秒
最高 6°C/ 秒
最多 8 分钟
25°C 至峰值温度的时间
©2005 飞兆半导体公司
FOD3184 版本 1.0.4
www.fairchildsemi.com
20
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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