FOD4108 [ONSEMI]

6引脚DIP 800V过零触发三端双向可控硅开关驱动器输出光电耦合器;
FOD4108
型号: FOD4108
厂家: ONSEMI    ONSEMI
描述:

6引脚DIP 800V过零触发三端双向可控硅开关驱动器输出光电耦合器

开关 驱动 三端双向交流开关 输出元件 光电 可控硅开关 驱动器
文件: 总16页 (文件大小:599K)
中文:  中文翻译
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6 2016  
FOD410FOD4108FOD4116FOD4118  
6 DIP 无缓冲过Triac 驱动器  
产品特性  
说明  
FOD410FOD4108FOD4116 FOD4118 器件包含  
一个红外线发光二极管,该二极管耦合至采用两个反向并  
SCR 形成的混合三端双向可控硅开关,形成能够驱动  
分立式三端双向可控硅开关的三端双向可控硅开关功能。  
FOD4116FOD4118采用一个高效红外线发光二极管提  
供增强的触发灵敏度。这些器件采用标6 引脚双列直插  
(DIP) 封装。  
300 mA 通态电流  
过零电压  
高阻断电压  
– 600 V (FOD410, FOD4116)  
– 800 V (FOD4108, FOD4118)  
高触发灵敏度  
– 1.3 mA (FOD4116FOD4118)  
– 2 mA (FOD410FOD4108)  
高静dv/dt (10,000V/µs)  
安全和法规认证:  
– UL1577, 5,000 VACRMS 1 分钟)  
– DIN-EN/IEC60747-5-5  
应用  
固态继电器  
工业控制  
照明控制  
静态功率开关  
AC 电机启动器  
功能示意图  
封装外形  
ANODE 1  
6 MAIN TERM.  
6
6
1
1
CATHODE  
N/C  
NC*  
2
3
5
4
6
MAIN TERM.  
1
Figure 2. Package Outlines  
*DO NOT CONNECT  
(TRIAC SUBSTRATE)  
Figure 1. Schematic  
©2014 飞兆半导体公司  
FOD410FOD4108FOD4116FOD4118 1.6.0  
www.fairchildsemi.com  
安全性和绝缘标准  
DIN EN/IEC 60747-5-5,此光电耦合器仅适用于安全极限数据之内安全电气绝。通过保护性电路确保各项  
安全标准达标。  
参数  
特性  
I–IV  
< 150 VRMS  
< 300 VRMS  
0110/1.89 1 的安装分类,提供额定电源电压  
I–IV  
55/100/21  
2
气候分类  
污染等(DIN VDE 0110/1.89)  
相比漏电起痕指数  
175  
符号  
参数  
数值  
单位  
输入至输出测试电压,方AVIORM x 1.6 = VPR,  
型式和样品测试tm = 10 s,局部放< 5 pC  
1360  
Vpeak  
VPR  
输入至输出测试电压,方BVIORM x 1.875 = VPR  
100% 生产测试tm = 1 s,局部放< 5 pC  
1594  
Vpeak  
VIORM  
VIOTM  
850  
6000  
7  
Vpeak  
Vpeak  
mm  
mm  
mm  
°C  
最大工作绝缘电压  
最高允许过电压  
外部爬电距离  
7  
外部绝缘间隙  
DTI  
TS  
0.4  
175  
绝缘穿透距绝缘厚度)  
(1)  
输入电(1)  
IS,INPUT  
PS,OUTPUT  
RIO  
400  
mA  
输出功(1)  
700  
> 109  
mW  
TSVIO = 500 V(1) 时的绝缘阻抗  
注意:  
1. 安全极限发生故障时允许的最大值。  
©2014 飞兆半导体公司  
FOD410FOD4108FOD4116FOD4118 1.6.0  
www.fairchildsemi.com  
2
绝对最大额定值  
应力超过绝对最大额定值,可能会损坏设备。在超出推荐的工作条件的情况下,该器件可能无法正常运行或操作,所以  
不建议让器件在这些条件下长期工作。此外,过度暴露在高于推荐的工作条件下,会影响器件的可靠性。绝对最大额定  
值仅是额定应力值。除非另有说明TA = 25°C  
器件  
所有  
所有  
所有  
所有  
所有  
所有  
符号  
TSTG  
TOPR  
TJ  
参数  
数值  
单位  
°C  
-55 to +150  
存储温度  
°C  
工作温度  
-55 +100  
-55 +125  
10 260  
500  
°C  
结温的关系  
引脚焊接温度  
TSOL  
°C  
mW  
mW/°C  
器件总功25°C 时)  
25°C 时降额  
PD(TOTAL)  
6.6  
发射极  
IF  
30  
6
A
V
连续正向电流  
所有  
所有  
所有  
所有  
VR  
反向电压的关系  
50  
mW  
mW/°C  
总功25°C 环境温度时)  
25°C 时降额  
PD(EMITTER)  
0.71  
检测器  
FOD410, FOD4116  
600  
800  
3
VDRM  
V
断态输出端电压  
FOD4108, FOD4118  
ITSM  
ITM  
A
mA  
峰值非重复浪涌电单循60 Hz 正弦波)  
峰值通态电流  
所有  
所有  
所有  
所有  
300  
450  
5.9  
mW  
总功25°C 环境温度时)  
25°C 时降额  
PD (检测器)  
mW/°C  
©2014 飞兆半导体公司  
www.fairchildsemi.com  
FOD410FOD4108FOD4116FOD4118 1.6.0  
3
电气特性  
除非另有说明TA = 25°C  
独立元器件特性  
符号  
参数  
测试条件  
器件  
最小值 典型值 最大值  
单位  
发射极  
VF  
IF = 20 mA  
VR = 6 V  
1.25  
1.50  
10  
V
输入正向电压  
反向漏电流  
所有  
所有  
IR  
0.0001  
μA  
检测器  
FOD410,  
FOD4116  
VD = 600 V  
IF = 0,  
T
ID(RMS)  
3
3
100  
100  
μA  
峰值阻断电流,任一方向  
A = 100°C(2)  
FOD4108,  
FOD4118  
V
V
V
D = 800 V  
D = 600 V  
D = 800 V  
FOD410,  
FOD4116  
IR(RMS)  
TA = 100°C  
μA  
反向电流  
FOD4108,  
FOD4118  
F = 0(3) 15)  
所有  
dv/dt  
10,000  
V/μs  
关断电压上升临界值  
I
注意:  
2. 必须dv/dt 额定值范围内施加测试电压。  
3. 这就是静dv/dt。测试电路见15。换dv/dt 只与负载驱动晶闸管有关。  
©2014 飞兆半导体公司  
FOD410FOD4108FOD4116FOD4118 1.6.0  
www.fairchildsemi.com  
4
电气特(续)  
除非另有说明TA = 25°C  
传输特性  
符号  
参数  
测试条件  
器件  
最小值 典型值 最大值 单位  
FOD410,  
FOD4108  
0.65  
0.65  
2.2  
2.0  
1.3  
IFT  
mA  
V
LED 触发电流  
主端电= 5 V(4)  
FOD4116,  
FOD4118  
峰值通态电压,任一  
方向  
VTM  
3
ITM = 300 mA (峰值IF = 额定IFT  
T = 3 V  
所有  
IH  
IL  
V
200  
5
500  
µA  
维持电流,任一方向  
闩锁电流  
所有  
所有  
VT = 2.2 V  
mA  
FOD410,  
FOD4116,  
FOD4118  
VRM = VDM = 424 VAC  
VRM = VDM = 565 VAC  
tON  
60  
52  
µs  
导通时间  
关断时间  
FOD4108  
PF = 1.0,  
IT = 300 mA  
FOD410,  
FOD4116,  
FOD4118  
V
RM = VDM = 424 VAC  
tOFF  
µs  
VRM = VDM = 565 VAC  
TJ = 25°C  
FOD4108  
10,000  
5,000  
V/µs  
VD = 0.67 VDRM  
di/dtcrq 15 A/ms  
,
换流时的电压临界上  
升率  
dv/dtcrq  
di/dtcr  
所有  
TJ = 80°C  
V/µs  
A/µs  
8
通态电流临界上升率  
所有  
耦合输/ 输出电压  
dv(IO)/dt  
IT = 0 A, VRM = VDM = 424 VAC  
10,000  
V/µs  
上升  
所有  
临界值  
注意:  
4. 保证所有器件都能IF 值小于或等于最IFT 时触发荐的工IF 介于最IFT(对FOD410 FOD4108  
2 mA,而对FOD4116 FOD4118 1.3 mA)和绝IF 60 mA)之间。  
过零特性  
符号  
参数  
测试条件  
器件  
最小值 典型值 最大值 单位  
抑制电超过后器件  
IF = IFT  
VINH  
8
25  
V
所有  
无法触发MT1-MT2  
电压)  
I
F = IFT、额VDRM、关断状态  
IDRM2  
20  
200  
µA  
抑制状态下的漏电流  
所有  
绝缘特性  
符号  
参数  
测试条件  
器件  
最小值 典型值 最大值 单位  
VISO  
f = 60 Hz, t = 1 Minute(5)  
5,000  
VACRMS  
稳态隔离电压  
所有  
注意:  
5. 隔离电VISO 是内部器件介质击穿额定电压于该测试12 3 共用45 6 共用5,000 VACRMS  
1 分钟相当6,000 VACRMS 1 秒钟。  
©2014 飞兆半导体公司  
FOD410FOD4108FOD4116FOD4118 1.6.0  
www.fairchildsemi.com  
5
典型应用  
Figure 3 shows a typical circuit for when hot line switch-  
ing is required. In this circuit the “hot” side of the line is  
switched and the load connected to the cold or neutral  
side. The load may be connected to either the neutral or  
hot line.  
R is calculated so that I is equal to the rated I of the  
in F FT  
part, 2 mA for FOD40 and FOD408, 1.3 mA forꢀ  
FOD416 and FOD418. The 39 Ω resistor and 0.01 μFꢀ  
capacitor are for snubbing of the triac and may or mayꢀ  
not be necessary depending upon the particular triacꢀ  
and load use.  
Rin  
360 Ω  
1
2
6
5
HOT  
VCC  
FOD40  
FOD408  
FOD416  
FOD418  
FKPF12N80  
39Ωꢀ  
3
4
240 VAC  
0.01μF  
330 Ω  
LOAD  
NEUTRAL  
* For highly inductive loads (power factor < 0.5), change this value to 360 ohms.  
Figure 3. Hot-Line Switching Application Circuit  
©2014 飞兆半导体公司  
www.fairchildsemi.com  
FOD410FOD4108FOD4116FOD4118 1.6.0  
6
典型性能特征  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 5.0 V  
AK  
Normalized to T = 25°C  
A
-55°C  
25°C  
85°C  
0.6  
0.1  
-60  
-40  
-20  
T – AMBIENT TEMPERATURE (°C)  
A
0
20  
40  
60  
80  
100  
1
10  
100  
I
– FORWARD CURRENT (mA)  
F
Figure 4. Forward Voltage (V )  
F
Figure 5. Normalized LED Trigger Current (I  
vs. Ambient Temperature (T )  
A
)
FT  
vs. Forward Current (I )  
F
100  
10  
1
10000  
1000  
t
= t(I /I  
FT 25°C)  
D
D
F
= 400 V  
τ
V
F = 60 Hz  
P-P  
Duty Factor  
0.005  
0.01  
t
τ
0.02  
DF =  
t
0.05  
0.1  
0.2  
0.5  
100  
10  
10-6  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
1
10  
/I – NORMALIZED I (mA)  
100  
t – LED PULSE DURATION (s)  
I
FT  
F
F
Figure 6. Peak LED Current  
vs. Duty Factor, Tau  
Figure 7. Trigger Delay Time  
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
1000  
100  
10  
V
= 250 V  
P-P  
L
F = 60 Hz  
Normalized to DC  
T
= 100°C  
A
T
= 25°C  
A
1
0
200  
400  
600  
800  
1000  
0
1
2
3
4
P
W
– PULSE WIDTH (μs)  
V
TM  
– ON-STATE VOLTAGE (V)  
Figure 8. Pulse Trigger Current  
Figure 9. On-State Voltage (V  
)
)
TM  
vs. On-State Current (I  
TM  
©2014 飞兆半导体公司  
FOD410FOD4108FOD4116FOD4118 1.6.0  
www.fairchildsemi.com  
7
典型性能特性 (接上页)  
10  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
Normalized to T = 25°C  
A
V
= 800 V, I (μA)  
BD  
D
Normalized to T = 25°C  
A
1
0.1  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
T
A
– AMBIENT TEMPERATURE (°C)  
T
A
– AMBIENT TEMPERATURE (°C)  
Figure 10. Normalized Holding Current (I )  
H
Figure 11. Normalized Off-State Current (I  
)
DRM  
vs. Ambient Temperature (T )  
A
vs. Ambient Temperature (T )  
A
1.2  
1.1  
1.0  
0.9  
0.8  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
I
V
= Rated I  
FT  
= 600 V  
F
I
= Rated I  
FT  
Normalized to T = 25°C  
F
DRM  
Normalized to T = 25°C  
A
A
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
-60  
-40  
-20  
T – AMBIENT TEMPERATURE (°C)  
A
0
20  
40  
60  
80  
100  
T
– AMBIENT TEMPERATURE (°C)  
A
Figure 12. Normalized Inhibit Voltage (V  
vs. Ambient Temperature (T )  
)
Figure 13. Normalized Leakage in Inhibit State (I  
vs. Ambient Temperature (T )  
A
)
INH  
DRM2  
A
350  
300  
250  
200  
150  
100  
50  
I
TP  
= f(T )  
A
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
T
A
– AMBIENT TEMPERATURE (°C)  
Figure 14. Current Reduction  
©2014 飞兆半导体公司  
FOD410FOD4108FOD4116FOD4118 1.6.0  
www.fairchildsemi.com  
8
ZL  
VCC 300ꢀȍ  
5V  
1
2
6
4
R1  
R2  
ꢀ)2'ꢁꢂ  
)2'ꢁꢂꢃ  
)2'ꢁꢄꢅ  
)2'ꢁꢄꢃ  
180ꢀȍ  
C1  
115Vac  
7400  
NOTE: Circuit supplies 25 mA drive to gate of triac  
at Vin = 25 V and T < 70°C  
A
TRIAC  
CꢀꢁX)ꢂ  
0.1  
IGTꢀꢁP$ꢂ  
R2ꢀꢁȍꢂ  
2400  
1200  
800  
15  
30  
50  
0.2  
0.3  
1000ꢀȍ  
27ꢀȍ  
2 W  
VDRM/VRRM SELECT  
10 W  
WIREWOUND  
6
4
X100 PROBE  
1
DUT  
DIFFERENTIAL  
PREAMP  
20kȍ 2W  
0.047ꢀQ)  
1000 V  
0.33ꢀX) 1000 V  
2
X100 PROBE  
470 pF  
dV  
dt  
VERNIER  
1 0ȍꢀ  
2W EACH  
MOUNT DUT ON  
TEMPERATURE CONTROLLED  
Cu PLATE  
0.001ꢀQ)  
0.005ꢀQ)  
0.01ꢀQ)  
100ꢀȍ  
2 W  
1.2 0ȍ  
2 W  
82ꢀꢀȍ  
2 W  
POWER  
TEST  
0.047ꢀQ)  
0.1ꢀQ)  
1N914  
RFP4N100  
20 V  
0.47ꢀQ)  
56ꢀȍ  
0-1000 V  
10 mA  
2 W  
1N967A  
18 V  
f = 10 Hz  
1/4 W  
1ꢀNȍ  
PW = 100 μs  
50 PULSE  
GENERATOR  
ALL COMPONENTS ARE NON-INDUCTIVE UNLESS SHOWN  
dY  
Figure ꢃꢄ. Circuit for StaticMeasurement of Power Thyristors  
dt  
©2014 飞兆半导体公司  
FOD410FOD4108FOD4116FOD4118 1.6.0  
www.fairchildsemi.com  
9
240 VAC  
R1  
D1  
1
2
6
5
VCC  
FOD40  
FOD408  
FOD416  
FOD418  
Rin  
SCR  
SCR  
360 Ω  
3
4
R2  
D2  
LOAD  
Figure 1. Inverse-Parallel SCR Driver Circuit  
Suggested method of firing two, back-to-back SCR’s with a Fairchild triac driver. Diodes can be 1N4001; resistors,  
R1 and R2, are optional 330 Ω.  
Note: This optoisolator should not be used to drive a load directly. It is intended to be a discrete triac driver device  
only.  
Reflow Profile  
245°C, 10 to 30 seconds  
300  
260°C peak  
250  
200  
150  
100  
50  
Time above 183°C, < 160 seconds  
Ramp up = 2 to 10°C/second  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
Time (Minute)  
• Peak reflow temperature: 26°C (package surface temperature)  
• Time of temperature higher than 18°C for 160 seconds or less  
• One time soldering reflow is recommendeG  
Figure 1. Reflow Profile  
©2014 飞兆半导体公司  
FOD410FOD4108FOD4116FOD4118 1.6.0  
www.fairchildsemi.com  
10  
订购信息  
部件编号  
封装  
封装方法  
管状包50 单位)  
管状包50 单位)  
卷带包1000 单位)  
管状包50 单位)  
管状包50 单位)  
卷带包1000 单位)  
管状包50 单位)  
FOD410  
FOD410S  
DIP 6 引脚  
SMT 6 引脚弯曲)  
SMT 6 引脚弯曲)  
FOD410SD  
FOD410V  
DIP 6 引脚DIN EN/IEC 60747-5-5 选项  
FOD410SV  
FOD410SDV  
FOD410TV  
SMT 6 弯曲引线DIN EN/IEC 60747-5-5 选项  
SMT 6 弯曲引线DIN EN/IEC 60747-5-5 选项  
DIP 6 引脚0.4" 引脚间距DIN EN/IEC 60747-5-5 选项  
注意:  
6. 该表中所列的可订购产品部件编号系统同样适用FOD4108FOD4116 FOD4118 产品系列。  
标识信息  
1
2
)2'ꢁꢄꢂꢀꢀ  
6
V
;ꢀꢀꢀꢀ<<ꢀꢀꢀ'ꢀ  
5
3
4
18. 顶标  
1. 顶标定义  
1
2
3
4
5
6
飞兆徽标  
器件编号  
VDE DIN EN/IEC60747-5-5 只有组件订购附带此选项时出现)  
一位数年份代码,“6”  
工作周数,范围“01” “53”  
装配封装码  
©2014 飞兆半导体公司  
www.fairchildsemi.com  
FOD410FOD4108FOD4116FOD4118 1.6.0  
11  
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